Patent
US 8,652,950C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC DEVICES
Son Van Nguyen
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,652,950Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating an initial structure that can be employed in one embodiment of the present …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the initial structure of
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating another initial structure that can be employed in the present disclosure in …
FIGS. 4A, 4B and 4C are pictorial representations (through cross sectional views) depicting some exemplary electronic devices including a carbon-rich carbon …
FIG. 5 is a pictorial representation (through a cross sectional view) depicting an electronic device including a carbon-rich carbon boron nitride dielectric …
FIGS. 6A and 6B are pictorial representations (through cross sectional views) depicting electronic devices including a carbon-rich carbon boron nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XByNZ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 1, wherein said at least one precursor includes at least a boron-containing gas precursor, a nitrogen-containing gas precursor and a hydrocarbon- containing gas precursor.
The method of Claim 1, wherein said at least one precursor includes a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor. 2 I:\ IBM \l l 1 \27463A\AMEND\27463A.am l.doc
The method of Claim 1, wherein said depositing comprises plasma enhanced chemical vapor deposition, chemical vapor deposition, atomic layer deposition, or a spin on process.
The method of Claim 1, wherein further comprising treating the carbon-rich carbon boron nitride dielectric film, wherein said treating is selected from the group consisting of thermal treatment, chemical treatment, UV treatment, e -beam treatment, microwave treatment, plasma treatment and any combination thereof.
The method of Claim 1, wherein said dielectric film has a dielectric constant of equal to, or less than 3.6.
The method of Claim 1, wherein said dielectric film has a dielectric constant from 2.5 to 3.2.
The method of Claim 1, wherein x is from 35 atomic percent to 70 atomic percent, y is from atomic percent to 32 atomic percent, and z is from 15 atomic percent to 33 atomic percent. original
The method of Claim 1, wherein said substrate is a carbon-based material selected from graphene, graphite and a carbon nanotube.
The method of Claim 1, wherein said substrate is a semiconductor material.
The method of Claim 1, wherein said substrate is an insulating material.
The method of Claim 1, wherein said at least one precursor is gaseous.
The method of Claim 1, wherein said at least one precursor includes a combined boron, nitrogen and hydrocarbon-containing gas precursor. 4 I: \IBM\ ll l 1 \27463A\AMEND\27463A.am l.doc
canceled
The meth od of Caim 1, A method of forming a dielectric film comprising: 3 I:\IBM\1 11 1\27463A\AMEND\27463A. aml.doc providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XBYN₇ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film.
The method of Clam 1, wherein said dielectric film is porous.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C xByNZ wherein x is atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
The method of Claim 17, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 17, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film. 5 I:\IBM\ 1111 \27463A\AMEND\27463A. am I.doc
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with dielectric cap
MOS field effect transistor with spacer
graphene-containing device
Materials described outside the worked examples.
carbon-rich carbon boron nitride dielectric film
CxByNz
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dielectric constant (k) of CxByNz film | ≤ 3.6 dimensionless | CxByNz |
dielectric constant (k) range of CxByNz film | 2.5–3.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,652,950Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating an initial structure that can be employed in one embodiment of the present …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the initial structure of
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating another initial structure that can be employed in the present disclosure in …
FIGS. 4A, 4B and 4C are pictorial representations (through cross sectional views) depicting some exemplary electronic devices including a carbon-rich carbon …
FIG. 5 is a pictorial representation (through a cross sectional view) depicting an electronic device including a carbon-rich carbon boron nitride dielectric …
FIGS. 6A and 6B are pictorial representations (through cross sectional views) depicting electronic devices including a carbon-rich carbon boron nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XByNZ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 1, wherein said at least one precursor includes at least a boron-containing gas precursor, a nitrogen-containing gas precursor and a hydrocarbon- containing gas precursor.
The method of Claim 1, wherein said at least one precursor includes a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor. 2 I:\ IBM \l l 1 \27463A\AMEND\27463A.am l.doc
The method of Claim 1, wherein said depositing comprises plasma enhanced chemical vapor deposition, chemical vapor deposition, atomic layer deposition, or a spin on process.
The method of Claim 1, wherein further comprising treating the carbon-rich carbon boron nitride dielectric film, wherein said treating is selected from the group consisting of thermal treatment, chemical treatment, UV treatment, e -beam treatment, microwave treatment, plasma treatment and any combination thereof.
The method of Claim 1, wherein said dielectric film has a dielectric constant of equal to, or less than 3.6.
The method of Claim 1, wherein said dielectric film has a dielectric constant from 2.5 to 3.2.
The method of Claim 1, wherein x is from 35 atomic percent to 70 atomic percent, y is from atomic percent to 32 atomic percent, and z is from 15 atomic percent to 33 atomic percent. original
The method of Claim 1, wherein said substrate is a carbon-based material selected from graphene, graphite and a carbon nanotube.
The method of Claim 1, wherein said substrate is a semiconductor material.
The method of Claim 1, wherein said substrate is an insulating material.
The method of Claim 1, wherein said at least one precursor is gaseous.
The method of Claim 1, wherein said at least one precursor includes a combined boron, nitrogen and hydrocarbon-containing gas precursor. 4 I: \IBM\ ll l 1 \27463A\AMEND\27463A.am l.doc
canceled
The meth od of Caim 1, A method of forming a dielectric film comprising: 3 I:\IBM\1 11 1\27463A\AMEND\27463A. aml.doc providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XBYN₇ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film.
The method of Clam 1, wherein said dielectric film is porous.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C xByNZ wherein x is atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
The method of Claim 17, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 17, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film. 5 I:\IBM\ 1111 \27463A\AMEND\27463A. am I.doc
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with dielectric cap
MOS field effect transistor with spacer
graphene-containing device
Materials described outside the worked examples.
carbon-rich carbon boron nitride dielectric film
CxByNz
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dielectric constant (k) of CxByNz film | ≤ 3.6 dimensionless | CxByNz |
dielectric constant (k) range of CxByNz film | 2.5–3.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,652,950Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating an initial structure that can be employed in one embodiment of the present …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the initial structure of
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating another initial structure that can be employed in the present disclosure in …
FIGS. 4A, 4B and 4C are pictorial representations (through cross sectional views) depicting some exemplary electronic devices including a carbon-rich carbon …
FIG. 5 is a pictorial representation (through a cross sectional view) depicting an electronic device including a carbon-rich carbon boron nitride dielectric …
FIGS. 6A and 6B are pictorial representations (through cross sectional views) depicting electronic devices including a carbon-rich carbon boron nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XByNZ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 1, wherein said at least one precursor includes at least a boron-containing gas precursor, a nitrogen-containing gas precursor and a hydrocarbon- containing gas precursor.
The method of Claim 1, wherein said at least one precursor includes a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor. 2 I:\ IBM \l l 1 \27463A\AMEND\27463A.am l.doc
The method of Claim 1, wherein said depositing comprises plasma enhanced chemical vapor deposition, chemical vapor deposition, atomic layer deposition, or a spin on process.
The method of Claim 1, wherein further comprising treating the carbon-rich carbon boron nitride dielectric film, wherein said treating is selected from the group consisting of thermal treatment, chemical treatment, UV treatment, e -beam treatment, microwave treatment, plasma treatment and any combination thereof.
The method of Claim 1, wherein said dielectric film has a dielectric constant of equal to, or less than 3.6.
The method of Claim 1, wherein said dielectric film has a dielectric constant from 2.5 to 3.2.
The method of Claim 1, wherein x is from 35 atomic percent to 70 atomic percent, y is from atomic percent to 32 atomic percent, and z is from 15 atomic percent to 33 atomic percent. original
The method of Claim 1, wherein said substrate is a carbon-based material selected from graphene, graphite and a carbon nanotube.
The method of Claim 1, wherein said substrate is a semiconductor material.
The method of Claim 1, wherein said substrate is an insulating material.
The method of Claim 1, wherein said at least one precursor is gaseous.
The method of Claim 1, wherein said at least one precursor includes a combined boron, nitrogen and hydrocarbon-containing gas precursor. 4 I: \IBM\ ll l 1 \27463A\AMEND\27463A.am l.doc
canceled
The meth od of Caim 1, A method of forming a dielectric film comprising: 3 I:\IBM\1 11 1\27463A\AMEND\27463A. aml.doc providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XBYN₇ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film.
The method of Clam 1, wherein said dielectric film is porous.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C xByNZ wherein x is atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
The method of Claim 17, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 17, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film. 5 I:\IBM\ 1111 \27463A\AMEND\27463A. am I.doc
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with dielectric cap
MOS field effect transistor with spacer
graphene-containing device
Materials described outside the worked examples.
carbon-rich carbon boron nitride dielectric film
CxByNz
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dielectric constant (k) of CxByNz film | ≤ 3.6 dimensionless | CxByNz |
dielectric constant (k) range of CxByNz film | 2.5–3.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,652,950Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) illustrating an initial structure that can be employed in one embodiment of the present …
FIG. 2 is a pictorial representation (through a cross sectional view) illustrating the initial structure of
FIG. 3 is a pictorial representation (through a cross sectional view) illustrating another initial structure that can be employed in the present disclosure in …
FIGS. 4A, 4B and 4C are pictorial representations (through cross sectional views) depicting some exemplary electronic devices including a carbon-rich carbon …
FIG. 5 is a pictorial representation (through a cross sectional view) depicting an electronic device including a carbon-rich carbon boron nitride dielectric …
FIGS. 6A and 6B are pictorial representations (through cross sectional views) depicting electronic devices including a carbon-rich carbon boron nitride …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XByNZ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 1, wherein said at least one precursor includes at least a boron-containing gas precursor, a nitrogen-containing gas precursor and a hydrocarbon- containing gas precursor.
The method of Claim 1, wherein said at least one precursor includes a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor. 2 I:\ IBM \l l 1 \27463A\AMEND\27463A.am l.doc
The method of Claim 1, wherein said depositing comprises plasma enhanced chemical vapor deposition, chemical vapor deposition, atomic layer deposition, or a spin on process.
The method of Claim 1, wherein further comprising treating the carbon-rich carbon boron nitride dielectric film, wherein said treating is selected from the group consisting of thermal treatment, chemical treatment, UV treatment, e -beam treatment, microwave treatment, plasma treatment and any combination thereof.
The method of Claim 1, wherein said dielectric film has a dielectric constant of equal to, or less than 3.6.
The method of Claim 1, wherein said dielectric film has a dielectric constant from 2.5 to 3.2.
The method of Claim 1, wherein x is from 35 atomic percent to 70 atomic percent, y is from atomic percent to 32 atomic percent, and z is from 15 atomic percent to 33 atomic percent. original
The method of Claim 1, wherein said substrate is a carbon-based material selected from graphene, graphite and a carbon nanotube.
The method of Claim 1, wherein said substrate is a semiconductor material.
The method of Claim 1, wherein said substrate is an insulating material.
The method of Claim 1, wherein said at least one precursor is gaseous.
The method of Claim 1, wherein said at least one precursor includes a combined boron, nitrogen and hydrocarbon-containing gas precursor. 4 I: \IBM\ ll l 1 \27463A\AMEND\27463A.am l.doc
canceled
The meth od of Caim 1, A method of forming a dielectric film comprising: 3 I:\IBM\1 11 1\27463A\AMEND\27463A. aml.doc providing a substrate into a reactor chamber; providing to the reactor chamber at least one precursor containing at least atoms of C, B and N; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C XBYN₇ wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film.
The method of Clam 1, wherein said dielectric film is porous.
A method of forming a dielectric film comprising: providing a substrate into a reactor chamber; providing to the reactor chamber at a combined boron and nitrogen containing liquid precursor and a hydrocarbon-containing gas precursor; and depositing a dielectric film on a surface of said substrate, wherein the dielectric film has a formula of C xByNZ wherein x is atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
The method of Claim 17, wherein said nitrogen is uniformly distributed throughout the dielectric film.
The method of Claim 17, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film. 5 I:\IBM\ 1111 \27463A\AMEND\27463A. am I.doc
Layer stacks claimed or described, ordered top of device to substrate.
interconnect structure with dielectric cap
MOS field effect transistor with spacer
graphene-containing device
Materials described outside the worked examples.
carbon-rich carbon boron nitride dielectric film
CxByNz
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dielectric constant (k) of CxByNz film | ≤ 3.6 dimensionless | CxByNz |
dielectric constant (k) range of CxByNz film | 2.5–3.2 dimensionless |
Related documents with shared materials, methods, properties, or citations.
graphite
carbon nanotube
Thickness | 1–12 cm | — |
Pressure | 200–800 MPa | — |
Duration | 450–1450 seconds | — |
Pressure | 50–150 MPa | — |
Thickness | 1–500 nm | — |
Thickness | 5–200 nm | — |
Flow Rate | 50–1000 sccm | — |
Flow Rate | 20–1000 sccm | — |
Flow Rate | 50–2000 sccm | — |
Flow Rate | 50–5000 sccm | — |
— | 75–1000 W | — |
— | 30–400 W | — |
Thickness | 0.5–3 nm | — |
Thickness | 0.5–1.2 nm | — |
Thickness | 150–500 nm | — |
Temperature | 25–500 °C | — |
Temperature | 300–420 °C | — |
Pressure | 150–800 MPa | — |
Thickness | 1–10 nm | — |
Thickness | 2–5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
— | 1.5–2 W | — |
Temperature | 0–420 °C | — |
Thickness | 150–370 nm | — |
Thickness | 310–370 nm | — |
Thickness | 150–310 nm | — |
Thickness | 400–900 nm | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 370 nm | — |
Thickness | ≤ 170 nm | — |
Duration | ≥ 0.1 hour | — |
graphite
carbon nanotube
Thickness | 1–12 cm | — |
Pressure | 200–800 MPa | — |
Duration | 450–1450 seconds | — |
Pressure | 50–150 MPa | — |
Thickness | 1–500 nm | — |
Thickness | 5–200 nm | — |
Flow Rate | 50–1000 sccm | — |
Flow Rate | 20–1000 sccm | — |
Flow Rate | 50–2000 sccm | — |
Flow Rate | 50–5000 sccm | — |
— | 75–1000 W | — |
— | 30–400 W | — |
Thickness | 0.5–3 nm | — |
Thickness | 0.5–1.2 nm | — |
Thickness | 150–500 nm | — |
Temperature | 25–500 °C | — |
Temperature | 300–420 °C | — |
Pressure | 150–800 MPa | — |
Thickness | 1–10 nm | — |
Thickness | 2–5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
— | 1.5–2 W | — |
Temperature | 0–420 °C | — |
Thickness | 150–370 nm | — |
Thickness | 310–370 nm | — |
Thickness | 150–310 nm | — |
Thickness | 400–900 nm | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 370 nm | — |
Thickness | ≤ 170 nm | — |
Duration | ≥ 0.1 hour | — |
graphite
carbon nanotube
Thickness | 1–12 cm | — |
Pressure | 200–800 MPa | — |
Duration | 450–1450 seconds | — |
Pressure | 50–150 MPa | — |
Thickness | 1–500 nm | — |
Thickness | 5–200 nm | — |
Flow Rate | 50–1000 sccm | — |
Flow Rate | 20–1000 sccm | — |
Flow Rate | 50–2000 sccm | — |
Flow Rate | 50–5000 sccm | — |
— | 75–1000 W | — |
— | 30–400 W | — |
Thickness | 0.5–3 nm | — |
Thickness | 0.5–1.2 nm | — |
Thickness | 150–500 nm | — |
Temperature | 25–500 °C | — |
Temperature | 300–420 °C | — |
Pressure | 150–800 MPa | — |
Thickness | 1–10 nm | — |
Thickness | 2–5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
— | 1.5–2 W | — |
Temperature | 0–420 °C | — |
Thickness | 150–370 nm | — |
Thickness | 310–370 nm | — |
Thickness | 150–310 nm | — |
Thickness | 400–900 nm | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 370 nm | — |
Thickness | ≤ 170 nm | — |
Duration | ≥ 0.1 hour | — |
graphite
carbon nanotube
Thickness | 1–12 cm | — |
Pressure | 200–800 MPa | — |
Duration | 450–1450 seconds | — |
Pressure | 50–150 MPa | — |
Thickness | 1–500 nm | — |
Thickness | 5–200 nm | — |
Flow Rate | 50–1000 sccm | — |
Flow Rate | 20–1000 sccm | — |
Flow Rate | 50–2000 sccm | — |
Flow Rate | 50–5000 sccm | — |
— | 75–1000 W | — |
— | 30–400 W | — |
Thickness | 0.5–3 nm | — |
Thickness | 0.5–1.2 nm | — |
Thickness | 150–500 nm | — |
Temperature | 25–500 °C | — |
Temperature | 300–420 °C | — |
Pressure | 150–800 MPa | — |
Thickness | 1–10 nm | — |
Thickness | 2–5 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
— | 1.5–2 W | — |
Temperature | 0–420 °C | — |
Thickness | 150–370 nm | — |
Thickness | 310–370 nm | — |
Thickness | 150–310 nm | — |
Thickness | 400–900 nm | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 370 nm | — |
Thickness | ≤ 170 nm | — |
Duration | ≥ 0.1 hour | — |