Patent
US 11,081,613Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same
Yakov Roizin, Carmel Sahar, Victor Kairys, Ruth Shima-Edelstein
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,081,613Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An ultraviolet (UV) light sensor comprising: a gallium nitride (GaN) stack including a lower GaN layer formed over a nucleation layer, and an upper GaN layer formed over the lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two-dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer; an aluminum gallium nitride (AlGaN) layer formed over the upper surface of the upper GaN layer; a source contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the source contact is electrically coupled to the 2DEG conductive channel; a drain contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the drain contact is electrically coupled to the 2DEG conductive channel; and a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact, wherein an electrical current between the source contact and the drain contact is a function of UV light received by the GaN stack.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a silicon substrate.
The UV light sensor of claim 1, further comprising a third G aN layer having a thickness of 1 n m to 3 n m formed over the Al G aN layer.
The UV light sensor of claim 1, further comprising a dielectric layer having a thickness of 5 nm to 200 nm formed over the AlGaN layer.
The UV light sensor of claim 1, further comprising an AlN layer having a thickness of 1 n m to 2 nm formed between the Al G aN layer and the upper G aN layer.
The UV light sensor of claim 1, wherein the G aN stack has a thickness in the range 0.5 u m to 6 um.
The UV light sensor of claim 1, wherein the lower GaN layer is an unintentionally doped n-type layer.
The U V light sensor of claim 1, wherein the source contact and the drain contact are separated by 1 u m to 3000 um.
The U V light sensor of claim 1, wherein the Al GaN layer has a doughnut shape between the source contact and the drain contact.
The UV light sensor of claim 1, wherein the source contact and the drain contact comprise interdigitated structures.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a substrate, the UV light sensor further comprising a cavity formed through the substrate to the lower GaN layer.
The UV light sensor of claim 1, further comprising a front side electrode that extends through the upper GaN layer to contact the lower GaN layer.
A method of operating an ultraviolet (UV) light sensor comprising: applying a first voltage across a source contact and a drain contact located on an upper gallium nitride (GaN) layer, wherein the upper GaN layer is located on a lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two- dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer, wherein the first voltage results in the formation of a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact; then measuring an electrical current between the source contact and the drain contact while the first voltage is applied across the source contact and the drain contact, wherein the electrical current is a function of UV light received by the upper and lower GaN layers; and then refreshing the UV light sensor by applying a second voltage to the lower GaN layer when no electrical current is flowing between the source contact and the drain contact.
The method of Claim 20 wherein the first voltage is in the range of 3 Volts to 50 Volts.
The method of Claim 20, wherein refreshing the UV light sensor further comprises forcing current through a heater to increase the temperature of the upper and lower GaN layers.
The method of Claim 20, wherein refreshing the UV light sensor further comprises applying 0 Volts to the drain contact while applying the second voltage to the lower GaN layer.
The method of Claim 20, wherein the second voltage is in the range of 3 Volts to 50 Volts.
The method of claim 20, further comprising allowing the lower GaN layer to float while applying the first voltage across the source contact and the drain contact.
An ultraviolet (UV) light sensor comprising: a first gallium nitride (GaN) layer formed over a nucleation layer; a first aluminum gallium nitride (AlGaN) layer formed over the first GaN layer, wherein a first two- dimensional electron gas surface of the first GaN layer, adjacent to the first the first AlGaN layer; a second AlGaN layer formed two-dimensional electron gas (2DEG) conductive GaN layer, adjacent to the second AlGaN layer; a AlGaN layer and is electrically coupled to the that extends through the second AlGaN layer and conductive channel; and a drain depletion region layer to the first 2DEG conductive channel under between the source contact and the drain contact layer.
The UV light sensor of claim 34, further connection to the first 2DEG conductive channel. (2DEG) conductive channel exists at an upper AlGaN layer; a second GaN layer formed over over the second GaN layer, wherein a second channel exists at an upper surface of the second source contact that extends through the second second 2DEG conductive channel; a drain contact is electrically coupled to the second 2DEG that extends from the upper surface of the GaN the drain contact, wherein an electrical current is a function of UV light received by the GaN comprising an electrode that provides an electrical
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN UV light sensor (2-layer GaN stack)
Materials described outside the worked examples.
lower GaN layer (low-resistance GaN)
GaN
AlGaN barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 1000–1000000 Ohm/sq | GaN |
Fet Sheet Resistance | 1000000–1000000000000 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,081,613Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An ultraviolet (UV) light sensor comprising: a gallium nitride (GaN) stack including a lower GaN layer formed over a nucleation layer, and an upper GaN layer formed over the lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two-dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer; an aluminum gallium nitride (AlGaN) layer formed over the upper surface of the upper GaN layer; a source contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the source contact is electrically coupled to the 2DEG conductive channel; a drain contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the drain contact is electrically coupled to the 2DEG conductive channel; and a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact, wherein an electrical current between the source contact and the drain contact is a function of UV light received by the GaN stack.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a silicon substrate.
The UV light sensor of claim 1, further comprising a third G aN layer having a thickness of 1 n m to 3 n m formed over the Al G aN layer.
The UV light sensor of claim 1, further comprising a dielectric layer having a thickness of 5 nm to 200 nm formed over the AlGaN layer.
The UV light sensor of claim 1, further comprising an AlN layer having a thickness of 1 n m to 2 nm formed between the Al G aN layer and the upper G aN layer.
The UV light sensor of claim 1, wherein the G aN stack has a thickness in the range 0.5 u m to 6 um.
The UV light sensor of claim 1, wherein the lower GaN layer is an unintentionally doped n-type layer.
The U V light sensor of claim 1, wherein the source contact and the drain contact are separated by 1 u m to 3000 um.
The U V light sensor of claim 1, wherein the Al GaN layer has a doughnut shape between the source contact and the drain contact.
The UV light sensor of claim 1, wherein the source contact and the drain contact comprise interdigitated structures.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a substrate, the UV light sensor further comprising a cavity formed through the substrate to the lower GaN layer.
The UV light sensor of claim 1, further comprising a front side electrode that extends through the upper GaN layer to contact the lower GaN layer.
A method of operating an ultraviolet (UV) light sensor comprising: applying a first voltage across a source contact and a drain contact located on an upper gallium nitride (GaN) layer, wherein the upper GaN layer is located on a lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two- dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer, wherein the first voltage results in the formation of a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact; then measuring an electrical current between the source contact and the drain contact while the first voltage is applied across the source contact and the drain contact, wherein the electrical current is a function of UV light received by the upper and lower GaN layers; and then refreshing the UV light sensor by applying a second voltage to the lower GaN layer when no electrical current is flowing between the source contact and the drain contact.
The method of Claim 20 wherein the first voltage is in the range of 3 Volts to 50 Volts.
The method of Claim 20, wherein refreshing the UV light sensor further comprises forcing current through a heater to increase the temperature of the upper and lower GaN layers.
The method of Claim 20, wherein refreshing the UV light sensor further comprises applying 0 Volts to the drain contact while applying the second voltage to the lower GaN layer.
The method of Claim 20, wherein the second voltage is in the range of 3 Volts to 50 Volts.
The method of claim 20, further comprising allowing the lower GaN layer to float while applying the first voltage across the source contact and the drain contact.
An ultraviolet (UV) light sensor comprising: a first gallium nitride (GaN) layer formed over a nucleation layer; a first aluminum gallium nitride (AlGaN) layer formed over the first GaN layer, wherein a first two- dimensional electron gas surface of the first GaN layer, adjacent to the first the first AlGaN layer; a second AlGaN layer formed two-dimensional electron gas (2DEG) conductive GaN layer, adjacent to the second AlGaN layer; a AlGaN layer and is electrically coupled to the that extends through the second AlGaN layer and conductive channel; and a drain depletion region layer to the first 2DEG conductive channel under between the source contact and the drain contact layer.
The UV light sensor of claim 34, further connection to the first 2DEG conductive channel. (2DEG) conductive channel exists at an upper AlGaN layer; a second GaN layer formed over over the second GaN layer, wherein a second channel exists at an upper surface of the second source contact that extends through the second second 2DEG conductive channel; a drain contact is electrically coupled to the second 2DEG that extends from the upper surface of the GaN the drain contact, wherein an electrical current is a function of UV light received by the GaN comprising an electrode that provides an electrical
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN UV light sensor (2-layer GaN stack)
Materials described outside the worked examples.
lower GaN layer (low-resistance GaN)
GaN
AlGaN barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 1000–1000000 Ohm/sq | GaN |
Fet Sheet Resistance | 1000000–1000000000000 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,081,613Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An ultraviolet (UV) light sensor comprising: a gallium nitride (GaN) stack including a lower GaN layer formed over a nucleation layer, and an upper GaN layer formed over the lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two-dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer; an aluminum gallium nitride (AlGaN) layer formed over the upper surface of the upper GaN layer; a source contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the source contact is electrically coupled to the 2DEG conductive channel; a drain contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the drain contact is electrically coupled to the 2DEG conductive channel; and a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact, wherein an electrical current between the source contact and the drain contact is a function of UV light received by the GaN stack.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a silicon substrate.
The UV light sensor of claim 1, further comprising a third G aN layer having a thickness of 1 n m to 3 n m formed over the Al G aN layer.
The UV light sensor of claim 1, further comprising a dielectric layer having a thickness of 5 nm to 200 nm formed over the AlGaN layer.
The UV light sensor of claim 1, further comprising an AlN layer having a thickness of 1 n m to 2 nm formed between the Al G aN layer and the upper G aN layer.
The UV light sensor of claim 1, wherein the G aN stack has a thickness in the range 0.5 u m to 6 um.
The UV light sensor of claim 1, wherein the lower GaN layer is an unintentionally doped n-type layer.
The U V light sensor of claim 1, wherein the source contact and the drain contact are separated by 1 u m to 3000 um.
The U V light sensor of claim 1, wherein the Al GaN layer has a doughnut shape between the source contact and the drain contact.
The UV light sensor of claim 1, wherein the source contact and the drain contact comprise interdigitated structures.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a substrate, the UV light sensor further comprising a cavity formed through the substrate to the lower GaN layer.
The UV light sensor of claim 1, further comprising a front side electrode that extends through the upper GaN layer to contact the lower GaN layer.
A method of operating an ultraviolet (UV) light sensor comprising: applying a first voltage across a source contact and a drain contact located on an upper gallium nitride (GaN) layer, wherein the upper GaN layer is located on a lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two- dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer, wherein the first voltage results in the formation of a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact; then measuring an electrical current between the source contact and the drain contact while the first voltage is applied across the source contact and the drain contact, wherein the electrical current is a function of UV light received by the upper and lower GaN layers; and then refreshing the UV light sensor by applying a second voltage to the lower GaN layer when no electrical current is flowing between the source contact and the drain contact.
The method of Claim 20 wherein the first voltage is in the range of 3 Volts to 50 Volts.
The method of Claim 20, wherein refreshing the UV light sensor further comprises forcing current through a heater to increase the temperature of the upper and lower GaN layers.
The method of Claim 20, wherein refreshing the UV light sensor further comprises applying 0 Volts to the drain contact while applying the second voltage to the lower GaN layer.
The method of Claim 20, wherein the second voltage is in the range of 3 Volts to 50 Volts.
The method of claim 20, further comprising allowing the lower GaN layer to float while applying the first voltage across the source contact and the drain contact.
An ultraviolet (UV) light sensor comprising: a first gallium nitride (GaN) layer formed over a nucleation layer; a first aluminum gallium nitride (AlGaN) layer formed over the first GaN layer, wherein a first two- dimensional electron gas surface of the first GaN layer, adjacent to the first the first AlGaN layer; a second AlGaN layer formed two-dimensional electron gas (2DEG) conductive GaN layer, adjacent to the second AlGaN layer; a AlGaN layer and is electrically coupled to the that extends through the second AlGaN layer and conductive channel; and a drain depletion region layer to the first 2DEG conductive channel under between the source contact and the drain contact layer.
The UV light sensor of claim 34, further connection to the first 2DEG conductive channel. (2DEG) conductive channel exists at an upper AlGaN layer; a second GaN layer formed over over the second GaN layer, wherein a second channel exists at an upper surface of the second source contact that extends through the second second 2DEG conductive channel; a drain contact is electrically coupled to the second 2DEG that extends from the upper surface of the GaN the drain contact, wherein an electrical current is a function of UV light received by the GaN comprising an electrode that provides an electrical
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN UV light sensor (2-layer GaN stack)
Materials described outside the worked examples.
lower GaN layer (low-resistance GaN)
GaN
AlGaN barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 1000–1000000 Ohm/sq | GaN |
Fet Sheet Resistance | 1000000–1000000000000 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,081,613Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An ultraviolet (UV) light sensor comprising: a gallium nitride (GaN) stack including a lower GaN layer formed over a nucleation layer, and an upper GaN layer formed over the lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two-dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer; an aluminum gallium nitride (AlGaN) layer formed over the upper surface of the upper GaN layer; a source contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the source contact is electrically coupled to the 2DEG conductive channel; a drain contact that extends through the AlGaN layer and contacts the upper surface of the upper GaN layer, whereby the drain contact is electrically coupled to the 2DEG conductive channel; and a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact, wherein an electrical current between the source contact and the drain contact is a function of UV light received by the GaN stack.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a silicon substrate.
The UV light sensor of claim 1, further comprising a third G aN layer having a thickness of 1 n m to 3 n m formed over the Al G aN layer.
The UV light sensor of claim 1, further comprising a dielectric layer having a thickness of 5 nm to 200 nm formed over the AlGaN layer.
The UV light sensor of claim 1, further comprising an AlN layer having a thickness of 1 n m to 2 nm formed between the Al G aN layer and the upper G aN layer.
The UV light sensor of claim 1, wherein the G aN stack has a thickness in the range 0.5 u m to 6 um.
The UV light sensor of claim 1, wherein the lower GaN layer is an unintentionally doped n-type layer.
The U V light sensor of claim 1, wherein the source contact and the drain contact are separated by 1 u m to 3000 um.
The U V light sensor of claim 1, wherein the Al GaN layer has a doughnut shape between the source contact and the drain contact.
The UV light sensor of claim 1, wherein the source contact and the drain contact comprise interdigitated structures.
The UV light sensor of claim 1, wherein the nucleation layer is formed over a substrate, the UV light sensor further comprising a cavity formed through the substrate to the lower GaN layer.
The UV light sensor of claim 1, further comprising a front side electrode that extends through the upper GaN layer to contact the lower GaN layer.
A method of operating an ultraviolet (UV) light sensor comprising: applying a first voltage across a source contact and a drain contact located on an upper gallium nitride (GaN) layer, wherein the upper GaN layer is located on a lower GaN layer, wherein the lower GaN layer has a lower resistivity than the upper GaN layer, and wherein a two- dimensional electron gas (2DEG) conductive channel exists at an upper surface of the upper GaN layer, wherein the first voltage results in the formation of a drain depletion region that extends from the upper surface of the upper GaN layer to the lower GaN layer under the drain contact; then measuring an electrical current between the source contact and the drain contact while the first voltage is applied across the source contact and the drain contact, wherein the electrical current is a function of UV light received by the upper and lower GaN layers; and then refreshing the UV light sensor by applying a second voltage to the lower GaN layer when no electrical current is flowing between the source contact and the drain contact.
The method of Claim 20 wherein the first voltage is in the range of 3 Volts to 50 Volts.
The method of Claim 20, wherein refreshing the UV light sensor further comprises forcing current through a heater to increase the temperature of the upper and lower GaN layers.
The method of Claim 20, wherein refreshing the UV light sensor further comprises applying 0 Volts to the drain contact while applying the second voltage to the lower GaN layer.
The method of Claim 20, wherein the second voltage is in the range of 3 Volts to 50 Volts.
The method of claim 20, further comprising allowing the lower GaN layer to float while applying the first voltage across the source contact and the drain contact.
An ultraviolet (UV) light sensor comprising: a first gallium nitride (GaN) layer formed over a nucleation layer; a first aluminum gallium nitride (AlGaN) layer formed over the first GaN layer, wherein a first two- dimensional electron gas surface of the first GaN layer, adjacent to the first the first AlGaN layer; a second AlGaN layer formed two-dimensional electron gas (2DEG) conductive GaN layer, adjacent to the second AlGaN layer; a AlGaN layer and is electrically coupled to the that extends through the second AlGaN layer and conductive channel; and a drain depletion region layer to the first 2DEG conductive channel under between the source contact and the drain contact layer.
The UV light sensor of claim 34, further connection to the first 2DEG conductive channel. (2DEG) conductive channel exists at an upper AlGaN layer; a second GaN layer formed over over the second GaN layer, wherein a second channel exists at an upper surface of the second source contact that extends through the second second 2DEG conductive channel; a drain contact is electrically coupled to the second 2DEG that extends from the upper surface of the GaN the drain contact, wherein an electrical current is a function of UV light received by the GaN comprising an electrode that provides an electrical
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN UV light sensor (2-layer GaN stack)
Materials described outside the worked examples.
lower GaN layer (low-resistance GaN)
GaN
AlGaN barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | 1000–1000000 Ohm/sq | GaN |
Fet Sheet Resistance | 1000000–1000000000000 Ohm/sq |
Related documents with shared materials, methods, properties, or citations.
AlGaN/GaN UV light sensor (dual 2DEG stack)
silicon substrate
Si
dielectric layer
silicon nitride dielectric layer
Si₃N₄
AlN interlayer
AlN
Fet Sheet Resistance | — | GaN |
Thickness | 255–360 nm | — |
Thickness | 0.5–6 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–4 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 1–2 nm | — |
Thickness | 5–200 nm | — |
Thickness | 1–1000 um | — |
AlGaN/GaN UV light sensor (dual 2DEG stack)
silicon substrate
Si
dielectric layer
silicon nitride dielectric layer
Si₃N₄
AlN interlayer
AlN
Fet Sheet Resistance | — | GaN |
Thickness | 255–360 nm | — |
Thickness | 0.5–6 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–4 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 1–2 nm | — |
Thickness | 5–200 nm | — |
Thickness | 1–1000 um | — |
AlGaN/GaN UV light sensor (dual 2DEG stack)
silicon substrate
Si
dielectric layer
silicon nitride dielectric layer
Si₃N₄
AlN interlayer
AlN
Fet Sheet Resistance | — | GaN |
Thickness | 255–360 nm | — |
Thickness | 0.5–6 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–4 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 1–2 nm | — |
Thickness | 5–200 nm | — |
Thickness | 1–1000 um | — |
AlGaN/GaN UV light sensor (dual 2DEG stack)
silicon substrate
Si
dielectric layer
silicon nitride dielectric layer
Si₃N₄
AlN interlayer
AlN
Fet Sheet Resistance | — | GaN |
Thickness | 255–360 nm | — |
Thickness | 0.5–6 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 1–5 µm | — |
Thickness | 1–4 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 1–2 nm | — |
Thickness | 5–200 nm | — |
Thickness | 1–1000 um | — |