Patent
US 10,734,537HIGH PERFORMANCE, HIGH ELECTRON MOBILITY TRANSISTORS WITH GRAPHENE HOLE EXTRACTION CONTACTS
Zhenqiang Ma
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,734,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
FIG. 2A shows an optical image of finished detectors after graphene is picked up (bottom) and PMMA is removed (top). The rectangle square marks the location of …
FIG. 3C compares the photodetector (this work) with a commercial Thorlab Si photodetector without applying extraction bias.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 1, wherein the first intrinsic semiconductor is a first intrinsic Group I II -V semiconductor and the second semiconductor is a second Group I II -V semiconductor. Previously presented
The photodetector of claim 1, wherein the first intrinsic Group I II -V semiconductor is AlGaN and the second Group I II -V semiconductor is GaN. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 100 nm. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 50 nm. Previously presented
The photodetector of claim 1, wherein the heterostructure further includes a semiconductor cap layer over the first layer and the layer comprising electrically conducting graphene is disposed on the cap layer. Previously presented
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor, a second layer comprising a second semiconductor, and a semiconductor interlayer between the first layer and the second layer; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 6, wherein the first intrinsic Group I II -V semiconductor is AlGaN, the second Group I II -V semiconductor is GaN, and the interlayer is an A l N interlayer. Previously presented
A method of detecting ultraviolet radiation using a vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure in a vertical arrangement, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two-dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas, the method comprising: exposing the layer comprising electrically conducting graphene to incident ultraviolet radiation, wherein at least a portion of the incident ultraviolet radiation passes through the electrically conducting graphene and into the intrinsic semiconductor, generating electron-hole pairs; extracting holes of the electron-hole pairs with the electrically conducting graphene; and extracting electrons of the electron-hole pairs with the two-dimensional electron gas. Currently amended
The method of claim 9, wherein the first intrinsic semiconductor is AlGaN and the second semiconductor is GaN. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertical photodetector (HEMT-based UV photodetector)
vertical photodetector with interlayer (HEMT-based UV photodetector)
Materials described outside the worked examples.
photoresponsive intrinsic semiconductor
second semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
signal-to-noise ratio | ≥ 100000 dimensionless | — |
response time | ≤ 2 ns | — |
dark current |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,734,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
FIG. 2A shows an optical image of finished detectors after graphene is picked up (bottom) and PMMA is removed (top). The rectangle square marks the location of …
FIG. 3C compares the photodetector (this work) with a commercial Thorlab Si photodetector without applying extraction bias.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 1, wherein the first intrinsic semiconductor is a first intrinsic Group I II -V semiconductor and the second semiconductor is a second Group I II -V semiconductor. Previously presented
The photodetector of claim 1, wherein the first intrinsic Group I II -V semiconductor is AlGaN and the second Group I II -V semiconductor is GaN. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 100 nm. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 50 nm. Previously presented
The photodetector of claim 1, wherein the heterostructure further includes a semiconductor cap layer over the first layer and the layer comprising electrically conducting graphene is disposed on the cap layer. Previously presented
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor, a second layer comprising a second semiconductor, and a semiconductor interlayer between the first layer and the second layer; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 6, wherein the first intrinsic Group I II -V semiconductor is AlGaN, the second Group I II -V semiconductor is GaN, and the interlayer is an A l N interlayer. Previously presented
A method of detecting ultraviolet radiation using a vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure in a vertical arrangement, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two-dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas, the method comprising: exposing the layer comprising electrically conducting graphene to incident ultraviolet radiation, wherein at least a portion of the incident ultraviolet radiation passes through the electrically conducting graphene and into the intrinsic semiconductor, generating electron-hole pairs; extracting holes of the electron-hole pairs with the electrically conducting graphene; and extracting electrons of the electron-hole pairs with the two-dimensional electron gas. Currently amended
The method of claim 9, wherein the first intrinsic semiconductor is AlGaN and the second semiconductor is GaN. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertical photodetector (HEMT-based UV photodetector)
vertical photodetector with interlayer (HEMT-based UV photodetector)
Materials described outside the worked examples.
photoresponsive intrinsic semiconductor
second semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
signal-to-noise ratio | ≥ 100000 dimensionless | — |
response time | ≤ 2 ns | — |
dark current |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,734,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
FIG. 2A shows an optical image of finished detectors after graphene is picked up (bottom) and PMMA is removed (top). The rectangle square marks the location of …
FIG. 3C compares the photodetector (this work) with a commercial Thorlab Si photodetector without applying extraction bias.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 1, wherein the first intrinsic semiconductor is a first intrinsic Group I II -V semiconductor and the second semiconductor is a second Group I II -V semiconductor. Previously presented
The photodetector of claim 1, wherein the first intrinsic Group I II -V semiconductor is AlGaN and the second Group I II -V semiconductor is GaN. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 100 nm. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 50 nm. Previously presented
The photodetector of claim 1, wherein the heterostructure further includes a semiconductor cap layer over the first layer and the layer comprising electrically conducting graphene is disposed on the cap layer. Previously presented
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor, a second layer comprising a second semiconductor, and a semiconductor interlayer between the first layer and the second layer; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 6, wherein the first intrinsic Group I II -V semiconductor is AlGaN, the second Group I II -V semiconductor is GaN, and the interlayer is an A l N interlayer. Previously presented
A method of detecting ultraviolet radiation using a vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure in a vertical arrangement, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two-dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas, the method comprising: exposing the layer comprising electrically conducting graphene to incident ultraviolet radiation, wherein at least a portion of the incident ultraviolet radiation passes through the electrically conducting graphene and into the intrinsic semiconductor, generating electron-hole pairs; extracting holes of the electron-hole pairs with the electrically conducting graphene; and extracting electrons of the electron-hole pairs with the two-dimensional electron gas. Currently amended
The method of claim 9, wherein the first intrinsic semiconductor is AlGaN and the second semiconductor is GaN. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertical photodetector (HEMT-based UV photodetector)
vertical photodetector with interlayer (HEMT-based UV photodetector)
Materials described outside the worked examples.
photoresponsive intrinsic semiconductor
second semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
signal-to-noise ratio | ≥ 100000 dimensionless | — |
response time | ≤ 2 ns | — |
dark current |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,734,537Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
FIG. 2A shows an optical image of finished detectors after graphene is picked up (bottom) and PMMA is removed (top). The rectangle square marks the location of …
FIG. 3C compares the photodetector (this work) with a commercial Thorlab Si photodetector without applying extraction bias.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 1, wherein the first intrinsic semiconductor is a first intrinsic Group I II -V semiconductor and the second semiconductor is a second Group I II -V semiconductor. Previously presented
The photodetector of claim 1, wherein the first intrinsic Group I II -V semiconductor is AlGaN and the second Group I II -V semiconductor is GaN. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 100 nm. Previously presented
The photodetector of claim 1, wherein the first layer has a thickness of no greater than 50 nm. Previously presented
The photodetector of claim 1, wherein the heterostructure further includes a semiconductor cap layer over the first layer and the layer comprising electrically conducting graphene is disposed on the cap layer. Previously presented
A vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor, a second layer comprising a second semiconductor, and a semiconductor interlayer between the first layer and the second layer; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two- dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas. Previously presented
The photodetector of claim 6, wherein the first intrinsic Group I II -V semiconductor is AlGaN, the second Group I II -V semiconductor is GaN, and the interlayer is an A l N interlayer. Previously presented
A method of detecting ultraviolet radiation using a vertical photodetector comprising: a heterostructure comprising a first layer comprising a photoresponsive intrinsic semiconductor and a second layer comprising a second semiconductor; a photogenerated electron extraction contact comprising a polarization charge-induced two-dimensional electron gas formed at an interface between the first layer and the second layer of the heterostructure; a photogenerated hole extraction contact comprising a layer comprising electrically conducting graphene disposed over the first layer of the heterostructure in a vertical arrangement, such that the first layer of the heterostructure is disposed between the layer comprising the graphene and the two-dimensional electron gas; an anode in contact with the graphene; and a cathode in contact with the two-dimensional electron gas, the method comprising: exposing the layer comprising electrically conducting graphene to incident ultraviolet radiation, wherein at least a portion of the incident ultraviolet radiation passes through the electrically conducting graphene and into the intrinsic semiconductor, generating electron-hole pairs; extracting holes of the electron-hole pairs with the electrically conducting graphene; and extracting electrons of the electron-hole pairs with the two-dimensional electron gas. Currently amended
The method of claim 9, wherein the first intrinsic semiconductor is AlGaN and the second semiconductor is GaN. Original
Layer stacks claimed or described, ordered top of device to substrate.
vertical photodetector (HEMT-based UV photodetector)
vertical photodetector with interlayer (HEMT-based UV photodetector)
Materials described outside the worked examples.
photoresponsive intrinsic semiconductor
second semiconductor
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an SEM of solar-blind AlGaN/GaN HEMTs UV detectors with graphene as transparent electrodes. The intercept is the optical image of the array of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
signal-to-noise ratio | ≥ 100000 dimensionless | — |
response time | ≤ 2 ns | — |
dark current |
Related documents with shared materials, methods, properties, or citations.
HEMT UV photodetector with AlN interlayer (described embodiment)
electrically conducting graphene
AlGaN
GaN
semiconductor interlayer
semiconductor cap layer
AlN
intrinsic AlxGa₁-xN
AlxGa₁-xN
silicon doped AlGaN cap layer
| ≤ 1e-12 A |
| — |
UV-to-Vis ratio (visible-blind performance) | ≥ 10000 dimensionless | — |
bandgap range for UVA-UVC photodetection | 3.1–6.2 eV | photoresponsive intrinsic semiconductor |
graphene transparency at operating wavelength(s) | ≥ 99 % | electrically conducting graphene |
Voltage | 0.7–1 V | — |
Thickness | 680–1090 nm | — |
Thickness | 420–680 nm | — |
Thickness | 300–1088 nm | — |
Thickness | 800–1300 nm | — |
Thickness | ≤ 420 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE
HEMT UV photodetector with AlN interlayer (described embodiment)
electrically conducting graphene
AlGaN
GaN
semiconductor interlayer
semiconductor cap layer
AlN
intrinsic AlxGa₁-xN
AlxGa₁-xN
silicon doped AlGaN cap layer
| ≤ 1e-12 A |
| — |
UV-to-Vis ratio (visible-blind performance) | ≥ 10000 dimensionless | — |
bandgap range for UVA-UVC photodetection | 3.1–6.2 eV | photoresponsive intrinsic semiconductor |
graphene transparency at operating wavelength(s) | ≥ 99 % | electrically conducting graphene |
Voltage | 0.7–1 V | — |
Thickness | 680–1090 nm | — |
Thickness | 420–680 nm | — |
Thickness | 300–1088 nm | — |
Thickness | 800–1300 nm | — |
Thickness | ≤ 420 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE
HEMT UV photodetector with AlN interlayer (described embodiment)
electrically conducting graphene
AlGaN
GaN
semiconductor interlayer
semiconductor cap layer
AlN
intrinsic AlxGa₁-xN
AlxGa₁-xN
silicon doped AlGaN cap layer
| ≤ 1e-12 A |
| — |
UV-to-Vis ratio (visible-blind performance) | ≥ 10000 dimensionless | — |
bandgap range for UVA-UVC photodetection | 3.1–6.2 eV | photoresponsive intrinsic semiconductor |
graphene transparency at operating wavelength(s) | ≥ 99 % | electrically conducting graphene |
Voltage | 0.7–1 V | — |
Thickness | 680–1090 nm | — |
Thickness | 420–680 nm | — |
Thickness | 300–1088 nm | — |
Thickness | 800–1300 nm | — |
Thickness | ≤ 420 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE
HEMT UV photodetector with AlN interlayer (described embodiment)
electrically conducting graphene
AlGaN
GaN
semiconductor interlayer
semiconductor cap layer
AlN
intrinsic AlxGa₁-xN
AlxGa₁-xN
silicon doped AlGaN cap layer
| ≤ 1e-12 A |
| — |
UV-to-Vis ratio (visible-blind performance) | ≥ 10000 dimensionless | — |
bandgap range for UVA-UVC photodetection | 3.1–6.2 eV | photoresponsive intrinsic semiconductor |
graphene transparency at operating wavelength(s) | ≥ 99 % | electrically conducting graphene |
Voltage | 0.7–1 V | — |
Thickness | 680–1090 nm | — |
Thickness | 420–680 nm | — |
Thickness | 300–1088 nm | — |
Thickness | 800–1300 nm | — |
Thickness | ≤ 420 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE