Patent
US 10,262,866INDIUM PHOSPHIDE SMOOTHING AND CHEMICAL MECHANICAL PLANARIZATION PROCESSES
Henry A. Beveridge
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,262,866Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of one embodiment of a structure that includes a dielectric layer disposed over a substrate, in accordance with one or more …
FIG. 2A after epitaxially growing an indium phosphide material in each of the opening(s) which extends above a topmost surface of the dielectric layer, in …
FIG. 3 with a planarized indium phosphide material having been formed above the topmost surface of the dielectric layer, in accordance with one or more aspects …
FIG. 4 after further planarizing the planarized indium phosphide material to form coplanar topmost surfaces of a remaining portion of the indium phosphide …
FIG. 5, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure disposed over the substrate, in accordance with one or …
FIG. 6 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 7 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 8 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 9 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 10 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 11 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 13 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 14 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 15 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 16 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 17 after epitaxially growing an additional semiconductor material within the one or more trenches which, for instance, extends above the topmost surface …
FIG. 18 with a planarized additional semiconductor material having been formed above the topmost surface of the dielectric layer, in accordance with one or …
FIG. 19 after planarizing the additional semiconductor material to form coplanar topmost surfaces of the additional semiconductor material and the dielectric …
FIG. 20 depicts the structure of
FIG. 21, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure having one or more sacrificial semiconductor layer(s) …
FIG. 22 depicts an alternative embodiment of the structure of
FIG. 23 depicts an alternative embodiment of the structure of
FIG. 24 depicts an alternative embodiment of the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A slurry composition for planarizing an indium phosphide material, the slurry composition comprising: an abrasive, an acidic pH modulator, a basic pH modulator and an oxidizer, wherein the oxidizer is configured to suppress generation of phosphine gas. Currently amended
The slurry composition of Claim 1, further comprising a soluble poly e lectrolyte. Original
The slurry composition of Claim 1, wherein the slurry composition has a rate of removal for the indium phosphide material that is greater than a rate of removal for a dielectric material. Original
The slurry composition of Claim 1, wherein the slurry composition is polish-resistant to at least one of an oxide material and a nitride material. Original
The slurry composition of Claim 1, wherein the abrasive comprises inorganic particles, organic particles or a mixture of organic particles and inorganic particles. Original
The slurry composition of Claim 1, wherein the abrasive comprises particles having an average particle diameter of from 5 nm to 500 nm. Original
The slurry composition of Claim 1, wherein the abrasive is present in the composition in an amount from 0.5 to 30 weight percent. Original
The slurry composition of Claim 1, wherein the composition has a pH from 1 to 13. Original
The slurry composition of Claim 1, wherein the acidic pH modulator comprises an inorganic acid and the basic pH modulator comprises at least one of an organic base and an inorganic base. Original
The slurry composition of Claim 1, wherein the oxidizer comprises ceric ammonium nitride, ferric nitrate, sodium persulfate, potassium persulfate, hydrogen peroxide or potassium permanganate. Original
-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type MOSFET with InP channel formed by aspect ratio trapping
Materials described outside the worked examples.
indium phosphide
InP
abrasive
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–500 nm | — |
Thickness | 5–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,262,866Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of one embodiment of a structure that includes a dielectric layer disposed over a substrate, in accordance with one or more …
FIG. 2A after epitaxially growing an indium phosphide material in each of the opening(s) which extends above a topmost surface of the dielectric layer, in …
FIG. 3 with a planarized indium phosphide material having been formed above the topmost surface of the dielectric layer, in accordance with one or more aspects …
FIG. 4 after further planarizing the planarized indium phosphide material to form coplanar topmost surfaces of a remaining portion of the indium phosphide …
FIG. 5, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure disposed over the substrate, in accordance with one or …
FIG. 6 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 7 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 8 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 9 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 10 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 11 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 13 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 14 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 15 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 16 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 17 after epitaxially growing an additional semiconductor material within the one or more trenches which, for instance, extends above the topmost surface …
FIG. 18 with a planarized additional semiconductor material having been formed above the topmost surface of the dielectric layer, in accordance with one or …
FIG. 19 after planarizing the additional semiconductor material to form coplanar topmost surfaces of the additional semiconductor material and the dielectric …
FIG. 20 depicts the structure of
FIG. 21, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure having one or more sacrificial semiconductor layer(s) …
FIG. 22 depicts an alternative embodiment of the structure of
FIG. 23 depicts an alternative embodiment of the structure of
FIG. 24 depicts an alternative embodiment of the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A slurry composition for planarizing an indium phosphide material, the slurry composition comprising: an abrasive, an acidic pH modulator, a basic pH modulator and an oxidizer, wherein the oxidizer is configured to suppress generation of phosphine gas. Currently amended
The slurry composition of Claim 1, further comprising a soluble poly e lectrolyte. Original
The slurry composition of Claim 1, wherein the slurry composition has a rate of removal for the indium phosphide material that is greater than a rate of removal for a dielectric material. Original
The slurry composition of Claim 1, wherein the slurry composition is polish-resistant to at least one of an oxide material and a nitride material. Original
The slurry composition of Claim 1, wherein the abrasive comprises inorganic particles, organic particles or a mixture of organic particles and inorganic particles. Original
The slurry composition of Claim 1, wherein the abrasive comprises particles having an average particle diameter of from 5 nm to 500 nm. Original
The slurry composition of Claim 1, wherein the abrasive is present in the composition in an amount from 0.5 to 30 weight percent. Original
The slurry composition of Claim 1, wherein the composition has a pH from 1 to 13. Original
The slurry composition of Claim 1, wherein the acidic pH modulator comprises an inorganic acid and the basic pH modulator comprises at least one of an organic base and an inorganic base. Original
The slurry composition of Claim 1, wherein the oxidizer comprises ceric ammonium nitride, ferric nitrate, sodium persulfate, potassium persulfate, hydrogen peroxide or potassium permanganate. Original
-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type MOSFET with InP channel formed by aspect ratio trapping
Materials described outside the worked examples.
indium phosphide
InP
abrasive
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–500 nm | — |
Thickness | 5–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,262,866Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of one embodiment of a structure that includes a dielectric layer disposed over a substrate, in accordance with one or more …
FIG. 2A after epitaxially growing an indium phosphide material in each of the opening(s) which extends above a topmost surface of the dielectric layer, in …
FIG. 3 with a planarized indium phosphide material having been formed above the topmost surface of the dielectric layer, in accordance with one or more aspects …
FIG. 4 after further planarizing the planarized indium phosphide material to form coplanar topmost surfaces of a remaining portion of the indium phosphide …
FIG. 5, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure disposed over the substrate, in accordance with one or …
FIG. 6 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 7 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 8 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 9 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 10 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 11 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 13 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 14 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 15 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 16 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 17 after epitaxially growing an additional semiconductor material within the one or more trenches which, for instance, extends above the topmost surface …
FIG. 18 with a planarized additional semiconductor material having been formed above the topmost surface of the dielectric layer, in accordance with one or …
FIG. 19 after planarizing the additional semiconductor material to form coplanar topmost surfaces of the additional semiconductor material and the dielectric …
FIG. 20 depicts the structure of
FIG. 21, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure having one or more sacrificial semiconductor layer(s) …
FIG. 22 depicts an alternative embodiment of the structure of
FIG. 23 depicts an alternative embodiment of the structure of
FIG. 24 depicts an alternative embodiment of the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A slurry composition for planarizing an indium phosphide material, the slurry composition comprising: an abrasive, an acidic pH modulator, a basic pH modulator and an oxidizer, wherein the oxidizer is configured to suppress generation of phosphine gas. Currently amended
The slurry composition of Claim 1, further comprising a soluble poly e lectrolyte. Original
The slurry composition of Claim 1, wherein the slurry composition has a rate of removal for the indium phosphide material that is greater than a rate of removal for a dielectric material. Original
The slurry composition of Claim 1, wherein the slurry composition is polish-resistant to at least one of an oxide material and a nitride material. Original
The slurry composition of Claim 1, wherein the abrasive comprises inorganic particles, organic particles or a mixture of organic particles and inorganic particles. Original
The slurry composition of Claim 1, wherein the abrasive comprises particles having an average particle diameter of from 5 nm to 500 nm. Original
The slurry composition of Claim 1, wherein the abrasive is present in the composition in an amount from 0.5 to 30 weight percent. Original
The slurry composition of Claim 1, wherein the composition has a pH from 1 to 13. Original
The slurry composition of Claim 1, wherein the acidic pH modulator comprises an inorganic acid and the basic pH modulator comprises at least one of an organic base and an inorganic base. Original
The slurry composition of Claim 1, wherein the oxidizer comprises ceric ammonium nitride, ferric nitrate, sodium persulfate, potassium persulfate, hydrogen peroxide or potassium permanganate. Original
-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type MOSFET with InP channel formed by aspect ratio trapping
Materials described outside the worked examples.
indium phosphide
InP
abrasive
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–500 nm | — |
Thickness | 5–500 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,262,866Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of one embodiment of a structure that includes a dielectric layer disposed over a substrate, in accordance with one or more …
FIG. 2A after epitaxially growing an indium phosphide material in each of the opening(s) which extends above a topmost surface of the dielectric layer, in …
FIG. 3 with a planarized indium phosphide material having been formed above the topmost surface of the dielectric layer, in accordance with one or more aspects …
FIG. 4 after further planarizing the planarized indium phosphide material to form coplanar topmost surfaces of a remaining portion of the indium phosphide …
FIG. 5, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure disposed over the substrate, in accordance with one or …
FIG. 6 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 7 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 8 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 9 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium phosphide …
FIG. 10 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 11 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 13 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 14 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 15 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 16 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
FIG. 17 after epitaxially growing an additional semiconductor material within the one or more trenches which, for instance, extends above the topmost surface …
FIG. 18 with a planarized additional semiconductor material having been formed above the topmost surface of the dielectric layer, in accordance with one or …
FIG. 19 after planarizing the additional semiconductor material to form coplanar topmost surfaces of the additional semiconductor material and the dielectric …
FIG. 20 depicts the structure of
FIG. 21, and includes coplanar surfaces of the indium phosphide material and a dielectric stack structure having one or more sacrificial semiconductor layer(s) …
FIG. 22 depicts an alternative embodiment of the structure of
FIG. 23 depicts an alternative embodiment of the structure of
FIG. 24 depicts an alternative embodiment of the structure of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A slurry composition for planarizing an indium phosphide material, the slurry composition comprising: an abrasive, an acidic pH modulator, a basic pH modulator and an oxidizer, wherein the oxidizer is configured to suppress generation of phosphine gas. Currently amended
The slurry composition of Claim 1, further comprising a soluble poly e lectrolyte. Original
The slurry composition of Claim 1, wherein the slurry composition has a rate of removal for the indium phosphide material that is greater than a rate of removal for a dielectric material. Original
The slurry composition of Claim 1, wherein the slurry composition is polish-resistant to at least one of an oxide material and a nitride material. Original
The slurry composition of Claim 1, wherein the abrasive comprises inorganic particles, organic particles or a mixture of organic particles and inorganic particles. Original
The slurry composition of Claim 1, wherein the abrasive comprises particles having an average particle diameter of from 5 nm to 500 nm. Original
The slurry composition of Claim 1, wherein the abrasive is present in the composition in an amount from 0.5 to 30 weight percent. Original
The slurry composition of Claim 1, wherein the composition has a pH from 1 to 13. Original
The slurry composition of Claim 1, wherein the acidic pH modulator comprises an inorganic acid and the basic pH modulator comprises at least one of an organic base and an inorganic base. Original
The slurry composition of Claim 1, wherein the oxidizer comprises ceric ammonium nitride, ferric nitrate, sodium persulfate, potassium persulfate, hydrogen peroxide or potassium permanganate. Original
-20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
n-type MOSFET with InP channel formed by aspect ratio trapping
Materials described outside the worked examples.
indium phosphide
InP
abrasive
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12 depicts a representative example of the first and the second slurry compositions utilized in the forming of the coplanar surfaces of the indium …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–500 nm | — |
Thickness | 5–500 nm |
Related documents with shared materials, methods, properties, or citations.
acidic pH modulator
oxidizer
basic pH modulator
soluble polyelectrolyte
ceric ammonium nitrate
ferric nitrate
Fe(NO₃)3
sodium persulfate
Na₂S₂O₈
potassium persulfate
K₂S₂O₈
hydrogen peroxide
H₂O₂
potassium permanganate
KMnO₄
dielectric layer
silicon
Si
| — |
Thickness | 10–200 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 25 nm | — |
acidic pH modulator
oxidizer
basic pH modulator
soluble polyelectrolyte
ceric ammonium nitrate
ferric nitrate
Fe(NO₃)3
sodium persulfate
Na₂S₂O₈
potassium persulfate
K₂S₂O₈
hydrogen peroxide
H₂O₂
potassium permanganate
KMnO₄
dielectric layer
silicon
Si
| — |
Thickness | 10–200 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 25 nm | — |
acidic pH modulator
oxidizer
basic pH modulator
soluble polyelectrolyte
ceric ammonium nitrate
ferric nitrate
Fe(NO₃)3
sodium persulfate
Na₂S₂O₈
potassium persulfate
K₂S₂O₈
hydrogen peroxide
H₂O₂
potassium permanganate
KMnO₄
dielectric layer
silicon
Si
| — |
Thickness | 10–200 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 25 nm | — |
acidic pH modulator
oxidizer
basic pH modulator
soluble polyelectrolyte
ceric ammonium nitrate
ferric nitrate
Fe(NO₃)3
sodium persulfate
Na₂S₂O₈
potassium persulfate
K₂S₂O₈
hydrogen peroxide
H₂O₂
potassium permanganate
KMnO₄
dielectric layer
silicon
Si
| — |
Thickness | 10–200 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 25 nm | — |