Patent
Atlas literature
Patent
US 11,719,883 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
FIG. 3 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 5.
FIG. 6a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure comprising at least three sub-layers support-ing a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein a first sub-layer in the active waveguide structure comprises an n-contact layer, a second sub-layer in the active waveguide structure comprises a p-contact layer, and a third sub-layer in the active waveguide structure comprises an active region; wherein, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adia-batic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, 45 second and third elements.
The device of claim 1, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
The device of claim 1, wherein the n-contact layer and the p-contact layer com-prise highly-doped GaAs layers.
The device of claim 1, wherein the active region comprises quantum wells.
The device of claim 1, wherein the active region comprises quantum dots.
The device of claim 1, wherein the active region comprises a pin-junction.
The device of claim 1, wherein the second element has a refractive index between 1.8 and 2.5, and a thickness between 20 nm and 2000 nm.
The device of claim 1, wherein the third element has a refractive index between 1.55 and 2.2, and wherein the refractive index of the third element is lower than the refractive index of the second element.
The device of claim 1, wherein the active waveguide structure in the first element comprises at least five sub-layers supporting a first optical mode; and wherein a fourth sub-layer in the active waveguide struc-ture comprises an n-cladding layer, and a fifth sub-layer in the active waveguide structure comprises a p-clad-ding layer.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein the third element provides cladding for the sec-ond element; wherein a tapered waveguide structure in second element facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, second and third elements.
The device of claim 14, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 14, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
Layer stacks claimed or described, ordered top of device to substrate.
integrated photonic device with active, passive, and intermediate waveguide elements (claim 1 variant)
Materials described outside the worked examples.
active waveguide structure material (GaAs-based)
passive waveguide material
intermediate waveguide material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.8–2.5 | passive waveguide material |
thickness of second element (passive waveguide) | 20–2000 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
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Patent
Atlas literature
Patent
US 11,719,883 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
FIG. 3 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 5.
FIG. 6a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure comprising at least three sub-layers support-ing a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein a first sub-layer in the active waveguide structure comprises an n-contact layer, a second sub-layer in the active waveguide structure comprises a p-contact layer, and a third sub-layer in the active waveguide structure comprises an active region; wherein, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adia-batic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, 45 second and third elements.
The device of claim 1, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
The device of claim 1, wherein the n-contact layer and the p-contact layer com-prise highly-doped GaAs layers.
The device of claim 1, wherein the active region comprises quantum wells.
The device of claim 1, wherein the active region comprises quantum dots.
The device of claim 1, wherein the active region comprises a pin-junction.
The device of claim 1, wherein the second element has a refractive index between 1.8 and 2.5, and a thickness between 20 nm and 2000 nm.
The device of claim 1, wherein the third element has a refractive index between 1.55 and 2.2, and wherein the refractive index of the third element is lower than the refractive index of the second element.
The device of claim 1, wherein the active waveguide structure in the first element comprises at least five sub-layers supporting a first optical mode; and wherein a fourth sub-layer in the active waveguide struc-ture comprises an n-cladding layer, and a fifth sub-layer in the active waveguide structure comprises a p-clad-ding layer.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein the third element provides cladding for the sec-ond element; wherein a tapered waveguide structure in second element facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, second and third elements.
The device of claim 14, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 14, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
Layer stacks claimed or described, ordered top of device to substrate.
integrated photonic device with active, passive, and intermediate waveguide elements (claim 1 variant)
Materials described outside the worked examples.
active waveguide structure material (GaAs-based)
passive waveguide material
intermediate waveguide material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.8–2.5 | passive waveguide material |
thickness of second element (passive waveguide) | 20–2000 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,719,883 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
FIG. 3 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 5.
FIG. 6a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure comprising at least three sub-layers support-ing a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein a first sub-layer in the active waveguide structure comprises an n-contact layer, a second sub-layer in the active waveguide structure comprises a p-contact layer, and a third sub-layer in the active waveguide structure comprises an active region; wherein, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adia-batic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, 45 second and third elements.
The device of claim 1, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
The device of claim 1, wherein the n-contact layer and the p-contact layer com-prise highly-doped GaAs layers.
The device of claim 1, wherein the active region comprises quantum wells.
The device of claim 1, wherein the active region comprises quantum dots.
The device of claim 1, wherein the active region comprises a pin-junction.
The device of claim 1, wherein the second element has a refractive index between 1.8 and 2.5, and a thickness between 20 nm and 2000 nm.
The device of claim 1, wherein the third element has a refractive index between 1.55 and 2.2, and wherein the refractive index of the third element is lower than the refractive index of the second element.
The device of claim 1, wherein the active waveguide structure in the first element comprises at least five sub-layers supporting a first optical mode; and wherein a fourth sub-layer in the active waveguide struc-ture comprises an n-cladding layer, and a fifth sub-layer in the active waveguide structure comprises a p-clad-ding layer.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein the third element provides cladding for the sec-ond element; wherein a tapered waveguide structure in second element facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, second and third elements.
The device of claim 14, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 14, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
Layer stacks claimed or described, ordered top of device to substrate.
integrated photonic device with active, passive, and intermediate waveguide elements (claim 1 variant)
Materials described outside the worked examples.
active waveguide structure material (GaAs-based)
passive waveguide material
intermediate waveguide material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.8–2.5 | passive waveguide material |
thickness of second element (passive waveguide) | 20–2000 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,719,883 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
FIG. 3 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional top-down view of a device according to some embodiments of the present invention.
FIG. 5.
FIG. 6a shows cross-sectional end-on views at three different axial positions of a device corresponding to an embodiment of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure comprising at least three sub-layers support-ing a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein a first sub-layer in the active waveguide structure comprises an n-contact layer, a second sub-layer in the active waveguide structure comprises a p-contact layer, and a third sub-layer in the active waveguide structure comprises an active region; wherein, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adia-batic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, 45 second and third elements.
The device of claim 1, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
The device of claim 1, wherein the n-contact layer and the p-contact layer com-prise highly-doped GaAs layers.
The device of claim 1, wherein the active region comprises quantum wells.
The device of claim 1, wherein the active region comprises quantum dots.
The device of claim 1, wherein the active region comprises a pin-junction.
The device of claim 1, wherein the second element has a refractive index between 1.8 and 2.5, and a thickness between 20 nm and 2000 nm.
The device of claim 1, wherein the third element has a refractive index between 1.55 and 2.2, and wherein the refractive index of the third element is lower than the refractive index of the second element.
The device of claim 1, wherein the active waveguide structure in the first element comprises at least five sub-layers supporting a first optical mode; and wherein a fourth sub-layer in the active waveguide struc-ture comprises an n-cladding layer, and a fifth sub-layer in the active waveguide structure comprises a p-clad-ding layer.
A device comprising: first, second and third elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, and the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting two or more intermediate optical modes; wherein the third element provides cladding for the sec-ond element; wherein a tapered waveguide structure in second element facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, second and third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, second and third elements.
The device of claim 14, wherein the second element comprises a planar top sur-face underlying and in direct contact with a lower surface of the third element.
The device of claim 14, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections between the first and third elements.
Layer stacks claimed or described, ordered top of device to substrate.
integrated photonic device with active, passive, and intermediate waveguide elements (claim 1 variant)
Materials described outside the worked examples.
active waveguide structure material (GaAs-based)
passive waveguide material
intermediate waveguide material
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.8–2.5 | passive waveguide material |
thickness of second element (passive waveguide) | 20–2000 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 29
Related documents with shared materials, methods, properties, or citations.
integrated photonic device with active, passive, and intermediate waveguide elements (claim 14 variant, third element provides cladding for second element)
GaAs
AlGaAs
SiN
TiO₂
Ta₂O₅
AlN
LiNbO₃
SiO₂
refractive index of third element (intermediate waveguide) | 1.55–2.2 | intermediate waveguide material |
Al concentration in AlGaAs cladding layers | 5–60 | AlGaAs |
Thickness | 400–2000 nm | — |
Thickness | 50–200 nm | — |
Thickness | 5–80 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 20–400 nm | — |
Thickness | 20–2000 nm | — |
integrated photonic device with active, passive, and intermediate waveguide elements (claim 14 variant, third element provides cladding for second element)
GaAs
AlGaAs
SiN
TiO₂
Ta₂O₅
AlN
LiNbO₃
SiO₂
refractive index of third element (intermediate waveguide) | 1.55–2.2 | intermediate waveguide material |
Al concentration in AlGaAs cladding layers | 5–60 | AlGaAs |
Thickness | 400–2000 nm | — |
Thickness | 50–200 nm | — |
Thickness | 5–80 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 20–400 nm | — |
Thickness | 20–2000 nm | — |
integrated photonic device with active, passive, and intermediate waveguide elements (claim 14 variant, third element provides cladding for second element)
GaAs
AlGaAs
SiN
TiO₂
Ta₂O₅
AlN
LiNbO₃
SiO₂
refractive index of third element (intermediate waveguide) | 1.55–2.2 | intermediate waveguide material |
Al concentration in AlGaAs cladding layers | 5–60 | AlGaAs |
Thickness | 400–2000 nm | — |
Thickness | 50–200 nm | — |
Thickness | 5–80 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 20–400 nm | — |
Thickness | 20–2000 nm | — |
integrated photonic device with active, passive, and intermediate waveguide elements (claim 14 variant, third element provides cladding for second element)
GaAs
AlGaAs
SiN
TiO₂
Ta₂O₅
AlN
LiNbO₃
SiO₂
refractive index of third element (intermediate waveguide) | 1.55–2.2 | intermediate waveguide material |
Al concentration in AlGaAs cladding layers | 5–60 | AlGaAs |
Thickness | 400–2000 nm | — |
Thickness | 50–200 nm | — |
Thickness | 5–80 nm | — |
Thickness | 100–2000 nm | — |
Thickness | 20–400 nm | — |
Thickness | 20–2000 nm | — |
