GRAPHENE DEVICES AND METHODS OF MANUFACTURING THE SAME

Wenxu XIANYU

Patent

Atlas literature

Patent

US 9,293,596

GRAPHENE DEVICES AND METHODS OF MANUFACTURING THE SAME

Wenxu XIANYU

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIGS. 1 0 A and 1 0 B are cross-sectional views illustrating a method of forming the stacked structure of

FIG. 2

FIG. 2. Although not shown, another coating layer may further be disposed on a lower surface of the substrate SUB 1 of

FIG. 3

FIG. 3, a coating layer CT₁ ' may be disposed only on an upper surface of the substrate SUB 1, and the graphene device (graphene transistor) as described above …

FIG. 4

FIG. 4, a capping layer CP₁ ' may cover a channel layer C 1, a source electrode S 1, and a drain electrode D 1, and may have an opening exposing a region of a …

FIG. 5

FIG. 5 is a plan view illustrating various planar structures of a channel layer included in a graphene device, according to an example embodiment; [0024]

FIG. 6

FIGS. 6A to 6J are cross-sectional views illustrating a method of manufacturing a graphene device, according to an example embodiment; [0025]

FIG. 7

FIGS. 7A to 7D are cross-sectional views illustrating a method of forming a stacked structure of

FIG. 8

FIG. 8 is a cross-sectional view of a modiﬁed example of the stacked structure illustrated in

FIG. 9

FIGS. 9A to 9 C are cross-sectional views illustrating a method of forming the stacked structure of

FIG. 10

FIG. 10B, the insulating material layer 140A, the graphene material layer 130A, the catalyst material layer 120A, and the sacriﬁcial material layer 11 0 A may …

FIG. 11

FIG. 11 is a cross-sectional view illustrating a process of etching a sacriﬁcial layer to manufacture a graphene device, according to an example embodiment; …

FIG. 12

FIGS. 12A to 12F are perspective views illustrating a method of manufacturing a graphene device, according to another example embodiment; [0031]

FIG. 13

FIG. 13 is a cross-sectional view taken along a line I- I ' of

FIG. 14

FIGS. 14A and 14B are perspective views illustrating a method of manufacturing a graphene device, according to another example embodiment; and [0033]

FIG. 15

FIG. 15 is a cross-sectional view taken along a line I I-II ' of

FIG. 61

FIG. 61, the passivation layer 240, the gate insulating layer 220, and the capping layer 210 may be partially etched to form ﬁrst to third contact holes H₁ to …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

24 independent · 9 dependent

1
Independentgraphenegraphene field-effect transistor
A graphene device comprising: a channel layer on a substrate, the channel layer including graphene; a source electrode on a ﬁrst region of the channel layer; a drain electrode on a second region of the channel layer; a capping layer covering the channel layer, the source electrode, and the drain electrode, the capping layer being formed of an insulating material, the capping layer including an opening exposing a channel region of the channel layer between the source electrode and the drain electrode; a gate insulating layer on the capping layer to cover the channel region; and a gate on the gate insulating layer between the source electrode and the drain electrode.
1. 2
  Dependent← claim 1graphene field-effect transistor
  The graphene device of claim 1, further comprising: an insulating layer between the substrate and the channel layer.
2. 4
  Dependent← claim 1catalyst material for growing graphenegraphene field-effect transistor
  The graphene device of claim 1, wherein the source electrode and the drain electrode are formed of a catalyst material for growing graphene.
3. 5
  Dependent← claim 1graphene field-effect transistor
  The graphene device of claim 1, further comprising: a passivation layer on the gate insulating layer to cover the gate.
4. 7
  Dependent← claim 1substrate materialgraphene field-effect transistor
  The graphene device of claim 1, wherein the substrate includes at least one of a plastic substrate, a glass substrate, and a silicon substrate.
5. 30
  Dependent← claim 1graphene field-effect transistor
  The graphene device of claim 1, wherein the capping layer directly contacts a side surface of the source electrode and the drain electrode.
6. 31
  Dependent← claim 1graphene field-effect transistor
  The graphene device of claim 1, wherein the capping layer directly contacts a side surface of the channel layer.
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Independentgraphenegraphene field-effect transistor
A graphene device comprising: a channel layer on a substrate, the channel layer including graphene; a source electrode on a ﬁrst region of the channel layer; a drain electrode on a second region of the channel layer; Page 3 Application No. 14/642,326 Attorney Docket No. 2557S I-00 1748-US-DVA a capping layer covering the channel layer, the source electrode, and the drain electrode, the capping layer including an opening exposing a channel region of the channel layer between the source electrode and the drain electrode; a gate insulating layer on the capping layer to cover the channel region; and a gate on the gate insulating layer between the source electrode and the drain electrode, wherein the capping layer directly contacts side surfaces of the source electrode, the drain electrode and the channel layer. *** END CLAIM LISTING *** Page 4

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene field-effect transistor

gategate

gate_insulating_layergate insulating layer

capping_layercapping layer

catalyst material for growing graphenedrain electrode

catalyst material for growing graphenesource electrode

Materials

Materials described outside the worked examples.

graphene

Claimed Channel Material

catalyst material for growing graphene

Electrode Material

Process steps

Additional fabrication and treatment steps described in the patent.

Device Fabrication

Step 1

Process details

steps:forming at least one stacked structure on a first substrate (sacrificial layer, catalyst layer, graphene layer sequentially stacked), adhering a second substrate onto the at least one stacked structure, separating the first substrate by etching the sacrificial layer, forming capping layer to cover stacked structure on second substrate, patterning capping layer and catalyst layer to form source and drain electrodes and expose channel region, forming gate insulating layer on capping layer to cover channel region, forming gate on gate insulating layer

Materials:graphene

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 3, a coating layer CT₁ ' may be disposed only on an upper surface of the substrate SUB 1, and the graphene device (graphene transistor) as described above …

Figure references

FIG. 3

graphene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	100–500 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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