Patent
US 8,431,960DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS Inventors:
Robert Beach, Guang Yuan Zhao
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,431,960Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/7 56,063 Docket No.: EO 101.0003/P 003 Reply to Office Action of AMENDMENTS TO THE CLAIMS 1. An enhancement mode gallium nitride (GaN) transistor comprising: a substrate; a set of transition layers above the substrate; [[and]] a doped layer of material comprising a first concentration of dopant atoms; a set of growth interrupt layers above the set of transition layers, wherein said growth interrupt layers contain dopant atoms in a modulated and decreasing concentration, wherein the dopant atoms are selected from the gro up consisting o f magnes i um, i ron, nickel, manganese, calcium, vanadium, and other transition metals; and a buffer layer of material comprising gallium nitride formed above the set of growth interrupt layers.
The transistor of claim 1, wherein the dopant atoms comprise magnesium (Mg).
2.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a material doped with magnesium (Mg) over the transition layers; starting a flow including a supply of gallium (Ga)- containing material and a supply of a nitrogen source to grow a GaN material over the Mg doped material; stopping the supply of Ga-containing material while maintaining the supply of nitrogen source to form an Mg doped nitride material; 2 Application No. 12/7 56,063 Docket No.: B0101.0003/P 003 Reply to Office Action of after forming the Mg doped nitride material, resuming the supply of Ga- containing material to form a GaN material over the Mg doped nitride material; and forming a buffer layer over the last-formed GaN material.
The method of claim 3, further comprising repeating the steps of growing the GaN material, stopping the supply of Ga- containing materials while maintaining a supply of nitrogen source, and resuming the supply of Ga-containing material prior to forming the buffer layer over the last-formed GaN material.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a doped material comprising a first concentration of dopant atoms over the transition layers; providing a flow of nitrogen and Group III element containing gases; stopping flow of Group III element containing gases while maintaining a supply of nitrogen; reducing temperature after stopping flow of the Group III element containing gases; restarting flow of Group III element containing gases after reducing temperature; elevating temperature after restarting the flow of Group III element containing gases; and forming a buffer layer.
The method of claim 5, wherein the Group III element containing gas is a mixture of one or more of Trimethyl Gallium, Trimethyl Aluminum, Triethyl Gallium, Triethyl Aluminum, and Triethyl Indium.
The method of claim 5, wherein the dopant atoms are selected from the group consisting of magnesium, iron, nickel, manganese, calcium, vanadium, and other transition metals.
The method of claim 5, wherein the step of providing a flow of nitrogen and Group III element containing gases comprises: growing a GaN material over the doped material; and stopping a supply of gallium (Ga)-containing materials while maintaining a supply of an activated nitrogen source to form a doped nitride material.
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
gallium nitride
GaN
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,431,960Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/7 56,063 Docket No.: EO 101.0003/P 003 Reply to Office Action of AMENDMENTS TO THE CLAIMS 1. An enhancement mode gallium nitride (GaN) transistor comprising: a substrate; a set of transition layers above the substrate; [[and]] a doped layer of material comprising a first concentration of dopant atoms; a set of growth interrupt layers above the set of transition layers, wherein said growth interrupt layers contain dopant atoms in a modulated and decreasing concentration, wherein the dopant atoms are selected from the gro up consisting o f magnes i um, i ron, nickel, manganese, calcium, vanadium, and other transition metals; and a buffer layer of material comprising gallium nitride formed above the set of growth interrupt layers.
The transistor of claim 1, wherein the dopant atoms comprise magnesium (Mg).
2.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a material doped with magnesium (Mg) over the transition layers; starting a flow including a supply of gallium (Ga)- containing material and a supply of a nitrogen source to grow a GaN material over the Mg doped material; stopping the supply of Ga-containing material while maintaining the supply of nitrogen source to form an Mg doped nitride material; 2 Application No. 12/7 56,063 Docket No.: B0101.0003/P 003 Reply to Office Action of after forming the Mg doped nitride material, resuming the supply of Ga- containing material to form a GaN material over the Mg doped nitride material; and forming a buffer layer over the last-formed GaN material.
The method of claim 3, further comprising repeating the steps of growing the GaN material, stopping the supply of Ga- containing materials while maintaining a supply of nitrogen source, and resuming the supply of Ga-containing material prior to forming the buffer layer over the last-formed GaN material.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a doped material comprising a first concentration of dopant atoms over the transition layers; providing a flow of nitrogen and Group III element containing gases; stopping flow of Group III element containing gases while maintaining a supply of nitrogen; reducing temperature after stopping flow of the Group III element containing gases; restarting flow of Group III element containing gases after reducing temperature; elevating temperature after restarting the flow of Group III element containing gases; and forming a buffer layer.
The method of claim 5, wherein the Group III element containing gas is a mixture of one or more of Trimethyl Gallium, Trimethyl Aluminum, Triethyl Gallium, Triethyl Aluminum, and Triethyl Indium.
The method of claim 5, wherein the dopant atoms are selected from the group consisting of magnesium, iron, nickel, manganese, calcium, vanadium, and other transition metals.
The method of claim 5, wherein the step of providing a flow of nitrogen and Group III element containing gases comprises: growing a GaN material over the doped material; and stopping a supply of gallium (Ga)-containing materials while maintaining a supply of an activated nitrogen source to form a doped nitride material.
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
gallium nitride
GaN
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,431,960Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/7 56,063 Docket No.: EO 101.0003/P 003 Reply to Office Action of AMENDMENTS TO THE CLAIMS 1. An enhancement mode gallium nitride (GaN) transistor comprising: a substrate; a set of transition layers above the substrate; [[and]] a doped layer of material comprising a first concentration of dopant atoms; a set of growth interrupt layers above the set of transition layers, wherein said growth interrupt layers contain dopant atoms in a modulated and decreasing concentration, wherein the dopant atoms are selected from the gro up consisting o f magnes i um, i ron, nickel, manganese, calcium, vanadium, and other transition metals; and a buffer layer of material comprising gallium nitride formed above the set of growth interrupt layers.
The transistor of claim 1, wherein the dopant atoms comprise magnesium (Mg).
2.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a material doped with magnesium (Mg) over the transition layers; starting a flow including a supply of gallium (Ga)- containing material and a supply of a nitrogen source to grow a GaN material over the Mg doped material; stopping the supply of Ga-containing material while maintaining the supply of nitrogen source to form an Mg doped nitride material; 2 Application No. 12/7 56,063 Docket No.: B0101.0003/P 003 Reply to Office Action of after forming the Mg doped nitride material, resuming the supply of Ga- containing material to form a GaN material over the Mg doped nitride material; and forming a buffer layer over the last-formed GaN material.
The method of claim 3, further comprising repeating the steps of growing the GaN material, stopping the supply of Ga- containing materials while maintaining a supply of nitrogen source, and resuming the supply of Ga-containing material prior to forming the buffer layer over the last-formed GaN material.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a doped material comprising a first concentration of dopant atoms over the transition layers; providing a flow of nitrogen and Group III element containing gases; stopping flow of Group III element containing gases while maintaining a supply of nitrogen; reducing temperature after stopping flow of the Group III element containing gases; restarting flow of Group III element containing gases after reducing temperature; elevating temperature after restarting the flow of Group III element containing gases; and forming a buffer layer.
The method of claim 5, wherein the Group III element containing gas is a mixture of one or more of Trimethyl Gallium, Trimethyl Aluminum, Triethyl Gallium, Triethyl Aluminum, and Triethyl Indium.
The method of claim 5, wherein the dopant atoms are selected from the group consisting of magnesium, iron, nickel, manganese, calcium, vanadium, and other transition metals.
The method of claim 5, wherein the step of providing a flow of nitrogen and Group III element containing gases comprises: growing a GaN material over the doped material; and stopping a supply of gallium (Ga)-containing materials while maintaining a supply of an activated nitrogen source to form a doped nitride material.
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
gallium nitride
GaN
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,431,960Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 12/7 56,063 Docket No.: EO 101.0003/P 003 Reply to Office Action of AMENDMENTS TO THE CLAIMS 1. An enhancement mode gallium nitride (GaN) transistor comprising: a substrate; a set of transition layers above the substrate; [[and]] a doped layer of material comprising a first concentration of dopant atoms; a set of growth interrupt layers above the set of transition layers, wherein said growth interrupt layers contain dopant atoms in a modulated and decreasing concentration, wherein the dopant atoms are selected from the gro up consisting o f magnes i um, i ron, nickel, manganese, calcium, vanadium, and other transition metals; and a buffer layer of material comprising gallium nitride formed above the set of growth interrupt layers.
The transistor of claim 1, wherein the dopant atoms comprise magnesium (Mg).
2.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a material doped with magnesium (Mg) over the transition layers; starting a flow including a supply of gallium (Ga)- containing material and a supply of a nitrogen source to grow a GaN material over the Mg doped material; stopping the supply of Ga-containing material while maintaining the supply of nitrogen source to form an Mg doped nitride material; 2 Application No. 12/7 56,063 Docket No.: B0101.0003/P 003 Reply to Office Action of after forming the Mg doped nitride material, resuming the supply of Ga- containing material to form a GaN material over the Mg doped nitride material; and forming a buffer layer over the last-formed GaN material.
The method of claim 3, further comprising repeating the steps of growing the GaN material, stopping the supply of Ga- containing materials while maintaining a supply of nitrogen source, and resuming the supply of Ga-containing material prior to forming the buffer layer over the last-formed GaN material.
A method of manufacturing an enhancement mode gallium nitride (GaN) transistor, the method comprising: forming a set of transition layers over a substrate; growing a doped material comprising a first concentration of dopant atoms over the transition layers; providing a flow of nitrogen and Group III element containing gases; stopping flow of Group III element containing gases while maintaining a supply of nitrogen; reducing temperature after stopping flow of the Group III element containing gases; restarting flow of Group III element containing gases after reducing temperature; elevating temperature after restarting the flow of Group III element containing gases; and forming a buffer layer.
The method of claim 5, wherein the Group III element containing gas is a mixture of one or more of Trimethyl Gallium, Trimethyl Aluminum, Triethyl Gallium, Triethyl Aluminum, and Triethyl Indium.
The method of claim 5, wherein the dopant atoms are selected from the group consisting of magnesium, iron, nickel, manganese, calcium, vanadium, and other transition metals.
The method of claim 5, wherein the step of providing a flow of nitrogen and Group III element containing gases comprises: growing a GaN material over the doped material; and stopping a supply of gallium (Ga)-containing materials while maintaining a supply of an activated nitrogen source to form a doped nitride material.
Layer stacks claimed or described, ordered top of device to substrate.
enhancement mode GaN transistor
Materials described outside the worked examples.
gallium nitride
GaN
magnesium
Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of a conventional GaN transistor device. [0011]
Related documents with shared materials, methods, properties, or citations.
iron
Fe
nickel
Ni
manganese
Mn
calcium
Ca
vanadium
V
transition metals (other)
magnesium nitride
MgN₂
Trimethyl Gallium
Ga(CH₃)3
Trimethyl Aluminum
Al(CH₃)3
Triethyl Gallium
Ga(C₂H₅)3
Triethyl Aluminum
Al(C₂H₅)3
Triethyl Indium
In(C₂H₅)3
aluminum gallium nitride
AlGaN
aluminum nitride
AlN
Mg doped GaN
GaN:Mg
indium gallium nitride
InGaN
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.
iron
Fe
nickel
Ni
manganese
Mn
calcium
Ca
vanadium
V
transition metals (other)
magnesium nitride
MgN₂
Trimethyl Gallium
Ga(CH₃)3
Trimethyl Aluminum
Al(CH₃)3
Triethyl Gallium
Ga(C₂H₅)3
Triethyl Aluminum
Al(C₂H₅)3
Triethyl Indium
In(C₂H₅)3
aluminum gallium nitride
AlGaN
aluminum nitride
AlN
Mg doped GaN
GaN:Mg
indium gallium nitride
InGaN
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.
iron
Fe
nickel
Ni
manganese
Mn
calcium
Ca
vanadium
V
transition metals (other)
magnesium nitride
MgN₂
Trimethyl Gallium
Ga(CH₃)3
Trimethyl Aluminum
Al(CH₃)3
Triethyl Gallium
Ga(C₂H₅)3
Triethyl Aluminum
Al(C₂H₅)3
Triethyl Indium
In(C₂H₅)3
aluminum gallium nitride
AlGaN
aluminum nitride
AlN
Mg doped GaN
GaN:Mg
indium gallium nitride
InGaN
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.
iron
Fe
nickel
Ni
manganese
Mn
calcium
Ca
vanadium
V
transition metals (other)
magnesium nitride
MgN₂
Trimethyl Gallium
Ga(CH₃)3
Trimethyl Aluminum
Al(CH₃)3
Triethyl Gallium
Ga(C₂H₅)3
Triethyl Aluminum
Al(C₂H₅)3
Triethyl Indium
In(C₂H₅)3
aluminum gallium nitride
AlGaN
aluminum nitride
AlN
Mg doped GaN
GaN:Mg
indium gallium nitride
InGaN
FIG. 2 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a first embodiment of the present invention. [0012]
FIG. 3 is a graph of Mg concentration in a buffer layer for single and multiple row interrupts in comparison to non-interrupted or standard growth. [0013]
FIG. 4 illustrates a cross-sectional view of an enhancement mode GaN transistor device formed according to a second embodiment of the present invention.