Patent
US 9,653,649GALLIUM NITRIDE SUBSTRATES AND FUNCTIONAL DEVICES
Makoto Iwai
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,653,649Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the a maximum value of peak intensities of cathode luminescence in a measured visual field of 0.1mmx0.1mm is 140 percent or higher of an average value of said peak intensities of said cathode luminescence, provided that said peak intensities of said cathode luminescence are of a wavelength corresponding to a band gap of gallium nitride and are measured on a surface of said gallium nitride substrate.
The gallium nitride substrate of claim 1, comprising island-shaped regions distributed on said surface of said gallium nitride substrate, wherein the maximum value of said peak intensities of said cathode luminescence is 140 percent or higher of said average value of said peak intensities of said cathode luminescence in said island-shaped region.
The gallium nitride substrate of claim 1, provided that photoluminescence peak intensities of said wavelength corresponding to said band gap of gallium nitride are measured in each of measurement regions each having a shape of a square of l mmx 1 mm in a measurement range on said surface of said gallium nitride substrate, and provided U.S. PATENT APPLICATION No.: 14/923,598 Attorney Docket No.: 1027-0101 Page 3 that said measurement regions are continuous in said measurement range without intervening spaces, wherein the a minimum value and maximum value of said photoluminescence peak intensities in said measurement region are 60 percent or lower and 120 percent or higher of an average value of said photoluminescence peak intensities in said measurement region, respectively.
A functional device comprising said gallium nitride substrate of claim 1 and a functional layer formed on said surface of said gallium nitride substrate and comprising a nitride of a group 13 element.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
functional device
Materials described outside the worked examples.
gallium nitride
GaN
nitride of a group 13 element
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1027-0101 Pa | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,653,649Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the a maximum value of peak intensities of cathode luminescence in a measured visual field of 0.1mmx0.1mm is 140 percent or higher of an average value of said peak intensities of said cathode luminescence, provided that said peak intensities of said cathode luminescence are of a wavelength corresponding to a band gap of gallium nitride and are measured on a surface of said gallium nitride substrate.
The gallium nitride substrate of claim 1, comprising island-shaped regions distributed on said surface of said gallium nitride substrate, wherein the maximum value of said peak intensities of said cathode luminescence is 140 percent or higher of said average value of said peak intensities of said cathode luminescence in said island-shaped region.
The gallium nitride substrate of claim 1, provided that photoluminescence peak intensities of said wavelength corresponding to said band gap of gallium nitride are measured in each of measurement regions each having a shape of a square of l mmx 1 mm in a measurement range on said surface of said gallium nitride substrate, and provided U.S. PATENT APPLICATION No.: 14/923,598 Attorney Docket No.: 1027-0101 Page 3 that said measurement regions are continuous in said measurement range without intervening spaces, wherein the a minimum value and maximum value of said photoluminescence peak intensities in said measurement region are 60 percent or lower and 120 percent or higher of an average value of said photoluminescence peak intensities in said measurement region, respectively.
A functional device comprising said gallium nitride substrate of claim 1 and a functional layer formed on said surface of said gallium nitride substrate and comprising a nitride of a group 13 element.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
functional device
Materials described outside the worked examples.
gallium nitride
GaN
nitride of a group 13 element
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1027-0101 Pa | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,653,649Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the a maximum value of peak intensities of cathode luminescence in a measured visual field of 0.1mmx0.1mm is 140 percent or higher of an average value of said peak intensities of said cathode luminescence, provided that said peak intensities of said cathode luminescence are of a wavelength corresponding to a band gap of gallium nitride and are measured on a surface of said gallium nitride substrate.
The gallium nitride substrate of claim 1, comprising island-shaped regions distributed on said surface of said gallium nitride substrate, wherein the maximum value of said peak intensities of said cathode luminescence is 140 percent or higher of said average value of said peak intensities of said cathode luminescence in said island-shaped region.
The gallium nitride substrate of claim 1, provided that photoluminescence peak intensities of said wavelength corresponding to said band gap of gallium nitride are measured in each of measurement regions each having a shape of a square of l mmx 1 mm in a measurement range on said surface of said gallium nitride substrate, and provided U.S. PATENT APPLICATION No.: 14/923,598 Attorney Docket No.: 1027-0101 Page 3 that said measurement regions are continuous in said measurement range without intervening spaces, wherein the a minimum value and maximum value of said photoluminescence peak intensities in said measurement region are 60 percent or lower and 120 percent or higher of an average value of said photoluminescence peak intensities in said measurement region, respectively.
A functional device comprising said gallium nitride substrate of claim 1 and a functional layer formed on said surface of said gallium nitride substrate and comprising a nitride of a group 13 element.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
functional device
Materials described outside the worked examples.
gallium nitride
GaN
nitride of a group 13 element
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1027-0101 Pa | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,653,649Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate, wherein the a maximum value of peak intensities of cathode luminescence in a measured visual field of 0.1mmx0.1mm is 140 percent or higher of an average value of said peak intensities of said cathode luminescence, provided that said peak intensities of said cathode luminescence are of a wavelength corresponding to a band gap of gallium nitride and are measured on a surface of said gallium nitride substrate.
The gallium nitride substrate of claim 1, comprising island-shaped regions distributed on said surface of said gallium nitride substrate, wherein the maximum value of said peak intensities of said cathode luminescence is 140 percent or higher of said average value of said peak intensities of said cathode luminescence in said island-shaped region.
The gallium nitride substrate of claim 1, provided that photoluminescence peak intensities of said wavelength corresponding to said band gap of gallium nitride are measured in each of measurement regions each having a shape of a square of l mmx 1 mm in a measurement range on said surface of said gallium nitride substrate, and provided U.S. PATENT APPLICATION No.: 14/923,598 Attorney Docket No.: 1027-0101 Page 3 that said measurement regions are continuous in said measurement range without intervening spaces, wherein the a minimum value and maximum value of said photoluminescence peak intensities in said measurement region are 60 percent or lower and 120 percent or higher of an average value of said photoluminescence peak intensities in said measurement region, respectively.
A functional device comprising said gallium nitride substrate of claim 1 and a functional layer formed on said surface of said gallium nitride substrate and comprising a nitride of a group 13 element.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
functional device
Materials described outside the worked examples.
gallium nitride
GaN
nitride of a group 13 element
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 1027-0101 Pa | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT