GRAPHENE-ENCAPSULATED NANOPARTICLE-BASED BIOSENSOR FOR THE SELECTIVE DETECTION OF BIOMARKERS

Ki-Bum Lee

Patent

Atlas literature

Patent

US 9,162,885

GRAPHENE-ENCAPSULATED NANOPARTICLE-BASED BIOSENSOR FOR THE SELECTIVE DETECTION OF BIOMARKERS

Ki-Bum Lee

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 C, the device 101 containing the patterned photoresist along with the SAMs is centrifuged in a solution of GO-NPs 107 at, for example, 2000 RPM for …

FIG. 2

FIG. 2C. Furthermore, due to the large surface- to- volume ratio of the rGO-NPs, embodiment biosensors 101 are highly eﬃcient as compared to the thin-ﬁlm …

FIG. 3

FIG. 3A depicts relative conductance change (%) in response to the concentration of HER₂ with VDS = 1 V and Vg = 0 V. Time-dependent conductance measurements …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 9 dependent

1
Independentreduced graphene oxide encapsulated semiconductor nanoparticlessemiconductor substratefield-effect transistor (FET) biosensor
A ﬁeld eﬀect transistor (FET) comprising a source electrode and a drain electrode distanced apart from each other on a semi-conductor substrate, and a gate electrode consisting of a uniform layer of reduced graphene oxide encapsulated semiconductor nanoparticles (rGO- NPs), wherein said gate electrode is disposed between and contacts both the source and drain electrodes.
1. 2
  Dependent← claim 1SiO₂field-effect transistor (FET) biosensor
  The FET of claim 1, wherein the semiconductor nanoparticles comprise silicon oxide nanoparticles.
2. 3
  Dependent← claim 1reduced graphene oxide encapsulated semiconductor nanoparticlesfield-effect transistor (FET) biosensor
  The FET of claim 1, wherein the rGO-NPs are functionalized with a binding partner for a biomarker.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

field-effect transistor (FET) biosensor

reduced graphene oxide encapsulated semiconductor nanoparticlesgate electrode

Audrain electrode

Ausource electrode

semiconductor substratesubstrate

Materials

Materials described outside the worked examples.

reduced graphene oxide encapsulated semiconductor nanoparticles

Gate Electrode Material

semiconductor substrate

Substrate

Process steps

Additional fabrication and treatment steps described in the patent.

Device Fabrication

Step 1

Process details

steps:a) layering conductive metal electrodes on a semiconductor substrate, b) layering a patterned photoresist on the substrate and electrodes to define an exposed area for formation of the gate electrode, c) functionalizing the semiconductor and conductive metal surfaces on the exposed areas with a self assembled monolayer (SAM) of positively charged amines, d) centrifuging the functionalized substrate in a solution containing graphene oxide-encapsulated semiconductor nanoparticles (GO-NPs) to form a gate electrode on the SAM that is a substantially uniform dense layer of GO-NPs, e) removing the patterned photoresist, f) reducing the graphene oxide of the GO-NPs to form rGO-NPs

Materials:

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 3A depicts relative conductance change (%) in response to the concentration of HER₂ with VDS = 1 V and Vg = 0 V. Time-dependent conductance measurements …

Figure references

FIG. 3

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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