Patent
US 10,877,194Tunable graphene-based infrared reflectance filter
Thomas Edwin Beechem III
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,877,194Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
FIGS. 5(a)-5(d) are maps of the real part of the y-component of the electric field near the graphene in one period of the second filter. Rectangles represent the …
FIG. 6 is a simulated reflectance map for a filter assuming ideal behavior. Black dots track the location of minima.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A tunable graphene-based infrared reflectance filter, com pris i ng: a substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a conductive nanoantenna layer on the top dielectric layer, wherein the conductive nanoantenna layer is patterned to excite plasmons within the graphene layer and wherein the conductive nanoantenna layer is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the conductive nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises a conductive substrate, thereby providing a backgate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises an insulating substrate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a conductive oxide, polymer, or other conductive non-metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
: A tunable graphene-based infrared reflectance filter, comprising: a conductive substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a nanoantenna layer on the top dielectric layer, wherein the nanoantenna layer is patterned to excite plasmons within the graphene layer; and wherein the conductive substrate is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a conductive nanoantenna adapted to apply a bias voltage to the graphene layer, thereby providing a dual- gated infrared reflectance filter. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
Exemplary filter with degenerately doped silicon substrate, 150 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.2 µm period and 100 nm gap over approximately 60×60 µm2 area.
5 materials
Exemplary filter with degenerately doped silicon substrate, 600 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.6 µm period and 100 nm gap over approximately 60×60 µm2 area.
Layer stacks claimed or described, ordered top of device to substrate.
tunable graphene-based infrared reflectance filter (top-gate via conductive nanoantenna)
tunable graphene-based infrared reflectance filter (backgate via conductive substrate)
Materials described outside the worked examples.
conductive nanoantenna
metal
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reflected amplitude variation | >15% % | — |
resonance position shift | ≥ 90 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,877,194Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
FIGS. 5(a)-5(d) are maps of the real part of the y-component of the electric field near the graphene in one period of the second filter. Rectangles represent the …
FIG. 6 is a simulated reflectance map for a filter assuming ideal behavior. Black dots track the location of minima.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A tunable graphene-based infrared reflectance filter, com pris i ng: a substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a conductive nanoantenna layer on the top dielectric layer, wherein the conductive nanoantenna layer is patterned to excite plasmons within the graphene layer and wherein the conductive nanoantenna layer is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the conductive nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises a conductive substrate, thereby providing a backgate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises an insulating substrate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a conductive oxide, polymer, or other conductive non-metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
: A tunable graphene-based infrared reflectance filter, comprising: a conductive substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a nanoantenna layer on the top dielectric layer, wherein the nanoantenna layer is patterned to excite plasmons within the graphene layer; and wherein the conductive substrate is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a conductive nanoantenna adapted to apply a bias voltage to the graphene layer, thereby providing a dual- gated infrared reflectance filter. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
Exemplary filter with degenerately doped silicon substrate, 150 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.2 µm period and 100 nm gap over approximately 60×60 µm2 area.
5 materials
Exemplary filter with degenerately doped silicon substrate, 600 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.6 µm period and 100 nm gap over approximately 60×60 µm2 area.
Layer stacks claimed or described, ordered top of device to substrate.
tunable graphene-based infrared reflectance filter (top-gate via conductive nanoantenna)
tunable graphene-based infrared reflectance filter (backgate via conductive substrate)
Materials described outside the worked examples.
conductive nanoantenna
metal
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reflected amplitude variation | >15% % | — |
resonance position shift | ≥ 90 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,877,194Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
FIGS. 5(a)-5(d) are maps of the real part of the y-component of the electric field near the graphene in one period of the second filter. Rectangles represent the …
FIG. 6 is a simulated reflectance map for a filter assuming ideal behavior. Black dots track the location of minima.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A tunable graphene-based infrared reflectance filter, com pris i ng: a substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a conductive nanoantenna layer on the top dielectric layer, wherein the conductive nanoantenna layer is patterned to excite plasmons within the graphene layer and wherein the conductive nanoantenna layer is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the conductive nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises a conductive substrate, thereby providing a backgate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises an insulating substrate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a conductive oxide, polymer, or other conductive non-metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
: A tunable graphene-based infrared reflectance filter, comprising: a conductive substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a nanoantenna layer on the top dielectric layer, wherein the nanoantenna layer is patterned to excite plasmons within the graphene layer; and wherein the conductive substrate is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a conductive nanoantenna adapted to apply a bias voltage to the graphene layer, thereby providing a dual- gated infrared reflectance filter. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
Exemplary filter with degenerately doped silicon substrate, 150 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.2 µm period and 100 nm gap over approximately 60×60 µm2 area.
5 materials
Exemplary filter with degenerately doped silicon substrate, 600 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.6 µm period and 100 nm gap over approximately 60×60 µm2 area.
Layer stacks claimed or described, ordered top of device to substrate.
tunable graphene-based infrared reflectance filter (top-gate via conductive nanoantenna)
tunable graphene-based infrared reflectance filter (backgate via conductive substrate)
Materials described outside the worked examples.
conductive nanoantenna
metal
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reflected amplitude variation | >15% % | — |
resonance position shift | ≥ 90 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,877,194Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
FIGS. 5(a)-5(d) are maps of the real part of the y-component of the electric field near the graphene in one period of the second filter. Rectangles represent the …
FIG. 6 is a simulated reflectance map for a filter assuming ideal behavior. Black dots track the location of minima.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A tunable graphene-based infrared reflectance filter, com pris i ng: a substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a conductive nanoantenna layer on the top dielectric layer, wherein the conductive nanoantenna layer is patterned to excite plasmons within the graphene layer and wherein the conductive nanoantenna layer is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the conductive nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises a conductive substrate, thereby providing a backgate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the substrate comprises an insulating substrate. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the nanoantenna comprises a conductive oxide, polymer, or other conductive non-metal. Original
: The tunable graphene-based infrared reflectance filter of claim 1, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
: A tunable graphene-based infrared reflectance filter, comprising: a conductive substrate; a bottom dielectric layer on the substrate; an unpatterned graphene layer on the bottom dielectric layer; a top dielectric layer on the graphene layer; and a nanoantenna layer on the top dielectric layer, wherein the nanoantenna layer is patterned to excite plasmons within the graphene layer; and wherein the conductive substrate is adapted to apply a voltage bias to the graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the infrared reflectance filter to infrared light incident on the top surface of the nanoantenna layer. Currently amended
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a conductive nanoantenna adapted to apply a bias voltage to the graphene layer, thereby providing a dual- gated infrared reflectance filter. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the nanoantenna layer comprises a grating having a periodicity comparable to the wavelength of the incident infrared light. Previously presented
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises silicon dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises hafnium dioxide. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the top dielectric layer comprises silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina. Original
: The tunable graphene-based infrared reflectance filter of claim 13, wherein the wavelength of the incident infrared light is between 1 microns and 50 m icrons. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
Exemplary filter with degenerately doped silicon substrate, 150 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.2 µm period and 100 nm gap over approximately 60×60 µm2 area.
5 materials
Exemplary filter with degenerately doped silicon substrate, 600 nm SiO₂ bottom dielectric, CVD-grown transferred graphene, 20 nm HfO₂ top dielectric, and 50 nm thick gold grating nanoantenna with 1.6 µm period and 100 nm gap over approximately 60×60 µm2 area.
Layer stacks claimed or described, ordered top of device to substrate.
tunable graphene-based infrared reflectance filter (top-gate via conductive nanoantenna)
tunable graphene-based infrared reflectance filter (backgate via conductive substrate)
Materials described outside the worked examples.
conductive nanoantenna
metal
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a schematic illustration of a tunable graphene-based infrared reflectance filter showing the various layers and the incident infrared beam. Graphene is …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
reflected amplitude variation | >15% % | — |
resonance position shift | ≥ 90 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
exemplary filter (1.2 µm period, 150 nm SiO2, degenerately doped Si substrate)
magnesium oxide
MgO
lead zirconium titanate
PZT
alumina
Al₂O₃
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
C |
Thickness | 1000–1100 cm | — |
— | 0.4–0.8 eV | — |
— | 0–0.9 eV | — |
Thickness | 1–60 µm | — |
Thickness | 6–18 µm | — |
Thickness | 1053-1 cm | — |
Thickness | 1–50 µm | — |
exemplary filter (1.2 µm period, 150 nm SiO2, degenerately doped Si substrate)
magnesium oxide
MgO
lead zirconium titanate
PZT
alumina
Al₂O₃
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
C |
Thickness | 1000–1100 cm | — |
— | 0.4–0.8 eV | — |
— | 0–0.9 eV | — |
Thickness | 1–60 µm | — |
Thickness | 6–18 µm | — |
Thickness | 1053-1 cm | — |
Thickness | 1–50 µm | — |
exemplary filter (1.2 µm period, 150 nm SiO2, degenerately doped Si substrate)
magnesium oxide
MgO
lead zirconium titanate
PZT
alumina
Al₂O₃
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
C |
Thickness | 1000–1100 cm | — |
— | 0.4–0.8 eV | — |
— | 0–0.9 eV | — |
Thickness | 1–60 µm | — |
Thickness | 6–18 µm | — |
Thickness | 1053-1 cm | — |
Thickness | 1–50 µm | — |
exemplary filter (1.2 µm period, 150 nm SiO2, degenerately doped Si substrate)
magnesium oxide
MgO
lead zirconium titanate
PZT
alumina
Al₂O₃
FIG. 2 is a graph of characteristic transport curves obtained from two devices during application of variable bias (VG) a cross the Hf O 2 dielectric with a …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 3(a) is a graph of simulated reflectance demonstrating the effects of each additional element. The graph labeled "Grating" shows the reflectance of the …
FIG. 4(e) is a graph of the measured and simulated differential reflectance between V G _ 1.75 V and -6 V and 0.4 and 0.7 eV respectively for the first filter …
C |
Thickness | 1000–1100 cm | — |
— | 0.4–0.8 eV | — |
— | 0–0.9 eV | — |
Thickness | 1–60 µm | — |
Thickness | 6–18 µm | — |
Thickness | 1053-1 cm | — |
Thickness | 1–50 µm | — |