Patent
US 7,923,842GaAs Integrated Circuit Device and Method of Attaching Same
Hong Shen
US
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Patent
Atlas literature
Patent
US 7,923,842Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs integrated circuit device, comprising: 2 a GaAs substrate having a contact side; 3 a copper contact layer coupled to the contact side of the GaAs substrate -4he 4 c 5 uf 6c 7 printed-circuit-board; 8 a barrier layer comprising NiV deposited between the copper contact layer and 9 the GaAs substrate; and 10 a via having a wall and extending through the GaAs substrate to at least the 11 barrier layer, wherein the copper contact layer is coupled to the wall of the via abse nt 12 intening4aye s.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 5. The GaAs integrated circuit device according 2 to claim 4, wherein the seed layer comprises copper.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 1 1 3. -21. 22. A GaAs power amplifier assembly, 2 comprising: 3 a GaAs substrate having a contact side; 4 a NiV barrier layer disposed on the contact side; 5 a via having a wall and extending through the GaAs pewer-amplifier substrate to 6 at least the NiV barrier layer; 7 a copper or gold seed layer disposed on the barrier layer; and 8 a copper contact layer disposed on the seed layer, the copper contact layer 9 coupled to the wall of the via a 10 c ir cu it beard sueh that w 11 pr 12 de.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs integrated circuit device
GaAs power amplifier assembly
Materials described outside the worked examples.
GaAs substrate
GaAs
copper contact layer
Cu
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,923,842Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs integrated circuit device, comprising: 2 a GaAs substrate having a contact side; 3 a copper contact layer coupled to the contact side of the GaAs substrate -4he 4 c 5 uf 6c 7 printed-circuit-board; 8 a barrier layer comprising NiV deposited between the copper contact layer and 9 the GaAs substrate; and 10 a via having a wall and extending through the GaAs substrate to at least the 11 barrier layer, wherein the copper contact layer is coupled to the wall of the via abse nt 12 intening4aye s.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 5. The GaAs integrated circuit device according 2 to claim 4, wherein the seed layer comprises copper.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 1 1 3. -21. 22. A GaAs power amplifier assembly, 2 comprising: 3 a GaAs substrate having a contact side; 4 a NiV barrier layer disposed on the contact side; 5 a via having a wall and extending through the GaAs pewer-amplifier substrate to 6 at least the NiV barrier layer; 7 a copper or gold seed layer disposed on the barrier layer; and 8 a copper contact layer disposed on the seed layer, the copper contact layer 9 coupled to the wall of the via a 10 c ir cu it beard sueh that w 11 pr 12 de.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs integrated circuit device
GaAs power amplifier assembly
Materials described outside the worked examples.
GaAs substrate
GaAs
copper contact layer
Cu
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,923,842Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs integrated circuit device, comprising: 2 a GaAs substrate having a contact side; 3 a copper contact layer coupled to the contact side of the GaAs substrate -4he 4 c 5 uf 6c 7 printed-circuit-board; 8 a barrier layer comprising NiV deposited between the copper contact layer and 9 the GaAs substrate; and 10 a via having a wall and extending through the GaAs substrate to at least the 11 barrier layer, wherein the copper contact layer is coupled to the wall of the via abse nt 12 intening4aye s.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 5. The GaAs integrated circuit device according 2 to claim 4, wherein the seed layer comprises copper.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 1 1 3. -21. 22. A GaAs power amplifier assembly, 2 comprising: 3 a GaAs substrate having a contact side; 4 a NiV barrier layer disposed on the contact side; 5 a via having a wall and extending through the GaAs pewer-amplifier substrate to 6 at least the NiV barrier layer; 7 a copper or gold seed layer disposed on the barrier layer; and 8 a copper contact layer disposed on the seed layer, the copper contact layer 9 coupled to the wall of the via a 10 c ir cu it beard sueh that w 11 pr 12 de.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs integrated circuit device
GaAs power amplifier assembly
Materials described outside the worked examples.
GaAs substrate
GaAs
copper contact layer
Cu
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,923,842Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs integrated circuit device, comprising: 2 a GaAs substrate having a contact side; 3 a copper contact layer coupled to the contact side of the GaAs substrate -4he 4 c 5 uf 6c 7 printed-circuit-board; 8 a barrier layer comprising NiV deposited between the copper contact layer and 9 the GaAs substrate; and 10 a via having a wall and extending through the GaAs substrate to at least the 11 barrier layer, wherein the copper contact layer is coupled to the wall of the via abse nt 12 intening4aye s.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 5. The GaAs integrated circuit device according 2 to claim 4, wherein the seed layer comprises copper.
Patent SLG Docket No.: 19308.0070U₁ 0 5SKY 0071 1 1 1 3. -21. 22. A GaAs power amplifier assembly, 2 comprising: 3 a GaAs substrate having a contact side; 4 a NiV barrier layer disposed on the contact side; 5 a via having a wall and extending through the GaAs pewer-amplifier substrate to 6 at least the NiV barrier layer; 7 a copper or gold seed layer disposed on the barrier layer; and 8 a copper contact layer disposed on the seed layer, the copper contact layer 9 coupled to the wall of the via a 10 c ir cu it beard sueh that w 11 pr 12 de.
Layer stacks claimed or described, ordered top of device to substrate.
GaAs integrated circuit device
GaAs power amplifier assembly
Materials described outside the worked examples.
GaAs substrate
GaAs
copper contact layer
Cu
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 500–2000 Å | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
NiV barrier layer
NiV
copper or gold seed layer
organic solder preservative
titanium tungsten
TiW
| — |
Thickness | 100–900 Å | — |
Thickness | 30–40 µm | — |
NiV barrier layer
NiV
copper or gold seed layer
organic solder preservative
titanium tungsten
TiW
| — |
Thickness | 100–900 Å | — |
Thickness | 30–40 µm | — |
NiV barrier layer
NiV
copper or gold seed layer
organic solder preservative
titanium tungsten
TiW
| — |
Thickness | 100–900 Å | — |
Thickness | 30–40 µm | — |
NiV barrier layer
NiV
copper or gold seed layer
organic solder preservative
titanium tungsten
TiW
| — |
Thickness | 100–900 Å | — |
Thickness | 30–40 µm | — |