Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
FIG. 7 is a top view of a wafer and dies that may be included in a microelectronic assembly, in accordance with any of the embodiments disclosed herein. 45
FIG. 8 is a cross-sectional side view of an integrated circuit device that may be included in a microelectronic assembly, in accordance with any of the …
FIG. 9 is a cross-sectional side view of an integrated 50 circuit device assembly that may include a microelectronic assembly, in accordance with any of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a plurality of p-type doped layers on the one or more polarization layers, each of the plurality of p-type doped layers comprising a first p-type dopant and the third III-N material, wherein each successive layer of the first p-type doped layers has a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it; a p-type doped layer on the plurality of p-type doped layers comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 1, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having 20 a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 1, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the 30 second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the plurality of p-type doped layers comprise: a first p-type doped layer on the second polarization layer, wherein the first group III constituent of the first p-type doped layer is in a third proportion to the second group III constituent of the first p-type doped layer; a second p-type doped layer on the first p-type doped layer, wherein the first group III constituent of the second p-type doped layer is in a fourth proportion to the second group III constituent of the second p-type doped layer; the fourth proportion is lower than the third proportion; the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 1, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 1, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 1, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 1, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 1, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 1, wherein the source region and the drain region each comprise a fifth III-N material com-prising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a first p-type doped layer on the one or more polarization layers, the first p-type doped layer comprising a first p-type dopant and the third III-N material, wherein a proportion of the first group III constituent to the second group III constituent is a gradient; a second p-type doped layer on the first p-type doped layer, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 10, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 10, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the first p-type layer is on the second polarization layer, and the proportion of the first group III constituent to the second group III constituent in the first p-type doped layer is at a third proportion adjacent the second polarization layer and at a fourth proportion adjacent the second p-type doped layer; the fourth proportion is lower than the third proportion the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 10, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 10, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 10, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 10, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 10, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 10, wherein the source region and the drain region each comprise a fifth III-N material comprising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a 5 second group III constituent; one or more first p-type doped layers on the one or more polarization layers comprising a first p-type dopant and the third III-N material; a second p-type doped layer on the one or more first p-type doped layers, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; wherein the one or more first p-type doped layers com-prise a first proportion of the first group III constituent to the second group III constituent in a region adjacent to the one or more polarization layers and a second proportion of the first group III constituent to the second group III constituent in a region adjacent to the second p-type doped layer, the second proportion lower than the first proportion; a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a plurality of layers, each successive layer comprising a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a gradient of the propor-tion of the first group III constituent to the second group III constituent.
The apparatus of claim 19, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 19, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 19, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 19, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with stepwise graded p-AlGaN gate (claim 1)
GaN-based HEMT with continuously graded p-AlGaN gate (claim 10)
GaN-based HEMT with graded p-type doped layers (claim 19)
GaN HEMT device 100 with graded gate structure
Materials described outside the worked examples.
AlGaN buffer layer (first III-N material)
AlGaN
GaN channel layer (second III-N material)
GaN
AlGaN polarization/p-type graded layer (third III-N material)
AlxGa₁-xN
p-GaN or p-AlN top p-type layer (fourth III-N material)
InGaN source/drain (fifth III-N material)
InxGa₁-xN
InAlN (alternative third III-N material)
InxAl₁-xN
AlN (alternative fourth III-N material)
AlN
Magnesium p-type dopant
Mg
Beryllium p-type dopant
Be
graded p-AlGaN layers
AlxGa₁-xN:Mg
p-GaN gate layer
GaN:Mg
SiO₂ or SiN passivation layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 3–25 nm | — |
Thickness | 9–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 5–20 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 4
Related documents with shared materials, methods, properties, or citations.
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
FIG. 7 is a top view of a wafer and dies that may be included in a microelectronic assembly, in accordance with any of the embodiments disclosed herein. 45
FIG. 8 is a cross-sectional side view of an integrated circuit device that may be included in a microelectronic assembly, in accordance with any of the …
FIG. 9 is a cross-sectional side view of an integrated 50 circuit device assembly that may include a microelectronic assembly, in accordance with any of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a plurality of p-type doped layers on the one or more polarization layers, each of the plurality of p-type doped layers comprising a first p-type dopant and the third III-N material, wherein each successive layer of the first p-type doped layers has a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it; a p-type doped layer on the plurality of p-type doped layers comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 1, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having 20 a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 1, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the 30 second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the plurality of p-type doped layers comprise: a first p-type doped layer on the second polarization layer, wherein the first group III constituent of the first p-type doped layer is in a third proportion to the second group III constituent of the first p-type doped layer; a second p-type doped layer on the first p-type doped layer, wherein the first group III constituent of the second p-type doped layer is in a fourth proportion to the second group III constituent of the second p-type doped layer; the fourth proportion is lower than the third proportion; the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 1, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 1, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 1, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 1, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 1, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 1, wherein the source region and the drain region each comprise a fifth III-N material com-prising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a first p-type doped layer on the one or more polarization layers, the first p-type doped layer comprising a first p-type dopant and the third III-N material, wherein a proportion of the first group III constituent to the second group III constituent is a gradient; a second p-type doped layer on the first p-type doped layer, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 10, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 10, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the first p-type layer is on the second polarization layer, and the proportion of the first group III constituent to the second group III constituent in the first p-type doped layer is at a third proportion adjacent the second polarization layer and at a fourth proportion adjacent the second p-type doped layer; the fourth proportion is lower than the third proportion the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 10, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 10, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 10, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 10, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 10, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 10, wherein the source region and the drain region each comprise a fifth III-N material comprising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a 5 second group III constituent; one or more first p-type doped layers on the one or more polarization layers comprising a first p-type dopant and the third III-N material; a second p-type doped layer on the one or more first p-type doped layers, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; wherein the one or more first p-type doped layers com-prise a first proportion of the first group III constituent to the second group III constituent in a region adjacent to the one or more polarization layers and a second proportion of the first group III constituent to the second group III constituent in a region adjacent to the second p-type doped layer, the second proportion lower than the first proportion; a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a plurality of layers, each successive layer comprising a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a gradient of the propor-tion of the first group III constituent to the second group III constituent.
The apparatus of claim 19, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 19, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 19, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 19, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with stepwise graded p-AlGaN gate (claim 1)
GaN-based HEMT with continuously graded p-AlGaN gate (claim 10)
GaN-based HEMT with graded p-type doped layers (claim 19)
GaN HEMT device 100 with graded gate structure
Materials described outside the worked examples.
AlGaN buffer layer (first III-N material)
AlGaN
GaN channel layer (second III-N material)
GaN
AlGaN polarization/p-type graded layer (third III-N material)
AlxGa₁-xN
p-GaN or p-AlN top p-type layer (fourth III-N material)
InGaN source/drain (fifth III-N material)
InxGa₁-xN
InAlN (alternative third III-N material)
InxAl₁-xN
AlN (alternative fourth III-N material)
AlN
Magnesium p-type dopant
Mg
Beryllium p-type dopant
Be
graded p-AlGaN layers
AlxGa₁-xN:Mg
p-GaN gate layer
GaN:Mg
SiO₂ or SiN passivation layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 3–25 nm | — |
Thickness | 9–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 5–20 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 4
Related documents with shared materials, methods, properties, or citations.
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
Apparatus and Method of Fabrication for GaN/Si Transistors Isolation
GALLIUM NITRIDE TRANSISTORS FOR HIGH-VOLTAGE RADIO FREQUENCY SWITCHES
CMOS CIRCUITS USING N-CHANNEL AND P-CHANNEL GALLIUM NITRIDE TRANSISTORS
N-CHANNEL GALLIUM NITRIDE TRANSISTORS
ENHANCEMENT MODE GALLIUM NITRIDE BASED TRANSISTOR DEVICE HAVING A P TYPE METAL OXIDE LAYER COMPRISING PLURALITY OF EXTENSION PARTS EXTENDING INTO THE EPITAXIAL STACKED LAYER
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
FIG. 7 is a top view of a wafer and dies that may be included in a microelectronic assembly, in accordance with any of the embodiments disclosed herein. 45
FIG. 8 is a cross-sectional side view of an integrated circuit device that may be included in a microelectronic assembly, in accordance with any of the …
FIG. 9 is a cross-sectional side view of an integrated 50 circuit device assembly that may include a microelectronic assembly, in accordance with any of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a plurality of p-type doped layers on the one or more polarization layers, each of the plurality of p-type doped layers comprising a first p-type dopant and the third III-N material, wherein each successive layer of the first p-type doped layers has a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it; a p-type doped layer on the plurality of p-type doped layers comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 1, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having 20 a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 1, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the 30 second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the plurality of p-type doped layers comprise: a first p-type doped layer on the second polarization layer, wherein the first group III constituent of the first p-type doped layer is in a third proportion to the second group III constituent of the first p-type doped layer; a second p-type doped layer on the first p-type doped layer, wherein the first group III constituent of the second p-type doped layer is in a fourth proportion to the second group III constituent of the second p-type doped layer; the fourth proportion is lower than the third proportion; the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 1, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 1, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 1, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 1, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 1, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 1, wherein the source region and the drain region each comprise a fifth III-N material com-prising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a first p-type doped layer on the one or more polarization layers, the first p-type doped layer comprising a first p-type dopant and the third III-N material, wherein a proportion of the first group III constituent to the second group III constituent is a gradient; a second p-type doped layer on the first p-type doped layer, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 10, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 10, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the first p-type layer is on the second polarization layer, and the proportion of the first group III constituent to the second group III constituent in the first p-type doped layer is at a third proportion adjacent the second polarization layer and at a fourth proportion adjacent the second p-type doped layer; the fourth proportion is lower than the third proportion the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 10, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 10, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 10, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 10, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 10, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 10, wherein the source region and the drain region each comprise a fifth III-N material comprising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a 5 second group III constituent; one or more first p-type doped layers on the one or more polarization layers comprising a first p-type dopant and the third III-N material; a second p-type doped layer on the one or more first p-type doped layers, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; wherein the one or more first p-type doped layers com-prise a first proportion of the first group III constituent to the second group III constituent in a region adjacent to the one or more polarization layers and a second proportion of the first group III constituent to the second group III constituent in a region adjacent to the second p-type doped layer, the second proportion lower than the first proportion; a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a plurality of layers, each successive layer comprising a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a gradient of the propor-tion of the first group III constituent to the second group III constituent.
The apparatus of claim 19, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 19, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 19, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 19, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with stepwise graded p-AlGaN gate (claim 1)
GaN-based HEMT with continuously graded p-AlGaN gate (claim 10)
GaN-based HEMT with graded p-type doped layers (claim 19)
GaN HEMT device 100 with graded gate structure
Materials described outside the worked examples.
AlGaN buffer layer (first III-N material)
AlGaN
GaN channel layer (second III-N material)
GaN
AlGaN polarization/p-type graded layer (third III-N material)
AlxGa₁-xN
p-GaN or p-AlN top p-type layer (fourth III-N material)
InGaN source/drain (fifth III-N material)
InxGa₁-xN
InAlN (alternative third III-N material)
InxAl₁-xN
AlN (alternative fourth III-N material)
AlN
Magnesium p-type dopant
Mg
Beryllium p-type dopant
Be
graded p-AlGaN layers
AlxGa₁-xN:Mg
p-GaN gate layer
GaN:Mg
SiO₂ or SiN passivation layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 3–25 nm | — |
Thickness | 9–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 5–20 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 4
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
FIG. 7 is a top view of a wafer and dies that may be included in a microelectronic assembly, in accordance with any of the embodiments disclosed herein. 45
FIG. 8 is a cross-sectional side view of an integrated circuit device that may be included in a microelectronic assembly, in accordance with any of the …
FIG. 9 is a cross-sectional side view of an integrated 50 circuit device assembly that may include a microelectronic assembly, in accordance with any of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a plurality of p-type doped layers on the one or more polarization layers, each of the plurality of p-type doped layers comprising a first p-type dopant and the third III-N material, wherein each successive layer of the first p-type doped layers has a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it; a p-type doped layer on the plurality of p-type doped layers comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 1, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having 20 a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 1, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the 30 second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the plurality of p-type doped layers comprise: a first p-type doped layer on the second polarization layer, wherein the first group III constituent of the first p-type doped layer is in a third proportion to the second group III constituent of the first p-type doped layer; a second p-type doped layer on the first p-type doped layer, wherein the first group III constituent of the second p-type doped layer is in a fourth proportion to the second group III constituent of the second p-type doped layer; the fourth proportion is lower than the third proportion; the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 1, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 1, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 1, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 1, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 1, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 1, wherein the source region and the drain region each comprise a fifth III-N material com-prising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a second group III constituent; a first p-type doped layer on the one or more polarization layers, the first p-type doped layer comprising a first p-type dopant and the third III-N material, wherein a proportion of the first group III constituent to the second group III constituent is a gradient; a second p-type doped layer on the first p-type doped layer, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; and a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 10, wherein the one or more polarization layers comprise a plurality of polarization lay-ers, each successive layer of the polarization layers having a lower proportion of the first group III constituent to the second group III constituent than a layer below it.
The apparatus of claim 10, wherein: the one or more polarization layers comprise: a first polarization layer on the channel layer, wherein the first group III constituent of the first polarization layer is in a first proportion to the second group III constituent of the first polarization layer; and a second polarization layer on the first polarization layer, wherein the first group III constituent of the second polarization layer is in a second proportion to the second group III constituent of the second polar-ization layer; the first p-type layer is on the second polarization layer, and the proportion of the first group III constituent to the second group III constituent in the first p-type doped layer is at a third proportion adjacent the second polarization layer and at a fourth proportion adjacent the second p-type doped layer; the fourth proportion is lower than the third proportion the third proportion is lower than the second proportion; and the second proportion is lower than the first proportion.
The apparatus of claim 10, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 10, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 10, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 10, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen.
The apparatus of claim 10, wherein the first p-type dopant comprises one or more of magnesium and beryllium and the second p-type dopant comprises one or more of magnesium and beryllium.
The apparatus of claim 10, wherein the source region and the drain region each comprise a fifth III-N material comprising indium, gallium, and nitrogen.
An apparatus comprising: a substrate; a buffer layer on the substrate, the buffer layer comprising a first group III-nitride (III-N) material; a channel layer on the buffer layer, the channel layer comprising a second III-N material; one or more polarization layers on the channel layer, the one or more polarization layers comprising a third III-N material comprising a first group III constituent and a 5 second group III constituent; one or more first p-type doped layers on the one or more polarization layers comprising a first p-type dopant and the third III-N material; a second p-type doped layer on the one or more first p-type doped layers, the second p-type doped layer comprising a second p-type dopant and a fourth III-N material; wherein the one or more first p-type doped layers com-prise a first proportion of the first group III constituent to the second group III constituent in a region adjacent to the one or more polarization layers and a second proportion of the first group III constituent to the second group III constituent in a region adjacent to the second p-type doped layer, the second proportion lower than the first proportion; a source region adjacent one end of the channel layer; and a drain region adjacent another end of the channel layer.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a plurality of layers, each successive layer comprising a lower proportion of the first group III constituent to the second group III constituent relative to a layer below it.
The apparatus of claim 19, wherein the one or more first p-type doped layers comprise a gradient of the propor-tion of the first group III constituent to the second group III constituent.
The apparatus of claim 19, wherein the first III-N material comprises aluminum, gallium, and nitrogen.
The apparatus of claim 19, wherein the second III-N material comprises gallium, and nitrogen.
The apparatus of claim 19, wherein the third III-N material comprises aluminum, gallium, and nitrogen or indium, aluminum, and nitrogen.
The apparatus of claim 19, wherein the fourth III-N material comprises gallium and nitrogen or aluminum and nitrogen. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with stepwise graded p-AlGaN gate (claim 1)
GaN-based HEMT with continuously graded p-AlGaN gate (claim 10)
GaN-based HEMT with graded p-type doped layers (claim 19)
GaN HEMT device 100 with graded gate structure
Materials described outside the worked examples.
AlGaN buffer layer (first III-N material)
AlGaN
GaN channel layer (second III-N material)
GaN
AlGaN polarization/p-type graded layer (third III-N material)
AlxGa₁-xN
p-GaN or p-AlN top p-type layer (fourth III-N material)
InGaN source/drain (fifth III-N material)
InxGa₁-xN
InAlN (alternative third III-N material)
InxAl₁-xN
AlN (alternative fourth III-N material)
AlN
Magnesium p-type dopant
Mg
Beryllium p-type dopant
Be
graded p-AlGaN layers
AlxGa₁-xN:Mg
p-GaN gate layer
GaN:Mg
SiO₂ or SiN passivation layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates an example GaN-based high-electron- mobility transistor (HEMT) device with a graded gate 20 structure in accordance with embodiments of the …
FIGS. 2A-2B illustrate example graded gate stack con- figurations for the GaN-based high-electron-mobility tran- sistor (HEMT) device 100 of
FIG. 3 illustrates a flow diagram of an example process for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a graded gate …
FIGS. 4A-4B illustrate an example GaN-based high- electron-mobility transistor (HEMT) device with a digital doped p-GaN gate structure in accordance with …
FIG. 5 illustrates a flow diagram of an example process 35 for fabricating a GaN-based high-electron-mobility transis- tor (HEMT) device with a digital doped …
FIG. 6 illustrates a block diagram of an example electrical 40 device that may include one or more embodiments of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 3–25 nm | — |
Thickness | 9–10 nm | — |
Thickness | 1–5 nm | — |
Thickness | 5–20 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 4
Related documents with shared materials, methods, properties, or citations.
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
Apparatus and Method of Fabrication for GaN/Si Transistors Isolation
GALLIUM NITRIDE TRANSISTORS FOR HIGH-VOLTAGE RADIO FREQUENCY SWITCHES
CMOS CIRCUITS USING N-CHANNEL AND P-CHANNEL GALLIUM NITRIDE TRANSISTORS
N-CHANNEL GALLIUM NITRIDE TRANSISTORS
ENHANCEMENT MODE GALLIUM NITRIDE BASED TRANSISTOR DEVICE HAVING A P TYPE METAL OXIDE LAYER COMPRISING PLURALITY OF EXTENSION PARTS EXTENDING INTO THE EPITAXIAL STACKED LAYER
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE AND METHOD OF MANUFACTURING THE SAME
GaN OVERVOLTAGE PROTECTION CIRCUIT
GALLIUM NITRIDE POWER DEVICES USING ISLAND TOPOGRAPHY
ALUMINUM-BASED GALLIUM NITRIDE INTEGRATED CIRCUITS
COMPOUND SEMICONDUCTOR DEVICE HAVING GALLIUM NITRIDE GATE STRUCTURES
Fabrication Technique For Gallium Nitride Substrates
