Patent
US 11,522,079Electrostatically Controlled Gallium Nitride Based Sensor And Method Of Operating Same
Yakov Roizin, Victor Kairys, Ruth Shima-Edelstein
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,522,079Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatically controlled sensor comprising: a gallium nitride (GaN) layer; an aluminum gallium nitride (AlGaN) layer formed over an upper surface of the GaN layer, wherein a two-dimensional electron gas (2DEG) channel exists at the upper surface of the GaN layer; a source contact electrically coupled to the 2DEG channel through the AlGaN layer; a drain contact electrically coupled to the 2DEG channel through the AlGaN layer; and a gate dielectric formed over the AlGaN layer; a plurality of gate electrodes formed over the gate dielectric, wherein each of the gate electrodes extends from an area adjacent to the source contact to an area adjacent to the drain contact, wherein the plurality of gate electrodes are separated by one or more gaps, each of the one or more gaps extending between an area adjacent to the source contact and an area adjacent to the drain contact, wherein each of the one or more gaps defines a corresponding sensing area between the plurality of gate electrodes for receiving an external influence, and wherein each sensing area is located over a corresponding underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is formed over a silicon substrate. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a GaN layer located over the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the gate dielectric. Original
The electrostatically controlled sensor of claim 1, further comprising a functionalization layer located over each sensing area, wherein the functionalization layer interacts with the external influence to amplify a response in the underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes comprise metal. Original
The electrostatically controlled sensor of claim 1, where the plurality of gate electrodes have a thickness in the range of about 0.1 to 1 micron, and the gate dielectric has a thickness in the range of about 100 to 1000 Angstroms. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are in ohmic contact with the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes are commonly connected to an overlying metal trace. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are capacitively coupled to the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein each of the one or more gaps each has a width in the range of about 0.1 micron to 10 microns between the gate electrodes. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is located over a substrate, and wherein a cavity formed through a portion of the substrate exposes a portion of a lower surface of the GaN layer, wherein the plurality of gate electrodes are located over the cavity. Original
The electrostatically controlled sensor of claim 1, further comprising a front side electrode that extends through the AlGaN layer to contact the GaN layer. Original
The electrostatically controlled sensor of claim 1, wherein each sensing area is rectangular. Original
The electrostatically controlled sensor of claim 1, wherein an electrical current between the source contact and the drain contact is a function of exposure of each sensing area to the external influence. Original
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrostatically controlled GaN/AlGaN 2DEG sensor
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN layer sheet resistance | — | GaN |
2DEG channel sheet resistance | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,522,079Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatically controlled sensor comprising: a gallium nitride (GaN) layer; an aluminum gallium nitride (AlGaN) layer formed over an upper surface of the GaN layer, wherein a two-dimensional electron gas (2DEG) channel exists at the upper surface of the GaN layer; a source contact electrically coupled to the 2DEG channel through the AlGaN layer; a drain contact electrically coupled to the 2DEG channel through the AlGaN layer; and a gate dielectric formed over the AlGaN layer; a plurality of gate electrodes formed over the gate dielectric, wherein each of the gate electrodes extends from an area adjacent to the source contact to an area adjacent to the drain contact, wherein the plurality of gate electrodes are separated by one or more gaps, each of the one or more gaps extending between an area adjacent to the source contact and an area adjacent to the drain contact, wherein each of the one or more gaps defines a corresponding sensing area between the plurality of gate electrodes for receiving an external influence, and wherein each sensing area is located over a corresponding underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is formed over a silicon substrate. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a GaN layer located over the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the gate dielectric. Original
The electrostatically controlled sensor of claim 1, further comprising a functionalization layer located over each sensing area, wherein the functionalization layer interacts with the external influence to amplify a response in the underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes comprise metal. Original
The electrostatically controlled sensor of claim 1, where the plurality of gate electrodes have a thickness in the range of about 0.1 to 1 micron, and the gate dielectric has a thickness in the range of about 100 to 1000 Angstroms. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are in ohmic contact with the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes are commonly connected to an overlying metal trace. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are capacitively coupled to the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein each of the one or more gaps each has a width in the range of about 0.1 micron to 10 microns between the gate electrodes. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is located over a substrate, and wherein a cavity formed through a portion of the substrate exposes a portion of a lower surface of the GaN layer, wherein the plurality of gate electrodes are located over the cavity. Original
The electrostatically controlled sensor of claim 1, further comprising a front side electrode that extends through the AlGaN layer to contact the GaN layer. Original
The electrostatically controlled sensor of claim 1, wherein each sensing area is rectangular. Original
The electrostatically controlled sensor of claim 1, wherein an electrical current between the source contact and the drain contact is a function of exposure of each sensing area to the external influence. Original
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrostatically controlled GaN/AlGaN 2DEG sensor
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN layer sheet resistance | — | GaN |
2DEG channel sheet resistance | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,522,079Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatically controlled sensor comprising: a gallium nitride (GaN) layer; an aluminum gallium nitride (AlGaN) layer formed over an upper surface of the GaN layer, wherein a two-dimensional electron gas (2DEG) channel exists at the upper surface of the GaN layer; a source contact electrically coupled to the 2DEG channel through the AlGaN layer; a drain contact electrically coupled to the 2DEG channel through the AlGaN layer; and a gate dielectric formed over the AlGaN layer; a plurality of gate electrodes formed over the gate dielectric, wherein each of the gate electrodes extends from an area adjacent to the source contact to an area adjacent to the drain contact, wherein the plurality of gate electrodes are separated by one or more gaps, each of the one or more gaps extending between an area adjacent to the source contact and an area adjacent to the drain contact, wherein each of the one or more gaps defines a corresponding sensing area between the plurality of gate electrodes for receiving an external influence, and wherein each sensing area is located over a corresponding underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is formed over a silicon substrate. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a GaN layer located over the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the gate dielectric. Original
The electrostatically controlled sensor of claim 1, further comprising a functionalization layer located over each sensing area, wherein the functionalization layer interacts with the external influence to amplify a response in the underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes comprise metal. Original
The electrostatically controlled sensor of claim 1, where the plurality of gate electrodes have a thickness in the range of about 0.1 to 1 micron, and the gate dielectric has a thickness in the range of about 100 to 1000 Angstroms. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are in ohmic contact with the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes are commonly connected to an overlying metal trace. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are capacitively coupled to the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein each of the one or more gaps each has a width in the range of about 0.1 micron to 10 microns between the gate electrodes. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is located over a substrate, and wherein a cavity formed through a portion of the substrate exposes a portion of a lower surface of the GaN layer, wherein the plurality of gate electrodes are located over the cavity. Original
The electrostatically controlled sensor of claim 1, further comprising a front side electrode that extends through the AlGaN layer to contact the GaN layer. Original
The electrostatically controlled sensor of claim 1, wherein each sensing area is rectangular. Original
The electrostatically controlled sensor of claim 1, wherein an electrical current between the source contact and the drain contact is a function of exposure of each sensing area to the external influence. Original
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrostatically controlled GaN/AlGaN 2DEG sensor
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN layer sheet resistance | — | GaN |
2DEG channel sheet resistance | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,522,079Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatically controlled sensor comprising: a gallium nitride (GaN) layer; an aluminum gallium nitride (AlGaN) layer formed over an upper surface of the GaN layer, wherein a two-dimensional electron gas (2DEG) channel exists at the upper surface of the GaN layer; a source contact electrically coupled to the 2DEG channel through the AlGaN layer; a drain contact electrically coupled to the 2DEG channel through the AlGaN layer; and a gate dielectric formed over the AlGaN layer; a plurality of gate electrodes formed over the gate dielectric, wherein each of the gate electrodes extends from an area adjacent to the source contact to an area adjacent to the drain contact, wherein the plurality of gate electrodes are separated by one or more gaps, each of the one or more gaps extending between an area adjacent to the source contact and an area adjacent to the drain contact, wherein each of the one or more gaps defines a corresponding sensing area between the plurality of gate electrodes for receiving an external influence, and wherein each sensing area is located over a corresponding underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is formed over a silicon substrate. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a GaN layer located over the AlGaN layer. Original
The electrostatically controlled sensor of claim 1, wherein an upper surface of each sensing area comprises a portion of the gate dielectric. Original
The electrostatically controlled sensor of claim 1, further comprising a functionalization layer located over each sensing area, wherein the functionalization layer interacts with the external influence to amplify a response in the underlying 2DEG channel region of the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes comprise metal. Original
The electrostatically controlled sensor of claim 1, where the plurality of gate electrodes have a thickness in the range of about 0.1 to 1 micron, and the gate dielectric has a thickness in the range of about 100 to 1000 Angstroms. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are in ohmic contact with the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein the plurality of gate electrodes are commonly connected to an overlying metal trace. Original
The electrostatically controlled sensor of claim 1, wherein the source electrode and the drain electrode are capacitively coupled to the 2DEG channel. Original
The electrostatically controlled sensor of claim 1, wherein each of the one or more gaps each has a width in the range of about 0.1 micron to 10 microns between the gate electrodes. Original
The electrostatically controlled sensor of claim 1, wherein the GaN layer is located over a substrate, and wherein a cavity formed through a portion of the substrate exposes a portion of a lower surface of the GaN layer, wherein the plurality of gate electrodes are located over the cavity. Original
The electrostatically controlled sensor of claim 1, further comprising a front side electrode that extends through the AlGaN layer to contact the GaN layer. Original
The electrostatically controlled sensor of claim 1, wherein each sensing area is rectangular. Original
The electrostatically controlled sensor of claim 1, wherein an electrical current between the source contact and the drain contact is a function of exposure of each sensing area to the external influence. Original
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
(canceled herein) Canceled
Layer stacks claimed or described, ordered top of device to substrate.
electrostatically controlled GaN/AlGaN 2DEG sensor
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN layer sheet resistance | — | GaN |
2DEG channel sheet resistance | — |
Related documents with shared materials, methods, properties, or citations.
gate dielectric
silicon substrate
Si
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
aluminum nitride nucleation layer
AlN
two-dimensional electron gas channel
Thickness | 0.1–1 µm | — |
Thickness | 0.45–1 µm | — |
Thickness | 100000–1000000 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 0.3–3 µm | — |
Thickness | 0.1–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–5 nm | — |
Thickness | 100–1000 Å | — |
Thickness | 0.5–4 µm | — |
Thickness | 1–1.5 µm | — |
Thickness | 1–2 nm | — |
Thickness | 0.001 cm | — |
gate dielectric
silicon substrate
Si
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
aluminum nitride nucleation layer
AlN
two-dimensional electron gas channel
Thickness | 0.1–1 µm | — |
Thickness | 0.45–1 µm | — |
Thickness | 100000–1000000 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 0.3–3 µm | — |
Thickness | 0.1–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–5 nm | — |
Thickness | 100–1000 Å | — |
Thickness | 0.5–4 µm | — |
Thickness | 1–1.5 µm | — |
Thickness | 1–2 nm | — |
Thickness | 0.001 cm | — |
gate dielectric
silicon substrate
Si
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
aluminum nitride nucleation layer
AlN
two-dimensional electron gas channel
Thickness | 0.1–1 µm | — |
Thickness | 0.45–1 µm | — |
Thickness | 100000–1000000 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 0.3–3 µm | — |
Thickness | 0.1–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–5 nm | — |
Thickness | 100–1000 Å | — |
Thickness | 0.5–4 µm | — |
Thickness | 1–1.5 µm | — |
Thickness | 1–2 nm | — |
Thickness | 0.001 cm | — |
gate dielectric
silicon substrate
Si
silicon nitride
Si₃N₄
aluminum oxide
Al₂O₃
aluminum nitride nucleation layer
AlN
two-dimensional electron gas channel
Thickness | 0.1–1 µm | — |
Thickness | 0.45–1 µm | — |
Thickness | 100000–1000000 nm | — |
Thickness | 10–3000 µm | — |
Thickness | 0.3–3 µm | — |
Thickness | 0.1–10 µm | — |
Thickness | 2–5 µm | — |
Thickness | 1–5 nm | — |
Thickness | 100–1000 Å | — |
Thickness | 0.5–4 µm | — |
Thickness | 1–1.5 µm | — |
Thickness | 1–2 nm | — |
Thickness | 0.001 cm | — |