Patent
US 9,704,964flexible graphene device with gallium-indium-tin liquid metal contacts
flexible material (substrate)
dielectric material (substrate)
polymer (dielectric substrate)
gallium-based alloy
gallium-indium-tin alloy
synthetic organic-based encasing material
monolayer graphene
multilayer graphene
graphene microstructures
graphene nanostructures
Galinstan
FIG. 2 shows a diagram 100 illustrating a method for making electrical contact using a solid metal layer 110 having liquid metal 120 disposed thereon, with …
FIG. 3B. In some embodiments, conductive traces 230 and 240 have impedance matching to any of the devices integrated on an external circuit. Further, in some …
FIG. 6 shows a graph 500 illustrating test results for the change in resistance as a result of liquid- metal oxidization for a two-hour period using various …
FIGS. 7 and 8 show graphs illustrating results from bend tests conducted on an embodiment of a device as disclosed herein. For the bend tests, the device was …
FIG. 8 shows a graph illustrating a change in resistance as a function of bend cycle number for two separate bend tests performed on an embodiment of …
| — |
Pressure | 0.000001 Pa | — |
Temperature | ≥ 1300 °C | — |
flexible graphene device with gallium-indium-tin liquid metal contacts
flexible material (substrate)
dielectric material (substrate)
polymer (dielectric substrate)
gallium-based alloy
gallium-indium-tin alloy
synthetic organic-based encasing material
monolayer graphene
multilayer graphene
graphene microstructures
graphene nanostructures
Galinstan
FIG. 2 shows a diagram 100 illustrating a method for making electrical contact using a solid metal layer 110 having liquid metal 120 disposed thereon, with …
FIG. 3B. In some embodiments, conductive traces 230 and 240 have impedance matching to any of the devices integrated on an external circuit. Further, in some …
FIG. 6 shows a graph 500 illustrating test results for the change in resistance as a result of liquid- metal oxidization for a two-hour period using various …
FIGS. 7 and 8 show graphs illustrating results from bend tests conducted on an embodiment of a device as disclosed herein. For the bend tests, the device was …
FIG. 8 shows a graph illustrating a change in resistance as a function of bend cycle number for two separate bend tests performed on an embodiment of …
| — |
Pressure | 0.000001 Pa | — |
Temperature | ≥ 1300 °C | — |
flexible graphene device with gallium-indium-tin liquid metal contacts
flexible material (substrate)
dielectric material (substrate)
polymer (dielectric substrate)
gallium-based alloy
gallium-indium-tin alloy
synthetic organic-based encasing material
monolayer graphene
multilayer graphene
graphene microstructures
graphene nanostructures
Galinstan
FIG. 2 shows a diagram 100 illustrating a method for making electrical contact using a solid metal layer 110 having liquid metal 120 disposed thereon, with …
FIG. 3B. In some embodiments, conductive traces 230 and 240 have impedance matching to any of the devices integrated on an external circuit. Further, in some …
FIG. 6 shows a graph 500 illustrating test results for the change in resistance as a result of liquid- metal oxidization for a two-hour period using various …
FIGS. 7 and 8 show graphs illustrating results from bend tests conducted on an embodiment of a device as disclosed herein. For the bend tests, the device was …
FIG. 8 shows a graph illustrating a change in resistance as a function of bend cycle number for two separate bend tests performed on an embodiment of …
| — |
Pressure | 0.000001 Pa | — |
Temperature | ≥ 1300 °C | — |
flexible graphene device with gallium-indium-tin liquid metal contacts
flexible material (substrate)
dielectric material (substrate)
polymer (dielectric substrate)
gallium-based alloy
gallium-indium-tin alloy
synthetic organic-based encasing material
monolayer graphene
multilayer graphene
graphene microstructures
graphene nanostructures
Galinstan
FIG. 2 shows a diagram 100 illustrating a method for making electrical contact using a solid metal layer 110 having liquid metal 120 disposed thereon, with …
FIG. 3B. In some embodiments, conductive traces 230 and 240 have impedance matching to any of the devices integrated on an external circuit. Further, in some …
FIG. 6 shows a graph 500 illustrating test results for the change in resistance as a result of liquid- metal oxidization for a two-hour period using various …
FIGS. 7 and 8 show graphs illustrating results from bend tests conducted on an embodiment of a device as disclosed herein. For the bend tests, the device was …
FIG. 8 shows a graph illustrating a change in resistance as a function of bend cycle number for two separate bend tests performed on an embodiment of …
| — |
Pressure | 0.000001 Pa | — |
Temperature | ≥ 1300 °C | — |