Patent
US 9,748,340OF THE INVENTION
Jeffry Kelber
US
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Patent
Atlas literature
Patent
US 9,748,340Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) A field effect transistor (FET) for high frequency low power applications comprising: an Si(100) or Si (111) substrate, a layer of a rocksalt oxide (111) wherein said rocksalt oxide is either MgO or NiO formed on the surface of said substrate, a film of 1-3 monolayer (ML) graphene formed on said rocksaltoxide through chemical vapor deposition (CVD), plasma vapor deposition (PVD) or molecular beam epitaxy (MBE), a source and a drain formed on said film of 1-3 ML graphene, a gate oxide on said graphene film, and electrical contacts for said source and drain.
The FET of Claim 1 wherein said graphene is deposited by MBE.
(CURRENTLY A M ENDED) The FET of Claim 1 wherein said substrate is Si (111), said rocksalt oxide is either MgO or NiO, and said source and drain and electrical contacts are comprised of Cr and Au.
The FET of Claim 1, wherein said FET exhibits a bandgap of at least 0.5 eV.
canceled
(CURRENTLY A M ENDED) A method of preparing a graphene-based FET, comprising forming a rocksalt oxide (111) layer of either MgO or NiO on a substrate of Si (100) or Si (111), depositing a continuous film of 1-3 monolayers (ML) of graphene on said rocksalt oxide layer, forming a gate oxide and source and drain on said continuous film of 1-3 ML graphene and providing electrical contacts for said source and drain.
The method of Claim 5, wherein said continuous graphene film of 1-3 ML is formed by CVD, PVD or MBE.
The method of Claim 5, wherein said substrate is Si (111) and rocksalt oxide (111) is MgO or NiO.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor (FET)
Materials described outside the worked examples.
MgO (rocksalt oxide (111))
MgO
NiO (rocksalt oxide (111))
NiO
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.5 eV | C |
Optical Band Gap | 0.6 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,748,340Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) A field effect transistor (FET) for high frequency low power applications comprising: an Si(100) or Si (111) substrate, a layer of a rocksalt oxide (111) wherein said rocksalt oxide is either MgO or NiO formed on the surface of said substrate, a film of 1-3 monolayer (ML) graphene formed on said rocksaltoxide through chemical vapor deposition (CVD), plasma vapor deposition (PVD) or molecular beam epitaxy (MBE), a source and a drain formed on said film of 1-3 ML graphene, a gate oxide on said graphene film, and electrical contacts for said source and drain.
The FET of Claim 1 wherein said graphene is deposited by MBE.
(CURRENTLY A M ENDED) The FET of Claim 1 wherein said substrate is Si (111), said rocksalt oxide is either MgO or NiO, and said source and drain and electrical contacts are comprised of Cr and Au.
The FET of Claim 1, wherein said FET exhibits a bandgap of at least 0.5 eV.
canceled
(CURRENTLY A M ENDED) A method of preparing a graphene-based FET, comprising forming a rocksalt oxide (111) layer of either MgO or NiO on a substrate of Si (100) or Si (111), depositing a continuous film of 1-3 monolayers (ML) of graphene on said rocksalt oxide layer, forming a gate oxide and source and drain on said continuous film of 1-3 ML graphene and providing electrical contacts for said source and drain.
The method of Claim 5, wherein said continuous graphene film of 1-3 ML is formed by CVD, PVD or MBE.
The method of Claim 5, wherein said substrate is Si (111) and rocksalt oxide (111) is MgO or NiO.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor (FET)
Materials described outside the worked examples.
MgO (rocksalt oxide (111))
MgO
NiO (rocksalt oxide (111))
NiO
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.5 eV | C |
Optical Band Gap | 0.6 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,748,340Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) A field effect transistor (FET) for high frequency low power applications comprising: an Si(100) or Si (111) substrate, a layer of a rocksalt oxide (111) wherein said rocksalt oxide is either MgO or NiO formed on the surface of said substrate, a film of 1-3 monolayer (ML) graphene formed on said rocksaltoxide through chemical vapor deposition (CVD), plasma vapor deposition (PVD) or molecular beam epitaxy (MBE), a source and a drain formed on said film of 1-3 ML graphene, a gate oxide on said graphene film, and electrical contacts for said source and drain.
The FET of Claim 1 wherein said graphene is deposited by MBE.
(CURRENTLY A M ENDED) The FET of Claim 1 wherein said substrate is Si (111), said rocksalt oxide is either MgO or NiO, and said source and drain and electrical contacts are comprised of Cr and Au.
The FET of Claim 1, wherein said FET exhibits a bandgap of at least 0.5 eV.
canceled
(CURRENTLY A M ENDED) A method of preparing a graphene-based FET, comprising forming a rocksalt oxide (111) layer of either MgO or NiO on a substrate of Si (100) or Si (111), depositing a continuous film of 1-3 monolayers (ML) of graphene on said rocksalt oxide layer, forming a gate oxide and source and drain on said continuous film of 1-3 ML graphene and providing electrical contacts for said source and drain.
The method of Claim 5, wherein said continuous graphene film of 1-3 ML is formed by CVD, PVD or MBE.
The method of Claim 5, wherein said substrate is Si (111) and rocksalt oxide (111) is MgO or NiO.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor (FET)
Materials described outside the worked examples.
MgO (rocksalt oxide (111))
MgO
NiO (rocksalt oxide (111))
NiO
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.5 eV | C |
Optical Band Gap | 0.6 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,748,340Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) A field effect transistor (FET) for high frequency low power applications comprising: an Si(100) or Si (111) substrate, a layer of a rocksalt oxide (111) wherein said rocksalt oxide is either MgO or NiO formed on the surface of said substrate, a film of 1-3 monolayer (ML) graphene formed on said rocksaltoxide through chemical vapor deposition (CVD), plasma vapor deposition (PVD) or molecular beam epitaxy (MBE), a source and a drain formed on said film of 1-3 ML graphene, a gate oxide on said graphene film, and electrical contacts for said source and drain.
The FET of Claim 1 wherein said graphene is deposited by MBE.
(CURRENTLY A M ENDED) The FET of Claim 1 wherein said substrate is Si (111), said rocksalt oxide is either MgO or NiO, and said source and drain and electrical contacts are comprised of Cr and Au.
The FET of Claim 1, wherein said FET exhibits a bandgap of at least 0.5 eV.
canceled
(CURRENTLY A M ENDED) A method of preparing a graphene-based FET, comprising forming a rocksalt oxide (111) layer of either MgO or NiO on a substrate of Si (100) or Si (111), depositing a continuous film of 1-3 monolayers (ML) of graphene on said rocksalt oxide layer, forming a gate oxide and source and drain on said continuous film of 1-3 ML graphene and providing electrical contacts for said source and drain.
The method of Claim 5, wherein said continuous graphene film of 1-3 ML is formed by CVD, PVD or MBE.
The method of Claim 5, wherein said substrate is Si (111) and rocksalt oxide (111) is MgO or NiO.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene field effect transistor (FET)
Materials described outside the worked examples.
MgO (rocksalt oxide (111))
MgO
NiO (rocksalt oxide (111))
NiO
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.5 eV | C |
Optical Band Gap | 0.6 eV |
Related documents with shared materials, methods, properties, or citations.
graphene (1-3 ML)
C
gate oxide
Cr
Au
Si (100) substrate
Si
alumina (Al₂O₃)
Al₂O₃
hafnia (HfO₂)
HfO₂
Co₃O₄ (111)
Co₃O₄
C |
Optical Band Gap | 0.5–1 eV | C |
graphene (1-3 ML)
C
gate oxide
Cr
Au
Si (100) substrate
Si
alumina (Al₂O₃)
Al₂O₃
hafnia (HfO₂)
HfO₂
Co₃O₄ (111)
Co₃O₄
C |
Optical Band Gap | 0.5–1 eV | C |
graphene (1-3 ML)
C
gate oxide
Cr
Au
Si (100) substrate
Si
alumina (Al₂O₃)
Al₂O₃
hafnia (HfO₂)
HfO₂
Co₃O₄ (111)
Co₃O₄
C |
Optical Band Gap | 0.5–1 eV | C |
graphene (1-3 ML)
C
gate oxide
Cr
Au
Si (100) substrate
Si
alumina (Al₂O₃)
Al₂O₃
hafnia (HfO₂)
HfO₂
Co₃O₄ (111)
Co₃O₄
C |
Optical Band Gap | 0.5–1 eV | C |