Patent
Atlas literature
Patent
US 12,218,261 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional diagram of a partial interdigital electrode structure of an InGaN/GaN multiple quantum well (MQW) blue light detector of the …
FIG. 2 is a schematic plan view of an electrode structure of the InGaN/GaN multiple quantum well (MQW) blue light detector of the present invention.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
FIG. 4 is a spectral response diagram of the InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure, comprising: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top, wherein the InGaN/GaN multiple quantum well layer has a groove and a mesa, the mesa and the groove of the InGaN/GaN multiple quantum well layer are provided with a Si₃N₄ passivation layer, the Si₃N₄ passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the Si₃N₄ passivation layer on the mesa is provided with a second metal layer electrode, wherein the embedded electrode is the first metal layer electrode, and the passivation layer structure is the Si₃N₄ passivation layer.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the Si substrate has a thickness of 520 to 530 µm; the AlN/AlGaN/GaN buffer layer comprises an AlN layer with a thickness of 300-400 nm, an AlGaN layer with a thickness of 600-700 nm and a GaN layer with a thickness of 300-400 nm; the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer com-prises a first u-GaN layer with a thickness of 300-400 nm, an AlN layer with a thickness of 200-300 nm, a second u-GaN layer with a thickness of 300-400 nm, a SiNx layer with a thickness of 400-600 nm and a third u-GaN layer with a thickness of 300-400 nm; the n-GaN buffer layer has a thickness of 2-3 µm; the InGaN/GaN superlattice layer has a thickness of 500-600 nm and is in an alternating arrangement struc-ture; the InGaN/GaN multiple quantum well layer has a thickness of 170-340 nm; and the Si₃N₄ passivation layer has a thickness of 5-20 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are Ni/Au metal layer electrodes, the Ni/Au metal layer elec-trode comprising a Ni metal layer with a thickness of 70-90 nm and an Au metal layer with a thickness of 70-90 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the InGaN/GaN multiple quantum well layer is in a form of superim-posing a layer of InGaN on a layer of GaN with superim-posing for 9-12 times as a period, the GaN layer with a thickness of 13-18 nm, and the InGaN layer with a thickness of 6-10 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are interdigital electrodes, the first metal layer electrode and the second metal layer electrodes being alternately arranged.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the groove is a strip-shaped structure with equal spacing, the groove has a width of 100-150 nm and a depth of 160-200 nm, and a distance between center lines of two grooves is 400-650 nm; the first metal layer electrode is a semicircular electrode with a cross section radius of 100-140 nm; and an overall length-width dimension of the detector is 5.2×5.2 to 8.45× 8.45 µm2.
A preparation method of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the method comprises: step 1, growing the AlN/AlGaN/GaN buffer layer, the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, the B₂ n-GaN buffer layer, the InGaN/GaN superlattice layer and the InGaN/GaN multiple quantum well layer on the Si substrate by MOCVD; step 2, performing ICP etching on the InGaN/GaN mul-tiple quantum well layer obtained in step 1 to obtain the mesa and the groove; step 3, performing PECVD to deposit the Si₃N₄ passiva-tion layer on the InGaN/GaN multiple quantum well layer with the groove obtained in step 2; step 4, photoetching the Si₃N₄ passivation layer obtained in step 3 by firstly coating evenly and drying, then exposing and developing, and finally undergoing oxy-gen ion treatment; and step 5, evaporating the groove and the mesa of the Si₃N₄ passivation layer obtained in step 4, first evaporating Ni and then evaporating Au, after taking out, locally heating metal layer electrode by a resistance heating method to change a cross-sectional shape of the metal layer electrode to semicircle, and cleaning to obtain the InGaN/GaN multiple quantum well blue light detector.
An application of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1 in blue light detection.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN multiple quantum well blue light detector with embedded electrode and passivation layer
Materials described outside the worked examples.
Si substrate
Si
AlN/AlGaN/GaN buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–530 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,218,261 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional diagram of a partial interdigital electrode structure of an InGaN/GaN multiple quantum well (MQW) blue light detector of the …
FIG. 2 is a schematic plan view of an electrode structure of the InGaN/GaN multiple quantum well (MQW) blue light detector of the present invention.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
FIG. 4 is a spectral response diagram of the InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure, comprising: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top, wherein the InGaN/GaN multiple quantum well layer has a groove and a mesa, the mesa and the groove of the InGaN/GaN multiple quantum well layer are provided with a Si₃N₄ passivation layer, the Si₃N₄ passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the Si₃N₄ passivation layer on the mesa is provided with a second metal layer electrode, wherein the embedded electrode is the first metal layer electrode, and the passivation layer structure is the Si₃N₄ passivation layer.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the Si substrate has a thickness of 520 to 530 µm; the AlN/AlGaN/GaN buffer layer comprises an AlN layer with a thickness of 300-400 nm, an AlGaN layer with a thickness of 600-700 nm and a GaN layer with a thickness of 300-400 nm; the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer com-prises a first u-GaN layer with a thickness of 300-400 nm, an AlN layer with a thickness of 200-300 nm, a second u-GaN layer with a thickness of 300-400 nm, a SiNx layer with a thickness of 400-600 nm and a third u-GaN layer with a thickness of 300-400 nm; the n-GaN buffer layer has a thickness of 2-3 µm; the InGaN/GaN superlattice layer has a thickness of 500-600 nm and is in an alternating arrangement struc-ture; the InGaN/GaN multiple quantum well layer has a thickness of 170-340 nm; and the Si₃N₄ passivation layer has a thickness of 5-20 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are Ni/Au metal layer electrodes, the Ni/Au metal layer elec-trode comprising a Ni metal layer with a thickness of 70-90 nm and an Au metal layer with a thickness of 70-90 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the InGaN/GaN multiple quantum well layer is in a form of superim-posing a layer of InGaN on a layer of GaN with superim-posing for 9-12 times as a period, the GaN layer with a thickness of 13-18 nm, and the InGaN layer with a thickness of 6-10 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are interdigital electrodes, the first metal layer electrode and the second metal layer electrodes being alternately arranged.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the groove is a strip-shaped structure with equal spacing, the groove has a width of 100-150 nm and a depth of 160-200 nm, and a distance between center lines of two grooves is 400-650 nm; the first metal layer electrode is a semicircular electrode with a cross section radius of 100-140 nm; and an overall length-width dimension of the detector is 5.2×5.2 to 8.45× 8.45 µm2.
A preparation method of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the method comprises: step 1, growing the AlN/AlGaN/GaN buffer layer, the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, the B₂ n-GaN buffer layer, the InGaN/GaN superlattice layer and the InGaN/GaN multiple quantum well layer on the Si substrate by MOCVD; step 2, performing ICP etching on the InGaN/GaN mul-tiple quantum well layer obtained in step 1 to obtain the mesa and the groove; step 3, performing PECVD to deposit the Si₃N₄ passiva-tion layer on the InGaN/GaN multiple quantum well layer with the groove obtained in step 2; step 4, photoetching the Si₃N₄ passivation layer obtained in step 3 by firstly coating evenly and drying, then exposing and developing, and finally undergoing oxy-gen ion treatment; and step 5, evaporating the groove and the mesa of the Si₃N₄ passivation layer obtained in step 4, first evaporating Ni and then evaporating Au, after taking out, locally heating metal layer electrode by a resistance heating method to change a cross-sectional shape of the metal layer electrode to semicircle, and cleaning to obtain the InGaN/GaN multiple quantum well blue light detector.
An application of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1 in blue light detection.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN multiple quantum well blue light detector with embedded electrode and passivation layer
Materials described outside the worked examples.
Si substrate
Si
AlN/AlGaN/GaN buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–530 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,218,261 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional diagram of a partial interdigital electrode structure of an InGaN/GaN multiple quantum well (MQW) blue light detector of the …
FIG. 2 is a schematic plan view of an electrode structure of the InGaN/GaN multiple quantum well (MQW) blue light detector of the present invention.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
FIG. 4 is a spectral response diagram of the InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure, comprising: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top, wherein the InGaN/GaN multiple quantum well layer has a groove and a mesa, the mesa and the groove of the InGaN/GaN multiple quantum well layer are provided with a Si₃N₄ passivation layer, the Si₃N₄ passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the Si₃N₄ passivation layer on the mesa is provided with a second metal layer electrode, wherein the embedded electrode is the first metal layer electrode, and the passivation layer structure is the Si₃N₄ passivation layer.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the Si substrate has a thickness of 520 to 530 µm; the AlN/AlGaN/GaN buffer layer comprises an AlN layer with a thickness of 300-400 nm, an AlGaN layer with a thickness of 600-700 nm and a GaN layer with a thickness of 300-400 nm; the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer com-prises a first u-GaN layer with a thickness of 300-400 nm, an AlN layer with a thickness of 200-300 nm, a second u-GaN layer with a thickness of 300-400 nm, a SiNx layer with a thickness of 400-600 nm and a third u-GaN layer with a thickness of 300-400 nm; the n-GaN buffer layer has a thickness of 2-3 µm; the InGaN/GaN superlattice layer has a thickness of 500-600 nm and is in an alternating arrangement struc-ture; the InGaN/GaN multiple quantum well layer has a thickness of 170-340 nm; and the Si₃N₄ passivation layer has a thickness of 5-20 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are Ni/Au metal layer electrodes, the Ni/Au metal layer elec-trode comprising a Ni metal layer with a thickness of 70-90 nm and an Au metal layer with a thickness of 70-90 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the InGaN/GaN multiple quantum well layer is in a form of superim-posing a layer of InGaN on a layer of GaN with superim-posing for 9-12 times as a period, the GaN layer with a thickness of 13-18 nm, and the InGaN layer with a thickness of 6-10 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are interdigital electrodes, the first metal layer electrode and the second metal layer electrodes being alternately arranged.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the groove is a strip-shaped structure with equal spacing, the groove has a width of 100-150 nm and a depth of 160-200 nm, and a distance between center lines of two grooves is 400-650 nm; the first metal layer electrode is a semicircular electrode with a cross section radius of 100-140 nm; and an overall length-width dimension of the detector is 5.2×5.2 to 8.45× 8.45 µm2.
A preparation method of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the method comprises: step 1, growing the AlN/AlGaN/GaN buffer layer, the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, the B₂ n-GaN buffer layer, the InGaN/GaN superlattice layer and the InGaN/GaN multiple quantum well layer on the Si substrate by MOCVD; step 2, performing ICP etching on the InGaN/GaN mul-tiple quantum well layer obtained in step 1 to obtain the mesa and the groove; step 3, performing PECVD to deposit the Si₃N₄ passiva-tion layer on the InGaN/GaN multiple quantum well layer with the groove obtained in step 2; step 4, photoetching the Si₃N₄ passivation layer obtained in step 3 by firstly coating evenly and drying, then exposing and developing, and finally undergoing oxy-gen ion treatment; and step 5, evaporating the groove and the mesa of the Si₃N₄ passivation layer obtained in step 4, first evaporating Ni and then evaporating Au, after taking out, locally heating metal layer electrode by a resistance heating method to change a cross-sectional shape of the metal layer electrode to semicircle, and cleaning to obtain the InGaN/GaN multiple quantum well blue light detector.
An application of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1 in blue light detection.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN multiple quantum well blue light detector with embedded electrode and passivation layer
Materials described outside the worked examples.
Si substrate
Si
AlN/AlGaN/GaN buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–530 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,218,261 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional diagram of a partial interdigital electrode structure of an InGaN/GaN multiple quantum well (MQW) blue light detector of the …
FIG. 2 is a schematic plan view of an electrode structure of the InGaN/GaN multiple quantum well (MQW) blue light detector of the present invention.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
FIG. 4 is a spectral response diagram of the InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure, comprising: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top, wherein the InGaN/GaN multiple quantum well layer has a groove and a mesa, the mesa and the groove of the InGaN/GaN multiple quantum well layer are provided with a Si₃N₄ passivation layer, the Si₃N₄ passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the Si₃N₄ passivation layer on the mesa is provided with a second metal layer electrode, wherein the embedded electrode is the first metal layer electrode, and the passivation layer structure is the Si₃N₄ passivation layer.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the Si substrate has a thickness of 520 to 530 µm; the AlN/AlGaN/GaN buffer layer comprises an AlN layer with a thickness of 300-400 nm, an AlGaN layer with a thickness of 600-700 nm and a GaN layer with a thickness of 300-400 nm; the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer com-prises a first u-GaN layer with a thickness of 300-400 nm, an AlN layer with a thickness of 200-300 nm, a second u-GaN layer with a thickness of 300-400 nm, a SiNx layer with a thickness of 400-600 nm and a third u-GaN layer with a thickness of 300-400 nm; the n-GaN buffer layer has a thickness of 2-3 µm; the InGaN/GaN superlattice layer has a thickness of 500-600 nm and is in an alternating arrangement struc-ture; the InGaN/GaN multiple quantum well layer has a thickness of 170-340 nm; and the Si₃N₄ passivation layer has a thickness of 5-20 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are Ni/Au metal layer electrodes, the Ni/Au metal layer elec-trode comprising a Ni metal layer with a thickness of 70-90 nm and an Au metal layer with a thickness of 70-90 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the InGaN/GaN multiple quantum well layer is in a form of superim-posing a layer of InGaN on a layer of GaN with superim-posing for 9-12 times as a period, the GaN layer with a thickness of 13-18 nm, and the InGaN layer with a thickness of 6-10 nm.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the first metal layer electrode and the second metal layer electrode are interdigital electrodes, the first metal layer electrode and the second metal layer electrodes being alternately arranged.
The InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the groove is a strip-shaped structure with equal spacing, the groove has a width of 100-150 nm and a depth of 160-200 nm, and a distance between center lines of two grooves is 400-650 nm; the first metal layer electrode is a semicircular electrode with a cross section radius of 100-140 nm; and an overall length-width dimension of the detector is 5.2×5.2 to 8.45× 8.45 µm2.
A preparation method of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1, wherein the method comprises: step 1, growing the AlN/AlGaN/GaN buffer layer, the u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, the B₂ n-GaN buffer layer, the InGaN/GaN superlattice layer and the InGaN/GaN multiple quantum well layer on the Si substrate by MOCVD; step 2, performing ICP etching on the InGaN/GaN mul-tiple quantum well layer obtained in step 1 to obtain the mesa and the groove; step 3, performing PECVD to deposit the Si₃N₄ passiva-tion layer on the InGaN/GaN multiple quantum well layer with the groove obtained in step 2; step 4, photoetching the Si₃N₄ passivation layer obtained in step 3 by firstly coating evenly and drying, then exposing and developing, and finally undergoing oxy-gen ion treatment; and step 5, evaporating the groove and the mesa of the Si₃N₄ passivation layer obtained in step 4, first evaporating Ni and then evaporating Au, after taking out, locally heating metal layer electrode by a resistance heating method to change a cross-sectional shape of the metal layer electrode to semicircle, and cleaning to obtain the InGaN/GaN multiple quantum well blue light detector.
An application of the InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure according to claim 1 in blue light detection.
Layer stacks claimed or described, ordered top of device to substrate.
InGaN/GaN multiple quantum well blue light detector with embedded electrode and passivation layer
Materials described outside the worked examples.
Si substrate
Si
AlN/AlGaN/GaN buffer layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a PL curve of an InGaN/GaN multiple quantum well (MQW) blue light detector prepared in Embodiment 1.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–530 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer
n-GaN buffer layer
InGaN/GaN superlattice layer
InGaN/GaN multiple quantum well layer
Si₃N₄ passivation layer
Si₃N₄
SiNx interlayer
SiNx
Ni metal layer (electrode)
Ni
Au metal layer (electrode)
Au
| 300–400 nm |
| — |
Thickness | 600–700 nm | — |
Thickness | 200–300 nm | — |
Thickness | 400–600 nm | — |
Thickness | 2–3 µm | — |
Thickness | 500–600 nm | — |
Thickness | 180–260 nm | — |
Thickness | 13–18 nm | — |
Thickness | 6–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 70–90 nm | — |
Thickness | 100–150 nm | — |
Thickness | 160–200 nm | — |
Thickness | 400–650 nm | — |
Thickness | 100–140 nm | — |
Thickness | 170–340 nm | — |
Temperature | 1000–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 550–760 °C | — |
Duration | 1.5–3.5 min | — |
Thickness | 0.16–0.22 nm | — |
Temperature | 1455–1555 °C | — |
Thickness | 40–48 nm | — |
Thickness | 10–12 nm | — |
u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer
n-GaN buffer layer
InGaN/GaN superlattice layer
InGaN/GaN multiple quantum well layer
Si₃N₄ passivation layer
Si₃N₄
SiNx interlayer
SiNx
Ni metal layer (electrode)
Ni
Au metal layer (electrode)
Au
| 300–400 nm |
| — |
Thickness | 600–700 nm | — |
Thickness | 200–300 nm | — |
Thickness | 400–600 nm | — |
Thickness | 2–3 µm | — |
Thickness | 500–600 nm | — |
Thickness | 180–260 nm | — |
Thickness | 13–18 nm | — |
Thickness | 6–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 70–90 nm | — |
Thickness | 100–150 nm | — |
Thickness | 160–200 nm | — |
Thickness | 400–650 nm | — |
Thickness | 100–140 nm | — |
Thickness | 170–340 nm | — |
Temperature | 1000–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 550–760 °C | — |
Duration | 1.5–3.5 min | — |
Thickness | 0.16–0.22 nm | — |
Temperature | 1455–1555 °C | — |
Thickness | 40–48 nm | — |
Thickness | 10–12 nm | — |
u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer
n-GaN buffer layer
InGaN/GaN superlattice layer
InGaN/GaN multiple quantum well layer
Si₃N₄ passivation layer
Si₃N₄
SiNx interlayer
SiNx
Ni metal layer (electrode)
Ni
Au metal layer (electrode)
Au
| 300–400 nm |
| — |
Thickness | 600–700 nm | — |
Thickness | 200–300 nm | — |
Thickness | 400–600 nm | — |
Thickness | 2–3 µm | — |
Thickness | 500–600 nm | — |
Thickness | 180–260 nm | — |
Thickness | 13–18 nm | — |
Thickness | 6–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 70–90 nm | — |
Thickness | 100–150 nm | — |
Thickness | 160–200 nm | — |
Thickness | 400–650 nm | — |
Thickness | 100–140 nm | — |
Thickness | 170–340 nm | — |
Temperature | 1000–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 550–760 °C | — |
Duration | 1.5–3.5 min | — |
Thickness | 0.16–0.22 nm | — |
Temperature | 1455–1555 °C | — |
Thickness | 40–48 nm | — |
Thickness | 10–12 nm | — |
u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer
n-GaN buffer layer
InGaN/GaN superlattice layer
InGaN/GaN multiple quantum well layer
Si₃N₄ passivation layer
Si₃N₄
SiNx interlayer
SiNx
Ni metal layer (electrode)
Ni
Au metal layer (electrode)
Au
| 300–400 nm |
| — |
Thickness | 600–700 nm | — |
Thickness | 200–300 nm | — |
Thickness | 400–600 nm | — |
Thickness | 2–3 µm | — |
Thickness | 500–600 nm | — |
Thickness | 180–260 nm | — |
Thickness | 13–18 nm | — |
Thickness | 6–10 nm | — |
Thickness | 5–20 nm | — |
Thickness | 70–90 nm | — |
Thickness | 100–150 nm | — |
Thickness | 160–200 nm | — |
Thickness | 400–650 nm | — |
Thickness | 100–140 nm | — |
Thickness | 170–340 nm | — |
Temperature | 1000–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 550–760 °C | — |
Duration | 1.5–3.5 min | — |
Thickness | 0.16–0.22 nm | — |
Temperature | 1455–1555 °C | — |
Thickness | 40–48 nm | — |
Thickness | 10–12 nm | — |
