Patent
US 9,324,805FLEXIBLE GRAPHENE SWITCHING DEVICE
Yun-sung WOO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,324,805Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a flexible graphene switching device including semiconductor nanowires according to example embodiments; …
FIG. 2 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0025]
FIG. 3 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0026]
FIGS. 4A and 4B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; [0027]
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIGS. 6A and 6B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; and [0029]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device comprising: a graphene layer on a substrate; a plurality of semiconductor nanowires on the substrate, at least one of the plurality of semiconductor nanowires being connected to a first end of the graphene layer; a first electrode connected to a second end of the graphene layer; a second electrode on the substrate facing the first electrode so as to be connected to the plurality of semiconductor nanowires; a gate insulating layer on the substrate to cover the graphene layer; and a gate electrode on the gate insulating layer, wherein the gate electrode and the plurality of semiconductor nanowires face each other with the graphene layer therebetween, and at least one of the plurality of semiconductor nanowires is connected to at least one of the second electrode, the graphene layer, and the other of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are doped with n-type or p-type impurities.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires include silicon, germanium, silicon-germanium, a I II -V Group semiconductor, a I I -VI group semiconductor or an organic semiconductor.
The graphene switching device of claim 1, wherein the Page 2 Application No. 14/265,670 Attorney Docket No. 2557 SI -002121-US graphene layer is separated from the second electrode.
The graphene switching device of claim 1, wherein a distance between the graphene layer and the second electrode is in a range from about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the gate insulating layer comprises a polymer.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having the same po l arity as a polarity of impurities of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires form an energy gap between the graphene layer and the second electrode, and the energy gap is configured to be varied according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer comprises one to four graphene layers.
The graphene switching device of claim 1, wherein the substrate comprises a plastic.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are distributed in a network form. Page 3 Application No. 14/265,670 Attorney Docket No. 2557S I -002121-US
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are configured to be parallel to one another.
The graphene switching device of claim 1, wherein the graphene switching device is flexible.
14-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device (flexible unipolar transistor)
Materials described outside the worked examples.
graphene
semiconductor nanowires
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–30 nm | — |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
Patent
Atlas literature
Patent
US 9,324,805Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a flexible graphene switching device including semiconductor nanowires according to example embodiments; …
FIG. 2 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0025]
FIG. 3 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0026]
FIGS. 4A and 4B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; [0027]
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIGS. 6A and 6B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; and [0029]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device comprising: a graphene layer on a substrate; a plurality of semiconductor nanowires on the substrate, at least one of the plurality of semiconductor nanowires being connected to a first end of the graphene layer; a first electrode connected to a second end of the graphene layer; a second electrode on the substrate facing the first electrode so as to be connected to the plurality of semiconductor nanowires; a gate insulating layer on the substrate to cover the graphene layer; and a gate electrode on the gate insulating layer, wherein the gate electrode and the plurality of semiconductor nanowires face each other with the graphene layer therebetween, and at least one of the plurality of semiconductor nanowires is connected to at least one of the second electrode, the graphene layer, and the other of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are doped with n-type or p-type impurities.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires include silicon, germanium, silicon-germanium, a I II -V Group semiconductor, a I I -VI group semiconductor or an organic semiconductor.
The graphene switching device of claim 1, wherein the Page 2 Application No. 14/265,670 Attorney Docket No. 2557 SI -002121-US graphene layer is separated from the second electrode.
The graphene switching device of claim 1, wherein a distance between the graphene layer and the second electrode is in a range from about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the gate insulating layer comprises a polymer.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having the same po l arity as a polarity of impurities of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires form an energy gap between the graphene layer and the second electrode, and the energy gap is configured to be varied according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer comprises one to four graphene layers.
The graphene switching device of claim 1, wherein the substrate comprises a plastic.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are distributed in a network form. Page 3 Application No. 14/265,670 Attorney Docket No. 2557S I -002121-US
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are configured to be parallel to one another.
The graphene switching device of claim 1, wherein the graphene switching device is flexible.
14-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device (flexible unipolar transistor)
Materials described outside the worked examples.
graphene
semiconductor nanowires
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–30 nm | — |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
Patent
Atlas literature
Patent
US 9,324,805Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a flexible graphene switching device including semiconductor nanowires according to example embodiments; …
FIG. 2 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0025]
FIG. 3 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0026]
FIGS. 4A and 4B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; [0027]
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIGS. 6A and 6B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; and [0029]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device comprising: a graphene layer on a substrate; a plurality of semiconductor nanowires on the substrate, at least one of the plurality of semiconductor nanowires being connected to a first end of the graphene layer; a first electrode connected to a second end of the graphene layer; a second electrode on the substrate facing the first electrode so as to be connected to the plurality of semiconductor nanowires; a gate insulating layer on the substrate to cover the graphene layer; and a gate electrode on the gate insulating layer, wherein the gate electrode and the plurality of semiconductor nanowires face each other with the graphene layer therebetween, and at least one of the plurality of semiconductor nanowires is connected to at least one of the second electrode, the graphene layer, and the other of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are doped with n-type or p-type impurities.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires include silicon, germanium, silicon-germanium, a I II -V Group semiconductor, a I I -VI group semiconductor or an organic semiconductor.
The graphene switching device of claim 1, wherein the Page 2 Application No. 14/265,670 Attorney Docket No. 2557 SI -002121-US graphene layer is separated from the second electrode.
The graphene switching device of claim 1, wherein a distance between the graphene layer and the second electrode is in a range from about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the gate insulating layer comprises a polymer.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having the same po l arity as a polarity of impurities of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires form an energy gap between the graphene layer and the second electrode, and the energy gap is configured to be varied according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer comprises one to four graphene layers.
The graphene switching device of claim 1, wherein the substrate comprises a plastic.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are distributed in a network form. Page 3 Application No. 14/265,670 Attorney Docket No. 2557S I -002121-US
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are configured to be parallel to one another.
The graphene switching device of claim 1, wherein the graphene switching device is flexible.
14-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device (flexible unipolar transistor)
Materials described outside the worked examples.
graphene
semiconductor nanowires
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–30 nm | — |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
Patent
Atlas literature
Patent
US 9,324,805Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a flexible graphene switching device including semiconductor nanowires according to example embodiments; …
FIG. 2 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0025]
FIG. 3 is a plan view illustrating an arrangement of semiconductor nanowires according to example embodiments; [0026]
FIGS. 4A and 4B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; [0027]
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIGS. 6A and 6B are energy band diagrams to explain an operation of a graphene switching device according to example embodiments; and [0029]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene switching device comprising: a graphene layer on a substrate; a plurality of semiconductor nanowires on the substrate, at least one of the plurality of semiconductor nanowires being connected to a first end of the graphene layer; a first electrode connected to a second end of the graphene layer; a second electrode on the substrate facing the first electrode so as to be connected to the plurality of semiconductor nanowires; a gate insulating layer on the substrate to cover the graphene layer; and a gate electrode on the gate insulating layer, wherein the gate electrode and the plurality of semiconductor nanowires face each other with the graphene layer therebetween, and at least one of the plurality of semiconductor nanowires is connected to at least one of the second electrode, the graphene layer, and the other of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are doped with n-type or p-type impurities.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires include silicon, germanium, silicon-germanium, a I II -V Group semiconductor, a I I -VI group semiconductor or an organic semiconductor.
The graphene switching device of claim 1, wherein the Page 2 Application No. 14/265,670 Attorney Docket No. 2557 SI -002121-US graphene layer is separated from the second electrode.
The graphene switching device of claim 1, wherein a distance between the graphene layer and the second electrode is in a range from about 1 nm to about 30 nm.
The graphene switching device of claim 1, wherein the gate insulating layer comprises a polymer.
The graphene switching device of claim 1, wherein the graphene switching device is a unipolar transistor having the same po l arity as a polarity of impurities of the plurality of semiconductor nanowires.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires form an energy gap between the graphene layer and the second electrode, and the energy gap is configured to be varied according to a gate voltage applied to the gate electrode.
The graphene switching device of claim 1, wherein the graphene layer comprises one to four graphene layers.
The graphene switching device of claim 1, wherein the substrate comprises a plastic.
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are distributed in a network form. Page 3 Application No. 14/265,670 Attorney Docket No. 2557S I -002121-US
The graphene switching device of claim 1, wherein the plurality of semiconductor nanowires are configured to be parallel to one another.
The graphene switching device of claim 1, wherein the graphene switching device is flexible.
14-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene switching device (flexible unipolar transistor)
Materials described outside the worked examples.
graphene
semiconductor nanowires
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–30 nm | — |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
silicon
Si
germanium
Ge
silicon-germanium
SiGe
polymer gate insulating layer
plastic substrate
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
silicon
Si
germanium
Ge
silicon-germanium
SiGe
polymer gate insulating layer
plastic substrate
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
silicon
Si
germanium
Ge
silicon-germanium
SiGe
polymer gate insulating layer
plastic substrate
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
silicon
Si
germanium
Ge
silicon-germanium
SiGe
polymer gate insulating layer
plastic substrate
FIG. 5 is an I-V curve of an n-type graphene switching device according to example embodiments; [0028]
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.
FIG. 7 is an I-V curve of a graphene switching device according to example embodiments.