Patent
US 8,330,187GaN-BASED FIELD EFFECT TRANSISTOR
Nomura Takehiko
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,330,187Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the firs t recess section; a gate electrode formed on the insulating film in the first recess section; and a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode, an4 on a surface of the electron supply layer in a second recess section formed in the surface layer and on a same level.
The GaN-based field effect transistor according to claim 1, further comprising, a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is n-type or undoped GaN layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is an A lxGaix N layer, and the electron supply layer is an Al yGaiy N layer, where x<y.
The GaN-based field effect transistor according to claim 1, wherein the surface layer has a thickness of around 20 nm.
The GaN-based field effect transistor according to claim 1, wherein the surface layer separates the electron supply layer from the insulating film.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer, wherein the surface layer separates the electron supply layer from the insulating film.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (claims 1-12)
GaN-based MOSFET with drift layer (claim 13)
Materials described outside the worked examples.
p-type or undoped GaN-based compound semiconductor (channel layer)
GaN-based compound semiconductor (electron supply layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,330,187Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the firs t recess section; a gate electrode formed on the insulating film in the first recess section; and a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode, an4 on a surface of the electron supply layer in a second recess section formed in the surface layer and on a same level.
The GaN-based field effect transistor according to claim 1, further comprising, a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is n-type or undoped GaN layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is an A lxGaix N layer, and the electron supply layer is an Al yGaiy N layer, where x<y.
The GaN-based field effect transistor according to claim 1, wherein the surface layer has a thickness of around 20 nm.
The GaN-based field effect transistor according to claim 1, wherein the surface layer separates the electron supply layer from the insulating film.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer, wherein the surface layer separates the electron supply layer from the insulating film.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (claims 1-12)
GaN-based MOSFET with drift layer (claim 13)
Materials described outside the worked examples.
p-type or undoped GaN-based compound semiconductor (channel layer)
GaN-based compound semiconductor (electron supply layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,330,187Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the firs t recess section; a gate electrode formed on the insulating film in the first recess section; and a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode, an4 on a surface of the electron supply layer in a second recess section formed in the surface layer and on a same level.
The GaN-based field effect transistor according to claim 1, further comprising, a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is n-type or undoped GaN layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is an A lxGaix N layer, and the electron supply layer is an Al yGaiy N layer, where x<y.
The GaN-based field effect transistor according to claim 1, wherein the surface layer has a thickness of around 20 nm.
The GaN-based field effect transistor according to claim 1, wherein the surface layer separates the electron supply layer from the insulating film.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer, wherein the surface layer separates the electron supply layer from the insulating film.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (claims 1-12)
GaN-based MOSFET with drift layer (claim 13)
Materials described outside the worked examples.
p-type or undoped GaN-based compound semiconductor (channel layer)
GaN-based compound semiconductor (electron supply layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,330,187Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Cu rr ently Amended) A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the firs t recess section; a gate electrode formed on the insulating film in the first recess section; and a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode, an4 on a surface of the electron supply layer in a second recess section formed in the surface layer and on a same level.
The GaN-based field effect transistor according to claim 1, further comprising, a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is n-type or undoped GaN layer.
The GaN-based field effect transistor according to claim 1, wherein the surface layer is an A lxGaix N layer, and the electron supply layer is an Al yGaiy N layer, where x<y.
The GaN-based field effect transistor according to claim 1, wherein the surface layer has a thickness of around 20 nm.
The GaN-based field effect transistor according to claim 1, wherein the surface layer separates the electron supply layer from the insulating film.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer.
A GaN-based field effect transistor, comprising: a substrate; a channel layer comprised of p-type or undoped GaN-based compound semiconductor material formed on the substrate; an electron supply layer formed on the channel layer and comprised of GaN-based compound semiconductor material, the electron supply layer having bandgap energy greater than that of the channel layer; a surface layer formed on the electron supply layer and comprised of GaN-based compound semiconductor material, the surface layer having bandgap energy smaller than that of the electron supply layer; a first recess section having a surface of the channel layer as a bottom surface, exposed by removing a part of the surface layer and the electron supply layer; an insulating film formed on the surface layer and an inner surface of the first recess section; a gate electrode formed on the insulating film in the first recess section; a source electrode and a drain electrode electrically connected to the channel layer, the source electrode and the drain electrode being formed on respective sides across the gate electrode and on a surface of the electron supply layer in a second recess section formed in the surface layer; and a drift layer between the electron supply layer and the channel layer, comprising p-type or undoped GaN-based compound semiconductor material, the drift layer having bandgap energy smaller than that of the electron supply layer and impurity concentration lower than that of the channel layer, wherein the surface layer separates the electron supply layer from the insulating film.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based MOSFET (claims 1-12)
GaN-based MOSFET with drift layer (claim 13)
Materials described outside the worked examples.
p-type or undoped GaN-based compound semiconductor (channel layer)
GaN-based compound semiconductor (electron supply layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
GaN-based MOSFET with drift layer and surface layer isolating electron supply layer from insulating film (claim 14)
GaN-based MOSFET first embodiment (Fig. 1)
GaN-based compound semiconductor (surface layer)
insulating film
p-type or undoped GaN-based compound semiconductor (drift layer)
n-type or undoped GaN
GaN
AlxGa(1-x)N surface layer
AlxGa(1-x)N
AlyGa(1-y)N electron supply layer
AlyGa(1-y)N
AlzGa(1-z)N graded electron supply layer (0 < z < 1, decreasing Al toward surface)
AlzGa(1-z)N
AlGaN (electron supply layer, embodiment)
AlGaN
SiO₂ (gate insulation film, embodiment)
SiO₂
GaN/AlN buffer layer
Si substrate (111)
Si
GaN-based MOSFET with drift layer and surface layer isolating electron supply layer from insulating film (claim 14)
GaN-based MOSFET first embodiment (Fig. 1)
GaN-based compound semiconductor (surface layer)
insulating film
p-type or undoped GaN-based compound semiconductor (drift layer)
n-type or undoped GaN
GaN
AlxGa(1-x)N surface layer
AlxGa(1-x)N
AlyGa(1-y)N electron supply layer
AlyGa(1-y)N
AlzGa(1-z)N graded electron supply layer (0 < z < 1, decreasing Al toward surface)
AlzGa(1-z)N
AlGaN (electron supply layer, embodiment)
AlGaN
SiO₂ (gate insulation film, embodiment)
SiO₂
GaN/AlN buffer layer
Si substrate (111)
Si
GaN-based MOSFET with drift layer and surface layer isolating electron supply layer from insulating film (claim 14)
GaN-based MOSFET first embodiment (Fig. 1)
GaN-based compound semiconductor (surface layer)
insulating film
p-type or undoped GaN-based compound semiconductor (drift layer)
n-type or undoped GaN
GaN
AlxGa(1-x)N surface layer
AlxGa(1-x)N
AlyGa(1-y)N electron supply layer
AlyGa(1-y)N
AlzGa(1-z)N graded electron supply layer (0 < z < 1, decreasing Al toward surface)
AlzGa(1-z)N
AlGaN (electron supply layer, embodiment)
AlGaN
SiO₂ (gate insulation film, embodiment)
SiO₂
GaN/AlN buffer layer
Si substrate (111)
Si
GaN-based MOSFET with drift layer and surface layer isolating electron supply layer from insulating film (claim 14)
GaN-based MOSFET first embodiment (Fig. 1)
GaN-based compound semiconductor (surface layer)
insulating film
p-type or undoped GaN-based compound semiconductor (drift layer)
n-type or undoped GaN
GaN
AlxGa(1-x)N surface layer
AlxGa(1-x)N
AlyGa(1-y)N electron supply layer
AlyGa(1-y)N
AlzGa(1-z)N graded electron supply layer (0 < z < 1, decreasing Al toward surface)
AlzGa(1-z)N
AlGaN (electron supply layer, embodiment)
AlGaN
SiO₂ (gate insulation film, embodiment)
SiO₂
GaN/AlN buffer layer
Si substrate (111)
Si