Patent
US 12,243,746 B2METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
Fen Guo, Kang Su, Hongtao Man, Tuo Li
SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD., Jiangsu (CN)·Mar. 4, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,243,746 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for stripping a gallium nitride substrate provided according to embodiments of the present disclosure;
FIGS. 2 and 3 are schematic diagrams of scanning paths of a laser beam on a gallium nitride substrate; and
FIG. 3. In such a scanning manner, a laser needs to be turned off after scanning in each individual track is finished, and is then turned on to perform next …
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for stripping a gallium nitride substrate, comprising: acquiring a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof; scanning and irradiating an interior of the gallium nitride substrate via the gallium nitride epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10⁻¹⁵s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and separating the gallium nitride substrate at the decompo-sition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device, wherein before scanning and irradiating the interior of the gallium nitride substrate via the gallium nitride epi-taxial structure by the laser beam, the method further comprises: grooving the gallium nitride epitaxial structure and the gallium nitride substrate by a laser grooving technique to form grooves, depths of the grooves being equal to the distance between the decomposition layer and the upper surface of the gallium nitride epitaxial structure.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a grid.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: polishing a separated surface of the stripped gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein separating the gallium nitride substrate at the decomposition layer comprises: bonding the upper surface of the gallium nitride epitaxial structure to a carrier; and applying opposing forces to the carrier and the gallium nitride substrate, so that the gallium nitride substrate is separated at the decomposition layer.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a wavelength of the laser beam is between 1000 nm and 1040 nm, pulse energy of the laser beam is between 3 µJ and 5 µJ, a pulse repetition rate of the laser beam is between 1 kHz and 2 kHz, and a scanning speed of the laser beam is between 500 um/s and 1000 um/s.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein before acquiring the gallium nitride substrate with the gallium nitride epitaxial structure directly grown on the upper surface thereof, the method further comprises: growing the gallium nitride epitaxial structure on the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a continuous track.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a plurality of intermittent tracks.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a thickness of the stripped gallium nitride substrate is greater than 150 µm.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a focus of the laser beam is parallel to the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: transferring the semiconductor device onto a flexible substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a manner of a plurality of parallel lines. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN HEMT epitaxial structure on GaN substrate
Materials described outside the worked examples.
first gallium nitride layer
GaN
insertion layer (aluminum nitride)
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stripped GaN substrate minimum reuse thickness | ≥ 150 µm | GaN |
typical GaN substrate thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,243,746 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for stripping a gallium nitride substrate provided according to embodiments of the present disclosure;
FIGS. 2 and 3 are schematic diagrams of scanning paths of a laser beam on a gallium nitride substrate; and
FIG. 3. In such a scanning manner, a laser needs to be turned off after scanning in each individual track is finished, and is then turned on to perform next …
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for stripping a gallium nitride substrate, comprising: acquiring a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof; scanning and irradiating an interior of the gallium nitride substrate via the gallium nitride epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10⁻¹⁵s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and separating the gallium nitride substrate at the decompo-sition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device, wherein before scanning and irradiating the interior of the gallium nitride substrate via the gallium nitride epi-taxial structure by the laser beam, the method further comprises: grooving the gallium nitride epitaxial structure and the gallium nitride substrate by a laser grooving technique to form grooves, depths of the grooves being equal to the distance between the decomposition layer and the upper surface of the gallium nitride epitaxial structure.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a grid.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: polishing a separated surface of the stripped gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein separating the gallium nitride substrate at the decomposition layer comprises: bonding the upper surface of the gallium nitride epitaxial structure to a carrier; and applying opposing forces to the carrier and the gallium nitride substrate, so that the gallium nitride substrate is separated at the decomposition layer.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a wavelength of the laser beam is between 1000 nm and 1040 nm, pulse energy of the laser beam is between 3 µJ and 5 µJ, a pulse repetition rate of the laser beam is between 1 kHz and 2 kHz, and a scanning speed of the laser beam is between 500 um/s and 1000 um/s.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein before acquiring the gallium nitride substrate with the gallium nitride epitaxial structure directly grown on the upper surface thereof, the method further comprises: growing the gallium nitride epitaxial structure on the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a continuous track.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a plurality of intermittent tracks.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a thickness of the stripped gallium nitride substrate is greater than 150 µm.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a focus of the laser beam is parallel to the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: transferring the semiconductor device onto a flexible substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a manner of a plurality of parallel lines. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN HEMT epitaxial structure on GaN substrate
Materials described outside the worked examples.
first gallium nitride layer
GaN
insertion layer (aluminum nitride)
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stripped GaN substrate minimum reuse thickness | ≥ 150 µm | GaN |
typical GaN substrate thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,243,746 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for stripping a gallium nitride substrate provided according to embodiments of the present disclosure;
FIGS. 2 and 3 are schematic diagrams of scanning paths of a laser beam on a gallium nitride substrate; and
FIG. 3. In such a scanning manner, a laser needs to be turned off after scanning in each individual track is finished, and is then turned on to perform next …
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for stripping a gallium nitride substrate, comprising: acquiring a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof; scanning and irradiating an interior of the gallium nitride substrate via the gallium nitride epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10⁻¹⁵s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and separating the gallium nitride substrate at the decompo-sition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device, wherein before scanning and irradiating the interior of the gallium nitride substrate via the gallium nitride epi-taxial structure by the laser beam, the method further comprises: grooving the gallium nitride epitaxial structure and the gallium nitride substrate by a laser grooving technique to form grooves, depths of the grooves being equal to the distance between the decomposition layer and the upper surface of the gallium nitride epitaxial structure.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a grid.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: polishing a separated surface of the stripped gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein separating the gallium nitride substrate at the decomposition layer comprises: bonding the upper surface of the gallium nitride epitaxial structure to a carrier; and applying opposing forces to the carrier and the gallium nitride substrate, so that the gallium nitride substrate is separated at the decomposition layer.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a wavelength of the laser beam is between 1000 nm and 1040 nm, pulse energy of the laser beam is between 3 µJ and 5 µJ, a pulse repetition rate of the laser beam is between 1 kHz and 2 kHz, and a scanning speed of the laser beam is between 500 um/s and 1000 um/s.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein before acquiring the gallium nitride substrate with the gallium nitride epitaxial structure directly grown on the upper surface thereof, the method further comprises: growing the gallium nitride epitaxial structure on the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a continuous track.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a plurality of intermittent tracks.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a thickness of the stripped gallium nitride substrate is greater than 150 µm.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a focus of the laser beam is parallel to the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: transferring the semiconductor device onto a flexible substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a manner of a plurality of parallel lines. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN HEMT epitaxial structure on GaN substrate
Materials described outside the worked examples.
first gallium nitride layer
GaN
insertion layer (aluminum nitride)
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stripped GaN substrate minimum reuse thickness | ≥ 150 µm | GaN |
typical GaN substrate thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,243,746 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for stripping a gallium nitride substrate provided according to embodiments of the present disclosure;
FIGS. 2 and 3 are schematic diagrams of scanning paths of a laser beam on a gallium nitride substrate; and
FIG. 3. In such a scanning manner, a laser needs to be turned off after scanning in each individual track is finished, and is then turned on to perform next …
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for stripping a gallium nitride substrate, comprising: acquiring a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof; scanning and irradiating an interior of the gallium nitride substrate via the gallium nitride epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10⁻¹⁵s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and separating the gallium nitride substrate at the decompo-sition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device, wherein before scanning and irradiating the interior of the gallium nitride substrate via the gallium nitride epi-taxial structure by the laser beam, the method further comprises: grooving the gallium nitride epitaxial structure and the gallium nitride substrate by a laser grooving technique to form grooves, depths of the grooves being equal to the distance between the decomposition layer and the upper surface of the gallium nitride epitaxial structure.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a grid.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: polishing a separated surface of the stripped gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein separating the gallium nitride substrate at the decomposition layer comprises: bonding the upper surface of the gallium nitride epitaxial structure to a carrier; and applying opposing forces to the carrier and the gallium nitride substrate, so that the gallium nitride substrate is separated at the decomposition layer.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a wavelength of the laser beam is between 1000 nm and 1040 nm, pulse energy of the laser beam is between 3 µJ and 5 µJ, a pulse repetition rate of the laser beam is between 1 kHz and 2 kHz, and a scanning speed of the laser beam is between 500 um/s and 1000 um/s.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein before acquiring the gallium nitride substrate with the gallium nitride epitaxial structure directly grown on the upper surface thereof, the method further comprises: growing the gallium nitride epitaxial structure on the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a continuous track.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein under the condition of scanning and irradiating the gallium nitride substrate, the laser beam scans and irradiates the interior of the gallium nitride substrate in a plurality of intermittent tracks.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a thickness of the stripped gallium nitride substrate is greater than 150 µm.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein a focus of the laser beam is parallel to the upper surface of the gallium nitride substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein after obtaining the stripped gallium nitride substrate and the semiconductor device, the method further comprises: transferring the semiconductor device onto a flexible substrate.
The method for stripping the gallium nitride substrate as claimed in claim 1, wherein the grooves are distributed in a manner of a plurality of parallel lines. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN HEMT epitaxial structure on GaN substrate
Materials described outside the worked examples.
first gallium nitride layer
GaN
insertion layer (aluminum nitride)
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a schematic structural diagram of a high- electron-mobility transistor.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
stripped GaN substrate minimum reuse thickness | ≥ 150 µm | GaN |
typical GaN substrate thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
barrier layer (aluminum gallium nitride)
AlGaN
| 500 µm |
GaN |
first GaN layer thickness (claimed range) | 1–3 µm | GaN |
second GaN layer thickness (claimed range) | 10–100 nm | GaN |
AlGaN barrier layer thickness (claimed range) | 10–30 nm | AlGaN |
GaN capping layer thickness (claimed range) | 1–5 nm | GaN |
Thickness | 4–6 µm | — |
Thickness | 1000–1040 nm | — |
Thickness | 500–1000 µm | — |
Duration | 30–60 seconds | — |
Cited non-patent literature · 2
barrier layer (aluminum gallium nitride)
AlGaN
| 500 µm |
GaN |
first GaN layer thickness (claimed range) | 1–3 µm | GaN |
second GaN layer thickness (claimed range) | 10–100 nm | GaN |
AlGaN barrier layer thickness (claimed range) | 10–30 nm | AlGaN |
GaN capping layer thickness (claimed range) | 1–5 nm | GaN |
Thickness | 4–6 µm | — |
Thickness | 1000–1040 nm | — |
Thickness | 500–1000 µm | — |
Duration | 30–60 seconds | — |
Cited non-patent literature · 2
barrier layer (aluminum gallium nitride)
AlGaN
| 500 µm |
GaN |
first GaN layer thickness (claimed range) | 1–3 µm | GaN |
second GaN layer thickness (claimed range) | 10–100 nm | GaN |
AlGaN barrier layer thickness (claimed range) | 10–30 nm | AlGaN |
GaN capping layer thickness (claimed range) | 1–5 nm | GaN |
Thickness | 4–6 µm | — |
Thickness | 1000–1040 nm | — |
Thickness | 500–1000 µm | — |
Duration | 30–60 seconds | — |
Cited non-patent literature · 2
barrier layer (aluminum gallium nitride)
AlGaN
| 500 µm |
GaN |
first GaN layer thickness (claimed range) | 1–3 µm | GaN |
second GaN layer thickness (claimed range) | 10–100 nm | GaN |
AlGaN barrier layer thickness (claimed range) | 10–30 nm | AlGaN |
GaN capping layer thickness (claimed range) | 1–5 nm | GaN |
Thickness | 4–6 µm | — |
Thickness | 1000–1040 nm | — |
Thickness | 500–1000 µm | — |
Duration | 30–60 seconds | — |
Cited non-patent literature · 2