Patent
Atlas literature
Patent
US 12,290,899 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method of manufac- turing a gallium nitride single-crystal substrate according to an embodiment of the present disclosure.
FIGS. 2A to 2C illustrate a polar plane, a semipolar plane, and a nonpolar plane of a gallium nitride single crystal. 65 In a gallium nitride single crystal, a …
FIGS. 3A to 3D are schematic views illustrating a surface grinding step for the gallium nitride single crystal.
FIG. 4A is a plan view generally illustrating a positional relationship between a single-crystal holder and a grindstone 15 holder having a wheel shape in the …
FIG. 5 is an explanatory view illustrating an example of an attached state of a plurality of gallium nitride single crystals. 20
FIG. 6 is a schematic view for explaining the determina- tion of a range to be ground in the surface grinding step.
FIG. 7 is an explanatory view illustrating ranges A to F to be ground in the surface grinding step.
FIG. 8A is a photomicrograph of a substrate surface 25 ground in the range A.
FIG. 9 is an explanatory view illustrating another attached state of a plurality of gallium nitride single crystals.
FIG. 10 is an explanatory view illustrating ranges G to J to be ground in the surface grinding step. 40
FIG. 35 7. Each range is represented by an angle formed by the direction M and the direction R1. The direction M is obtained by projecting the [000-1] …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a semipolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and B₂ pressing the gallium nitride single crystal and the grindstone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the main surface is ground to make an angle formed by a direction in which the grindstone grinds the main surface and a direction obtained by projecting a c-axis of the gallium nitride single crystal onto the main surface, to be within at least one range selected from the group consisting of ranges A, C, and E, where range A is −45° or more and 45° or less, range C is 55° or more and 135° or less, range E is −135° or more and −55° or less, where the angle is formed by a direction in which the grindstone grinds the main surface, and a direction obtained by projecting a [0001] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [000-1] direction side, and an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the gallium nitride single crystal is held and ground to make the angle be within the range A.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein an orienta-tion of the main surface is inclined at more than 0° and 45° or less from a nonpolar plane toward a c-plane.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the grind-stone has a rectangular shape, and the grindstone comprises a plurality of grindstones arranged in a circumferential direction of the grindstone holder.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein abrasive grains of the grindstone have a grit from #1000 to #5000.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein a surface of the single-crystal holder to which the gallium nitride single crystal is fixed is inclined with a center portion as a vertex.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.2 µm or more.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a single crystal of a nitride of an element of group 13 in the periodic table, the single crystal having a semipolar plane or a nonpolar plane as a main surface, such that the main surface of the single crystal faces a surface of a grindstone; and pressing the main surface of the single crystal and the surface of the grindstone against each other while reciprocating the single crystal and the grindstone relative to each other in a direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.1 µm or more.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the single-crystal substrate is a gallium nitride single-crystal substrate, the direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface is a direction connecting range C and range E, an angle formed by the range C with the direction obtained by projecting the [000-1] direction is 55° to 135°, and an angle formed by the range E with the direction obtained by projecting the [000-1] direction is −135° to −55°.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a surface of a grindstone and a single crystal of a nitride of an element of group 13 in the periodic table having a semipolar plane as a main surface to face each other; pressing the surface of the grindstone and the main surface of the single crystal against each other while moving the grindstone in a direction substantially iden-tical to a direction obtained by projecting a [0001] direction of the single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or in a direction substantially identical to a direc-tion obtained by projecting a [000-1] direction of the single crystal onto the main surface when the main surface is a surface on a [000-1] direction side to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a nonpolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and pressing the gallium nitride single crystal and the grind-stone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the gallium nitride single crystal is held and ground to make a direction in which the grindstone grinds the main surface to be within one or both of ranges G and I below, or within one or both of ranges H and J, where range G is −45° or more and 45° or less, range H is more than 45° and less than 135°, range I is 135° or more and 180° or less and −180° or more and −135° or less, and range J is more than −135° and less than −45°, and where the angle is formed by a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface, and a direction in which the grindstone grinds the main surface; an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride single crystal
GaN
nitride of an element of group 13 in the periodic table single crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic average height Sa of ground main surface (semipolar GaN, claim 7) | ≥ 0.2 µm | GaN |
arithmetic average height Sa of ground main surface (group 13 nitride, claim 9) | ≥ 0.1 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 17
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 12,290,899 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method of manufac- turing a gallium nitride single-crystal substrate according to an embodiment of the present disclosure.
FIGS. 2A to 2C illustrate a polar plane, a semipolar plane, and a nonpolar plane of a gallium nitride single crystal. 65 In a gallium nitride single crystal, a …
FIGS. 3A to 3D are schematic views illustrating a surface grinding step for the gallium nitride single crystal.
FIG. 4A is a plan view generally illustrating a positional relationship between a single-crystal holder and a grindstone 15 holder having a wheel shape in the …
FIG. 5 is an explanatory view illustrating an example of an attached state of a plurality of gallium nitride single crystals. 20
FIG. 6 is a schematic view for explaining the determina- tion of a range to be ground in the surface grinding step.
FIG. 7 is an explanatory view illustrating ranges A to F to be ground in the surface grinding step.
FIG. 8A is a photomicrograph of a substrate surface 25 ground in the range A.
FIG. 9 is an explanatory view illustrating another attached state of a plurality of gallium nitride single crystals.
FIG. 10 is an explanatory view illustrating ranges G to J to be ground in the surface grinding step. 40
FIG. 35 7. Each range is represented by an angle formed by the direction M and the direction R1. The direction M is obtained by projecting the [000-1] …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a semipolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and B₂ pressing the gallium nitride single crystal and the grindstone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the main surface is ground to make an angle formed by a direction in which the grindstone grinds the main surface and a direction obtained by projecting a c-axis of the gallium nitride single crystal onto the main surface, to be within at least one range selected from the group consisting of ranges A, C, and E, where range A is −45° or more and 45° or less, range C is 55° or more and 135° or less, range E is −135° or more and −55° or less, where the angle is formed by a direction in which the grindstone grinds the main surface, and a direction obtained by projecting a [0001] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [000-1] direction side, and an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the gallium nitride single crystal is held and ground to make the angle be within the range A.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein an orienta-tion of the main surface is inclined at more than 0° and 45° or less from a nonpolar plane toward a c-plane.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the grind-stone has a rectangular shape, and the grindstone comprises a plurality of grindstones arranged in a circumferential direction of the grindstone holder.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein abrasive grains of the grindstone have a grit from #1000 to #5000.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein a surface of the single-crystal holder to which the gallium nitride single crystal is fixed is inclined with a center portion as a vertex.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.2 µm or more.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a single crystal of a nitride of an element of group 13 in the periodic table, the single crystal having a semipolar plane or a nonpolar plane as a main surface, such that the main surface of the single crystal faces a surface of a grindstone; and pressing the main surface of the single crystal and the surface of the grindstone against each other while reciprocating the single crystal and the grindstone relative to each other in a direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.1 µm or more.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the single-crystal substrate is a gallium nitride single-crystal substrate, the direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface is a direction connecting range C and range E, an angle formed by the range C with the direction obtained by projecting the [000-1] direction is 55° to 135°, and an angle formed by the range E with the direction obtained by projecting the [000-1] direction is −135° to −55°.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a surface of a grindstone and a single crystal of a nitride of an element of group 13 in the periodic table having a semipolar plane as a main surface to face each other; pressing the surface of the grindstone and the main surface of the single crystal against each other while moving the grindstone in a direction substantially iden-tical to a direction obtained by projecting a [0001] direction of the single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or in a direction substantially identical to a direc-tion obtained by projecting a [000-1] direction of the single crystal onto the main surface when the main surface is a surface on a [000-1] direction side to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a nonpolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and pressing the gallium nitride single crystal and the grind-stone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the gallium nitride single crystal is held and ground to make a direction in which the grindstone grinds the main surface to be within one or both of ranges G and I below, or within one or both of ranges H and J, where range G is −45° or more and 45° or less, range H is more than 45° and less than 135°, range I is 135° or more and 180° or less and −180° or more and −135° or less, and range J is more than −135° and less than −45°, and where the angle is formed by a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface, and a direction in which the grindstone grinds the main surface; an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride single crystal
GaN
nitride of an element of group 13 in the periodic table single crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic average height Sa of ground main surface (semipolar GaN, claim 7) | ≥ 0.2 µm | GaN |
arithmetic average height Sa of ground main surface (group 13 nitride, claim 9) | ≥ 0.1 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 17
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 12,290,899 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method of manufac- turing a gallium nitride single-crystal substrate according to an embodiment of the present disclosure.
FIGS. 2A to 2C illustrate a polar plane, a semipolar plane, and a nonpolar plane of a gallium nitride single crystal. 65 In a gallium nitride single crystal, a …
FIGS. 3A to 3D are schematic views illustrating a surface grinding step for the gallium nitride single crystal.
FIG. 4A is a plan view generally illustrating a positional relationship between a single-crystal holder and a grindstone 15 holder having a wheel shape in the …
FIG. 5 is an explanatory view illustrating an example of an attached state of a plurality of gallium nitride single crystals. 20
FIG. 6 is a schematic view for explaining the determina- tion of a range to be ground in the surface grinding step.
FIG. 7 is an explanatory view illustrating ranges A to F to be ground in the surface grinding step.
FIG. 8A is a photomicrograph of a substrate surface 25 ground in the range A.
FIG. 9 is an explanatory view illustrating another attached state of a plurality of gallium nitride single crystals.
FIG. 10 is an explanatory view illustrating ranges G to J to be ground in the surface grinding step. 40
FIG. 35 7. Each range is represented by an angle formed by the direction M and the direction R1. The direction M is obtained by projecting the [000-1] …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a semipolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and B₂ pressing the gallium nitride single crystal and the grindstone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the main surface is ground to make an angle formed by a direction in which the grindstone grinds the main surface and a direction obtained by projecting a c-axis of the gallium nitride single crystal onto the main surface, to be within at least one range selected from the group consisting of ranges A, C, and E, where range A is −45° or more and 45° or less, range C is 55° or more and 135° or less, range E is −135° or more and −55° or less, where the angle is formed by a direction in which the grindstone grinds the main surface, and a direction obtained by projecting a [0001] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [000-1] direction side, and an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the gallium nitride single crystal is held and ground to make the angle be within the range A.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein an orienta-tion of the main surface is inclined at more than 0° and 45° or less from a nonpolar plane toward a c-plane.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the grind-stone has a rectangular shape, and the grindstone comprises a plurality of grindstones arranged in a circumferential direction of the grindstone holder.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein abrasive grains of the grindstone have a grit from #1000 to #5000.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein a surface of the single-crystal holder to which the gallium nitride single crystal is fixed is inclined with a center portion as a vertex.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.2 µm or more.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a single crystal of a nitride of an element of group 13 in the periodic table, the single crystal having a semipolar plane or a nonpolar plane as a main surface, such that the main surface of the single crystal faces a surface of a grindstone; and pressing the main surface of the single crystal and the surface of the grindstone against each other while reciprocating the single crystal and the grindstone relative to each other in a direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.1 µm or more.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the single-crystal substrate is a gallium nitride single-crystal substrate, the direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface is a direction connecting range C and range E, an angle formed by the range C with the direction obtained by projecting the [000-1] direction is 55° to 135°, and an angle formed by the range E with the direction obtained by projecting the [000-1] direction is −135° to −55°.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a surface of a grindstone and a single crystal of a nitride of an element of group 13 in the periodic table having a semipolar plane as a main surface to face each other; pressing the surface of the grindstone and the main surface of the single crystal against each other while moving the grindstone in a direction substantially iden-tical to a direction obtained by projecting a [0001] direction of the single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or in a direction substantially identical to a direc-tion obtained by projecting a [000-1] direction of the single crystal onto the main surface when the main surface is a surface on a [000-1] direction side to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a nonpolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and pressing the gallium nitride single crystal and the grind-stone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the gallium nitride single crystal is held and ground to make a direction in which the grindstone grinds the main surface to be within one or both of ranges G and I below, or within one or both of ranges H and J, where range G is −45° or more and 45° or less, range H is more than 45° and less than 135°, range I is 135° or more and 180° or less and −180° or more and −135° or less, and range J is more than −135° and less than −45°, and where the angle is formed by a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface, and a direction in which the grindstone grinds the main surface; an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride single crystal
GaN
nitride of an element of group 13 in the periodic table single crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic average height Sa of ground main surface (semipolar GaN, claim 7) | ≥ 0.2 µm | GaN |
arithmetic average height Sa of ground main surface (group 13 nitride, claim 9) | ≥ 0.1 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 17
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 12,290,899 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method of manufac- turing a gallium nitride single-crystal substrate according to an embodiment of the present disclosure.
FIGS. 2A to 2C illustrate a polar plane, a semipolar plane, and a nonpolar plane of a gallium nitride single crystal. 65 In a gallium nitride single crystal, a …
FIGS. 3A to 3D are schematic views illustrating a surface grinding step for the gallium nitride single crystal.
FIG. 4A is a plan view generally illustrating a positional relationship between a single-crystal holder and a grindstone 15 holder having a wheel shape in the …
FIG. 5 is an explanatory view illustrating an example of an attached state of a plurality of gallium nitride single crystals. 20
FIG. 6 is a schematic view for explaining the determina- tion of a range to be ground in the surface grinding step.
FIG. 7 is an explanatory view illustrating ranges A to F to be ground in the surface grinding step.
FIG. 8A is a photomicrograph of a substrate surface 25 ground in the range A.
FIG. 9 is an explanatory view illustrating another attached state of a plurality of gallium nitride single crystals.
FIG. 10 is an explanatory view illustrating ranges G to J to be ground in the surface grinding step. 40
FIG. 35 7. Each range is represented by an angle formed by the direction M and the direction R1. The direction M is obtained by projecting the [000-1] …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a semipolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and B₂ pressing the gallium nitride single crystal and the grindstone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the main surface is ground to make an angle formed by a direction in which the grindstone grinds the main surface and a direction obtained by projecting a c-axis of the gallium nitride single crystal onto the main surface, to be within at least one range selected from the group consisting of ranges A, C, and E, where range A is −45° or more and 45° or less, range C is 55° or more and 135° or less, range E is −135° or more and −55° or less, where the angle is formed by a direction in which the grindstone grinds the main surface, and a direction obtained by projecting a [0001] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface when the main surface is a surface on a [000-1] direction side, and an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the gallium nitride single crystal is held and ground to make the angle be within the range A.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein an orienta-tion of the main surface is inclined at more than 0° and 45° or less from a nonpolar plane toward a c-plane.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the grind-stone has a rectangular shape, and the grindstone comprises a plurality of grindstones arranged in a circumferential direction of the grindstone holder.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein abrasive grains of the grindstone have a grit from #1000 to #5000.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein a surface of the single-crystal holder to which the gallium nitride single crystal is fixed is inclined with a center portion as a vertex.
The method of manufacturing a gallium nitride single-crystal substrate according to claim 1, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.2 µm or more.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a single crystal of a nitride of an element of group 13 in the periodic table, the single crystal having a semipolar plane or a nonpolar plane as a main surface, such that the main surface of the single crystal faces a surface of a grindstone; and pressing the main surface of the single crystal and the surface of the grindstone against each other while reciprocating the single crystal and the grindstone relative to each other in a direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the main surface of the single crystal ground by the grindstone within the range has an arithmetic average height (Sa) of 0.1 µm or more.
The method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table according to claim 8, wherein the single-crystal substrate is a gallium nitride single-crystal substrate, the direction substantially orthogonal to a direction obtained by projecting a [000-1] direction of the single crystal onto the main surface is a direction connecting range C and range E, an angle formed by the range C with the direction obtained by projecting the [000-1] direction is 55° to 135°, and an angle formed by the range E with the direction obtained by projecting the [000-1] direction is −135° to −55°.
A method of manufacturing a single-crystal substrate of a nitride of an element of group 13 in the periodic table, comprising: arranging a surface of a grindstone and a single crystal of a nitride of an element of group 13 in the periodic table having a semipolar plane as a main surface to face each other; pressing the surface of the grindstone and the main surface of the single crystal against each other while moving the grindstone in a direction substantially iden-tical to a direction obtained by projecting a [0001] direction of the single crystal onto the main surface when the main surface is a surface on a [0001] direction side, or in a direction substantially identical to a direc-tion obtained by projecting a [000-1] direction of the single crystal onto the main surface when the main surface is a surface on a [000-1] direction side to grind the single crystal such that the main surface after grinding is parallel to the main surface before grinding.
A method of manufacturing a gallium nitride single-crystal substrate, the method comprising: grinding a main surface by arranging a single-crystal holder holding a gallium nitride single crystal having a nonpolar plane as the main surface and a grindstone holder holding a grindstone to face each other, and pressing the gallium nitride single crystal and the grind-stone against each other while rotating one or both of the gallium nitride single crystal and the grindstone, wherein the gallium nitride single crystal is held and ground to make a direction in which the grindstone grinds the main surface to be within one or both of ranges G and I below, or within one or both of ranges H and J, where range G is −45° or more and 45° or less, range H is more than 45° and less than 135°, range I is 135° or more and 180° or less and −180° or more and −135° or less, and range J is more than −135° and less than −45°, and where the angle is formed by a direction obtained by projecting a [000-1] direction of the gallium nitride single crystal onto the main surface, and a direction in which the grindstone grinds the main surface; an upstream side of the substrate in a rotation direction is from 0° to 180°; and a downstream side is from 0° to −180°. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride single crystal
GaN
nitride of an element of group 13 in the periodic table single crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
arithmetic average height Sa of ground main surface (semipolar GaN, claim 7) | ≥ 0.2 µm | GaN |
arithmetic average height Sa of ground main surface (group 13 nitride, claim 9) | ≥ 0.1 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 17
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