Patent
US 10,995,419process chamber
deposition system
copper
Cu
gold
Au
silicon
Si
substrate bow less than 50 µm achievable with disclosed methods/systems | 0–50 µm | GaN |
optically transparent divider temperature less than ~400°C during processing | ≤ 400 °C | quartz |
Pressure | ≤ 500 Torr | — |
process chamber
deposition system
copper
Cu
gold
Au
silicon
Si
substrate bow less than 50 µm achievable with disclosed methods/systems | 0–50 µm | GaN |
optically transparent divider temperature less than ~400°C during processing | ≤ 400 °C | quartz |
Pressure | ≤ 500 Torr | — |
process chamber
deposition system
copper
Cu
gold
Au
silicon
Si
substrate bow less than 50 µm achievable with disclosed methods/systems | 0–50 µm | GaN |
optically transparent divider temperature less than ~400°C during processing | ≤ 400 °C | quartz |
Pressure | ≤ 500 Torr | — |
process chamber
deposition system
copper
Cu
gold
Au
silicon
Si
substrate bow less than 50 µm achievable with disclosed methods/systems | 0–50 µm | GaN |
optically transparent divider temperature less than ~400°C during processing | ≤ 400 °C | quartz |
Pressure | ≤ 500 Torr | — |