METHOD OF FORMING A GAN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA

Ruth Shima-Edelstein; Ronen Shaul; Roy Strul; Anatoly Sergienko; Liz Poliak; Ido Gilad; Alex Sirkis; Yakov Roizin

Patent

Atlas literature

Patent

US 11,843,043 B2

METHOD OF FORMING A GAN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA

Ruth Shima-Edelstein, Ronen Shaul, Roy Strul, Anatoly Sergienko et al.

Tower Semiconductor Ltd., Migdal Haemek (IL)·Dec. 12, 2023·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a cross sectional view of a conventional GaN/AlGaN sensor having a thinned AlGaN layer.

FIG. 2

FIGS. 2A, 2B, 2C, 2D, 2E, 2F, 2G, 2H, 2I, 2J and 2K are cross sectional views of a GaN sensor, which includes a gate dielectric having a sloped proﬁle, during …

FIG. 3

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3I, 3J, 3K and 3L are cross sectional views of a GaN sensor, which includes a gate dielectric having a sloped proﬁle and …

FIG. 4

FIGS. 4A, 4B, 4C and 4D are cross sectional views of a GaN sensor, which includes dielectric sidewall spacers, during various processing steps in accordance …

FIG. 5

FIGS. 5A, 5B, 5C and 5D are cross sectional views of a GaN sensor, which includes dielectric sidewall spacers and an etch stop layer, during various processing …

FIG. 6

process tool top view

FIG. 6 is a top view of a sensor including a 2DEG resistor in accordance with various embodiments of the present invention.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 31 dependent

1
IndependentGaNAlGaNSi₃N₄GaN-based MIS HEMT sensor with sloped dielectric structures
A gallium nitride (GaN) based sensor comprising: a GaN hetero-structure that comprises a GaN layer and a ﬁrst barrier layer located over the GaN layer, wherein a 2-dimensional electron gas (2DEG) channel is located at an upper surface of the GaN layer, adjacent to the ﬁrst barrier layer; a plurality of dielectric structures located over the GaN hetero-structure; a source contact that extends through a ﬁrst one of the plurality of dielectric structures and the ﬁrst barrier layer to contact the 2DEG channel; a drain contact that extends through a second one of the plurality of dielectric structures and the ﬁrst barrier layer to contact the 2DEG channel; and a plurality of gate electrodes that extend over correspond-ing ones of the plurality of dielectric structures and the 2DEG channel, wherein the gate electrodes are located between the source contact and the drain contact; wherein the source contact, the drain contact and the gate electrodes have sidewalls that are vertical with respect to an upper surface of the ﬁrst barrier layer, and each of the plurality of dielectric structures have sidewalls that are sloped at an acute angle with respect to the upper surface of the ﬁrst barrier layer.
1. 2
  Dependent← claim 1GaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein the ﬁrst barrier layer is thinned in regions located between the plurality of dielectric structures.
2. 3
  Dependent← claim 1AlGaNGaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein the ﬁrst barrier layer comprises aluminum gallium nitride (AlGaN).
3. 4
  Dependent← claim 1GaNGaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein the GaN heterostructure is located over a substrate.
4. 7
  Dependent← claim 1metalGaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein the source contact, the drain contact and the gate electrodes comprise metal.
5. 8
  Dependent← claim 1AlGaNAlGaNGaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, where the GaN hetero-structure further comprises an etch stop layer located over the ﬁrst barrier layer, and a second barrier layer located over the etch stop layer, wherein the second barrier layer is removed in regions located between the plurality of dielectric structures.
6. 11
  Dependent← claim 1Si₃N₄GaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein the plurality of dielectric structures comprise silicon nitride.
7. 12
  Dependent← claim 1GaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein the acute angle is greater than 20 degrees.
8. 13
  Dependent← claim 1GaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein the acute angle is less than 70 degrees.
9. 14
  Dependent← claim 1GaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, further comprising dielectric spacers located adjacent to the sidewalls of the source contact, drain contact and gate electrodes.
10. 17
  Dependent← claim 1GaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, wherein a pair of the plurality of gate electrodes are separated by a gap that deﬁnes a sensing region of the sensor.
11. 20
  Dependent← claim 1GaNGaN-based MIS HEMT sensor with sloped dielectric structures
  The sensor of claim 1, further comprising contacts that provide electrical connections to the GaN layer.
21
IndependentGaNAlGaNSi₃N₄GaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
A gallium nitride (GaN) based sensor comprising: a GaN hetero-structure that comprises a GaN layer and a ﬁrst barrier layer located over the GaN layer, wherein a 2-dimensional electron gas (2DEG) channel is located at an upper surface of the GaN layer, adjacent to the ﬁrst barrier layer; a plurality of dielectric structures located over the GaN hetero-structure; a source contact that extends through a ﬁrst one of the plurality of dielectric structures and the ﬁrst barrier layer to contact the 2DEG channel; a drain contact that extends through a second one of the plurality of dielectric structures and the ﬁrst barrier layer to contact the 2DEG channel; and a plurality of gate electrodes that extend over correspond-ing ones of the plurality of dielectric structures and the 2DEG channel, wherein the gate electrodes are located between the source contact and the drain contact, wherein the source contact, the drain contact, the gate electrodes and the plurality of dielectric structures have sidewalls that are vertical with respect to an upper surface of the ﬁrst barrier layer; and dielectric spacers located immediately adjacent to the sidewalls of the source contact, the drain contact, the gate electrodes and the plurality of dielectric structures.
1. 22
  Dependent← claim 21GaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
  The sensor of claim 21, wherein the ﬁrst barrier layer is thinned in regions located between the plurality of dielec-tric structures.
2. 23
  Dependent← claim 21AlGaNGaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
  The sensor of claim 21, wherein the ﬁrst barrier layer comprises aluminum gallium nitride (AlGaN).
3. 24
  Dependent← claim 21GaNGaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
  The sensor of claim 21, wherein the GaN heterostructure is located over a substrate.
4. 27
  Dependent← claim 21metalGaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
  The sensor of claim 21, wherein the source contact, the drain contact and the gate electrodes comprise metal.
5. 28
  Dependent← claim 21AlGaNAlGaNGaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
  The sensor of claim 21, where the GaN heterostructure further comprises an etch stop layer located over the ﬁrst barrier layer, and a second barrier layer located over the etch stop layer, wherein the second barrier layer is removed in regions located between the plurality of dielec-tric structures.
6. 31
  Dependent← claim 21GaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
  The sensor of claim 21, wherein a pair of the plurality of gate electrodes are separated by a gap that deﬁnes a sensing region of the sensor.
7. 33
  Dependent← claim 21functionalization layerGaN-based MIS HEMT sensor with vertical dielectric structures and dielectric spacers
  The sensor of claim 21, further comprising a func-tionalization layer located over the GaN heterostructure in the sensing region, wherein the functionalization layer aids in the detection of an external inﬂuence. ∗ ∗ ∗ ∗ ∗

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based MIS HEMT sensor with sloped dielectric structures

metalsource drain and gate electrodes vertical sidewalls

Si₃N₄gate dielectric structures sloped sidewalls

GaNcap layer

AlGaNfirst barrier layer

GaNchannel layer

AlNnucleation layer

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Channel Layer

Cap Layer

aluminum gallium nitride

AlGaN

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Epitaxy

Step 1

Process details

method:MOCVD

temperature c max:5

temperature c min:1

GaN cap thickness nm:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
2DEG channel sheet resistance	500–500	GaN
GaN buffer sheet resistance	1000000–5000000

Cited prior art

Patents and literature cited by this patent (applicant and examiner references).

Cited patents · 5

US 9,570,600 B29,570,600 B2 2/2017 Lu et al.
US 2011/0272742 A12011/0272742 A1 * 11/2011 Akiyama.......... H01L 29/41725examiner
WO 2018069553 A1WO 2018069553 A1 4/2018
US 2019/0170738 A12019/0170738 A1 6/2019 Ren et al.
US 2019/0267467 A12019/0267467 A1 8/2019 Yoshimochi

Cited non-patent literature · 8

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD OF FORMING A GAN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA | Matter42 Literature

Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Anderson, Travis, et al., article entitled “Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices”, Sensors 2009, ISSN 1424-8220 (www.mdpi.com/journal/sensors); 26 pages.
Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning. Dowling, Karen M., et al. article entitled “Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning”, published in IEEE Sensors Letter, vol. 3, Issue 3, Mar. 2019, 6 pages. Eickhoff, M, et al. article entitled “Electronics and sensors based on pyroelectric AIGaN/heterostructures”, phys. stat. sol. (c) O, No. 6, 1908-1918 (2003, 11 pages.
Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems. Halfaya, Yacine et al., article entitled “Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems”, Sensors 2016, 16,273; doi:10. 3390/s16030273 (www.mdpi.com/journal/sensors), 12 pages.
Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating. Hou, Minmin et al., article entitled “Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating”, IEEE Electron Device Letters, vol. 38, No. 1, Jan. 2017, 4 pages. Hung, S.C., et al. article entitled “Detection of chloride ions using an integrated Ag/AgC1 electrode with A1GaN/GaN high electron mobility transistors”, Appl. Phys. Lett. 92, 193903 (2008, 4 pages. Iskierko, Zoﬁa et al., article entitled “Molecular recognition by synthetic receptors: Application in ﬁeld-effect transistor based chemosensing”, Biosensors and Bioelectronics 109 (2018), 13 pages.
Exposing Pollutants With GaN HEMTs. Offermans, Peter, article entitled “Exposing Pollutants With GaN HEMTs”, Sep. 30, 2016, appeared in Compound Semiconductor magazine, 11 pages.
A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications. Ren, Fan et al., article entitled “A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications”, published Jul. 19, 2011, 55 pages (www.intechopen.com).
2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems. Suria, Ateeq et al., article entitled “2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems”, https//:www.researchgate.net/publication/304115246, Conference Paper Jun. 2016, 5 pages. Vitushinsky, R. et al., article entitled “A1GaN Ultrathinned 2DEG Structures For... ”, WOCSDICE 2011—Catania (Ital), May 29-Jun. 1, 2011, 2 pages.
A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents. White, Thomas P., et al. article entitled “A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents”, IEEE Sensors Journsel, vol. 18, No. 7, Apr. 1, 2018, 8 pages.

Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Anderson, Travis, et al., article entitled “Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices”, Sensors 2009, ISSN 1424-8220 (www.mdpi.com/journal/sensors); 26 pages.
Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning. Dowling, Karen M., et al. article entitled “Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning”, published in IEEE Sensors Letter, vol. 3, Issue 3, Mar. 2019, 6 pages. Eickhoff, M, et al. article entitled “Electronics and sensors based on pyroelectric AIGaN/heterostructures”, phys. stat. sol. (c) O, No. 6, 1908-1918 (2003, 11 pages.
Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems. Halfaya, Yacine et al., article entitled “Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems”, Sensors 2016, 16,273; doi:10. 3390/s16030273 (www.mdpi.com/journal/sensors), 12 pages.
Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating. Hou, Minmin et al., article entitled “Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating”, IEEE Electron Device Letters, vol. 38, No. 1, Jan. 2017, 4 pages. Hung, S.C., et al. article entitled “Detection of chloride ions using an integrated Ag/AgC1 electrode with A1GaN/GaN high electron mobility transistors”, Appl. Phys. Lett. 92, 193903 (2008, 4 pages. Iskierko, Zoﬁa et al., article entitled “Molecular recognition by synthetic receptors: Application in ﬁeld-effect transistor based chemosensing”, Biosensors and Bioelectronics 109 (2018), 13 pages.
Exposing Pollutants With GaN HEMTs. Offermans, Peter, article entitled “Exposing Pollutants With GaN HEMTs”, Sep. 30, 2016, appeared in Compound Semiconductor magazine, 11 pages.
A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications. Ren, Fan et al., article entitled “A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications”, published Jul. 19, 2011, 55 pages (www.intechopen.com).
2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems. Suria, Ateeq et al., article entitled “2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems”, https//:www.researchgate.net/publication/304115246, Conference Paper Jun. 2016, 5 pages. Vitushinsky, R. et al., article entitled “A1GaN Ultrathinned 2DEG Structures For... ”, WOCSDICE 2011—Catania (Ital), May 29-Jun. 1, 2011, 2 pages.
A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents. White, Thomas P., et al. article entitled “A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents”, IEEE Sensors Journsel, vol. 18, No. 7, Apr. 1, 2018, 8 pages.

Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Anderson, Travis, et al., article entitled “Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices”, Sensors 2009, ISSN 1424-8220 (www.mdpi.com/journal/sensors); 26 pages.
Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning. Dowling, Karen M., et al. article entitled “Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning”, published in IEEE Sensors Letter, vol. 3, Issue 3, Mar. 2019, 6 pages. Eickhoff, M, et al. article entitled “Electronics and sensors based on pyroelectric AIGaN/heterostructures”, phys. stat. sol. (c) O, No. 6, 1908-1918 (2003, 11 pages.
Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems. Halfaya, Yacine et al., article entitled “Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems”, Sensors 2016, 16,273; doi:10. 3390/s16030273 (www.mdpi.com/journal/sensors), 12 pages.
Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating. Hou, Minmin et al., article entitled “Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating”, IEEE Electron Device Letters, vol. 38, No. 1, Jan. 2017, 4 pages. Hung, S.C., et al. article entitled “Detection of chloride ions using an integrated Ag/AgC1 electrode with A1GaN/GaN high electron mobility transistors”, Appl. Phys. Lett. 92, 193903 (2008, 4 pages. Iskierko, Zoﬁa et al., article entitled “Molecular recognition by synthetic receptors: Application in ﬁeld-effect transistor based chemosensing”, Biosensors and Bioelectronics 109 (2018), 13 pages.
Exposing Pollutants With GaN HEMTs. Offermans, Peter, article entitled “Exposing Pollutants With GaN HEMTs”, Sep. 30, 2016, appeared in Compound Semiconductor magazine, 11 pages.
A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications. Ren, Fan et al., article entitled “A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications”, published Jul. 19, 2011, 55 pages (www.intechopen.com).
2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems. Suria, Ateeq et al., article entitled “2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems”, https//:www.researchgate.net/publication/304115246, Conference Paper Jun. 2016, 5 pages. Vitushinsky, R. et al., article entitled “A1GaN Ultrathinned 2DEG Structures For... ”, WOCSDICE 2011—Catania (Ital), May 29-Jun. 1, 2011, 2 pages.
A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents. White, Thomas P., et al. article entitled “A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents”, IEEE Sensors Journsel, vol. 18, No. 7, Apr. 1, 2018, 8 pages.

Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Anderson, Travis, et al., article entitled “Advances In Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices”, Sensors 2009, ISSN 1424-8220 (www.mdpi.com/journal/sensors); 26 pages.
Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning. Dowling, Karen M., et al. article entitled “Micro-Tesla Offset in Thermally Stable A1GaN/GaN 2DEG Hall-effect Plates using Cur- rent Spinning”, published in IEEE Sensors Letter, vol. 3, Issue 3, Mar. 2019, 6 pages. Eickhoff, M, et al. article entitled “Electronics and sensors based on pyroelectric AIGaN/heterostructures”, phys. stat. sol. (c) O, No. 6, 1908-1918 (2003, 11 pages.
Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems. Halfaya, Yacine et al., article entitled “Investigation of the Perfor- mance of HEMT-Based NO, No2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems”, Sensors 2016, 16,273; doi:10. 3390/s16030273 (www.mdpi.com/journal/sensors), 12 pages.
Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating. Hou, Minmin et al., article entitled “Suppression of Persistent Photoconductivity A1GaN/GaN Ultraviolet Photodetectors Using In Situ Heating”, IEEE Electron Device Letters, vol. 38, No. 1, Jan. 2017, 4 pages. Hung, S.C., et al. article entitled “Detection of chloride ions using an integrated Ag/AgC1 electrode with A1GaN/GaN high electron mobility transistors”, Appl. Phys. Lett. 92, 193903 (2008, 4 pages. Iskierko, Zoﬁa et al., article entitled “Molecular recognition by synthetic receptors: Application in ﬁeld-effect transistor based chemosensing”, Biosensors and Bioelectronics 109 (2018), 13 pages.
Exposing Pollutants With GaN HEMTs. Offermans, Peter, article entitled “Exposing Pollutants With GaN HEMTs”, Sep. 30, 2016, appeared in Compound Semiconductor magazine, 11 pages.
A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications. Ren, Fan et al., article entitled “A1GaN/GaN High Electron Mobil- ity Transistor Based Sensors for Bio-Applications”, published Jul. 19, 2011, 55 pages (www.intechopen.com).
2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems. Suria, Ateeq et al., article entitled “2DEG-Heated A1GaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems”, https//:www.researchgate.net/publication/304115246, Conference Paper Jun. 2016, 5 pages. Vitushinsky, R. et al., article entitled “A1GaN Ultrathinned 2DEG Structures For... ”, WOCSDICE 2011—Catania (Ital), May 29-Jun. 1, 2011, 2 pages.
A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents. White, Thomas P., et al. article entitled “A1GAn/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Mea- surements From Line Currents”, IEEE Sensors Journsel, vol. 18, No. 7, Apr. 1, 2018, 8 pages.