Patent
US 9,853,104OF THE INVENTION
Jeffrey W. Baldwin
The Government of the United States of America·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,853,104Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a Si O 2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; tuning the bandgap controlling the majority carrier type via surface adsorbates; attaching by physisorption the surface adsorbates to the hydrogenated graphene; converting the majority carrier type from electrons to holes using the surface adsorbates; converting the majority carrier type from n-type to p-type; removing the surface adsorbates; preserving the hydrogenated graphene band structure; and converting the majority carrier type from p-type to n-type. Currently amended
Claims 2-3 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature wherein the bandgap is tunable with an electric field effect Applicant: The Government of the United States of America Inventors: Baldwin e t al. and wherein the hydrogenated graphene has a majority carrier type and a bandgap created from the hydrogenation of the graphene and wherein an electric field applied to the hydrogenated graphene tunes the bandgap; wherein the majority carrier type is controlled via surface adsorbates; wherein the bandgap is higher for higher hydrogen to carbon H/C ratios; and wherein the bandgap has a maximum value at the charge neutrality point (CNP). Currently amended
Claims 5-7 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature further including surface adsorbates physisorbed to the hydrogenated graphene wherein the surface adsorbates are water and results in a p-type material wherein the hydrogenated graphene is formed by the process of preparing exfoliated graphene flakes or a chemical vapor deposition (CVD) grown graphene film on a SiO 2/Si substrate, depositing contact electrodes on the exfoliated graphene flakes or the CVD grown graphene films, exposing the exfoliated graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma, hydrogenating the exfoliated graphene flakes or the CVD grown graphene films, creating a bandgap from the step of hydrogenating the graphene, applying an electric field to the hydrogenated graphene, and tuning the bandgap wherein the contact electrodes are Cr/Au contact electrodes and the hydrogenating is performed with 15-30 W, 1.5 Torr H 2, 100 sccm H 2, 32 C, for 15-30 seconds. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Exfoliated graphene flakes and CVD grown graphene films were prepared on a SiO₂ (275 nm)/Si (n-type arsenic doped) substrate, followed by deposition of Cr (10 nm)/Au (50 nm) contact electrodes. Hydrogenation was performed in a PECVD reactor at 15-30 W, 1.5 Torr H2, 100 sccm H2, 32°C, for 15-30 seconds. Raman spectroscopy (514 nm laser, Renishaw MicroRaman Spectrometer) was used to determine D/G ratios as a measure of relative defect density and hydrogen coverage.
Layer stacks claimed or described, ordered top of device to substrate.
hydrogenated graphene field-effect transistor
graphene FET with Cr/Au contacts on SiO₂/Si
Materials described outside the worked examples.
water (surface adsorbate)
H₂O
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman G-mode position | 1588 cm⁻¹ | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,853,104Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a Si O 2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; tuning the bandgap controlling the majority carrier type via surface adsorbates; attaching by physisorption the surface adsorbates to the hydrogenated graphene; converting the majority carrier type from electrons to holes using the surface adsorbates; converting the majority carrier type from n-type to p-type; removing the surface adsorbates; preserving the hydrogenated graphene band structure; and converting the majority carrier type from p-type to n-type. Currently amended
Claims 2-3 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature wherein the bandgap is tunable with an electric field effect Applicant: The Government of the United States of America Inventors: Baldwin e t al. and wherein the hydrogenated graphene has a majority carrier type and a bandgap created from the hydrogenation of the graphene and wherein an electric field applied to the hydrogenated graphene tunes the bandgap; wherein the majority carrier type is controlled via surface adsorbates; wherein the bandgap is higher for higher hydrogen to carbon H/C ratios; and wherein the bandgap has a maximum value at the charge neutrality point (CNP). Currently amended
Claims 5-7 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature further including surface adsorbates physisorbed to the hydrogenated graphene wherein the surface adsorbates are water and results in a p-type material wherein the hydrogenated graphene is formed by the process of preparing exfoliated graphene flakes or a chemical vapor deposition (CVD) grown graphene film on a SiO 2/Si substrate, depositing contact electrodes on the exfoliated graphene flakes or the CVD grown graphene films, exposing the exfoliated graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma, hydrogenating the exfoliated graphene flakes or the CVD grown graphene films, creating a bandgap from the step of hydrogenating the graphene, applying an electric field to the hydrogenated graphene, and tuning the bandgap wherein the contact electrodes are Cr/Au contact electrodes and the hydrogenating is performed with 15-30 W, 1.5 Torr H 2, 100 sccm H 2, 32 C, for 15-30 seconds. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Exfoliated graphene flakes and CVD grown graphene films were prepared on a SiO₂ (275 nm)/Si (n-type arsenic doped) substrate, followed by deposition of Cr (10 nm)/Au (50 nm) contact electrodes. Hydrogenation was performed in a PECVD reactor at 15-30 W, 1.5 Torr H2, 100 sccm H2, 32°C, for 15-30 seconds. Raman spectroscopy (514 nm laser, Renishaw MicroRaman Spectrometer) was used to determine D/G ratios as a measure of relative defect density and hydrogen coverage.
Layer stacks claimed or described, ordered top of device to substrate.
hydrogenated graphene field-effect transistor
graphene FET with Cr/Au contacts on SiO₂/Si
Materials described outside the worked examples.
water (surface adsorbate)
H₂O
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman G-mode position | 1588 cm⁻¹ | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,853,104Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a Si O 2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; tuning the bandgap controlling the majority carrier type via surface adsorbates; attaching by physisorption the surface adsorbates to the hydrogenated graphene; converting the majority carrier type from electrons to holes using the surface adsorbates; converting the majority carrier type from n-type to p-type; removing the surface adsorbates; preserving the hydrogenated graphene band structure; and converting the majority carrier type from p-type to n-type. Currently amended
Claims 2-3 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature wherein the bandgap is tunable with an electric field effect Applicant: The Government of the United States of America Inventors: Baldwin e t al. and wherein the hydrogenated graphene has a majority carrier type and a bandgap created from the hydrogenation of the graphene and wherein an electric field applied to the hydrogenated graphene tunes the bandgap; wherein the majority carrier type is controlled via surface adsorbates; wherein the bandgap is higher for higher hydrogen to carbon H/C ratios; and wherein the bandgap has a maximum value at the charge neutrality point (CNP). Currently amended
Claims 5-7 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature further including surface adsorbates physisorbed to the hydrogenated graphene wherein the surface adsorbates are water and results in a p-type material wherein the hydrogenated graphene is formed by the process of preparing exfoliated graphene flakes or a chemical vapor deposition (CVD) grown graphene film on a SiO 2/Si substrate, depositing contact electrodes on the exfoliated graphene flakes or the CVD grown graphene films, exposing the exfoliated graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma, hydrogenating the exfoliated graphene flakes or the CVD grown graphene films, creating a bandgap from the step of hydrogenating the graphene, applying an electric field to the hydrogenated graphene, and tuning the bandgap wherein the contact electrodes are Cr/Au contact electrodes and the hydrogenating is performed with 15-30 W, 1.5 Torr H 2, 100 sccm H 2, 32 C, for 15-30 seconds. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Exfoliated graphene flakes and CVD grown graphene films were prepared on a SiO₂ (275 nm)/Si (n-type arsenic doped) substrate, followed by deposition of Cr (10 nm)/Au (50 nm) contact electrodes. Hydrogenation was performed in a PECVD reactor at 15-30 W, 1.5 Torr H2, 100 sccm H2, 32°C, for 15-30 seconds. Raman spectroscopy (514 nm laser, Renishaw MicroRaman Spectrometer) was used to determine D/G ratios as a measure of relative defect density and hydrogen coverage.
Layer stacks claimed or described, ordered top of device to substrate.
hydrogenated graphene field-effect transistor
graphene FET with Cr/Au contacts on SiO₂/Si
Materials described outside the worked examples.
water (surface adsorbate)
H₂O
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman G-mode position | 1588 cm⁻¹ | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,853,104Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a Si O 2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; tuning the bandgap controlling the majority carrier type via surface adsorbates; attaching by physisorption the surface adsorbates to the hydrogenated graphene; converting the majority carrier type from electrons to holes using the surface adsorbates; converting the majority carrier type from n-type to p-type; removing the surface adsorbates; preserving the hydrogenated graphene band structure; and converting the majority carrier type from p-type to n-type. Currently amended
Claims 2-3 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature wherein the bandgap is tunable with an electric field effect Applicant: The Government of the United States of America Inventors: Baldwin e t al. and wherein the hydrogenated graphene has a majority carrier type and a bandgap created from the hydrogenation of the graphene and wherein an electric field applied to the hydrogenated graphene tunes the bandgap; wherein the majority carrier type is controlled via surface adsorbates; wherein the bandgap is higher for higher hydrogen to carbon H/C ratios; and wherein the bandgap has a maximum value at the charge neutrality point (CNP). Currently amended
Claims 5-7 Canceled
Canceled
A graphene compound comprising hydrogenated graphene with a bandgap and exhibiting n-type nature further including surface adsorbates physisorbed to the hydrogenated graphene wherein the surface adsorbates are water and results in a p-type material wherein the hydrogenated graphene is formed by the process of preparing exfoliated graphene flakes or a chemical vapor deposition (CVD) grown graphene film on a SiO 2/Si substrate, depositing contact electrodes on the exfoliated graphene flakes or the CVD grown graphene films, exposing the exfoliated graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma, hydrogenating the exfoliated graphene flakes or the CVD grown graphene films, creating a bandgap from the step of hydrogenating the graphene, applying an electric field to the hydrogenated graphene, and tuning the bandgap wherein the contact electrodes are Cr/Au contact electrodes and the hydrogenating is performed with 15-30 W, 1.5 Torr H 2, 100 sccm H 2, 32 C, for 15-30 seconds. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Exfoliated graphene flakes and CVD grown graphene films were prepared on a SiO₂ (275 nm)/Si (n-type arsenic doped) substrate, followed by deposition of Cr (10 nm)/Au (50 nm) contact electrodes. Hydrogenation was performed in a PECVD reactor at 15-30 W, 1.5 Torr H2, 100 sccm H2, 32°C, for 15-30 seconds. Raman spectroscopy (514 nm laser, Renishaw MicroRaman Spectrometer) was used to determine D/G ratios as a measure of relative defect density and hydrogen coverage.
Layer stacks claimed or described, ordered top of device to substrate.
hydrogenated graphene field-effect transistor
graphene FET with Cr/Au contacts on SiO₂/Si
Materials described outside the worked examples.
water (surface adsorbate)
H₂O
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman G-mode position | 1588 cm⁻¹ | graphene |
Related documents with shared materials, methods, properties, or citations.
| 1345 cm⁻¹ |
hydrogenated graphene |
Theoretical maximum bandgap of hydrogenated graphene | 5.4 eV | hydrogenated graphene |
Temperature | 50–375 K | — |
Temperature | 220–375 K | — |
— | 0.15–0.2 eV | — |
— | 15–30 W | — |
Duration | 15–30 seconds | — |
Duration | ≥ 24 hours | — |
Thickness | ≥ 1 nm | — |
HIGH PERFORMANCE, HIGH ELECTRON MOBILITY TRANSISTORS WITH GRAPHENE HOLE EXTRACTION CONTACTS
| 1345 cm⁻¹ |
hydrogenated graphene |
Theoretical maximum bandgap of hydrogenated graphene | 5.4 eV | hydrogenated graphene |
Temperature | 50–375 K | — |
Temperature | 220–375 K | — |
— | 0.15–0.2 eV | — |
— | 15–30 W | — |
Duration | 15–30 seconds | — |
Duration | ≥ 24 hours | — |
Thickness | ≥ 1 nm | — |
HIGH PERFORMANCE, HIGH ELECTRON MOBILITY TRANSISTORS WITH GRAPHENE HOLE EXTRACTION CONTACTS
| 1345 cm⁻¹ |
hydrogenated graphene |
Theoretical maximum bandgap of hydrogenated graphene | 5.4 eV | hydrogenated graphene |
Temperature | 50–375 K | — |
Temperature | 220–375 K | — |
— | 0.15–0.2 eV | — |
— | 15–30 W | — |
Duration | 15–30 seconds | — |
Duration | ≥ 24 hours | — |
Thickness | ≥ 1 nm | — |
HIGH PERFORMANCE, HIGH ELECTRON MOBILITY TRANSISTORS WITH GRAPHENE HOLE EXTRACTION CONTACTS
| 1345 cm⁻¹ |
hydrogenated graphene |
Theoretical maximum bandgap of hydrogenated graphene | 5.4 eV | hydrogenated graphene |
Temperature | 50–375 K | — |
Temperature | 220–375 K | — |
— | 0.15–0.2 eV | — |
— | 15–30 W | — |
Duration | 15–30 seconds | — |
Duration | ≥ 24 hours | — |
Thickness | ≥ 1 nm | — |
HIGH PERFORMANCE, HIGH ELECTRON MOBILITY TRANSISTORS WITH GRAPHENE HOLE EXTRACTION CONTACTS