Patent
US 9,293,412GRAPHENE AND METAL INTERCONNECTS WITH REDUCED CONTACT RESISTANCE
Junjing Bao
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,293,412Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a starting graphene and metal interconnect structure including a component and via according to an exemplary embodiment. [0010]
FIG. 2 illustrates the formation of a trench according to an exemplary embodiment. [0011]
FIG. 3 illustrates depositing a liner layer according to an exemplary embodiment [0012]
FIG. 4 illustrates a polishing technique according to an exemplary embodiment [0013]
FIG. 5 illustrates filling the trench with graphene to form a final structure according to an exemplary embodiment [0014]
FIG. 6 illustrates a final structure according to another exemplary embodiment. [0015]
FIG. 7 illustrates a final structure according to another exemplary embodiment. [0016]
FIG. 8 illustrates a beginning structure according to an exemplary embodiment. [0017]
FIG. 9 illustrates forming a trench according to an exemplary embodiment. [0018]
FIG. 10 illustrates forming a palladium liner within the trench according to an exemplary embodiment. [0019]
FIG. 11 illustrates filling the trench, on top of the palladium liner, with a conductive interconnect material according to an exemplary embodiment. [0020]
FIG. 12 illustrates forming a metal cap and a final structure according to an exemplary embodiment. [0021] The drawings are not necessarily to scale. The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A structure comprising: a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line.
The structure of claim 1, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The structure of claim 1, further comprising: a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line, wherein the palladium cap extending extends across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The structure of claim 1, further comprising:-2/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 a first seed layer in direct contact with a side and a bottom of the first metal line; and a second seed layer in direct contact with a side and a bottom of the second metal line, wherein the first and second seed layers comprise ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, further comprising: wherein the palladium liner of the metal via is in direct contact with a seed layer extending along a side and a bottom of the first metal line, the seed layer comprises ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, wherein the metal via further comprises a barri er layer comprising tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof, the ba rri er layer is in direct contact with the palladium liner and a conductive the conductive interconnect material of the metal via.
canceled
(Cu rr ently Amended) A method comprising: forming a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; forming a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and forming a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and replacing a portion of a non-palladium seed layer of the second metal line with a palladium cap in direct contact with a top surface of the metal via and an end portion of the one or more graphene portions of the second metal line, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second metal line.-3/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 8, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and a n the end portion of the one or more graphene portions of the second metal line.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and the end portion of the one or more graphene portions of the second metal line, the palladium cap extending across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The method of claim 8, wherein the palladium liner of the metal via is in direct contact with a first seed layer, the first seed layer is in direct contact with a side and a bottom of the first metal line.
canceled
A method comprising: etching, in a first dielectric layer, a first trench; filling the first trench with graphene;-4/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 etching in a second dielectric layer a via opening, the second dielectric layer is above the first dielectric layer, and at least an end portion of the graphene in the first trench is exposed along a sidewall at a bottom of the via opening; depositing, conformally, a layer of palladium within the via opening; filling the via opening with a conductive interconnect material; etching, in the second dielectric layer, a second trench which intersects with, and at least partially removes a portion of, the conductive interconnect material in the via opening; and filling the second trench with graphene.
The method of claim 14, wherein the graphene of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
The method of claim 14, further comprising: replacing a portion of a non-palladium seed layer of the second trench with a palladium cap in direct contact with a top surface of the conductive interconnect material and an end portion of the graphene in the second trench, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second trench.
(Cu rr ently Amended) The method of claim 14, further comprising: removing a portion of a seed layer to expose an t he end portion of the graphene of the second trench, the seed layer is in direct contact with and extends along a side and a bottom of the second trench; and selectively depositing a palladium cap in direct contact with a conductive the conductive interconnect material and the end portion of the graphene of the second trench, the palladium cap extending across a top surface of the metal via the conductive interconnect and down a vertical interface between the conductive interconnect material and the second trench.-5/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 14, wherein the layer of palladium within the via opening is in direct contact with a seed layer, the seed layer is in direct contact with a side and a bottom of the first metal line.
The method of claim 14, wherein etching the via opening in a second dielectric layer comprises: exposing a seed layer in direct contact with a side and a bottom of the first trench.
The method of claim 14, wherein filling the first trench and the second trench with graphene comprises: using a chemical vapor deposition process to deposit multilayer graphene sheets oriented horizontally parallel with the first and second interconnect levels, respectively.-6/9 -
Layer stacks claimed or described, ordered top of device to substrate.
BEOL graphene-metal interconnect structure with palladium liner via
Materials described outside the worked examples.
graphene
palladium liner/palladium cap
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–450 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,293,412Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a starting graphene and metal interconnect structure including a component and via according to an exemplary embodiment. [0010]
FIG. 2 illustrates the formation of a trench according to an exemplary embodiment. [0011]
FIG. 3 illustrates depositing a liner layer according to an exemplary embodiment [0012]
FIG. 4 illustrates a polishing technique according to an exemplary embodiment [0013]
FIG. 5 illustrates filling the trench with graphene to form a final structure according to an exemplary embodiment [0014]
FIG. 6 illustrates a final structure according to another exemplary embodiment. [0015]
FIG. 7 illustrates a final structure according to another exemplary embodiment. [0016]
FIG. 8 illustrates a beginning structure according to an exemplary embodiment. [0017]
FIG. 9 illustrates forming a trench according to an exemplary embodiment. [0018]
FIG. 10 illustrates forming a palladium liner within the trench according to an exemplary embodiment. [0019]
FIG. 11 illustrates filling the trench, on top of the palladium liner, with a conductive interconnect material according to an exemplary embodiment. [0020]
FIG. 12 illustrates forming a metal cap and a final structure according to an exemplary embodiment. [0021] The drawings are not necessarily to scale. The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A structure comprising: a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line.
The structure of claim 1, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The structure of claim 1, further comprising: a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line, wherein the palladium cap extending extends across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The structure of claim 1, further comprising:-2/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 a first seed layer in direct contact with a side and a bottom of the first metal line; and a second seed layer in direct contact with a side and a bottom of the second metal line, wherein the first and second seed layers comprise ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, further comprising: wherein the palladium liner of the metal via is in direct contact with a seed layer extending along a side and a bottom of the first metal line, the seed layer comprises ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, wherein the metal via further comprises a barri er layer comprising tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof, the ba rri er layer is in direct contact with the palladium liner and a conductive the conductive interconnect material of the metal via.
canceled
(Cu rr ently Amended) A method comprising: forming a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; forming a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and forming a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and replacing a portion of a non-palladium seed layer of the second metal line with a palladium cap in direct contact with a top surface of the metal via and an end portion of the one or more graphene portions of the second metal line, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second metal line.-3/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 8, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and a n the end portion of the one or more graphene portions of the second metal line.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and the end portion of the one or more graphene portions of the second metal line, the palladium cap extending across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The method of claim 8, wherein the palladium liner of the metal via is in direct contact with a first seed layer, the first seed layer is in direct contact with a side and a bottom of the first metal line.
canceled
A method comprising: etching, in a first dielectric layer, a first trench; filling the first trench with graphene;-4/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 etching in a second dielectric layer a via opening, the second dielectric layer is above the first dielectric layer, and at least an end portion of the graphene in the first trench is exposed along a sidewall at a bottom of the via opening; depositing, conformally, a layer of palladium within the via opening; filling the via opening with a conductive interconnect material; etching, in the second dielectric layer, a second trench which intersects with, and at least partially removes a portion of, the conductive interconnect material in the via opening; and filling the second trench with graphene.
The method of claim 14, wherein the graphene of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
The method of claim 14, further comprising: replacing a portion of a non-palladium seed layer of the second trench with a palladium cap in direct contact with a top surface of the conductive interconnect material and an end portion of the graphene in the second trench, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second trench.
(Cu rr ently Amended) The method of claim 14, further comprising: removing a portion of a seed layer to expose an t he end portion of the graphene of the second trench, the seed layer is in direct contact with and extends along a side and a bottom of the second trench; and selectively depositing a palladium cap in direct contact with a conductive the conductive interconnect material and the end portion of the graphene of the second trench, the palladium cap extending across a top surface of the metal via the conductive interconnect and down a vertical interface between the conductive interconnect material and the second trench.-5/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 14, wherein the layer of palladium within the via opening is in direct contact with a seed layer, the seed layer is in direct contact with a side and a bottom of the first metal line.
The method of claim 14, wherein etching the via opening in a second dielectric layer comprises: exposing a seed layer in direct contact with a side and a bottom of the first trench.
The method of claim 14, wherein filling the first trench and the second trench with graphene comprises: using a chemical vapor deposition process to deposit multilayer graphene sheets oriented horizontally parallel with the first and second interconnect levels, respectively.-6/9 -
Layer stacks claimed or described, ordered top of device to substrate.
BEOL graphene-metal interconnect structure with palladium liner via
Materials described outside the worked examples.
graphene
palladium liner/palladium cap
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–450 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,293,412Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a starting graphene and metal interconnect structure including a component and via according to an exemplary embodiment. [0010]
FIG. 2 illustrates the formation of a trench according to an exemplary embodiment. [0011]
FIG. 3 illustrates depositing a liner layer according to an exemplary embodiment [0012]
FIG. 4 illustrates a polishing technique according to an exemplary embodiment [0013]
FIG. 5 illustrates filling the trench with graphene to form a final structure according to an exemplary embodiment [0014]
FIG. 6 illustrates a final structure according to another exemplary embodiment. [0015]
FIG. 7 illustrates a final structure according to another exemplary embodiment. [0016]
FIG. 8 illustrates a beginning structure according to an exemplary embodiment. [0017]
FIG. 9 illustrates forming a trench according to an exemplary embodiment. [0018]
FIG. 10 illustrates forming a palladium liner within the trench according to an exemplary embodiment. [0019]
FIG. 11 illustrates filling the trench, on top of the palladium liner, with a conductive interconnect material according to an exemplary embodiment. [0020]
FIG. 12 illustrates forming a metal cap and a final structure according to an exemplary embodiment. [0021] The drawings are not necessarily to scale. The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A structure comprising: a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line.
The structure of claim 1, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The structure of claim 1, further comprising: a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line, wherein the palladium cap extending extends across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The structure of claim 1, further comprising:-2/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 a first seed layer in direct contact with a side and a bottom of the first metal line; and a second seed layer in direct contact with a side and a bottom of the second metal line, wherein the first and second seed layers comprise ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, further comprising: wherein the palladium liner of the metal via is in direct contact with a seed layer extending along a side and a bottom of the first metal line, the seed layer comprises ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, wherein the metal via further comprises a barri er layer comprising tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof, the ba rri er layer is in direct contact with the palladium liner and a conductive the conductive interconnect material of the metal via.
canceled
(Cu rr ently Amended) A method comprising: forming a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; forming a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and forming a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and replacing a portion of a non-palladium seed layer of the second metal line with a palladium cap in direct contact with a top surface of the metal via and an end portion of the one or more graphene portions of the second metal line, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second metal line.-3/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 8, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and a n the end portion of the one or more graphene portions of the second metal line.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and the end portion of the one or more graphene portions of the second metal line, the palladium cap extending across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The method of claim 8, wherein the palladium liner of the metal via is in direct contact with a first seed layer, the first seed layer is in direct contact with a side and a bottom of the first metal line.
canceled
A method comprising: etching, in a first dielectric layer, a first trench; filling the first trench with graphene;-4/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 etching in a second dielectric layer a via opening, the second dielectric layer is above the first dielectric layer, and at least an end portion of the graphene in the first trench is exposed along a sidewall at a bottom of the via opening; depositing, conformally, a layer of palladium within the via opening; filling the via opening with a conductive interconnect material; etching, in the second dielectric layer, a second trench which intersects with, and at least partially removes a portion of, the conductive interconnect material in the via opening; and filling the second trench with graphene.
The method of claim 14, wherein the graphene of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
The method of claim 14, further comprising: replacing a portion of a non-palladium seed layer of the second trench with a palladium cap in direct contact with a top surface of the conductive interconnect material and an end portion of the graphene in the second trench, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second trench.
(Cu rr ently Amended) The method of claim 14, further comprising: removing a portion of a seed layer to expose an t he end portion of the graphene of the second trench, the seed layer is in direct contact with and extends along a side and a bottom of the second trench; and selectively depositing a palladium cap in direct contact with a conductive the conductive interconnect material and the end portion of the graphene of the second trench, the palladium cap extending across a top surface of the metal via the conductive interconnect and down a vertical interface between the conductive interconnect material and the second trench.-5/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 14, wherein the layer of palladium within the via opening is in direct contact with a seed layer, the seed layer is in direct contact with a side and a bottom of the first metal line.
The method of claim 14, wherein etching the via opening in a second dielectric layer comprises: exposing a seed layer in direct contact with a side and a bottom of the first trench.
The method of claim 14, wherein filling the first trench and the second trench with graphene comprises: using a chemical vapor deposition process to deposit multilayer graphene sheets oriented horizontally parallel with the first and second interconnect levels, respectively.-6/9 -
Layer stacks claimed or described, ordered top of device to substrate.
BEOL graphene-metal interconnect structure with palladium liner via
Materials described outside the worked examples.
graphene
palladium liner/palladium cap
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–450 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,293,412Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a starting graphene and metal interconnect structure including a component and via according to an exemplary embodiment. [0010]
FIG. 2 illustrates the formation of a trench according to an exemplary embodiment. [0011]
FIG. 3 illustrates depositing a liner layer according to an exemplary embodiment [0012]
FIG. 4 illustrates a polishing technique according to an exemplary embodiment [0013]
FIG. 5 illustrates filling the trench with graphene to form a final structure according to an exemplary embodiment [0014]
FIG. 6 illustrates a final structure according to another exemplary embodiment. [0015]
FIG. 7 illustrates a final structure according to another exemplary embodiment. [0016]
FIG. 8 illustrates a beginning structure according to an exemplary embodiment. [0017]
FIG. 9 illustrates forming a trench according to an exemplary embodiment. [0018]
FIG. 10 illustrates forming a palladium liner within the trench according to an exemplary embodiment. [0019]
FIG. 11 illustrates filling the trench, on top of the palladium liner, with a conductive interconnect material according to an exemplary embodiment. [0020]
FIG. 12 illustrates forming a metal cap and a final structure according to an exemplary embodiment. [0021] The drawings are not necessarily to scale. The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A structure comprising: a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line.
The structure of claim 1, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The structure of claim 1, further comprising: a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line, wherein the palladium cap extending extends across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The structure of claim 1, further comprising:-2/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 a first seed layer in direct contact with a side and a bottom of the first metal line; and a second seed layer in direct contact with a side and a bottom of the second metal line, wherein the first and second seed layers comprise ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, further comprising: wherein the palladium liner of the metal via is in direct contact with a seed layer extending along a side and a bottom of the first metal line, the seed layer comprises ruthenium, nickel, palladium, iridium, copper, or any combination thereof.
(Cu rr ently Amended) The structure of claim 1, wherein the metal via further comprises a barri er layer comprising tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof, the ba rri er layer is in direct contact with the palladium liner and a conductive the conductive interconnect material of the metal via.
canceled
(Cu rr ently Amended) A method comprising: forming a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; forming a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; and forming a metal via comprising a palladium liner extends extending vertically and electrically connects connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and replacing a portion of a non-palladium seed layer of the second metal line with a palladium cap in direct contact with a top surface of the metal via and an end portion of the one or more graphene portions of the second metal line, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second metal line.-3/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 8, wherein the one or more graphene portions of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and a n the end portion of the one or more graphene portions of the second metal line.
(Cu rr ently Amended) The method of claim 8, further comprising: removing a portion of a seed layer to expose an t he end portion of the one or more graphene portions of the second metal line, the seed layer is in direct contact with and extends along a side and a bottom of the second metal line; and selectively depositing a palladium cap in direct contact with a conductive interconnect material of the metal via and the end portion of the one or more graphene portions of the second metal line, the palladium cap extending across a top surface of the metal via and down a vertical interface between the metal via and the second metal line.
The method of claim 8, wherein the palladium liner of the metal via is in direct contact with a first seed layer, the first seed layer is in direct contact with a side and a bottom of the first metal line.
canceled
A method comprising: etching, in a first dielectric layer, a first trench; filling the first trench with graphene;-4/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962 etching in a second dielectric layer a via opening, the second dielectric layer is above the first dielectric layer, and at least an end portion of the graphene in the first trench is exposed along a sidewall at a bottom of the via opening; depositing, conformally, a layer of palladium within the via opening; filling the via opening with a conductive interconnect material; etching, in the second dielectric layer, a second trench which intersects with, and at least partially removes a portion of, the conductive interconnect material in the via opening; and filling the second trench with graphene.
The method of claim 14, wherein the graphene of both the first and second metal lines comprises a graphene sheet oriented horizontally parallel with the first and second interconnect levels, respectively.
The method of claim 14, further comprising: replacing a portion of a non-palladium seed layer of the second trench with a palladium cap in direct contact with a top surface of the conductive interconnect material and an end portion of the graphene in the second trench, the non-palladium seed layer is in direct contact with and extends along a side and a bottom of the second trench.
(Cu rr ently Amended) The method of claim 14, further comprising: removing a portion of a seed layer to expose an t he end portion of the graphene of the second trench, the seed layer is in direct contact with and extends along a side and a bottom of the second trench; and selectively depositing a palladium cap in direct contact with a conductive the conductive interconnect material and the end portion of the graphene of the second trench, the palladium cap extending across a top surface of the metal via the conductive interconnect and down a vertical interface between the conductive interconnect material and the second trench.-5/9-Docket No. F I S₉₂₀₁₂₀₂₄₄US₂ Serial No. 14/559,962
The method of claim 14, wherein the layer of palladium within the via opening is in direct contact with a seed layer, the seed layer is in direct contact with a side and a bottom of the first metal line.
The method of claim 14, wherein etching the via opening in a second dielectric layer comprises: exposing a seed layer in direct contact with a side and a bottom of the first trench.
The method of claim 14, wherein filling the first trench and the second trench with graphene comprises: using a chemical vapor deposition process to deposit multilayer graphene sheets oriented horizontally parallel with the first and second interconnect levels, respectively.-6/9 -
Layer stacks claimed or described, ordered top of device to substrate.
BEOL graphene-metal interconnect structure with palladium liner via
Materials described outside the worked examples.
graphene
palladium liner/palladium cap
Pd
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–450 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
conductive interconnect material
seed layer (ruthenium, nickel, palladium, iridium, copper, or any combination thereof)
barrier layer (tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof)
dielectric layer
| — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 80 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A GRAPHENE-BASED BARRIER METAL LAYER
conductive interconnect material
seed layer (ruthenium, nickel, palladium, iridium, copper, or any combination thereof)
barrier layer (tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof)
dielectric layer
| — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 80 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A GRAPHENE-BASED BARRIER METAL LAYER
conductive interconnect material
seed layer (ruthenium, nickel, palladium, iridium, copper, or any combination thereof)
barrier layer (tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof)
dielectric layer
| — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 80 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A GRAPHENE-BASED BARRIER METAL LAYER
conductive interconnect material
seed layer (ruthenium, nickel, palladium, iridium, copper, or any combination thereof)
barrier layer (tantalum, tantalum nitride, titanium, titanium nitride or any combination thereof)
dielectric layer
| — |
Thickness | 25–80 nm | — |
Thickness | 2–5 nm | — |
Thickness | 0.5–5 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 80 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 450 nm | — |
Thickness | ≥ 55 nm | — |
SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING A GRAPHENE-BASED BARRIER METAL LAYER