GAN SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING GAN SINGLE CRYSTAL

Yuichi Oshima

Patent

Atlas literature

Patent

US 8,101,939

GAN SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING GAN SINGLE CRYSTAL

Yuichi Oshima, Masatomo Shibata

2012-01-24·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 5 dependent

1
IndependentGaNGaN single-crystal substrate
A GaN single-crystal substrate, co m prising: a substrate surface comprising a frontside and a backside; and polarity inversion zones extending from the frontside to the backside, wherein the polarity inversion zones are formed in line shapes and a re concentrated in a speciﬁed position [[,]} wherein t o exist in the subst r ate surface, and the polarity inversion zones h ave a number density of the polarity inversion zones in the substrate surface within a range of [[isil not more than 20 cm 2, and wherein a maximum outside diameter of the polarity inversion zones is not more than 1 mm.
1. 10
  Dependent← claim 1GaNGaN single-crystal substrate
  The G aN single-crystal substrate according to claim 1, wherein a ratio of a sum of respective areas of the polarity inversion zones to a total area of the substrate surface is equal to or less than 2 %.
2
Independent
(Cancelled.) canceled
3
IndependentGaN
(Withdrawn-Previously Presented) A G aN single crystal p r oduction method, comprising: introducing group I II and V raw material gases on a substrate; and growing a GaN single crystal on the substrate, wherein the growing is performed at a growth temperature within a range of not less than 1 100 * C and not more than 1400 *C, wherein a group V to III raw material gas partial pressure ratio (V/Ill ratio) is within a range of not less than 0.4 and not more than 1, wherein a number density of polarity inversion zones in a surface of the substrate is not less than 1 cm 2 and not more than 20 cm', and wherein a maximum outside diameter of the polarity inversion zones is not m o re than 1 mm. withdrawn
1. 4
  Dependent← claim 3GaNHCl
  The GaN single crystal production method according to claim 3, wherein the growing comprises adding hydrogen chloride (HCl) gas with a partial pressure in a range from 0.01% to 0. 1%. withdrawn
2. 5
  Dependent← claim 3GaN
  5. The G aN single crystal production method according to claim 3, further c omprising: forming a seed crystal layer on the substrate; and forming a mask on the seed crystal layer, wherein the growing comprises growing a G aN single crystal on the seed crystal layer formed with the mask. withdrawn
3. 9
  Dependent← claim 3GaNHCl
  The GaN single crystal production method according to claim 3, wherein the growing comprises: interrupting growth of the G aN single crystal; during the growth interrupting, adding hydrogen chloride gas with a partial pressure within a range of 0.001% to 0.05%, and heating the G aN single crystal within a temperature range of 700 * C to 900 0 C; and after the heating, resuming growth of the G aN single crystal. withdrawn
7
Independent
7-8. (Cancelled.) canceled
8
Independent
canceled
71
Independent
Serial No. 12 1 010,888 Docket No. PHC F -071.47 EI R.309

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN single-crystal substrate

GaNsubstrate

Materials

Materials described outside the worked examples.

GaN single crystal

GaN

Substrate Crystal

hydrogen chloride gas

HCl

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≤ 1 cm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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