GALLIUM NITRIDE AND SILICON CARBIDE HYBRID POWER DEVICE

James G. Fiorenza; Puneet Srivastava; Daniel Piedra

Patent

Atlas literature

Patent

US 11,637,096 B2

GALLIUM NITRIDE AND SILICON CARBIDE HYBRID POWER DEVICE

James G. Fiorenza, Puneet Srivastava, Daniel Piedra

Analog Devices, Inc., Wilmington, MA (US)·Apr. 25, 2023·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 depicts a cross-sectional diagram of a hybrid silicon carbide device, according to various examples.

FIG. 2

FIGS. 2A-2C depict semiconductor structures that corre- spond to process steps for obtaining, or fabricating, a top device structure of a hybrid silicon …

FIG. 3

FIG. 3A-3E depict semiconductor structures that corre- spond to process steps for obtaining, or fabricating, a silicon carbide device structure of a hybrid …

FIG. 4

FIG. 4A-4C depict semiconductor structures that corre- spond to process steps for bonding a silicon carbide device structure with a device structure that is …

FIG. 5

FIG. 5 depicts a cross-sectional diagram of a hybrid silicon carbide power device, according to various examples.

FIG. 6

FIGS. 6A-6E depict semiconductor structures that corre- spond to process steps for fabricating a hybrid silicon carbide power device, according to various …

FIG. 7

FIG. 7A-7C depict semiconductor structures that corre- spond to process steps for bonding devices structures to form a hybrid silicon carbide power device, …

FIG. 8

FIG. 8 depicts a set of operations of a process for fabricating a hybrid silicon carbide device, according to various examples.

FIG. 9

FIG. 9 depicts a set of operations of another process for fabricating a hybrid silicon carbide device, according to various examples. In the drawings, which …

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

hybrid silicon carbide (SiC) device

SiCcontact region (n+)

SiCbody layer (p+)

SiCdrift layer (n-)

SiCsubstrate (n+)

bottom device structure (SiC power MOSFET/body diode)

SiCn+ contact region

Materials

Materials described outside the worked examples.

silicon carbide (n+)

SiC

Substrate

Drift LayerBody Layer

silicon (Si)

Cited prior art

Patents and literature cited by this patent (applicant and examiner references).

Cited patents · 24

US 5,258,318 A5,258,318 A 11/1993 Buti et al.
US 8,013,391 B28,013,391 B2 9/2011 Yedinak et al.
JP 2008112774 AJP 2008112774 A 5/2008
JP 2011134910 AJP 2011134910 A 7/2011
US 8,431,991 B28,431,991 B2 4/2013 Iwamuro
US 8,637,360 B28,637,360 B2 1/2014 Hebert
US 8,884,309 B28,884,309 B2 11/2014 Miura

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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