Patent
US 9,368,622Stitched Gate GaN HEMTs
Karim S. Boutros
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,368,622Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1: Structure of prior art HEMTs showing monolithic gates. 15
Figure 2 Structure illustrating an embodiment of the present invention showing numerous subgates comprising the gate of the device.
Figure 3 Example of subgate profiles (a-d) and top views (e-g).
Figure 4: Top view of a HEMT using numerous subgates and the section A-A shown in figure 5.
Figure 5: Section A-A view of HEMT device showing a subgate. 20 [0008] The following papers are incorporated by reference as though fully set forth herein:
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A HEM T device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates are electrically connected into at least one group; and wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in cash row that when the sub ate is projected tivataTd permendicula] y relative to the adjace=t row projection of the subgate wou kd overlap with at least one subgate and an opening beiween subg ates in the adjacent row.
The device of claim 1 wherein the subgates are in rows separated by approximately 0.1 micrometer and each subgate has an area, when viewed from above, that is at least the area of a 0.05 micrometer radius circle.
The device of claim 1 wherein the subgates are electrically connected with a field plate.
The device of claim 1 wherein the channel layer comprises a Group I II-V material.
The device of claim 1 wherein the channel layer comprises GaN.
The device of claim 1, wherein each row defines a first gap between subgates in the row, the gap being misaligned with a second gap in the adjacent row.
The device of claim 1, wherein each row includes at least three subgates.
The device of claim 1, wherein each row includes at least four subgates.
The device of claim 1, wherein each row extends along a direction, and each subgate extends along the direction beyond an adjacent subgate in an adjacent row.
The device of claim 1, wherein the projection of the subgate would overlap with at least two subgates and an opening between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least two subgates in each row that when the two subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the two subgates would overlap with at least three subgates and two openings between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least three subgates in each row that when the three subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the three subgates would overlap with at least five subgates and three openings between subgates in the adjacent row. -4-
canceled
A H E MT device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the source has a length and the source is spaced apart from the drain by a -2- width; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in each row that when tie subgate is projected toward and perpendicularly relative to the adjacent row, the projection of the subgate wouldoverlap xwi i at least one su bgate and an oenig b etween subgates iin the adjacent row; wherein the plurality of rows are disposed between the source and the drain.
Layer stacks claimed or described, ordered top of device to substrate.
HEMT (High Electron Mobility Transistor) with stitched subgate array
Materials described outside the worked examples.
GaN
barrier layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,368,622Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1: Structure of prior art HEMTs showing monolithic gates. 15
Figure 2 Structure illustrating an embodiment of the present invention showing numerous subgates comprising the gate of the device.
Figure 3 Example of subgate profiles (a-d) and top views (e-g).
Figure 4: Top view of a HEMT using numerous subgates and the section A-A shown in figure 5.
Figure 5: Section A-A view of HEMT device showing a subgate. 20 [0008] The following papers are incorporated by reference as though fully set forth herein:
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A HEM T device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates are electrically connected into at least one group; and wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in cash row that when the sub ate is projected tivataTd permendicula] y relative to the adjace=t row projection of the subgate wou kd overlap with at least one subgate and an opening beiween subg ates in the adjacent row.
The device of claim 1 wherein the subgates are in rows separated by approximately 0.1 micrometer and each subgate has an area, when viewed from above, that is at least the area of a 0.05 micrometer radius circle.
The device of claim 1 wherein the subgates are electrically connected with a field plate.
The device of claim 1 wherein the channel layer comprises a Group I II-V material.
The device of claim 1 wherein the channel layer comprises GaN.
The device of claim 1, wherein each row defines a first gap between subgates in the row, the gap being misaligned with a second gap in the adjacent row.
The device of claim 1, wherein each row includes at least three subgates.
The device of claim 1, wherein each row includes at least four subgates.
The device of claim 1, wherein each row extends along a direction, and each subgate extends along the direction beyond an adjacent subgate in an adjacent row.
The device of claim 1, wherein the projection of the subgate would overlap with at least two subgates and an opening between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least two subgates in each row that when the two subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the two subgates would overlap with at least three subgates and two openings between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least three subgates in each row that when the three subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the three subgates would overlap with at least five subgates and three openings between subgates in the adjacent row. -4-
canceled
A H E MT device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the source has a length and the source is spaced apart from the drain by a -2- width; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in each row that when tie subgate is projected toward and perpendicularly relative to the adjacent row, the projection of the subgate wouldoverlap xwi i at least one su bgate and an oenig b etween subgates iin the adjacent row; wherein the plurality of rows are disposed between the source and the drain.
Layer stacks claimed or described, ordered top of device to substrate.
HEMT (High Electron Mobility Transistor) with stitched subgate array
Materials described outside the worked examples.
GaN
barrier layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,368,622Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1: Structure of prior art HEMTs showing monolithic gates. 15
Figure 2 Structure illustrating an embodiment of the present invention showing numerous subgates comprising the gate of the device.
Figure 3 Example of subgate profiles (a-d) and top views (e-g).
Figure 4: Top view of a HEMT using numerous subgates and the section A-A shown in figure 5.
Figure 5: Section A-A view of HEMT device showing a subgate. 20 [0008] The following papers are incorporated by reference as though fully set forth herein:
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A HEM T device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates are electrically connected into at least one group; and wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in cash row that when the sub ate is projected tivataTd permendicula] y relative to the adjace=t row projection of the subgate wou kd overlap with at least one subgate and an opening beiween subg ates in the adjacent row.
The device of claim 1 wherein the subgates are in rows separated by approximately 0.1 micrometer and each subgate has an area, when viewed from above, that is at least the area of a 0.05 micrometer radius circle.
The device of claim 1 wherein the subgates are electrically connected with a field plate.
The device of claim 1 wherein the channel layer comprises a Group I II-V material.
The device of claim 1 wherein the channel layer comprises GaN.
The device of claim 1, wherein each row defines a first gap between subgates in the row, the gap being misaligned with a second gap in the adjacent row.
The device of claim 1, wherein each row includes at least three subgates.
The device of claim 1, wherein each row includes at least four subgates.
The device of claim 1, wherein each row extends along a direction, and each subgate extends along the direction beyond an adjacent subgate in an adjacent row.
The device of claim 1, wherein the projection of the subgate would overlap with at least two subgates and an opening between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least two subgates in each row that when the two subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the two subgates would overlap with at least three subgates and two openings between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least three subgates in each row that when the three subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the three subgates would overlap with at least five subgates and three openings between subgates in the adjacent row. -4-
canceled
A H E MT device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the source has a length and the source is spaced apart from the drain by a -2- width; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in each row that when tie subgate is projected toward and perpendicularly relative to the adjacent row, the projection of the subgate wouldoverlap xwi i at least one su bgate and an oenig b etween subgates iin the adjacent row; wherein the plurality of rows are disposed between the source and the drain.
Layer stacks claimed or described, ordered top of device to substrate.
HEMT (High Electron Mobility Transistor) with stitched subgate array
Materials described outside the worked examples.
GaN
barrier layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,368,622Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1: Structure of prior art HEMTs showing monolithic gates. 15
Figure 2 Structure illustrating an embodiment of the present invention showing numerous subgates comprising the gate of the device.
Figure 3 Example of subgate profiles (a-d) and top views (e-g).
Figure 4: Top view of a HEMT using numerous subgates and the section A-A shown in figure 5.
Figure 5: Section A-A view of HEMT device showing a subgate. 20 [0008] The following papers are incorporated by reference as though fully set forth herein:
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A HEM T device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates are electrically connected into at least one group; and wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in cash row that when the sub ate is projected tivataTd permendicula] y relative to the adjace=t row projection of the subgate wou kd overlap with at least one subgate and an opening beiween subg ates in the adjacent row.
The device of claim 1 wherein the subgates are in rows separated by approximately 0.1 micrometer and each subgate has an area, when viewed from above, that is at least the area of a 0.05 micrometer radius circle.
The device of claim 1 wherein the subgates are electrically connected with a field plate.
The device of claim 1 wherein the channel layer comprises a Group I II-V material.
The device of claim 1 wherein the channel layer comprises GaN.
The device of claim 1, wherein each row defines a first gap between subgates in the row, the gap being misaligned with a second gap in the adjacent row.
The device of claim 1, wherein each row includes at least three subgates.
The device of claim 1, wherein each row includes at least four subgates.
The device of claim 1, wherein each row extends along a direction, and each subgate extends along the direction beyond an adjacent subgate in an adjacent row.
The device of claim 1, wherein the projection of the subgate would overlap with at least two subgates and an opening between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least two subgates in each row that when the two subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the two subgates would overlap with at least three subgates and two openings between subgates in the adjacent row.
The device of claim 1, wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there are least three subgates in each row that when the three subgates are projected toward and perpendicularly relative to the adjacent row, the projection of the three subgates would overlap with at least five subgates and three openings between subgates in the adjacent row. -4-
canceled
A H E MT device comprising: a channel layer and a barrier layer; a source, gate and drain disposed on the barrier layer; wherein the source has a length and the source is spaced apart from the drain by a -2- width; wherein the gate comprises a plurality of physically distinct subgates arranged in a plurality of rows, each row having a plurality of subgates; wherein the subgates in each row are staggered relative to an adjacent row of subgates such that there is at least one subgate in each row that when tie subgate is projected toward and perpendicularly relative to the adjacent row, the projection of the subgate wouldoverlap xwi i at least one su bgate and an oenig b etween subgates iin the adjacent row; wherein the plurality of rows are disposed between the source and the drain.
Layer stacks claimed or described, ordered top of device to substrate.
HEMT (High Electron Mobility Transistor) with stitched subgate array
Materials described outside the worked examples.
GaN
barrier layer
Related documents with shared materials, methods, properties, or citations.
InGaN
AlInGaN
AlN
AlInN
AlGaN
InGaN
AlInGaN
AlN
AlInN
AlGaN
InGaN
AlInGaN
AlN
AlInN
AlGaN
InGaN
AlInGaN
AlN
AlInN
AlGaN