FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE

Giuseppe Iannaccone

Patent

Atlas literature

Patent

US 9,620,634

FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE

Giuseppe Iannaccone

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 5 dependent

1
Independent
Claims 1 -5. canceled
2
Independent
canceled
3
Independent
canceled
4
Independent
canceled
5
Independent
canceled
6
IndependentCmaterial compatible with graphenefield-effect transistor with lateral heterostructure channel
A ﬁeld eﬀect transistor comprising a source, a two-dimensional channel, a drain and a gate, arranged in such a way that charge carriers ﬂowing through said two-dimensional channel from said source to said drain deﬁne a longitudinal direction of said two-dimensional channel, wherein said two-dimensional channel comprises a lateral heterostructure consisting in the intercalation of mono- or multi-atomic layer graphene domains, and a domain of a diﬀerent material compatible with graphene, wherein the domain of the diﬀerent material is arranged in such a way that: charge carriers ﬂowing from said source to said drain in said longitudinal direction must ﬂow through said domain of said diﬀerent material; and said domain of said diﬀerent material acts as a barrier controlled by said gate against said charge carriers ﬂowing from said source to said drain in said longitudinal direction.
1. 7
  Dependent← claim 6h-BCNfield-effect transistor with lateral heterostructure channel
  The ﬁeld eﬀect transistor according to claim 6, wherein said domain of said diﬀerent material contains a single domain of hexagonal boron-carbon- nitride. 2
2. 8
  Dependent← claim 6Ch-BCNresonant tunneling field-effect transistor
  The ﬁeld eﬀect transistor according to claim 6, wherein said domain of said diﬀerent material contains two domains of hexagonal boron-carbon- nitride separated by a narrow graphene region that is arranged in such a way that charge carriers ﬂowing from said source to said drain through said domain of said diﬀerent material must ﬂow both through said two domains of hexagonal boron-carbon- nitride and through said narrow graphene region, so that said device can operate as a resonant tunneling ﬁeld-eﬀect transistor.
3. 10
  Dependent← claim 6domain of vacancies of carbon atomsfield-effect transistor with lateral heterostructure channel
  The ﬁeld eﬀect transistor according to claim 6, wherein said domain of said diﬀerent material contains a domain of vacancies of carbon atoms.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

field-effect transistor with lateral heterostructure channel

material compatible with graphenechannel barrier domain

Cchannel graphene domain

resonant tunneling field-effect transistor

h-BCNchannel barrier domain 2

Cchannel narrow graphene region

h-BCNchannel barrier domain 1

Materials

Materials described outside the worked examples.

graphene

Channel Domain

material compatible with graphene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Ion/Ioff ratio > 10000 for FET with BC2N channel	≥ 10000	—
Ion/Ioff ratio < 10 for reference graphene transistor (no barrier)	≤ 10

Why these are connected

Related documents with shared materials, methods, properties, or citations.

FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE | Matter42 Literature