GRAPHENE AS INTERLAYER DIELECTRIC

Ye LU

Patent

Atlas literature

Patent

US 10,354,955

GRAPHENE AS INTERLAYER DIELECTRIC

Ye LU

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

10 independent · 10 dependent

1
Independentlow-K dielectric fill materiallow-K insulating graphene alloyintegrated circuit with BEOL interconnect layers and low-K ILD
An integrated circuit, comprising: a plurality of back-end-of-line (BEOL) interconnect layers comprising conductive lines and conductive vias; and [[an]]a low-K interlayer dielectric (ILD) between the BEOL interconnect layers including the conductive lines and the conductive vias, in which the low-K ILD comprises a low-K dielectric ﬁll material and a low-K insulating graphene alloy, disposed in alternating thin layers of the low-K dielectric ﬁll material on the low-K insulating graphene alloy, each surrounding the plurality of BEOL interconnect layers. Currently amended
1. 2
  Dependent← claim 1fluorographeneoxidized graphenehydrogenated grapheneintegrated circuit with BEOL interconnect layers and low-K ILD
  The integrated circuit of claim 1, in which the low-K insulating graphene alloy comprises ﬂuorographene, oxidized graphene, or hydrogenated graphene. Original
2. 6
  Dependent← claim 1conformal dielectric linerintegrated circuit with BEOL interconnect layers and low-K ILD
  The integrated circuit of claim 1, in which the conductive lines and the vias of the BEOL interconnect layers are at least partially lined with a conformal dielectric liner. Original
3. 8
  Dependent← claim 1integrated circuit with BEOL interconnect layers and low-K ILD
  The integrated circuit of claim 1, integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a ﬁxed location data unit. Original
3
Independent
Canceled
4
Independentlow-K dielectric fill materiallow-K insulating graphene alloyintegrated circuit with BEOL interconnect layers and low-K ILD
The integrated circuit of claim [[3]] 1, in which the alternating layers have diﬀerent thicknesses. Currently amended
5
Independentlow-K dielectric fill materiallow-K insulating graphene alloyintegrated circuit with BEOL interconnect layers and low-K ILD
The integrated circuit of claim [[3]] 1, in which the alternating layers have similar thicknesses. Currently amended
9
Independentlow-K insulating graphene alloygrapheneintegrated circuit with BEOL interconnect layers and low-K ILD
A method of making an integrated circuit, comprising: patterning and etching a low-K insulating graphene alloy layer on a middle-of-line (MOL) layer of the integrated circuit by depositing a sacriﬁcial catalyst layer on the MOL layer; diﬀusing a low resistivity carbon alloy through the sacriﬁcial catalyst layer; removing the sacriﬁcial catalyst layer; and ﬂuorinating the low resistivity carbon alloy; and forming back-end-of-line (BEOL) interconnect layers including conductive lines and conductive vias in the patterned low-K insulating graphene alloy layer. Currently amended
1. 10
  Dependent← claim 9low-K dielectric fill materialintegrated circuit with BEOL interconnect layers and low-K ILD
  The method of claim 9, further comprising growing a low-K dielectric layer on the MOL layer of the integrated circuit. Original
2. 11
  Dependent← claim 9low-K dielectric fill materialintegrated circuit with BEOL interconnect layers and low-K ILD
  The method of claim 9, further comprising depositing a low-K dielectric layer on an active layer of the integrated circuit. Original
3. 12
  Dependent← claim 9fluorographeneoxidized graphenehydrogenated graphene
  The method of claim 9, in which the low-K insulating graphene alloy layer comprises ﬂuorographene, oxidized graphene, or hydrogenated graphene. Original
4. 16
  Dependent← claim 9integrated circuit with BEOL interconnect layers and low-K ILD
  The method of claim 9, in which the integrated circuit is integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a ﬁxed location data unit. Original
13
Independent
Canceled
14
Independentgraphene
The method of claim [[13]] 9 in which the low resistivity carbon alloy comprises graphene. Currently amended
15
Independentlow-K insulating graphene alloygrapheneintegrated circuit with BEOL interconnect layers and low-K ILD
[[The]]A method o making an integrated circuit, comprising: patterning and etching a[[the]] low-K insulating graphene alloy layer on a middle-of-line (MOL) layer of the integrated circuit by: depositing a thin catalyst layer on the MOL layer; decomposing carbonaceous precursors from the thin catalyst layer; and ﬂuorinating a low resistivity carbon alloy; and forming back-end-of-line (BEOL) interconnect layers including conductive lines and conductive vias in the patterned low-K insulating graphene alloy la y er. Currently amended
17
Independentlow-K dielectric fill materiallow-K insulating graphene alloyintegrated circuit with BEOL interconnect layers and low-K ILD
An integrated circuit, comprising: a plurality of back-end-of-line (BEOL) interconnect layers comprising means for conducting; and a low-K interlayer dielectric (ILD) between the BEOL interconnect layers including the means for conducting, in which-at th low-K ILD comprises a low-K dielectric material and a low-K insulating graphene alloy, disposed in alternating thin layers of the low-K dielectric ﬁll material on the surrounding the plurality of BEOL interconnect
1. 18
  Dependent← claim 17fluorographeneoxidized graphenehydrogenated grapheneintegrated circuit with BEOL interconnect layers and low-K ILD
  The integrated circuit of claim 17, in which ﬂuorographene, oxidized graphene, or hydrogenated
2. 20
  Dependent← claim 17low-K insulating graphene alloyintegrated circuit with BEOL interconnect layers and low-K ILD
  The integrated circuit of claim 17, integrated player, a video player, an entertainment unit, a personal communication systems (PCS) unit, a unit. Original low-K insulating graphene alloy, each layers. Currently amended the low-K insulating graphene alloy comprises graphene. Original into a mobile phone, a set top box, a music navigation device, a computer, a hand-held portable data unit, and/or a ﬁxed location data
19
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

integrated circuit with BEOL interconnect layers and low-K ILD

BEOL conductive interconnect lines and viasBEOL conductive interconnect lines and vias

low-K dielectric fill materiallow-K dielectric fill material ILD layer

low-K insulating graphene alloylow-K insulating graphene alloy ILD layer

MOL layerMOL layer

Materials

Materials described outside the worked examples.

low-K dielectric fill material

Interlayer Dielectric Fill

low-K insulating graphene alloy

Interlayer Dielectric

Process steps

Additional fabrication and treatment steps described in the patent.

Cvd Growth

Step 1

Process details

method:CVD on sacrificial catalyst layer; diffuse low resistivity carbon alloy; remove catalyst; fluorinate

alternative:APCVD decomposition of carbonaceous precursors followed by fluorination

Materials:fluorographene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
K value of SiCON (prior art ILD)	2.5	SiCON
Reduction in overall interconnect capacitance using fluorinated graphene ILD

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GRAPHENE AS INTERLAYER DIELECTRIC | Matter42 Literature