Patent
US 9,449,787liquid flow cell (graphene on nitride, single substrate, alternate stack)
oxide layer
nitride layer
polymer material
silicon
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
gold
Au
platinum
Pt
epoxy-based photoresist
| — |
Thickness | 2–8 mm | — |
Thickness | 50–300 nm | — |
Thickness | 20–60 nm | — |
Thickness | 200–500 µm | — |
Thickness | 60–120 nm | — |
Thickness | 80–100 nm | — |
Thickness | 250–1000 nm | — |
Thickness | 500–2000 nm | — |
Thickness | 50000–1500000 nm | — |
Thickness | 10–20 nm | — |
Thickness | 2–8 µm | — |
Thickness | 1–4 mm | — |
Thickness | 2–3 mm | — |
Temperature | 50–150 °C | — |
Duration | 5–25 minutes | — |
liquid flow cell (graphene on nitride, single substrate, alternate stack)
oxide layer
nitride layer
polymer material
silicon
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
gold
Au
platinum
Pt
epoxy-based photoresist
| — |
Thickness | 2–8 mm | — |
Thickness | 50–300 nm | — |
Thickness | 20–60 nm | — |
Thickness | 200–500 µm | — |
Thickness | 60–120 nm | — |
Thickness | 80–100 nm | — |
Thickness | 250–1000 nm | — |
Thickness | 500–2000 nm | — |
Thickness | 50000–1500000 nm | — |
Thickness | 10–20 nm | — |
Thickness | 2–8 µm | — |
Thickness | 1–4 mm | — |
Thickness | 2–3 mm | — |
Temperature | 50–150 °C | — |
Duration | 5–25 minutes | — |
liquid flow cell (graphene on nitride, single substrate, alternate stack)
oxide layer
nitride layer
polymer material
silicon
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
gold
Au
platinum
Pt
epoxy-based photoresist
| — |
Thickness | 2–8 mm | — |
Thickness | 50–300 nm | — |
Thickness | 20–60 nm | — |
Thickness | 200–500 µm | — |
Thickness | 60–120 nm | — |
Thickness | 80–100 nm | — |
Thickness | 250–1000 nm | — |
Thickness | 500–2000 nm | — |
Thickness | 50000–1500000 nm | — |
Thickness | 10–20 nm | — |
Thickness | 2–8 µm | — |
Thickness | 1–4 mm | — |
Thickness | 2–3 mm | — |
Temperature | 50–150 °C | — |
Duration | 5–25 minutes | — |
liquid flow cell (graphene on nitride, single substrate, alternate stack)
oxide layer
nitride layer
polymer material
silicon
Si
silicon oxide
SiO₂
silicon nitride
Si₃N₄
gold
Au
platinum
Pt
epoxy-based photoresist
| — |
Thickness | 2–8 mm | — |
Thickness | 50–300 nm | — |
Thickness | 20–60 nm | — |
Thickness | 200–500 µm | — |
Thickness | 60–120 nm | — |
Thickness | 80–100 nm | — |
Thickness | 250–1000 nm | — |
Thickness | 500–2000 nm | — |
Thickness | 50000–1500000 nm | — |
Thickness | 10–20 nm | — |
Thickness | 2–8 µm | — |
Thickness | 1–4 mm | — |
Thickness | 2–3 mm | — |
Temperature | 50–150 °C | — |
Duration | 5–25 minutes | — |