Patent
US 9,130,082Apparatus for Generating/Detecting Terahertz Wave Using Graphene and Manufacturing Method of the Same
Kyung Hyun PARK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,130,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a plan view of a terahertz wave generat m g/detect mg 15 apparatus accord in g to an embodiment of the in ventive concept,
FIG 2 is a cross-sectional view of an active region of
FIGS 3 to 10 are cross-sectional views of a method for manufactur ing a terahertz wave generat in g/detect in g apparatus on the basis of
FIG 11 is a plan view illustrat in g one app lic ation of the terahertz wave generat in g/detect in g apparatus accord in g to an embodiment of the in ventive concept
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A terahertz wave generating/detecting apparatus comprising: a substrate having including an active region and a transmitting region; a lower metal layer extending in a first direction and disposed on the active region and the transmitting region of the substrate; a graphene layer disposed on a portion of the lower metal layer efdisposed on the active region of the substrate; and a plurality of upper metal layers extending in the first direction and disposed on the graphene layer of the active region and the substrate of the transmission transmitting region of the substrate; and a dielectric layer disposed on the graphene layer and between two adjacent upper metal layers, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by when beated beat laser light i s applied to the graphene layer and the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the upper metal layers are spaced apart from each other in a second direction crossing the first direction.
The terahertz wave generating/detecting apparatus of claim 1, further comprising an interlayer dielectric between the lower metal layer and portions of the upper metal layers disposed over e n the transmitting region.
The terahertz wave generating/detecting apparatus of claim 1, wherein the graphene layer has a width line greater than that of the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the lower metal layer comprises nickel (Ni), copper (Cu), or platinum (Pt).
The terahertz wave generating/detecting apparatus of claim 1, further comprising a transmitting antenna connected coupled to portions of the lower metal layer and the upper metal layers disposed on the transmitting region of the substrate.
canceled
The terahertz wave generating/detecting apparatus of claim [[3]]1, wherein the dielectric layer comprises a polymer.
The terahertz wave generating/detecting apparatus of claim 4, wherein the polymer comprises benzocyclobutene (BCB).
canceled
A method for manufacturing a terahertz wave generating/detecting apparatus, the method comprising: forming a lower metal layer on an active region and a transmitting region of a substrate; forming a graphene layer on a portion of the lower metal layer e f disposed over the active region; forming patterning the graphene layer and the lower metal layer with a predetermined line width to have a line-shape that extends in a first direction; forming an interlayer dielectric around the graphene layer ef-disposed over the active region and on a portion of the lower metal layer e f disposed on the transmitting region; and forming a plurality of upper metal layers extending in the first direction on the graphene layer and a portion of the interlayer dielectric disposed on the transmitting region[[,]]; and forming a dielectric layer on the graphene layer and between two adjacent upper metal layers, wherein the plurality of upper layers are spaced apart from each other in a second direction crossing the first direction.
The method of claim 15, further comprising etching the lower metal layer with to have a line width less than that of the graphene layer.
canceled
The method of claim [[19]]15, wherein the dielectric layer comprises a polymer, and wherein forming the dielectric layer comprises formed by using an inkjet printing method or a screen process method. Page 7 of 8
Layer stacks claimed or described, ordered top of device to substrate.
terahertz wave generating/detecting apparatus
Materials described outside the worked examples.
graphene
lower metal layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,130,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a plan view of a terahertz wave generat m g/detect mg 15 apparatus accord in g to an embodiment of the in ventive concept,
FIG 2 is a cross-sectional view of an active region of
FIGS 3 to 10 are cross-sectional views of a method for manufactur ing a terahertz wave generat in g/detect in g apparatus on the basis of
FIG 11 is a plan view illustrat in g one app lic ation of the terahertz wave generat in g/detect in g apparatus accord in g to an embodiment of the in ventive concept
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A terahertz wave generating/detecting apparatus comprising: a substrate having including an active region and a transmitting region; a lower metal layer extending in a first direction and disposed on the active region and the transmitting region of the substrate; a graphene layer disposed on a portion of the lower metal layer efdisposed on the active region of the substrate; and a plurality of upper metal layers extending in the first direction and disposed on the graphene layer of the active region and the substrate of the transmission transmitting region of the substrate; and a dielectric layer disposed on the graphene layer and between two adjacent upper metal layers, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by when beated beat laser light i s applied to the graphene layer and the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the upper metal layers are spaced apart from each other in a second direction crossing the first direction.
The terahertz wave generating/detecting apparatus of claim 1, further comprising an interlayer dielectric between the lower metal layer and portions of the upper metal layers disposed over e n the transmitting region.
The terahertz wave generating/detecting apparatus of claim 1, wherein the graphene layer has a width line greater than that of the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the lower metal layer comprises nickel (Ni), copper (Cu), or platinum (Pt).
The terahertz wave generating/detecting apparatus of claim 1, further comprising a transmitting antenna connected coupled to portions of the lower metal layer and the upper metal layers disposed on the transmitting region of the substrate.
canceled
The terahertz wave generating/detecting apparatus of claim [[3]]1, wherein the dielectric layer comprises a polymer.
The terahertz wave generating/detecting apparatus of claim 4, wherein the polymer comprises benzocyclobutene (BCB).
canceled
A method for manufacturing a terahertz wave generating/detecting apparatus, the method comprising: forming a lower metal layer on an active region and a transmitting region of a substrate; forming a graphene layer on a portion of the lower metal layer e f disposed over the active region; forming patterning the graphene layer and the lower metal layer with a predetermined line width to have a line-shape that extends in a first direction; forming an interlayer dielectric around the graphene layer ef-disposed over the active region and on a portion of the lower metal layer e f disposed on the transmitting region; and forming a plurality of upper metal layers extending in the first direction on the graphene layer and a portion of the interlayer dielectric disposed on the transmitting region[[,]]; and forming a dielectric layer on the graphene layer and between two adjacent upper metal layers, wherein the plurality of upper layers are spaced apart from each other in a second direction crossing the first direction.
The method of claim 15, further comprising etching the lower metal layer with to have a line width less than that of the graphene layer.
canceled
The method of claim [[19]]15, wherein the dielectric layer comprises a polymer, and wherein forming the dielectric layer comprises formed by using an inkjet printing method or a screen process method. Page 7 of 8
Layer stacks claimed or described, ordered top of device to substrate.
terahertz wave generating/detecting apparatus
Materials described outside the worked examples.
graphene
lower metal layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,130,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a plan view of a terahertz wave generat m g/detect mg 15 apparatus accord in g to an embodiment of the in ventive concept,
FIG 2 is a cross-sectional view of an active region of
FIGS 3 to 10 are cross-sectional views of a method for manufactur ing a terahertz wave generat in g/detect in g apparatus on the basis of
FIG 11 is a plan view illustrat in g one app lic ation of the terahertz wave generat in g/detect in g apparatus accord in g to an embodiment of the in ventive concept
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A terahertz wave generating/detecting apparatus comprising: a substrate having including an active region and a transmitting region; a lower metal layer extending in a first direction and disposed on the active region and the transmitting region of the substrate; a graphene layer disposed on a portion of the lower metal layer efdisposed on the active region of the substrate; and a plurality of upper metal layers extending in the first direction and disposed on the graphene layer of the active region and the substrate of the transmission transmitting region of the substrate; and a dielectric layer disposed on the graphene layer and between two adjacent upper metal layers, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by when beated beat laser light i s applied to the graphene layer and the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the upper metal layers are spaced apart from each other in a second direction crossing the first direction.
The terahertz wave generating/detecting apparatus of claim 1, further comprising an interlayer dielectric between the lower metal layer and portions of the upper metal layers disposed over e n the transmitting region.
The terahertz wave generating/detecting apparatus of claim 1, wherein the graphene layer has a width line greater than that of the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the lower metal layer comprises nickel (Ni), copper (Cu), or platinum (Pt).
The terahertz wave generating/detecting apparatus of claim 1, further comprising a transmitting antenna connected coupled to portions of the lower metal layer and the upper metal layers disposed on the transmitting region of the substrate.
canceled
The terahertz wave generating/detecting apparatus of claim [[3]]1, wherein the dielectric layer comprises a polymer.
The terahertz wave generating/detecting apparatus of claim 4, wherein the polymer comprises benzocyclobutene (BCB).
canceled
A method for manufacturing a terahertz wave generating/detecting apparatus, the method comprising: forming a lower metal layer on an active region and a transmitting region of a substrate; forming a graphene layer on a portion of the lower metal layer e f disposed over the active region; forming patterning the graphene layer and the lower metal layer with a predetermined line width to have a line-shape that extends in a first direction; forming an interlayer dielectric around the graphene layer ef-disposed over the active region and on a portion of the lower metal layer e f disposed on the transmitting region; and forming a plurality of upper metal layers extending in the first direction on the graphene layer and a portion of the interlayer dielectric disposed on the transmitting region[[,]]; and forming a dielectric layer on the graphene layer and between two adjacent upper metal layers, wherein the plurality of upper layers are spaced apart from each other in a second direction crossing the first direction.
The method of claim 15, further comprising etching the lower metal layer with to have a line width less than that of the graphene layer.
canceled
The method of claim [[19]]15, wherein the dielectric layer comprises a polymer, and wherein forming the dielectric layer comprises formed by using an inkjet printing method or a screen process method. Page 7 of 8
Layer stacks claimed or described, ordered top of device to substrate.
terahertz wave generating/detecting apparatus
Materials described outside the worked examples.
graphene
lower metal layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,130,082Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a plan view of a terahertz wave generat m g/detect mg 15 apparatus accord in g to an embodiment of the in ventive concept,
FIG 2 is a cross-sectional view of an active region of
FIGS 3 to 10 are cross-sectional views of a method for manufactur ing a terahertz wave generat in g/detect in g apparatus on the basis of
FIG 11 is a plan view illustrat in g one app lic ation of the terahertz wave generat in g/detect in g apparatus accord in g to an embodiment of the in ventive concept
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A terahertz wave generating/detecting apparatus comprising: a substrate having including an active region and a transmitting region; a lower metal layer extending in a first direction and disposed on the active region and the transmitting region of the substrate; a graphene layer disposed on a portion of the lower metal layer efdisposed on the active region of the substrate; and a plurality of upper metal layers extending in the first direction and disposed on the graphene layer of the active region and the substrate of the transmission transmitting region of the substrate; and a dielectric layer disposed on the graphene layer and between two adjacent upper metal layers, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by when beated beat laser light i s applied to the graphene layer and the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the upper metal layers are spaced apart from each other in a second direction crossing the first direction.
The terahertz wave generating/detecting apparatus of claim 1, further comprising an interlayer dielectric between the lower metal layer and portions of the upper metal layers disposed over e n the transmitting region.
The terahertz wave generating/detecting apparatus of claim 1, wherein the graphene layer has a width line greater than that of the lower metal layer.
The terahertz wave generating/detecting apparatus of claim 1, wherein the lower metal layer comprises nickel (Ni), copper (Cu), or platinum (Pt).
The terahertz wave generating/detecting apparatus of claim 1, further comprising a transmitting antenna connected coupled to portions of the lower metal layer and the upper metal layers disposed on the transmitting region of the substrate.
canceled
The terahertz wave generating/detecting apparatus of claim [[3]]1, wherein the dielectric layer comprises a polymer.
The terahertz wave generating/detecting apparatus of claim 4, wherein the polymer comprises benzocyclobutene (BCB).
canceled
A method for manufacturing a terahertz wave generating/detecting apparatus, the method comprising: forming a lower metal layer on an active region and a transmitting region of a substrate; forming a graphene layer on a portion of the lower metal layer e f disposed over the active region; forming patterning the graphene layer and the lower metal layer with a predetermined line width to have a line-shape that extends in a first direction; forming an interlayer dielectric around the graphene layer ef-disposed over the active region and on a portion of the lower metal layer e f disposed on the transmitting region; and forming a plurality of upper metal layers extending in the first direction on the graphene layer and a portion of the interlayer dielectric disposed on the transmitting region[[,]]; and forming a dielectric layer on the graphene layer and between two adjacent upper metal layers, wherein the plurality of upper layers are spaced apart from each other in a second direction crossing the first direction.
The method of claim 15, further comprising etching the lower metal layer with to have a line width less than that of the graphene layer.
canceled
The method of claim [[19]]15, wherein the dielectric layer comprises a polymer, and wherein forming the dielectric layer comprises formed by using an inkjet printing method or a screen process method. Page 7 of 8
Layer stacks claimed or described, ordered top of device to substrate.
terahertz wave generating/detecting apparatus
Materials described outside the worked examples.
graphene
lower metal layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
upper metal layers
polymer dielectric layer
benzocyclobutene
BCB
interlayer dielectric
nickel
Ni
copper
Cu
platinum
Pt
crystalline silicon substrate
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
METHOD FOR MANUFACTURING GRAPHENE NANO ARRAY AND FIELD-EFFECT TRANSISTOR INCLUDING THE SAME
upper metal layers
polymer dielectric layer
benzocyclobutene
BCB
interlayer dielectric
nickel
Ni
copper
Cu
platinum
Pt
crystalline silicon substrate
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
METHOD FOR MANUFACTURING GRAPHENE NANO ARRAY AND FIELD-EFFECT TRANSISTOR INCLUDING THE SAME
upper metal layers
polymer dielectric layer
benzocyclobutene
BCB
interlayer dielectric
nickel
Ni
copper
Cu
platinum
Pt
crystalline silicon substrate
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
METHOD FOR MANUFACTURING GRAPHENE NANO ARRAY AND FIELD-EFFECT TRANSISTOR INCLUDING THE SAME
upper metal layers
polymer dielectric layer
benzocyclobutene
BCB
interlayer dielectric
nickel
Ni
copper
Cu
platinum
Pt
crystalline silicon substrate
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
METHOD FOR MANUFACTURING GRAPHENE NANO ARRAY AND FIELD-EFFECT TRANSISTOR INCLUDING THE SAME