Patent
US 8,840,722GRAPHENE PRODUCTION USING LASER HEATED CRYSTAL GROWTH
James Pierre Hauck
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,840,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An apparatus for producing graphene comprising: a seed crystal affixed to a support substrate such that the seed crystal faces substantially downwardly from the support substrate about a location; a feedstock injector configured to provide a feedstock; a laser configured to selectively generate a laser beam; [[and]] beam shaping optics configured to couple the laser beam to at least a portion of the seed crystal and at least a portion of the feedstock about the location to form a downwardly hanging graphene crysta l; and an electrostatic enclosure configured to selectively provide an electrostatic field, wherein the electrostatic field is effective to a pply a strai ghtening force to the downwardly hang ing gra phene crystal. currently amended
The apparatus of claim 8, wherein the support substrate comprises at least one of silicon carbide, silicon dioxide or copper. 2 S/N 13/946,961
The apparatus of claim 8, wherein the seed crystal comprises a graphene seed crystal having a crystal growth axis aligned such that the feedstock from the feedstock injector and the laser beam are provided incident to the crystal growth axis.
The apparatus of claim 8, wherein the seed crystal is affixed to the support substrate with an epoxy.
The apparatus of claim 8, wherein the feedstock comprises at least one of carbon, graphite particles, an oxidizer or a reducer.
The apparatus of claim 8, wherein the laser comprises at least one of a CO₂ laser, a Nd:YAG laser or a laser diode.
The apparatus of claim 8, wherein the beam shaping optics comprise a reflaxicon.
The apparatus of claim 8, wherein the laser and the beam shaping optics are cooperatively configured to provide multiple laser beams in a linear two dimensional array.
The apparatus of claim 8, further comprising: a process unit control logic coupled to the feedstock injector and the laser, wherein the process unit control logic is configured to selectively activate the feedstock injector to inject the 3 S/N 13/946,961 feedstock and also configured to selectively activate the laser to provide the laser beam. 1 8.-30.
The apparatus of claim 8, wherein the feedstock injector and the support substrate are moved relative to each other such that the support substrate moves while the feedstock injector remains stationary.
The apparatus of claim 8, wherein the feedstock is provided in a laminar flow regime.
The apparatus of claim 8, wherein the laser beam comprises at least one of a linear shape or a rectangular shape.
The apparatus of claim 8, wherein the laser beam is configured to heat at least a portion of the seed crystal and at least a portion of the feedstock about the location.
The apparatus of claim 8, wherein the laser, the feedstock injector, and a crystal removal device are configured to be one o f: automatically actuated and robotically actuated. 4
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Layer stacks claimed or described, ordered top of device to substrate.
apparatus for producing graphene
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,840,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
An apparatus for producing graphene comprising: a seed crystal affixed to a support substrate such that the seed crystal faces substantially downwardly from the support substrate about a location; a feedstock injector configured to provide a feedstock; a laser configured to selectively generate a laser beam; [[and]] beam shaping optics configured to couple the laser beam to at least a portion of the seed crystal and at least a portion of the feedstock about the location to form a downwardly hanging graphene crysta l; and an electrostatic enclosure configured to selectively provide an electrostatic field, wherein the electrostatic field is effective to a pply a strai ghtening force to the downwardly hang ing gra phene crystal. currently amended
The apparatus of claim 8, wherein the support substrate comprises at least one of silicon carbide, silicon dioxide or copper. 2 S/N 13/946,961
The apparatus of claim 8, wherein the seed crystal comprises a graphene seed crystal having a crystal growth axis aligned such that the feedstock from the feedstock injector and the laser beam are provided incident to the crystal growth axis.
The apparatus of claim 8, wherein the seed crystal is affixed to the support substrate with an epoxy.
The apparatus of claim 8, wherein the feedstock comprises at least one of carbon, graphite particles, an oxidizer or a reducer.
The apparatus of claim 8, wherein the laser comprises at least one of a CO₂ laser, a Nd:YAG laser or a laser diode.
The apparatus of claim 8, wherein the beam shaping optics comprise a reflaxicon.
The apparatus of claim 8, wherein the laser and the beam shaping optics are cooperatively configured to provide multiple laser beams in a linear two dimensional array.
The apparatus of claim 8, further comprising: a process unit control logic coupled to the feedstock injector and the laser, wherein the process unit control logic is configured to selectively activate the feedstock injector to inject the 3 S/N 13/946,961 feedstock and also configured to selectively activate the laser to provide the laser beam. 1 8.-30.
The apparatus of claim 8, wherein the feedstock injector and the support substrate are moved relative to each other such that the support substrate moves while the feedstock injector remains stationary.
The apparatus of claim 8, wherein the feedstock is provided in a laminar flow regime.
The apparatus of claim 8, wherein the laser beam comprises at least one of a linear shape or a rectangular shape.
The apparatus of claim 8, wherein the laser beam is configured to heat at least a portion of the seed crystal and at least a portion of the feedstock about the location.
The apparatus of claim 8, wherein the laser, the feedstock injector, and a crystal removal device are configured to be one o f: automatically actuated and robotically actuated. 4
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for producing graphene
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,840,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
An apparatus for producing graphene comprising: a seed crystal affixed to a support substrate such that the seed crystal faces substantially downwardly from the support substrate about a location; a feedstock injector configured to provide a feedstock; a laser configured to selectively generate a laser beam; [[and]] beam shaping optics configured to couple the laser beam to at least a portion of the seed crystal and at least a portion of the feedstock about the location to form a downwardly hanging graphene crysta l; and an electrostatic enclosure configured to selectively provide an electrostatic field, wherein the electrostatic field is effective to a pply a strai ghtening force to the downwardly hang ing gra phene crystal. currently amended
The apparatus of claim 8, wherein the support substrate comprises at least one of silicon carbide, silicon dioxide or copper. 2 S/N 13/946,961
The apparatus of claim 8, wherein the seed crystal comprises a graphene seed crystal having a crystal growth axis aligned such that the feedstock from the feedstock injector and the laser beam are provided incident to the crystal growth axis.
The apparatus of claim 8, wherein the seed crystal is affixed to the support substrate with an epoxy.
The apparatus of claim 8, wherein the feedstock comprises at least one of carbon, graphite particles, an oxidizer or a reducer.
The apparatus of claim 8, wherein the laser comprises at least one of a CO₂ laser, a Nd:YAG laser or a laser diode.
The apparatus of claim 8, wherein the beam shaping optics comprise a reflaxicon.
The apparatus of claim 8, wherein the laser and the beam shaping optics are cooperatively configured to provide multiple laser beams in a linear two dimensional array.
The apparatus of claim 8, further comprising: a process unit control logic coupled to the feedstock injector and the laser, wherein the process unit control logic is configured to selectively activate the feedstock injector to inject the 3 S/N 13/946,961 feedstock and also configured to selectively activate the laser to provide the laser beam. 1 8.-30.
The apparatus of claim 8, wherein the feedstock injector and the support substrate are moved relative to each other such that the support substrate moves while the feedstock injector remains stationary.
The apparatus of claim 8, wherein the feedstock is provided in a laminar flow regime.
The apparatus of claim 8, wherein the laser beam comprises at least one of a linear shape or a rectangular shape.
The apparatus of claim 8, wherein the laser beam is configured to heat at least a portion of the seed crystal and at least a portion of the feedstock about the location.
The apparatus of claim 8, wherein the laser, the feedstock injector, and a crystal removal device are configured to be one o f: automatically actuated and robotically actuated. 4
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for producing graphene
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,840,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
An apparatus for producing graphene comprising: a seed crystal affixed to a support substrate such that the seed crystal faces substantially downwardly from the support substrate about a location; a feedstock injector configured to provide a feedstock; a laser configured to selectively generate a laser beam; [[and]] beam shaping optics configured to couple the laser beam to at least a portion of the seed crystal and at least a portion of the feedstock about the location to form a downwardly hanging graphene crysta l; and an electrostatic enclosure configured to selectively provide an electrostatic field, wherein the electrostatic field is effective to a pply a strai ghtening force to the downwardly hang ing gra phene crystal. currently amended
The apparatus of claim 8, wherein the support substrate comprises at least one of silicon carbide, silicon dioxide or copper. 2 S/N 13/946,961
The apparatus of claim 8, wherein the seed crystal comprises a graphene seed crystal having a crystal growth axis aligned such that the feedstock from the feedstock injector and the laser beam are provided incident to the crystal growth axis.
The apparatus of claim 8, wherein the seed crystal is affixed to the support substrate with an epoxy.
The apparatus of claim 8, wherein the feedstock comprises at least one of carbon, graphite particles, an oxidizer or a reducer.
The apparatus of claim 8, wherein the laser comprises at least one of a CO₂ laser, a Nd:YAG laser or a laser diode.
The apparatus of claim 8, wherein the beam shaping optics comprise a reflaxicon.
The apparatus of claim 8, wherein the laser and the beam shaping optics are cooperatively configured to provide multiple laser beams in a linear two dimensional array.
The apparatus of claim 8, further comprising: a process unit control logic coupled to the feedstock injector and the laser, wherein the process unit control logic is configured to selectively activate the feedstock injector to inject the 3 S/N 13/946,961 feedstock and also configured to selectively activate the laser to provide the laser beam. 1 8.-30.
The apparatus of claim 8, wherein the feedstock injector and the support substrate are moved relative to each other such that the support substrate moves while the feedstock injector remains stationary.
The apparatus of claim 8, wherein the feedstock is provided in a laminar flow regime.
The apparatus of claim 8, wherein the laser beam comprises at least one of a linear shape or a rectangular shape.
The apparatus of claim 8, wherein the laser beam is configured to heat at least a portion of the seed crystal and at least a portion of the feedstock about the location.
The apparatus of claim 8, wherein the laser, the feedstock injector, and a crystal removal device are configured to be one o f: automatically actuated and robotically actuated. 4
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
apparatus for producing graphene
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
silicon dioxide
SiO₂
copper
Cu
carbon
C
graphite particles
silicon dioxide
SiO₂
copper
Cu
carbon
C
graphite particles
silicon dioxide
SiO₂
copper
Cu
carbon
C
graphite particles
silicon dioxide
SiO₂
copper
Cu
carbon
C
graphite particles