Patent
US 11,417,788TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
Robyn L. WOO, Daniel C. LAW, Joseph C. BOISVERT
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,417,788Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV, the p-doped tunnel layer forming a type-I I tunnel-junction with the n-doped tunnel layer; wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The tunnel junction of claim 1, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and A l InPAs. Currently amended
The tunnel junction of claim 1, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The tunnel junction of claim 1, wherein the p-doped and the n- doped tunnel layers are grown sequentially in a reactor selected from the group consisting of a Metal Organic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxial reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Previously presented
Canceled
Canceled
Canceled
A photonic device, comprising: a first photovoltaic cell having a bandgap of from about 1 to 1.1 eV; a second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, Al GaAsSb and GaAsSb; and a type-I I tunnel junction disposed between the first photovoltaic cell and the second photovoltaic cell, the type-I I tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, A l AsSb, A l InAsSb, and A l InPAs; wherein the type-I I tunnel junction has an InP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV...; and further wherein the photonic device is a solar cell. Currently amended
The photonic device of claim 8, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and Al InPAs. Currently amended
The photonic device of claim 8, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The photonic device of claim 8, wherein the photonic device was grown inverted. Previously presented
The photonic device of claim 8, wherein the photonic device was grown upright. Previously presented
The photonic device of claim 8, further comprising: one or more additional photovoltaic cells in electrical connectivity with the first and second photovoltaic cells. Previously presented
11-13. Canceled
Canceled
Canceled
(Withdrawn-Currently Amended) A method of making a photovoltaic device, comprising: growing a p-doped tunnel layer comprising A l GaInAs; and growing a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of AlGaAsSb, A l AsSb, A lI nAsSb, and A l InPAs; wherein the p-doped and n-doped tunnel layers form a high bandgap, type- II tunnel junction having an I nP lattice constant, wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel la y er has a bandgap of greater than 1.25 eV and the n-doped tunnel la y er has a bandgap of greater than 1.35 eV, and wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the photovoltaic device, the first photovoltaic cell and the second photovoltaic cell each comprising a la y er of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The method of claim 19, wherein the p-doped and n-doped tunnel layers are sequentially grown in a reactor selected from the group consisting of a Metalorganic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxy reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Withdrawn
The method of claim 19, further comprising: growing two or more photovoltaic cells separated by the high bandgap, type- II tunnel junction. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown upright. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown inverted. Withdrawn
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction;..., wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic 1.1 eV and the second photovoltaic cell having a Currently amended cell having a bandgap of from about 1 to bandgap of from about 0.73 to about 0.8 eV.
Layer stacks claimed or described, ordered top of device to substrate.
type-II high bandgap tunnel junction
multijunction solar cell with type-II tunnel junction
Materials described outside the worked examples.
AlGaInAs (p-doped tunnel layer)
AlGaInAs
InP (n-doped tunnel layer)
InP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doped tunnel layer bandgap (AlGaInAs) | ≥ 1.25 | AlGaInAs |
n-doped tunnel layer bandgap | ≥ 1.35 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,417,788Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV, the p-doped tunnel layer forming a type-I I tunnel-junction with the n-doped tunnel layer; wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The tunnel junction of claim 1, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and A l InPAs. Currently amended
The tunnel junction of claim 1, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The tunnel junction of claim 1, wherein the p-doped and the n- doped tunnel layers are grown sequentially in a reactor selected from the group consisting of a Metal Organic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxial reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Previously presented
Canceled
Canceled
Canceled
A photonic device, comprising: a first photovoltaic cell having a bandgap of from about 1 to 1.1 eV; a second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, Al GaAsSb and GaAsSb; and a type-I I tunnel junction disposed between the first photovoltaic cell and the second photovoltaic cell, the type-I I tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, A l AsSb, A l InAsSb, and A l InPAs; wherein the type-I I tunnel junction has an InP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV...; and further wherein the photonic device is a solar cell. Currently amended
The photonic device of claim 8, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and Al InPAs. Currently amended
The photonic device of claim 8, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The photonic device of claim 8, wherein the photonic device was grown inverted. Previously presented
The photonic device of claim 8, wherein the photonic device was grown upright. Previously presented
The photonic device of claim 8, further comprising: one or more additional photovoltaic cells in electrical connectivity with the first and second photovoltaic cells. Previously presented
11-13. Canceled
Canceled
Canceled
(Withdrawn-Currently Amended) A method of making a photovoltaic device, comprising: growing a p-doped tunnel layer comprising A l GaInAs; and growing a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of AlGaAsSb, A l AsSb, A lI nAsSb, and A l InPAs; wherein the p-doped and n-doped tunnel layers form a high bandgap, type- II tunnel junction having an I nP lattice constant, wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel la y er has a bandgap of greater than 1.25 eV and the n-doped tunnel la y er has a bandgap of greater than 1.35 eV, and wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the photovoltaic device, the first photovoltaic cell and the second photovoltaic cell each comprising a la y er of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The method of claim 19, wherein the p-doped and n-doped tunnel layers are sequentially grown in a reactor selected from the group consisting of a Metalorganic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxy reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Withdrawn
The method of claim 19, further comprising: growing two or more photovoltaic cells separated by the high bandgap, type- II tunnel junction. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown upright. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown inverted. Withdrawn
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction;..., wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic 1.1 eV and the second photovoltaic cell having a Currently amended cell having a bandgap of from about 1 to bandgap of from about 0.73 to about 0.8 eV.
Layer stacks claimed or described, ordered top of device to substrate.
type-II high bandgap tunnel junction
multijunction solar cell with type-II tunnel junction
Materials described outside the worked examples.
AlGaInAs (p-doped tunnel layer)
AlGaInAs
InP (n-doped tunnel layer)
InP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doped tunnel layer bandgap (AlGaInAs) | ≥ 1.25 | AlGaInAs |
n-doped tunnel layer bandgap | ≥ 1.35 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,417,788Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV, the p-doped tunnel layer forming a type-I I tunnel-junction with the n-doped tunnel layer; wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The tunnel junction of claim 1, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and A l InPAs. Currently amended
The tunnel junction of claim 1, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The tunnel junction of claim 1, wherein the p-doped and the n- doped tunnel layers are grown sequentially in a reactor selected from the group consisting of a Metal Organic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxial reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Previously presented
Canceled
Canceled
Canceled
A photonic device, comprising: a first photovoltaic cell having a bandgap of from about 1 to 1.1 eV; a second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, Al GaAsSb and GaAsSb; and a type-I I tunnel junction disposed between the first photovoltaic cell and the second photovoltaic cell, the type-I I tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, A l AsSb, A l InAsSb, and A l InPAs; wherein the type-I I tunnel junction has an InP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV...; and further wherein the photonic device is a solar cell. Currently amended
The photonic device of claim 8, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and Al InPAs. Currently amended
The photonic device of claim 8, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The photonic device of claim 8, wherein the photonic device was grown inverted. Previously presented
The photonic device of claim 8, wherein the photonic device was grown upright. Previously presented
The photonic device of claim 8, further comprising: one or more additional photovoltaic cells in electrical connectivity with the first and second photovoltaic cells. Previously presented
11-13. Canceled
Canceled
Canceled
(Withdrawn-Currently Amended) A method of making a photovoltaic device, comprising: growing a p-doped tunnel layer comprising A l GaInAs; and growing a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of AlGaAsSb, A l AsSb, A lI nAsSb, and A l InPAs; wherein the p-doped and n-doped tunnel layers form a high bandgap, type- II tunnel junction having an I nP lattice constant, wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel la y er has a bandgap of greater than 1.25 eV and the n-doped tunnel la y er has a bandgap of greater than 1.35 eV, and wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the photovoltaic device, the first photovoltaic cell and the second photovoltaic cell each comprising a la y er of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The method of claim 19, wherein the p-doped and n-doped tunnel layers are sequentially grown in a reactor selected from the group consisting of a Metalorganic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxy reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Withdrawn
The method of claim 19, further comprising: growing two or more photovoltaic cells separated by the high bandgap, type- II tunnel junction. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown upright. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown inverted. Withdrawn
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction;..., wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic 1.1 eV and the second photovoltaic cell having a Currently amended cell having a bandgap of from about 1 to bandgap of from about 0.73 to about 0.8 eV.
Layer stacks claimed or described, ordered top of device to substrate.
type-II high bandgap tunnel junction
multijunction solar cell with type-II tunnel junction
Materials described outside the worked examples.
AlGaInAs (p-doped tunnel layer)
AlGaInAs
InP (n-doped tunnel layer)
InP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doped tunnel layer bandgap (AlGaInAs) | ≥ 1.25 | AlGaInAs |
n-doped tunnel layer bandgap | ≥ 1.35 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,417,788Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV, the p-doped tunnel layer forming a type-I I tunnel-junction with the n-doped tunnel layer; wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The tunnel junction of claim 1, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and A l InPAs. Currently amended
The tunnel junction of claim 1, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The tunnel junction of claim 1, wherein the p-doped and the n- doped tunnel layers are grown sequentially in a reactor selected from the group consisting of a Metal Organic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxial reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Previously presented
Canceled
Canceled
Canceled
A photonic device, comprising: a first photovoltaic cell having a bandgap of from about 1 to 1.1 eV; a second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, Al GaAsSb and GaAsSb; and a type-I I tunnel junction disposed between the first photovoltaic cell and the second photovoltaic cell, the type-I I tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, A l AsSb, A l InAsSb, and A l InPAs; wherein the type-I I tunnel junction has an InP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel layer has a bandgap of greater than 1.25 eV and the n-doped tunnel layer has a bandgap of greater than 1.35 eV...; and further wherein the photonic device is a solar cell. Currently amended
The photonic device of claim 8, wherein the n-doped tunnel layer is a n-doped material selected from the group consisting of, A l AsSb, A lI nAsSb, and Al InPAs. Currently amended
The photonic device of claim 8, wherein the p-doped tunnel layer and the n-doped tunnel layer have a doping level from 1x10 19/cm 3 to 1x10 2 0/cm 3. Previously presented
The photonic device of claim 8, wherein the photonic device was grown inverted. Previously presented
The photonic device of claim 8, wherein the photonic device was grown upright. Previously presented
The photonic device of claim 8, further comprising: one or more additional photovoltaic cells in electrical connectivity with the first and second photovoltaic cells. Previously presented
11-13. Canceled
Canceled
Canceled
(Withdrawn-Currently Amended) A method of making a photovoltaic device, comprising: growing a p-doped tunnel layer comprising A l GaInAs; and growing a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of AlGaAsSb, A l AsSb, A lI nAsSb, and A l InPAs; wherein the p-doped and n-doped tunnel layers form a high bandgap, type- II tunnel junction having an I nP lattice constant, wherein the tunnel junction is optically transparent, forming a heterojunction; wherein the p-doped tunnel la y er has a bandgap of greater than 1.25 eV and the n-doped tunnel la y er has a bandgap of greater than 1.35 eV, and wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the photovoltaic device, the first photovoltaic cell and the second photovoltaic cell each comprising a la y er of semiconductor material selected from the group consisting of I nP, A lI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic cell having a bandgap of from about 1 to 1.1 eV and the second photovoltaic cell having a bandgap of from about 0.73 to about 0.8 eV. Currently amended
The method of claim 19, wherein the p-doped and n-doped tunnel layers are sequentially grown in a reactor selected from the group consisting of a Metalorganic Vapor Phase Epitaxial reactor, a Hydride Vapor Phase Epitaxy reactor, a Molecular Beam Epitaxy reactor, a Chemical Beam Epitaxy reactor, and an Atomic Layer Deposition reactor. Withdrawn
The method of claim 19, further comprising: growing two or more photovoltaic cells separated by the high bandgap, type- II tunnel junction. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown upright. Withdrawn
The method of claim 19, wherein the two or more photovoltaic cells are grown inverted. Withdrawn
A tunnel junction of a solar cell, the tunnel junction comprising: a p-doped tunnel layer comprising AlGaInAs; and a n-doped tunnel layer in contact with the p-doped tunnel layer, the n-doped tunnel layer being a n-doped material selected from the group consisting of,, A l GaAsSb, Al AsSb, A lI nAsSb, and A l InPAs; wherein the tunnel junction has an I nP lattice constant; wherein the tunnel junction is optically transparent, forming a heterojunction;..., wherein the tunnel junction is disposed between a first photovoltaic cell and a second photovoltaic cell of the solar cell, the first photovoltaic cell and the second photovoltaic cell each comprising a layer of semiconductor material selected from the group consisting of I nP, AlI nAsSb, A l InPAs, GaInPAs, GaInAs, A l GaAsSb and GaAsSb, the first photovoltaic 1.1 eV and the second photovoltaic cell having a Currently amended cell having a bandgap of from about 1 to bandgap of from about 0.73 to about 0.8 eV.
Layer stacks claimed or described, ordered top of device to substrate.
type-II high bandgap tunnel junction
multijunction solar cell with type-II tunnel junction
Materials described outside the worked examples.
AlGaInAs (p-doped tunnel layer)
AlGaInAs
InP (n-doped tunnel layer)
InP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doped tunnel layer bandgap (AlGaInAs) | ≥ 1.25 | AlGaInAs |
n-doped tunnel layer bandgap | ≥ 1.35 |
Related documents with shared materials, methods, properties, or citations.
prior art AlGaInAs homojunction tunnel diode
AlGaAsSb (n-doped tunnel layer candidate)
AlGaAsSb
AlAsSb (n-doped tunnel layer candidate)
AlAsSb
AlInAsSb (n-doped tunnel layer candidate)
AlInAsSb
AlInPAs (n-doped tunnel layer candidate)
AlInPAs
GaInPAs (subcell semiconductor)
GaInPAs
GaInAs (subcell semiconductor)
GaInAs
GaAsSb (subcell semiconductor)
GaAsSb
first photovoltaic cell bandgap | 1–1.1 | — |
second photovoltaic cell bandgap | 0.73–0.8 | — |
p-doped tunnel layer bandgap range (lattice-matched to InP, claim 18) | 0.73–2 | AlGaInAs |
Thickness | 0.04–0.35 µm | — |
— | 0.73–2 eV | — |
— | 0.73–2.45 eV | — |
— | 1–1.1 eV | — |
— | 0.73–0.8 eV | — |
— | ≥ 1.1 eV | — |
— | ≥ 1.25 eV | — |
— | ≥ 1.35 eV | — |
Thickness | ≥ 920 nm | — |
prior art AlGaInAs homojunction tunnel diode
AlGaAsSb (n-doped tunnel layer candidate)
AlGaAsSb
AlAsSb (n-doped tunnel layer candidate)
AlAsSb
AlInAsSb (n-doped tunnel layer candidate)
AlInAsSb
AlInPAs (n-doped tunnel layer candidate)
AlInPAs
GaInPAs (subcell semiconductor)
GaInPAs
GaInAs (subcell semiconductor)
GaInAs
GaAsSb (subcell semiconductor)
GaAsSb
first photovoltaic cell bandgap | 1–1.1 | — |
second photovoltaic cell bandgap | 0.73–0.8 | — |
p-doped tunnel layer bandgap range (lattice-matched to InP, claim 18) | 0.73–2 | AlGaInAs |
Thickness | 0.04–0.35 µm | — |
— | 0.73–2 eV | — |
— | 0.73–2.45 eV | — |
— | 1–1.1 eV | — |
— | 0.73–0.8 eV | — |
— | ≥ 1.1 eV | — |
— | ≥ 1.25 eV | — |
— | ≥ 1.35 eV | — |
Thickness | ≥ 920 nm | — |
prior art AlGaInAs homojunction tunnel diode
AlGaAsSb (n-doped tunnel layer candidate)
AlGaAsSb
AlAsSb (n-doped tunnel layer candidate)
AlAsSb
AlInAsSb (n-doped tunnel layer candidate)
AlInAsSb
AlInPAs (n-doped tunnel layer candidate)
AlInPAs
GaInPAs (subcell semiconductor)
GaInPAs
GaInAs (subcell semiconductor)
GaInAs
GaAsSb (subcell semiconductor)
GaAsSb
first photovoltaic cell bandgap | 1–1.1 | — |
second photovoltaic cell bandgap | 0.73–0.8 | — |
p-doped tunnel layer bandgap range (lattice-matched to InP, claim 18) | 0.73–2 | AlGaInAs |
Thickness | 0.04–0.35 µm | — |
— | 0.73–2 eV | — |
— | 0.73–2.45 eV | — |
— | 1–1.1 eV | — |
— | 0.73–0.8 eV | — |
— | ≥ 1.1 eV | — |
— | ≥ 1.25 eV | — |
— | ≥ 1.35 eV | — |
Thickness | ≥ 920 nm | — |
prior art AlGaInAs homojunction tunnel diode
AlGaAsSb (n-doped tunnel layer candidate)
AlGaAsSb
AlAsSb (n-doped tunnel layer candidate)
AlAsSb
AlInAsSb (n-doped tunnel layer candidate)
AlInAsSb
AlInPAs (n-doped tunnel layer candidate)
AlInPAs
GaInPAs (subcell semiconductor)
GaInPAs
GaInAs (subcell semiconductor)
GaInAs
GaAsSb (subcell semiconductor)
GaAsSb
first photovoltaic cell bandgap | 1–1.1 | — |
second photovoltaic cell bandgap | 0.73–0.8 | — |
p-doped tunnel layer bandgap range (lattice-matched to InP, claim 18) | 0.73–2 | AlGaInAs |
Thickness | 0.04–0.35 µm | — |
— | 0.73–2 eV | — |
— | 0.73–2.45 eV | — |
— | 1–1.1 eV | — |
— | 0.73–0.8 eV | — |
— | ≥ 1.1 eV | — |
— | ≥ 1.25 eV | — |
— | ≥ 1.35 eV | — |
Thickness | ≥ 920 nm | — |