Patent
US 10,683,586METHOD OF PULSED LASER-BASED LARGE AREA GRAPHENE SYNTHESIS ON METALLIC AND CRYSTALLINE SUBSTRATES
Barbaros Ozyilmaz
National University of Singapore·13 August 2015·US
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Patent
Atlas literature
Patent
US 10,683,586Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustrating the process for crystallization of a metal s ubstrate. [0011]
FIG. 2C is a schematic illustrating the use of a laser to pattern graphene. WO 2015/119572 PCT/SG₂ 015/000029 4 [0014]
FIG. 3 is schematic illustrating a laser beam that is substantially parallel to a surface of a substrate. [0016]
FIG. 4 is schematic illustrating the use of a perpendicular laser beam to anneal the graphene such that the grain size grows from small polycrystalline to …
FIG. 5 B is a schematic illustrating graphene growth on a three-fold symmetric Ge [111] surface.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making graphene, comprising: providing a seed gas in the presence of a metallic substrate having a surface; irradiating the substrate with a pulsed, ultraviolet laser beam at an angle of about 30 degrees or less to photodissociate the seed gas so that carbon atoms of the photodissociated seed gas form graphene crystals on the substrate; and moving the substrate or the ultraviolet laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. Currently amended
The method of claim 1, wherein the ultraviolet laser beam has a pulse duration of about nanoseconds. Previously presented
The method of claim 1, wherein the seed gas is methane or acetylene. Original
The method of claim 1, wherein the wavelength of the ultraviolet laser beam is approximately 193 nm, 248 nm, or 308 nm. Previously presented
The method of claim 1, wherein the metallic substrate is nickel, copper, scandium, titanium, vanadium, manganese, iron, cobalt, ruthenium, platinum, germanium, silicon carbide, silicon, or a copper-nickel alloy. Original
The method of claim 1, further comprising annealing the ordered graphene structure with the laser. Original
Canceled
4-6. Canceled
Canceled
The method of claim I 1, further comprising preparing the germanium [110] surface by contacting the germanium [1 10] surface with one or more of piranha solution (H₂ 0 2:H₂SO₄) and hydrofluoric acid. Original
15-26. Canceled
Canceled
Materials described outside the worked examples.
graphene
seed gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,683,586Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustrating the process for crystallization of a metal s ubstrate. [0011]
FIG. 2C is a schematic illustrating the use of a laser to pattern graphene. WO 2015/119572 PCT/SG₂ 015/000029 4 [0014]
FIG. 3 is schematic illustrating a laser beam that is substantially parallel to a surface of a substrate. [0016]
FIG. 4 is schematic illustrating the use of a perpendicular laser beam to anneal the graphene such that the grain size grows from small polycrystalline to …
FIG. 5 B is a schematic illustrating graphene growth on a three-fold symmetric Ge [111] surface.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making graphene, comprising: providing a seed gas in the presence of a metallic substrate having a surface; irradiating the substrate with a pulsed, ultraviolet laser beam at an angle of about 30 degrees or less to photodissociate the seed gas so that carbon atoms of the photodissociated seed gas form graphene crystals on the substrate; and moving the substrate or the ultraviolet laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. Currently amended
The method of claim 1, wherein the ultraviolet laser beam has a pulse duration of about nanoseconds. Previously presented
The method of claim 1, wherein the seed gas is methane or acetylene. Original
The method of claim 1, wherein the wavelength of the ultraviolet laser beam is approximately 193 nm, 248 nm, or 308 nm. Previously presented
The method of claim 1, wherein the metallic substrate is nickel, copper, scandium, titanium, vanadium, manganese, iron, cobalt, ruthenium, platinum, germanium, silicon carbide, silicon, or a copper-nickel alloy. Original
The method of claim 1, further comprising annealing the ordered graphene structure with the laser. Original
Canceled
4-6. Canceled
Canceled
The method of claim I 1, further comprising preparing the germanium [110] surface by contacting the germanium [1 10] surface with one or more of piranha solution (H₂ 0 2:H₂SO₄) and hydrofluoric acid. Original
15-26. Canceled
Canceled
Materials described outside the worked examples.
graphene
seed gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,683,586Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustrating the process for crystallization of a metal s ubstrate. [0011]
FIG. 2C is a schematic illustrating the use of a laser to pattern graphene. WO 2015/119572 PCT/SG₂ 015/000029 4 [0014]
FIG. 3 is schematic illustrating a laser beam that is substantially parallel to a surface of a substrate. [0016]
FIG. 4 is schematic illustrating the use of a perpendicular laser beam to anneal the graphene such that the grain size grows from small polycrystalline to …
FIG. 5 B is a schematic illustrating graphene growth on a three-fold symmetric Ge [111] surface.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making graphene, comprising: providing a seed gas in the presence of a metallic substrate having a surface; irradiating the substrate with a pulsed, ultraviolet laser beam at an angle of about 30 degrees or less to photodissociate the seed gas so that carbon atoms of the photodissociated seed gas form graphene crystals on the substrate; and moving the substrate or the ultraviolet laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. Currently amended
The method of claim 1, wherein the ultraviolet laser beam has a pulse duration of about nanoseconds. Previously presented
The method of claim 1, wherein the seed gas is methane or acetylene. Original
The method of claim 1, wherein the wavelength of the ultraviolet laser beam is approximately 193 nm, 248 nm, or 308 nm. Previously presented
The method of claim 1, wherein the metallic substrate is nickel, copper, scandium, titanium, vanadium, manganese, iron, cobalt, ruthenium, platinum, germanium, silicon carbide, silicon, or a copper-nickel alloy. Original
The method of claim 1, further comprising annealing the ordered graphene structure with the laser. Original
Canceled
4-6. Canceled
Canceled
The method of claim I 1, further comprising preparing the germanium [110] surface by contacting the germanium [1 10] surface with one or more of piranha solution (H₂ 0 2:H₂SO₄) and hydrofluoric acid. Original
15-26. Canceled
Canceled
Materials described outside the worked examples.
graphene
seed gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,683,586Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustrating the process for crystallization of a metal s ubstrate. [0011]
FIG. 2C is a schematic illustrating the use of a laser to pattern graphene. WO 2015/119572 PCT/SG₂ 015/000029 4 [0014]
FIG. 3 is schematic illustrating a laser beam that is substantially parallel to a surface of a substrate. [0016]
FIG. 4 is schematic illustrating the use of a perpendicular laser beam to anneal the graphene such that the grain size grows from small polycrystalline to …
FIG. 5 B is a schematic illustrating graphene growth on a three-fold symmetric Ge [111] surface.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making graphene, comprising: providing a seed gas in the presence of a metallic substrate having a surface; irradiating the substrate with a pulsed, ultraviolet laser beam at an angle of about 30 degrees or less to photodissociate the seed gas so that carbon atoms of the photodissociated seed gas form graphene crystals on the substrate; and moving the substrate or the ultraviolet laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. Currently amended
The method of claim 1, wherein the ultraviolet laser beam has a pulse duration of about nanoseconds. Previously presented
The method of claim 1, wherein the seed gas is methane or acetylene. Original
The method of claim 1, wherein the wavelength of the ultraviolet laser beam is approximately 193 nm, 248 nm, or 308 nm. Previously presented
The method of claim 1, wherein the metallic substrate is nickel, copper, scandium, titanium, vanadium, manganese, iron, cobalt, ruthenium, platinum, germanium, silicon carbide, silicon, or a copper-nickel alloy. Original
The method of claim 1, further comprising annealing the ordered graphene structure with the laser. Original
Canceled
4-6. Canceled
Canceled
The method of claim I 1, further comprising preparing the germanium [110] surface by contacting the germanium [1 10] surface with one or more of piranha solution (H₂ 0 2:H₂SO₄) and hydrofluoric acid. Original
15-26. Canceled
Canceled
Materials described outside the worked examples.
graphene
seed gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–1000 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
methane
CH₄
acetylene
C₂H₂
nickel
Ni
copper
Cu
scandium
Sc
titanium
Ti
vanadium
V
manganese
Mn
iron
Fe
cobalt
Co
ruthenium
Ru
platinum
Pt
germanium
Ge
silicon carbide
SiC
silicon
Si
copper-nickel alloy
piranha solution
H₂O2:H₂SO₄
hydrofluoric acid
HF
polycrystalline graphene
| — |
methane
CH₄
acetylene
C₂H₂
nickel
Ni
copper
Cu
scandium
Sc
titanium
Ti
vanadium
V
manganese
Mn
iron
Fe
cobalt
Co
ruthenium
Ru
platinum
Pt
germanium
Ge
silicon carbide
SiC
silicon
Si
copper-nickel alloy
piranha solution
H₂O2:H₂SO₄
hydrofluoric acid
HF
polycrystalline graphene
| — |
methane
CH₄
acetylene
C₂H₂
nickel
Ni
copper
Cu
scandium
Sc
titanium
Ti
vanadium
V
manganese
Mn
iron
Fe
cobalt
Co
ruthenium
Ru
platinum
Pt
germanium
Ge
silicon carbide
SiC
silicon
Si
copper-nickel alloy
piranha solution
H₂O2:H₂SO₄
hydrofluoric acid
HF
polycrystalline graphene
| — |
methane
CH₄
acetylene
C₂H₂
nickel
Ni
copper
Cu
scandium
Sc
titanium
Ti
vanadium
V
manganese
Mn
iron
Fe
cobalt
Co
ruthenium
Ru
platinum
Pt
germanium
Ge
silicon carbide
SiC
silicon
Si
copper-nickel alloy
piranha solution
H₂O2:H₂SO₄
hydrofluoric acid
HF
polycrystalline graphene
| — |