Gallium Arsenide Radio Frequency Circuit and Millimeter Wave Front-End Module

Shao-Cheng Hsiao

Patent

Atlas literature

Patent

US 11,387,199

Gallium Arsenide Radio Frequency Circuit and Millimeter Wave Front-End Module

Shao-Cheng Hsiao

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

process tool top view

FIG. 1 is a schematic diagram o f a top view a millimeter wave front-end module according to an embodiment of the present application. [0010 [FI G. 2 is a …

FIG. 2

FIG. 2 is a functional bl ock diagram within a GaAs die 12 comprising a plurality of gallium arsenide (GaAs) radio frequency (RF) circuits 14 according to an …

FIG. 3

FIG. 3 is a schematic diagram o f the GaAs RF circuit 1 4 according to an embodiment of the present application. Th e G aAs R F circuit 1 4 comprises …

FIG. 4

FIG. 4 is a schematic diagram of a passive phase shifter. [0013 [

FIG. 5

FIG. 5 are schematic diagrams of a passive phase shifter 40 and an active phase shifter 50, respectively. The active phase shifter 50, as an embodiment, may be …

FIG. 6

FIG. 6 is a schematic diagram o f cross sectional views o f a GaAs RF circuit according to an embodiment of the present application. Detailed D esc ripti on …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 13 dependent

1
IndependentGaAsGaAs RF circuit
: A gallium arsenide (GaAs) radio frequency (R F) circuit, comprising: a power ampliﬁer or a low noise ampliﬁer; a ﬁrst transmit/receive (TR) switch, coupled to the power ampliﬁer or the low noise ampliﬁer, wherein the ﬁrst TR switch is fabricated by a p H EMT (Pseudomorphic High Electron Mobility Transistor) process; and a ﬁrst active phase shifter, coupled to the power ampliﬁer or the low noise ampliﬁer, wherein the ﬁrst active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process; wherein the GaAs R F circuit is formed within a GaAs die. Original
1. 2
  Dependent← claim 1GaAsGaAs RF circuit
  : The GaAs R F circuit of claim 1, wherein the ﬁrst active phase shifter comprises a plurality of variable gain ampliﬁers fabricated by the HB T process. Original
2. 3
  Dependent← claim 1GaAsGaAs RF circuit
  : The GaAs R F circuit of claim 1, further comprising a ﬁrst variable gain ampliﬁer, coupled to the power ampliﬁer or the low noise ampliﬁer. Original
3. 6
  Dependent← claim 1GaAsGaAs RF circuit
  : The GaAs R F circuit of claim 1, wherein the power ampliﬁer or the low noise ampliﬁer is fabricated by the p H EMT process. Original
4. 7
  Dependent← claim 1GaAsGaAs RF circuit
  : The GaAs R F circuit of claim 1, wherein the power ampliﬁer or the low noise ampliﬁer is fabricated by the HB T process. Original
5. 8
  Dependent← claim 1GaAsGaAs RF circuit
  : The GaAs R F circuit of claim 1, further comprising: a second active phase shifter, coupled to the power ampliﬁer or the low noise ampliﬁer wherein the second active phase shifter is fabricated by the HBT process; and a second TR switch, coupled to the power ampliﬁer and the low noise ampliﬁer, wherein the second TR switch is fabricated by the pHEMT process. Original
9
IndependentGaAsmillimeter wave front-end module
: A millimeter wave front-end module, comprising: a plurality of antennas, wherein a spacing between the plurality of antennas is less than or equal to a half of a wavelength corresponding to an operating frequency at which the millimeter wave front-end module operates; and a gallium arsenide (GaAs) die, disposed between the plurality of antennas, comprising a plurality of GaAs radio frequency (R F) circuits, each GaAs R F circuit comprising: a power ampliﬁer or a low noise ampliﬁer; a ﬁrst transmit/receive (TR) switch, coupled to the power ampliﬁer or the low noise ampliﬁer, wherein the ﬁrst TR switch is fabricated by a pH EMT (Pseudomorphic High Electron Mobility Transistor) process; and a ﬁrst active phase shifter, coupled to the power ampliﬁer or the low noise ampliﬁer, wherein the ﬁrst active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process; wherein a GaAs R F circuit is coupled to an antenna. Currently amended
1. 10
  Dependent← claim 9GaAsmillimeter wave front-end module
  : The millimeter wave front-end module of claim 9, wherein the ﬁrst active phase shifter comprises a plurality of variable gain ampliﬁers fabricated by the H BT process. Original
2. 11
  Dependent← claim 9GaAsmillimeter wave front-end module
  : The millimeter wave front-end module of claim 9, wherein the each GaAs RF circuit further comprises a ﬁrst variable gain ampliﬁer, coupled to the power ampliﬁer or the low noise ampliﬁer. Original
3. 14
  Dependent← claim 9GaAsmillimeter wave front-end module
  : The millimeter wave front-end module of claim 9, wherein the power ampliﬁer or the low noise ampliﬁer is fabricated by the pHEMT process. Original
4. 15
  Dependent← claim 9GaAsmillimeter wave front-end module
  : The millimeter wave front-end module of claim 9, wherein the power ampliﬁer or the low noise ampliﬁer is fabricated by the HB T process. Original
5. 16
  Dependent← claim 9GaAsmillimeter wave front-end module
  : The millimeter wave front-end module of claim 9, wherein the each GaAs RF circuit further comprises: a second active phase shifter, coupled to the power ampliﬁer or the low noise ampliﬁer wherein the second active phase shifter is fabricated by the HBT process; and a second TR switch, coupled to the power ampliﬁer and the low noise ampliﬁer, wherein the second TR switch is fabricated by the p H EMT process. Original
12
IndependentGaAsmillimeter wave front-end module
: The millimeter wave front-end module of claim I1, wherein the ﬁrst variable gain ampliﬁer is fabricated by the HBT process. Original

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaAs RF circuit

GaAsdie substrate

millimeter wave front-end module

GaAsGaAs die substrate

Materials

Materials described outside the worked examples.

Gallium Arsenide

GaAs

Semiconductor Substrate/Die Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Gallium Arsenide Radio Frequency Circuit and Millimeter Wave Front-End Module | Matter42 Literature