SEMICONDUCTOR DEVICE INCLUDING GAN-BASED COMPOUND SEMICONDUCTOR STACKED LAYER AND METHOD FOR PRODUCING THE SAME

Yu Saitoh

Patent

Atlas literature

Patent

US 8,981,428

SEMICONDUCTOR DEVICE INCLUDING GAN-BASED COMPOUND SEMICONDUCTOR STACKED LAYER AND METHOD FOR PRODUCING THE SAME

Yu Saitoh

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 12 dependent

1
Independentn-type drift layer (GaN-based)n-type contact layer (GaN-based)p-type barrier layer (GaN-based)GaN-based compound semiconductor MOSFET/transistor
A semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a ﬁrst conductivity-type drift layer, a second conductivity-type barrier layer located on the ﬁrst conductivity-type drift layer, and a ﬁrst conductivity-type contact layer located on the second conductivity-type barrier layer, the GaN-based stacked layer having an opening that extends from the ﬁrst conductivity-type contact layer and reaches the ﬁrst conductivity-type drift layer through the second conductivity-type barrier layer, the semiconductor device comprising: a regrown layer located so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; an insulating layer located so as to cover the regrown layer; a source electrode located on the GaN-based stacked layer; a gate electrode located on the insulating layer; and a drain electrode located on any one of ﬁrst conductivity-type regions that are present opposite the ﬁrst conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm -3) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9z wherein the ﬁrst conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode. 2 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432851.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white
1. 2
  Dependent← claim 1p-type barrier layer (GaN-based)GaN-based compound semiconductor MOSFET/transistor
  The semiconductor device according to Claim 1, wherein, in the second conductivity-type barrier layer, the second conductivity-type impurity concentration A (cm⁻³) and the hydrogen concentration B (cm⁻³) satisfy 0.5 < B/A < 0.9.
2. 3
  Dependent← claim 1p-type barrier layer (GaN-based)GaN-based compound semiconductor MOSFET/transistor
  The semiconductor device according to Claim 1, wherein, in the second conductivity-type barrier layer, the second conductivity-type impurity concentration A (cm⁻³) and the hydrogen concentration B (cm⁻³) satisfy 0.7 < B/A < 0.9.
3. 4
  Dependent← claim 1p-type barrier layer (GaN-based)MgGaN-based compound semiconductor MOSFET/transistor
  The semiconductor device according to Claim 1, wherein the ﬁrst conductivity-type is an n-type, the second conductivity-type is a p-type, and a p-type impurity contained in the p-type barrier layer is magnesium (Mg).
4. 8
  Dependent← claim 1InGaNAlGaNGaNAlGaNAlNGaN-based compound semiconductor MOSFET/transistor
  The semiconductor device according to Claim 1, wherein a combination of the channel layer and carrier supply layer is one of combinations selected from an InGaN layer and an AlGaN layer, a GaN layer and an AlGaN layer, and an AlGaN layer and A lN.
5. 9
  Dependent← claim 1GaNAlxGa₁-xNGaN-based compound semiconductor MOSFET/transistor
  The semiconductor device according to Claim 1, wherein the channel layer is an undoped GaN layer having a thickness of 20 nm or more and 400 nm or less, and the carrier supply layer is an A lxGaix N (0 < x < 1) layer having a thickness of 5 nm or more and 40 nm or less.
10
Independentn-type drift layer (GaN-based)n-type contact layer (GaN-based)p-type barrier layer (GaN-based)GaN-based compound semiconductor MOSFET/transistor
A method for producing a semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a ﬁrst conductivity-type drift layer, a second conductivity-type barrier layer located on the ﬁrst conductivity-type drift layer, and a ﬁrst conductivity-type contact layer located on the second conductivity-type barrier layer, the method comprising a step of forming an opening in the GaN- based stacked layer by reactive ion etching (RIE) so that the opening extends from the ﬁrst conductivity-type contact layer and reaches the ﬁrst conductivity-type drift layer through the second conductivity-type barrier layer; 4 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432853.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white a step of forming a regrown layer so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; a step of forming an insulating layer so as to cover the regrown layer; and a step of forming a source electrode on the GaN-based stacked layer, forming a gate electrode on the insulating layer, and forming a drain electrode on any one of ﬁrst conductivity-type regions that are present opposite the ﬁrst conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in formation of the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm⁻³) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9 1 wherein the ﬁrst conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode.
1. 11
  Dependent← claim 10p-type barrier layer (GaN-based)
  The method for producing a semiconductor device according to Claim 10, wherein, in the formation of the second conductivity-type barrier layer, the second conductivity-type impurity concentration A (cm⁻³) and the hydrogen concentration B (cm⁻³) satisfy 0.5 < B/A< 0.9.
2. 12
  Dependent← claim 10p-type barrier layer (GaN-based)
  The method for producing a semiconductor device according to Claim 10, wherein, in the formation of the second conductivity-type barrier layer, the second 5 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432854.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white conductivity-type impurity concentration A (cm⁻³) and the hydrogen concentration B (cm⁻³) satisfy 0.7 < B/A < 0.9.
3. 13
  Dependent← claim 10p-type barrier layer (GaN-based)Mgcyclopentadienyl magnesium (Cp₂Mg) MOCVD precursor
  The method for producing a semiconductor device according to Claim 10, wherein the ﬁrst conductivity-type is an n-type; the second conductivity-type is a p- type; and the p-type barrier layer is grown by MOCVD using high-purity ammonia as a nitrogen raw material, puriﬁed hydrogen as a carrier gas, and cyclopentadienyl magnesium as a raw material for a p-type impurity.
4. 14
  Dependent← claim 10GaNAlGaN
  The method for producing a semiconductor of forming the regrown layer after the opening is is performed in an (ammonia + hydrogen) and an undoped AlGaN carrier supply layer are nitrogen raw material and puriﬁed hydrogen as a device according to Claim 10, wherein, in the step formed by reactive ion etching, thermal cleaning atmosphere, and then an undoped GaN channel layer grown by MOCVD using high-purity ammonia as a carrier gas. 6

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based compound semiconductor MOSFET/transistor

AlxGa₁-xNcarrier supply layer

GaNchannel layer

n-type contact layer (GaN-based)contact layer

p-type barrier layer (GaN-based)barrier layer

n-type drift layer (GaN-based)drift layer

Materials

Materials described outside the worked examples.

n-type drift layer (GaN-based)

Drift Layer

n-type contact layer (GaN-based)

Contact Layer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

SEMICONDUCTOR DEVICE INCLUDING GAN-BASED COMPOUND SEMICONDUCTOR STACKED LAYER AND METHOD FOR PRODUCING THE SAME | Matter42 Literature