Patent
US 8,318,042SYSTEMS, METHODS AND SOLUTIONS FOR CHEMICAL POLISHING OF GaAs WAFERS
Tan Kaixie
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,318,042Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemical polishing solution for chemical polishing gallium arsenide (GaAs) wafers comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents.
The chemical polishing solution of claim 1, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing solution of claim 1, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing solution of claim 1, further comprising one or more solvents.
- 4. canceled
canceled
canceled
The chemical polishing solution of claim 14, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing solution of claim [[14]] 8, wherein the one or more solvents is water.
(withdrawn-currently amended) A chemical polishing method for performing chemical polishing of a gallium arsenide (GaAs) crystal wafer, comprising: polishing the wafer in a chemical polishing apparatus in the presence of the chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The method of claim 10, wherein the chemical polishing solution further comprising one or more solvents. withdrawn
- 13. canceled
canceled
(withdrawn-currently amended) A system for chemical-mechanical polishing of GaAs crystal wafers, the system comprising: a platform for holding a GaAs wafer; a polishing pad to contact the wafer; and a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The system of claim 15, wherein the total percentage by weight of the alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The system of claim 15, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the potassium carbonate, and the alkali metal sulfonate
(withdrawn-currently amended) A gallium arsenide wafer having flatness characteristics including a total thickness variation of less than about 7 micrometers, a WARP of less than about 10 micrometers, and a BOW (bend of wafer) of less than about 5 micrometers, the wafer being produced by a process of: performing chemical-mechanical rough polishing of the wafer; and performing a fine polishing process on the wafer in the presence of a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents; wherein the flatness characteristics are maintained via polishing with the fine polishing solution, which provides for yield of wafers achieving the flatness characteristics of greater than or equal to 90% at an average fine polishing removal rate -4- Appin. No.: 12/569,870 PATENT Amendment/Response filed Attorney Docket No. 338221-991260 replying to Office action of for gallium arsenide material from the wafers of greater than about 0.6 micrometers/minute. withdrawn
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing sel uti GR method of claim 18, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate, the alkali metal carbonate is sodium carbonate, the alkali metal bicarbonate is sodium bicarbonate, and the alkali metal sulfonate is sodium sulfonate.
The chemical polishing so luti on method of claim [[2]] 11, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing method of claim 20, wherein the one or more solvents is water.
canceled
The chemical polishing solution method of claim [[21]] 11, wherein the one or more solvents is water.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Chemical polishing of GaAs wafers using different chemical polishing solutions. Removal rate distribution, warp distribution, and BOW distribution were measured for examples with different solution compositions. Figures 2, 3, and 4 illustrate removal rate, warp, and BOW distributions respectively.
Layer stacks claimed or described, ordered top of device to substrate.
chemical-mechanical polishing system for GaAs wafers
No layer stack recorded.
Materials described outside the worked examples.
sodium dichloroisocyanurate
potassium dichloroisocyanurate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Total Thickness Variation | ≤ 7 micrometers | GaAs |
Warp | ≤ 10 micrometers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,318,042Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemical polishing solution for chemical polishing gallium arsenide (GaAs) wafers comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents.
The chemical polishing solution of claim 1, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing solution of claim 1, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing solution of claim 1, further comprising one or more solvents.
- 4. canceled
canceled
canceled
The chemical polishing solution of claim 14, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing solution of claim [[14]] 8, wherein the one or more solvents is water.
(withdrawn-currently amended) A chemical polishing method for performing chemical polishing of a gallium arsenide (GaAs) crystal wafer, comprising: polishing the wafer in a chemical polishing apparatus in the presence of the chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The method of claim 10, wherein the chemical polishing solution further comprising one or more solvents. withdrawn
- 13. canceled
canceled
(withdrawn-currently amended) A system for chemical-mechanical polishing of GaAs crystal wafers, the system comprising: a platform for holding a GaAs wafer; a polishing pad to contact the wafer; and a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The system of claim 15, wherein the total percentage by weight of the alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The system of claim 15, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the potassium carbonate, and the alkali metal sulfonate
(withdrawn-currently amended) A gallium arsenide wafer having flatness characteristics including a total thickness variation of less than about 7 micrometers, a WARP of less than about 10 micrometers, and a BOW (bend of wafer) of less than about 5 micrometers, the wafer being produced by a process of: performing chemical-mechanical rough polishing of the wafer; and performing a fine polishing process on the wafer in the presence of a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents; wherein the flatness characteristics are maintained via polishing with the fine polishing solution, which provides for yield of wafers achieving the flatness characteristics of greater than or equal to 90% at an average fine polishing removal rate -4- Appin. No.: 12/569,870 PATENT Amendment/Response filed Attorney Docket No. 338221-991260 replying to Office action of for gallium arsenide material from the wafers of greater than about 0.6 micrometers/minute. withdrawn
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing sel uti GR method of claim 18, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate, the alkali metal carbonate is sodium carbonate, the alkali metal bicarbonate is sodium bicarbonate, and the alkali metal sulfonate is sodium sulfonate.
The chemical polishing so luti on method of claim [[2]] 11, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing method of claim 20, wherein the one or more solvents is water.
canceled
The chemical polishing solution method of claim [[21]] 11, wherein the one or more solvents is water.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Chemical polishing of GaAs wafers using different chemical polishing solutions. Removal rate distribution, warp distribution, and BOW distribution were measured for examples with different solution compositions. Figures 2, 3, and 4 illustrate removal rate, warp, and BOW distributions respectively.
Layer stacks claimed or described, ordered top of device to substrate.
chemical-mechanical polishing system for GaAs wafers
No layer stack recorded.
Materials described outside the worked examples.
sodium dichloroisocyanurate
potassium dichloroisocyanurate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Total Thickness Variation | ≤ 7 micrometers | GaAs |
Warp | ≤ 10 micrometers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,318,042Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemical polishing solution for chemical polishing gallium arsenide (GaAs) wafers comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents.
The chemical polishing solution of claim 1, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing solution of claim 1, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing solution of claim 1, further comprising one or more solvents.
- 4. canceled
canceled
canceled
The chemical polishing solution of claim 14, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing solution of claim [[14]] 8, wherein the one or more solvents is water.
(withdrawn-currently amended) A chemical polishing method for performing chemical polishing of a gallium arsenide (GaAs) crystal wafer, comprising: polishing the wafer in a chemical polishing apparatus in the presence of the chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The method of claim 10, wherein the chemical polishing solution further comprising one or more solvents. withdrawn
- 13. canceled
canceled
(withdrawn-currently amended) A system for chemical-mechanical polishing of GaAs crystal wafers, the system comprising: a platform for holding a GaAs wafer; a polishing pad to contact the wafer; and a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The system of claim 15, wherein the total percentage by weight of the alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The system of claim 15, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the potassium carbonate, and the alkali metal sulfonate
(withdrawn-currently amended) A gallium arsenide wafer having flatness characteristics including a total thickness variation of less than about 7 micrometers, a WARP of less than about 10 micrometers, and a BOW (bend of wafer) of less than about 5 micrometers, the wafer being produced by a process of: performing chemical-mechanical rough polishing of the wafer; and performing a fine polishing process on the wafer in the presence of a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents; wherein the flatness characteristics are maintained via polishing with the fine polishing solution, which provides for yield of wafers achieving the flatness characteristics of greater than or equal to 90% at an average fine polishing removal rate -4- Appin. No.: 12/569,870 PATENT Amendment/Response filed Attorney Docket No. 338221-991260 replying to Office action of for gallium arsenide material from the wafers of greater than about 0.6 micrometers/minute. withdrawn
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing sel uti GR method of claim 18, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate, the alkali metal carbonate is sodium carbonate, the alkali metal bicarbonate is sodium bicarbonate, and the alkali metal sulfonate is sodium sulfonate.
The chemical polishing so luti on method of claim [[2]] 11, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing method of claim 20, wherein the one or more solvents is water.
canceled
The chemical polishing solution method of claim [[21]] 11, wherein the one or more solvents is water.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Chemical polishing of GaAs wafers using different chemical polishing solutions. Removal rate distribution, warp distribution, and BOW distribution were measured for examples with different solution compositions. Figures 2, 3, and 4 illustrate removal rate, warp, and BOW distributions respectively.
Layer stacks claimed or described, ordered top of device to substrate.
chemical-mechanical polishing system for GaAs wafers
No layer stack recorded.
Materials described outside the worked examples.
sodium dichloroisocyanurate
potassium dichloroisocyanurate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Total Thickness Variation | ≤ 7 micrometers | GaAs |
Warp | ≤ 10 micrometers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,318,042Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemical polishing solution for chemical polishing gallium arsenide (GaAs) wafers comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents.
The chemical polishing solution of claim 1, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing solution of claim 1, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing solution of claim 1, further comprising one or more solvents.
- 4. canceled
canceled
canceled
The chemical polishing solution of claim 14, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing solution of claim [[14]] 8, wherein the one or more solvents is water.
(withdrawn-currently amended) A chemical polishing method for performing chemical polishing of a gallium arsenide (GaAs) crystal wafer, comprising: polishing the wafer in a chemical polishing apparatus in the presence of the chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The method of claim 10, wherein the chemical polishing solution further comprising one or more solvents. withdrawn
- 13. canceled
canceled
(withdrawn-currently amended) A system for chemical-mechanical polishing of GaAs crystal wafers, the system comprising: a platform for holding a GaAs wafer; a polishing pad to contact the wafer; and a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents. withdrawn
The system of claim 15, wherein the total percentage by weight of the alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The system of claim 15, wherein the alkali metal dichloroisocyanurate is sodium dichloroisocyan u rate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the potassium carbonate, and the alkali metal sulfonate
(withdrawn-currently amended) A gallium arsenide wafer having flatness characteristics including a total thickness variation of less than about 7 micrometers, a WARP of less than about 10 micrometers, and a BOW (bend of wafer) of less than about 5 micrometers, the wafer being produced by a process of: performing chemical-mechanical rough polishing of the wafer; and performing a fine polishing process on the wafer in the presence of a chemical polishing solution comprising about 35.2% of an alkali metal dichloroisocyan u rate or ammonium dichloroisocyan u rate, about 24.8% of an alkali metal acid pyrophosphate or ammonium pyrophosphate, about 21.6% of an alkali metal carbonate or ammonium carbonate, about 18.0% of an alkali metal bicarbonate or ammonium bicarbonate, and about 0.4% of an alkali metal sulfonate or ammonium sulfonate, based on a total wei g ht of 100%, excludin g any solvents; wherein the flatness characteristics are maintained via polishing with the fine polishing solution, which provides for yield of wafers achieving the flatness characteristics of greater than or equal to 90% at an average fine polishing removal rate -4- Appin. No.: 12/569,870 PATENT Amendment/Response filed Attorney Docket No. 338221-991260 replying to Office action of for gallium arsenide material from the wafers of greater than about 0.6 micrometers/minute. withdrawn
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the total percentage by weight of the alkali metal dichloroisocyanurate or ammonium dichloroisocyanurate, the alkali metal acid pyrophosphate or ammonium pyrophosphate, the alkali metal carbonate or ammonium carbonate, the alkali metal bicarbonate or ammonium bicarbonate, and the alkali metal sulfonate or ammonium sulfonate, is not higher than about 2% of the total weight of the solution.
The chemical polishing sel uti GR method of claim [[2]] 10, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate or potassium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate or potassium acid pyrophosphate, the alkali metal carbonate is sodium carbonate or potassium carbonate, the alkali metal bicarbonate is sodium bicarbonate or potassium carbonate, and the alkali metal sulfonate is sodium sulfonate or potassium sulfonate.
The chemical polishing sel uti GR method of claim 18, wherein the alkali metal dichloroisocyan u rate is sodium dichloroisocyanurate, the alkali metal acid pyrophosphate is sodium acid pyrophosphate, the alkali metal carbonate is sodium carbonate, the alkali metal bicarbonate is sodium bicarbonate, and the alkali metal sulfonate is sodium sulfonate.
The chemical polishing so luti on method of claim [[2]] 11, wherein the one or more solvents is an aqueous solvent, an alcoholic solvent, ketone solvent, ether solvent or a halogenated solvent.
The chemical polishing method of claim 20, wherein the one or more solvents is water.
canceled
The chemical polishing solution method of claim [[21]] 11, wherein the one or more solvents is water.
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials1 process step
Chemical polishing of GaAs wafers using different chemical polishing solutions. Removal rate distribution, warp distribution, and BOW distribution were measured for examples with different solution compositions. Figures 2, 3, and 4 illustrate removal rate, warp, and BOW distributions respectively.
Layer stacks claimed or described, ordered top of device to substrate.
chemical-mechanical polishing system for GaAs wafers
No layer stack recorded.
Materials described outside the worked examples.
sodium dichloroisocyanurate
potassium dichloroisocyanurate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Total Thickness Variation | ≤ 7 micrometers | GaAs |
Warp | ≤ 10 micrometers |
Related documents with shared materials, methods, properties, or citations.
sodium acid pyrophosphate
potassium acid pyrophosphate
sodium carbonate
Na₂CO₃
potassium carbonate
K₂CO₃
sodium bicarbonate
NaHCO₃
sodium sulfonate
potassium sulfonate
solvent (aqueous, alcoholic, ketone, ether, or halogenated)
water
H₂O
gallium arsenide
GaAs
Bow | ≤ 5 micrometers | GaAs |
Fine Polishing Removal Rate | ≥ 0.6 micrometers/minute | GaAs |
Thickness | ≤ 7 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 0.6 µm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
sodium acid pyrophosphate
potassium acid pyrophosphate
sodium carbonate
Na₂CO₃
potassium carbonate
K₂CO₃
sodium bicarbonate
NaHCO₃
sodium sulfonate
potassium sulfonate
solvent (aqueous, alcoholic, ketone, ether, or halogenated)
water
H₂O
gallium arsenide
GaAs
Bow | ≤ 5 micrometers | GaAs |
Fine Polishing Removal Rate | ≥ 0.6 micrometers/minute | GaAs |
Thickness | ≤ 7 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 0.6 µm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
sodium acid pyrophosphate
potassium acid pyrophosphate
sodium carbonate
Na₂CO₃
potassium carbonate
K₂CO₃
sodium bicarbonate
NaHCO₃
sodium sulfonate
potassium sulfonate
solvent (aqueous, alcoholic, ketone, ether, or halogenated)
water
H₂O
gallium arsenide
GaAs
Bow | ≤ 5 micrometers | GaAs |
Fine Polishing Removal Rate | ≥ 0.6 micrometers/minute | GaAs |
Thickness | ≤ 7 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 0.6 µm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
sodium acid pyrophosphate
potassium acid pyrophosphate
sodium carbonate
Na₂CO₃
potassium carbonate
K₂CO₃
sodium bicarbonate
NaHCO₃
sodium sulfonate
potassium sulfonate
solvent (aqueous, alcoholic, ketone, ether, or halogenated)
water
H₂O
gallium arsenide
GaAs
Bow | ≤ 5 micrometers | GaAs |
Fine Polishing Removal Rate | ≥ 0.6 micrometers/minute | GaAs |
Thickness | ≤ 7 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 5 µm | — |
Thickness | ≥ 0.6 µm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications