Patent
Atlas literature
Patent
US 12,559,861 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of one of preparation devices;
FIG. 2 is a structure diagram of an injection lifting rod;
FIG. 3 is a schematic view of in-situ annealing assembly;
FIG. 4 is a structure diagram of a lifting rod;
FIG. 5 is a schematic view of a fixing structure for a lower seal cover;
FIG. 6 is a structure diagram of a drive rod and a fixing structure thereof;
FIG. 7 is a structure diagram of an upper seal cover;
FIG. 8 is a structure diagram of a seed crystal rod;
FIG. 9 is a schematic view of hydrogen treatment on an 45 indium melt;
FIG. 10 is a schematic view of injection synthesis; and
FIG. 11 is a schematic view of crystal growth. In which, 1: main furnace body; 1-1: chassis; 2: upper furnace body; 3: seed crystal rod; 3-1: auxiliary seed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation device of semi-insulated indium phos-phide, comprising a furnace body, a crucible and a heating and supporting system disposed in the furnace body, a seed crystal rod passing through the furnace body, wherein a hydrogen gas tube, an inert gas tube, and an exhaust tube are disposed on a side face of the furnace body; an injector is disposed in the furnace body, and an injection lifting rod connected to the injector protrudes from the furnace body so as to be connected to a driving device; and an in-situ annealing device is also disposed in the furnace body; the in-situ annealing device comprises an upper seal cover, an upper seal cover driving device, a lower seal cover, and a lower seal cover driving device; a lower part of the upper seal cover is open to form an upper seal cover main body, an upper part of the lower seal cover is open, an upper seal cover heating wire is disposed outside the upper seal cover main body, and a lower seal cover heating wire is disposed outside the upper opening of the lower seal cover; and driven by the upper seal cover driving device and the lower seal cover driving device, the seal cover main body is partially overlapped with the upper opening of the lower seal cover to form an annealing space.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein an injector heating wire is disposed surrounding the injector, and the injection tube communicates the injector with the inner space of the furnace body.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein the upper seal cover driving device comprises a lifting rod connected to a driving mechanism outside the furnace body and a lifting rod support connected to the lifting rod, the lifting rod support is connected to the upper seal cover, and the lifting rod drives the upper seal cover to move up and down; the lower seal cover driving device comprises a drive rod connected to the driving mechanism, the drive rod is connected to the lower seal cover, and the drive rod drives the lower seal cover to move left and right; a storage chamber is disposed inside the furnace body, and thea space size of the storage chamber is set according to the lower seal cover; and the drive rod drives the lower seal cover to recess into and extend from the storage chamber.
A preparation method of semi-insulated indium phos-phide, completed based on the preparation device of semiinsulated indium phosphide according to claim 1, wherein the method comprises the following steps: step A, heating indium to form an indium melt; step B, filling the furnace body with hydrogen of 0.02-0.3 MPa and holding pressure for 1-5 hours, so that hydro-gen atoms are dissolved into the indium melt; and covering the surface of the melt with liquid boron oxide; step C, filling the furnace body with an inert gas of 6-15 MPa; step D, by means of the injector, injecting a phosphorus gas into the indium melt to obtain a phosphorus-rich indium-phosphorus melt; step E, growing a crystal; and step F, after completion of the crystal growth, annealing the crystal in an in-situ annealing device to complete the preparation of semi-insulated indium phosphide.
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulated indium phosphide preparation device with in-situ annealing
No layer stack recorded.
Materials described outside the worked examples.
indium
In
boron oxide
B₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hydrogen pressure in step B | 0.02–0.3 MPa | H₂ |
hydrogen hold time in step B | 1–5 hours |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,559,861 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of one of preparation devices;
FIG. 2 is a structure diagram of an injection lifting rod;
FIG. 3 is a schematic view of in-situ annealing assembly;
FIG. 4 is a structure diagram of a lifting rod;
FIG. 5 is a schematic view of a fixing structure for a lower seal cover;
FIG. 6 is a structure diagram of a drive rod and a fixing structure thereof;
FIG. 7 is a structure diagram of an upper seal cover;
FIG. 8 is a structure diagram of a seed crystal rod;
FIG. 9 is a schematic view of hydrogen treatment on an 45 indium melt;
FIG. 10 is a schematic view of injection synthesis; and
FIG. 11 is a schematic view of crystal growth. In which, 1: main furnace body; 1-1: chassis; 2: upper furnace body; 3: seed crystal rod; 3-1: auxiliary seed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation device of semi-insulated indium phos-phide, comprising a furnace body, a crucible and a heating and supporting system disposed in the furnace body, a seed crystal rod passing through the furnace body, wherein a hydrogen gas tube, an inert gas tube, and an exhaust tube are disposed on a side face of the furnace body; an injector is disposed in the furnace body, and an injection lifting rod connected to the injector protrudes from the furnace body so as to be connected to a driving device; and an in-situ annealing device is also disposed in the furnace body; the in-situ annealing device comprises an upper seal cover, an upper seal cover driving device, a lower seal cover, and a lower seal cover driving device; a lower part of the upper seal cover is open to form an upper seal cover main body, an upper part of the lower seal cover is open, an upper seal cover heating wire is disposed outside the upper seal cover main body, and a lower seal cover heating wire is disposed outside the upper opening of the lower seal cover; and driven by the upper seal cover driving device and the lower seal cover driving device, the seal cover main body is partially overlapped with the upper opening of the lower seal cover to form an annealing space.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein an injector heating wire is disposed surrounding the injector, and the injection tube communicates the injector with the inner space of the furnace body.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein the upper seal cover driving device comprises a lifting rod connected to a driving mechanism outside the furnace body and a lifting rod support connected to the lifting rod, the lifting rod support is connected to the upper seal cover, and the lifting rod drives the upper seal cover to move up and down; the lower seal cover driving device comprises a drive rod connected to the driving mechanism, the drive rod is connected to the lower seal cover, and the drive rod drives the lower seal cover to move left and right; a storage chamber is disposed inside the furnace body, and thea space size of the storage chamber is set according to the lower seal cover; and the drive rod drives the lower seal cover to recess into and extend from the storage chamber.
A preparation method of semi-insulated indium phos-phide, completed based on the preparation device of semiinsulated indium phosphide according to claim 1, wherein the method comprises the following steps: step A, heating indium to form an indium melt; step B, filling the furnace body with hydrogen of 0.02-0.3 MPa and holding pressure for 1-5 hours, so that hydro-gen atoms are dissolved into the indium melt; and covering the surface of the melt with liquid boron oxide; step C, filling the furnace body with an inert gas of 6-15 MPa; step D, by means of the injector, injecting a phosphorus gas into the indium melt to obtain a phosphorus-rich indium-phosphorus melt; step E, growing a crystal; and step F, after completion of the crystal growth, annealing the crystal in an in-situ annealing device to complete the preparation of semi-insulated indium phosphide.
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulated indium phosphide preparation device with in-situ annealing
No layer stack recorded.
Materials described outside the worked examples.
indium
In
boron oxide
B₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hydrogen pressure in step B | 0.02–0.3 MPa | H₂ |
hydrogen hold time in step B | 1–5 hours |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,559,861 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of one of preparation devices;
FIG. 2 is a structure diagram of an injection lifting rod;
FIG. 3 is a schematic view of in-situ annealing assembly;
FIG. 4 is a structure diagram of a lifting rod;
FIG. 5 is a schematic view of a fixing structure for a lower seal cover;
FIG. 6 is a structure diagram of a drive rod and a fixing structure thereof;
FIG. 7 is a structure diagram of an upper seal cover;
FIG. 8 is a structure diagram of a seed crystal rod;
FIG. 9 is a schematic view of hydrogen treatment on an 45 indium melt;
FIG. 10 is a schematic view of injection synthesis; and
FIG. 11 is a schematic view of crystal growth. In which, 1: main furnace body; 1-1: chassis; 2: upper furnace body; 3: seed crystal rod; 3-1: auxiliary seed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation device of semi-insulated indium phos-phide, comprising a furnace body, a crucible and a heating and supporting system disposed in the furnace body, a seed crystal rod passing through the furnace body, wherein a hydrogen gas tube, an inert gas tube, and an exhaust tube are disposed on a side face of the furnace body; an injector is disposed in the furnace body, and an injection lifting rod connected to the injector protrudes from the furnace body so as to be connected to a driving device; and an in-situ annealing device is also disposed in the furnace body; the in-situ annealing device comprises an upper seal cover, an upper seal cover driving device, a lower seal cover, and a lower seal cover driving device; a lower part of the upper seal cover is open to form an upper seal cover main body, an upper part of the lower seal cover is open, an upper seal cover heating wire is disposed outside the upper seal cover main body, and a lower seal cover heating wire is disposed outside the upper opening of the lower seal cover; and driven by the upper seal cover driving device and the lower seal cover driving device, the seal cover main body is partially overlapped with the upper opening of the lower seal cover to form an annealing space.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein an injector heating wire is disposed surrounding the injector, and the injection tube communicates the injector with the inner space of the furnace body.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein the upper seal cover driving device comprises a lifting rod connected to a driving mechanism outside the furnace body and a lifting rod support connected to the lifting rod, the lifting rod support is connected to the upper seal cover, and the lifting rod drives the upper seal cover to move up and down; the lower seal cover driving device comprises a drive rod connected to the driving mechanism, the drive rod is connected to the lower seal cover, and the drive rod drives the lower seal cover to move left and right; a storage chamber is disposed inside the furnace body, and thea space size of the storage chamber is set according to the lower seal cover; and the drive rod drives the lower seal cover to recess into and extend from the storage chamber.
A preparation method of semi-insulated indium phos-phide, completed based on the preparation device of semiinsulated indium phosphide according to claim 1, wherein the method comprises the following steps: step A, heating indium to form an indium melt; step B, filling the furnace body with hydrogen of 0.02-0.3 MPa and holding pressure for 1-5 hours, so that hydro-gen atoms are dissolved into the indium melt; and covering the surface of the melt with liquid boron oxide; step C, filling the furnace body with an inert gas of 6-15 MPa; step D, by means of the injector, injecting a phosphorus gas into the indium melt to obtain a phosphorus-rich indium-phosphorus melt; step E, growing a crystal; and step F, after completion of the crystal growth, annealing the crystal in an in-situ annealing device to complete the preparation of semi-insulated indium phosphide.
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulated indium phosphide preparation device with in-situ annealing
No layer stack recorded.
Materials described outside the worked examples.
indium
In
boron oxide
B₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hydrogen pressure in step B | 0.02–0.3 MPa | H₂ |
hydrogen hold time in step B | 1–5 hours |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,559,861 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of one of preparation devices;
FIG. 2 is a structure diagram of an injection lifting rod;
FIG. 3 is a schematic view of in-situ annealing assembly;
FIG. 4 is a structure diagram of a lifting rod;
FIG. 5 is a schematic view of a fixing structure for a lower seal cover;
FIG. 6 is a structure diagram of a drive rod and a fixing structure thereof;
FIG. 7 is a structure diagram of an upper seal cover;
FIG. 8 is a structure diagram of a seed crystal rod;
FIG. 9 is a schematic view of hydrogen treatment on an 45 indium melt;
FIG. 10 is a schematic view of injection synthesis; and
FIG. 11 is a schematic view of crystal growth. In which, 1: main furnace body; 1-1: chassis; 2: upper furnace body; 3: seed crystal rod; 3-1: auxiliary seed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation device of semi-insulated indium phos-phide, comprising a furnace body, a crucible and a heating and supporting system disposed in the furnace body, a seed crystal rod passing through the furnace body, wherein a hydrogen gas tube, an inert gas tube, and an exhaust tube are disposed on a side face of the furnace body; an injector is disposed in the furnace body, and an injection lifting rod connected to the injector protrudes from the furnace body so as to be connected to a driving device; and an in-situ annealing device is also disposed in the furnace body; the in-situ annealing device comprises an upper seal cover, an upper seal cover driving device, a lower seal cover, and a lower seal cover driving device; a lower part of the upper seal cover is open to form an upper seal cover main body, an upper part of the lower seal cover is open, an upper seal cover heating wire is disposed outside the upper seal cover main body, and a lower seal cover heating wire is disposed outside the upper opening of the lower seal cover; and driven by the upper seal cover driving device and the lower seal cover driving device, the seal cover main body is partially overlapped with the upper opening of the lower seal cover to form an annealing space.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein an injector heating wire is disposed surrounding the injector, and the injection tube communicates the injector with the inner space of the furnace body.
The preparation device of semi-insulated indium phos-phide according to claim 1, wherein the upper seal cover driving device comprises a lifting rod connected to a driving mechanism outside the furnace body and a lifting rod support connected to the lifting rod, the lifting rod support is connected to the upper seal cover, and the lifting rod drives the upper seal cover to move up and down; the lower seal cover driving device comprises a drive rod connected to the driving mechanism, the drive rod is connected to the lower seal cover, and the drive rod drives the lower seal cover to move left and right; a storage chamber is disposed inside the furnace body, and thea space size of the storage chamber is set according to the lower seal cover; and the drive rod drives the lower seal cover to recess into and extend from the storage chamber.
A preparation method of semi-insulated indium phos-phide, completed based on the preparation device of semiinsulated indium phosphide according to claim 1, wherein the method comprises the following steps: step A, heating indium to form an indium melt; step B, filling the furnace body with hydrogen of 0.02-0.3 MPa and holding pressure for 1-5 hours, so that hydro-gen atoms are dissolved into the indium melt; and covering the surface of the melt with liquid boron oxide; step C, filling the furnace body with an inert gas of 6-15 MPa; step D, by means of the injector, injecting a phosphorus gas into the indium melt to obtain a phosphorus-rich indium-phosphorus melt; step E, growing a crystal; and step F, after completion of the crystal growth, annealing the crystal in an in-situ annealing device to complete the preparation of semi-insulated indium phosphide.
Layer stacks claimed or described, ordered top of device to substrate.
semi-insulated indium phosphide preparation device with in-situ annealing
No layer stack recorded.
Materials described outside the worked examples.
indium
In
boron oxide
B₂O₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hydrogen pressure in step B | 0.02–0.3 MPa | H₂ |
hydrogen hold time in step B | 1–5 hours |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
semi-insulated indium phosphide
InP
red phosphorus
P
hydrogen
H₂
inert gas
inert gas pressure in step C | 6–15 MPa | inert gas |
annealing temperature in step F | 850–980 °C | InP |
annealing constant temperature duration in step F | 10–200 hours | InP |
annealing temperature ramp rate in step F | 10 °C/hour | InP |
furnace vacuum level before sealing in step F-1 | 0.001 Pa | — |
Pressure | 3-1 pa | — |
Temperature | 1100–1300 °C | — |
Pressure | 0.02–0.1 MPa | — |
Thickness | 5–10 mm | — |
Temperature | 10–50 °C | — |
Cited non-patent literature · 2
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS
semi-insulated indium phosphide
InP
red phosphorus
P
hydrogen
H₂
inert gas
inert gas pressure in step C | 6–15 MPa | inert gas |
annealing temperature in step F | 850–980 °C | InP |
annealing constant temperature duration in step F | 10–200 hours | InP |
annealing temperature ramp rate in step F | 10 °C/hour | InP |
furnace vacuum level before sealing in step F-1 | 0.001 Pa | — |
Pressure | 3-1 pa | — |
Temperature | 1100–1300 °C | — |
Pressure | 0.02–0.1 MPa | — |
Thickness | 5–10 mm | — |
Temperature | 10–50 °C | — |
Cited non-patent literature · 2
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS
semi-insulated indium phosphide
InP
red phosphorus
P
hydrogen
H₂
inert gas
inert gas pressure in step C | 6–15 MPa | inert gas |
annealing temperature in step F | 850–980 °C | InP |
annealing constant temperature duration in step F | 10–200 hours | InP |
annealing temperature ramp rate in step F | 10 °C/hour | InP |
furnace vacuum level before sealing in step F-1 | 0.001 Pa | — |
Pressure | 3-1 pa | — |
Temperature | 1100–1300 °C | — |
Pressure | 0.02–0.1 MPa | — |
Thickness | 5–10 mm | — |
Temperature | 10–50 °C | — |
Cited non-patent literature · 2
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS
semi-insulated indium phosphide
InP
red phosphorus
P
hydrogen
H₂
inert gas
inert gas pressure in step C | 6–15 MPa | inert gas |
annealing temperature in step F | 850–980 °C | InP |
annealing constant temperature duration in step F | 10–200 hours | InP |
annealing temperature ramp rate in step F | 10 °C/hour | InP |
furnace vacuum level before sealing in step F-1 | 0.001 Pa | — |
Pressure | 3-1 pa | — |
Temperature | 1100–1300 °C | — |
Pressure | 0.02–0.1 MPa | — |
Thickness | 5–10 mm | — |
Temperature | 10–50 °C | — |
Cited non-patent literature · 2
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS
