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Gallium Nitride Transistor | Matter42 Literature

Patent

Atlas literature

Patent

US 10,964,806

Gallium Nitride Transistor

Giorgia LONGOBARDI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

FIG. 21

FIG. 22

FIG. 23

FIG. 24

FIG. 25

FIG. 26

FIG. 27

FIG. 28

FIG. 29

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 14 dependent

1
IndependentGaNAlGaNtwo dimensional electron gasIII-nitride semiconductor based heterojunction power device (HEMT)
A I II -nitride semiconductor based heterojunction power device, comprising: a substrate; a I II -nitride semiconductor region formed over the substrate; a source operatively connected to the I II -nitride semiconductor region; a drain laterally spaced from the source and operatively connected to the I II -nitride semiconductor region; a gate formed over the I II -nitride semiconductor region, the gate being formed between the source and drain; wherein the I II -nitride semiconductor region comprises: a ﬁrst portion formed between the source and gate, wherein the source is in contact with the ﬁrst portion, wherein the ﬁrst portion comprises a heterojunction; a second portion formed between the gate and drain, wherein the drain is in contact with the second portion, wherein the second portion comprises [[a]] said heterojunction; wherein the hetero i unction of the ﬁrst portion and the second portion of the I II -nitride semiconductor re g ion further comprises: a ﬁrst I II -nitride semiconductor l aver havin q a ﬁrst band q ap formed over the substrate; a second I II -nitride semiconductor layer havin g a second band gap diﬀerent from the ﬁrst band g ap disposed on the ﬁrst I II -nitride semiconductor l aver; and a two dimensional carrier g as formed between the ﬁrst and second I II- nitride semiconductor layers to provide a channel; SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.1.svg 0.16 6.11 Black and white region further comprises: at least one trench having sidewalls and being formed only within the III- nitride semiconductor region; mesa regions each extending away from each sidewall of the at least one trench; wherein said two dimensional carrier gas is located alongside the mesa regions and alongside the at least one trench; wherein at least one of the source and drain which is respectively in contact with the at least one of the ﬁrst and second portions is in contact with said two dimensional carrier gas located alongside said at least one trench and alongside the mesa regions of the at least one of the ﬁrst and second portions of the III- nitride semiconductor region; and wherein the ﬁrst I II -nitride semiconductor layer of the second portion comprises said at least one trench and mesa re g ions, and wherein the ﬁrst I II -nitride semiconductor layer of the ﬁrst portion does not comprise said at least one trench and mesa re g ions. Currently amended
1. 2
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, wherein either: (i) said sidewalls are at an angle from the horizontal plane of less than 9 0°; or (ii) the angle from the horizontal plane is about 9 0 such that the sidewalls are substantially vertical. Original
2. 15
  Dependent← claim 1GaNAlGaNAlNSiIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a buﬀer layer between the I II -nitride semiconductor region and the substrate, wherein the substrate is a silicon substrate, and optionally wherein either: (i) the buﬀer layer comprises a single layer of aluminium gallium nitride (AIGaN) or aluminium nitride (AIN); or (ii) the buﬀer layer comprises a multilayer stack comprising a composition of aluminium gallium nitride (AIGaN) with varying aluminium concentration and gallium nitride (GaN). Original
3. 16
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a passivation layer formed on the I II -nitride semiconductor region along the at least one trench and on the mesa regions. Original
4
IndependentAlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
A heterojunction power device according to claim [[3]] 1, wherein either: (i) wherein the second I II -nitride semiconductor layer is disposed along the vertical sidewalls of the at least one trench and the mesa region; or SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.2.svg 0.16 5.95 Black and white, wherein the second I II -nitride semiconductor layer is disposed by ﬁlling the at least one trench and along the mesa region. Currently amended
1. 6
  Dependent← claim 4AlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 4, wherein the at least one trench comprises a bottom surface between the vertical sidewalls, and the second I II -nitride semiconductor layer is disposed on the bottom surface of the at least one trench; optionally wherein the channel is formed along the vertical sidewalls and the bottom surface of the at least one trench and along the mesa regions; optionally wherein the channel comprises vertical portions along the vertical sidewalls and lateral portions along the bottom surface and along the mesa regions within the heterojunction; optionally wherein the vertical sidewalls of the at least one trench are closed to one another so that the channel formed along the vertical sidewalls are joined together; and optionally wherein the joined channel comprises a vertical portion along the vertical sidewalls and lateral portions along the mesa regions. Original
5
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

III-nitride semiconductor based heterojunction power device (HEMT)

two dimensional electron gaschannel 2DEG

AlGaNsecond III nitride layer barrier

GaNfirst III nitride layer channel

Sisubstrate

Materials

Materials described outside the worked examples.

gallium nitride

GaN

First III Nitride Semiconductor Layer Channel Material

aluminium gallium nitride

AlGaN

Second III Nitride Semiconductor Layer Barrier Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Patent

Atlas literature

Patent

US 10,964,806

Gallium Nitride Transistor

Giorgia LONGOBARDI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

FIG. 21

FIG. 22

FIG. 23

FIG. 24

FIG. 25

FIG. 26

FIG. 27

FIG. 28

FIG. 29

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 14 dependent

1
IndependentGaNAlGaNtwo dimensional electron gasIII-nitride semiconductor based heterojunction power device (HEMT)
A I II -nitride semiconductor based heterojunction power device, comprising: a substrate; a I II -nitride semiconductor region formed over the substrate; a source operatively connected to the I II -nitride semiconductor region; a drain laterally spaced from the source and operatively connected to the I II -nitride semiconductor region; a gate formed over the I II -nitride semiconductor region, the gate being formed between the source and drain; wherein the I II -nitride semiconductor region comprises: a ﬁrst portion formed between the source and gate, wherein the source is in contact with the ﬁrst portion, wherein the ﬁrst portion comprises a heterojunction; a second portion formed between the gate and drain, wherein the drain is in contact with the second portion, wherein the second portion comprises [[a]] said heterojunction; wherein the hetero i unction of the ﬁrst portion and the second portion of the I II -nitride semiconductor re g ion further comprises: a ﬁrst I II -nitride semiconductor l aver havin q a ﬁrst band q ap formed over the substrate; a second I II -nitride semiconductor layer havin g a second band gap diﬀerent from the ﬁrst band g ap disposed on the ﬁrst I II -nitride semiconductor l aver; and a two dimensional carrier g as formed between the ﬁrst and second I II- nitride semiconductor layers to provide a channel; SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.1.svg 0.16 6.11 Black and white region further comprises: at least one trench having sidewalls and being formed only within the III- nitride semiconductor region; mesa regions each extending away from each sidewall of the at least one trench; wherein said two dimensional carrier gas is located alongside the mesa regions and alongside the at least one trench; wherein at least one of the source and drain which is respectively in contact with the at least one of the ﬁrst and second portions is in contact with said two dimensional carrier gas located alongside said at least one trench and alongside the mesa regions of the at least one of the ﬁrst and second portions of the III- nitride semiconductor region; and wherein the ﬁrst I II -nitride semiconductor layer of the second portion comprises said at least one trench and mesa re g ions, and wherein the ﬁrst I II -nitride semiconductor layer of the ﬁrst portion does not comprise said at least one trench and mesa re g ions. Currently amended
1. 2
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, wherein either: (i) said sidewalls are at an angle from the horizontal plane of less than 9 0°; or (ii) the angle from the horizontal plane is about 9 0 such that the sidewalls are substantially vertical. Original
2. 15
  Dependent← claim 1GaNAlGaNAlNSiIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a buﬀer layer between the I II -nitride semiconductor region and the substrate, wherein the substrate is a silicon substrate, and optionally wherein either: (i) the buﬀer layer comprises a single layer of aluminium gallium nitride (AIGaN) or aluminium nitride (AIN); or (ii) the buﬀer layer comprises a multilayer stack comprising a composition of aluminium gallium nitride (AIGaN) with varying aluminium concentration and gallium nitride (GaN). Original
3. 16
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a passivation layer formed on the I II -nitride semiconductor region along the at least one trench and on the mesa regions. Original
4
IndependentAlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
A heterojunction power device according to claim [[3]] 1, wherein either: (i) wherein the second I II -nitride semiconductor layer is disposed along the vertical sidewalls of the at least one trench and the mesa region; or SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.2.svg 0.16 5.95 Black and white, wherein the second I II -nitride semiconductor layer is disposed by ﬁlling the at least one trench and along the mesa region. Currently amended
1. 6
  Dependent← claim 4AlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 4, wherein the at least one trench comprises a bottom surface between the vertical sidewalls, and the second I II -nitride semiconductor layer is disposed on the bottom surface of the at least one trench; optionally wherein the channel is formed along the vertical sidewalls and the bottom surface of the at least one trench and along the mesa regions; optionally wherein the channel comprises vertical portions along the vertical sidewalls and lateral portions along the bottom surface and along the mesa regions within the heterojunction; optionally wherein the vertical sidewalls of the at least one trench are closed to one another so that the channel formed along the vertical sidewalls are joined together; and optionally wherein the joined channel comprises a vertical portion along the vertical sidewalls and lateral portions along the mesa regions. Original
5
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

III-nitride semiconductor based heterojunction power device (HEMT)

two dimensional electron gaschannel 2DEG

AlGaNsecond III nitride layer barrier

GaNfirst III nitride layer channel

Sisubstrate

Materials

Materials described outside the worked examples.

gallium nitride

GaN

First III Nitride Semiconductor Layer Channel Material

aluminium gallium nitride

AlGaN

Second III Nitride Semiconductor Layer Barrier Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Patent

Atlas literature

Patent

US 10,964,806

Gallium Nitride Transistor

Giorgia LONGOBARDI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

FIG. 21

FIG. 22

FIG. 23

FIG. 24

FIG. 25

FIG. 26

FIG. 27

FIG. 28

FIG. 29

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 14 dependent

1
IndependentGaNAlGaNtwo dimensional electron gasIII-nitride semiconductor based heterojunction power device (HEMT)
A I II -nitride semiconductor based heterojunction power device, comprising: a substrate; a I II -nitride semiconductor region formed over the substrate; a source operatively connected to the I II -nitride semiconductor region; a drain laterally spaced from the source and operatively connected to the I II -nitride semiconductor region; a gate formed over the I II -nitride semiconductor region, the gate being formed between the source and drain; wherein the I II -nitride semiconductor region comprises: a ﬁrst portion formed between the source and gate, wherein the source is in contact with the ﬁrst portion, wherein the ﬁrst portion comprises a heterojunction; a second portion formed between the gate and drain, wherein the drain is in contact with the second portion, wherein the second portion comprises [[a]] said heterojunction; wherein the hetero i unction of the ﬁrst portion and the second portion of the I II -nitride semiconductor re g ion further comprises: a ﬁrst I II -nitride semiconductor l aver havin q a ﬁrst band q ap formed over the substrate; a second I II -nitride semiconductor layer havin g a second band gap diﬀerent from the ﬁrst band g ap disposed on the ﬁrst I II -nitride semiconductor l aver; and a two dimensional carrier g as formed between the ﬁrst and second I II- nitride semiconductor layers to provide a channel; SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.1.svg 0.16 6.11 Black and white region further comprises: at least one trench having sidewalls and being formed only within the III- nitride semiconductor region; mesa regions each extending away from each sidewall of the at least one trench; wherein said two dimensional carrier gas is located alongside the mesa regions and alongside the at least one trench; wherein at least one of the source and drain which is respectively in contact with the at least one of the ﬁrst and second portions is in contact with said two dimensional carrier gas located alongside said at least one trench and alongside the mesa regions of the at least one of the ﬁrst and second portions of the III- nitride semiconductor region; and wherein the ﬁrst I II -nitride semiconductor layer of the second portion comprises said at least one trench and mesa re g ions, and wherein the ﬁrst I II -nitride semiconductor layer of the ﬁrst portion does not comprise said at least one trench and mesa re g ions. Currently amended
1. 2
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, wherein either: (i) said sidewalls are at an angle from the horizontal plane of less than 9 0°; or (ii) the angle from the horizontal plane is about 9 0 such that the sidewalls are substantially vertical. Original
2. 15
  Dependent← claim 1GaNAlGaNAlNSiIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a buﬀer layer between the I II -nitride semiconductor region and the substrate, wherein the substrate is a silicon substrate, and optionally wherein either: (i) the buﬀer layer comprises a single layer of aluminium gallium nitride (AIGaN) or aluminium nitride (AIN); or (ii) the buﬀer layer comprises a multilayer stack comprising a composition of aluminium gallium nitride (AIGaN) with varying aluminium concentration and gallium nitride (GaN). Original
3. 16
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a passivation layer formed on the I II -nitride semiconductor region along the at least one trench and on the mesa regions. Original
4
IndependentAlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
A heterojunction power device according to claim [[3]] 1, wherein either: (i) wherein the second I II -nitride semiconductor layer is disposed along the vertical sidewalls of the at least one trench and the mesa region; or SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.2.svg 0.16 5.95 Black and white, wherein the second I II -nitride semiconductor layer is disposed by ﬁlling the at least one trench and along the mesa region. Currently amended
1. 6
  Dependent← claim 4AlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 4, wherein the at least one trench comprises a bottom surface between the vertical sidewalls, and the second I II -nitride semiconductor layer is disposed on the bottom surface of the at least one trench; optionally wherein the channel is formed along the vertical sidewalls and the bottom surface of the at least one trench and along the mesa regions; optionally wherein the channel comprises vertical portions along the vertical sidewalls and lateral portions along the bottom surface and along the mesa regions within the heterojunction; optionally wherein the vertical sidewalls of the at least one trench are closed to one another so that the channel formed along the vertical sidewalls are joined together; and optionally wherein the joined channel comprises a vertical portion along the vertical sidewalls and lateral portions along the mesa regions. Original
5
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

III-nitride semiconductor based heterojunction power device (HEMT)

two dimensional electron gaschannel 2DEG

AlGaNsecond III nitride layer barrier

GaNfirst III nitride layer channel

Sisubstrate

Materials

Materials described outside the worked examples.

gallium nitride

GaN

First III Nitride Semiconductor Layer Channel Material

aluminium gallium nitride

AlGaN

Second III Nitride Semiconductor Layer Barrier Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Patent

Atlas literature

Patent

US 10,964,806

Gallium Nitride Transistor

Giorgia LONGOBARDI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

FIG. 21

FIG. 22

FIG. 23

FIG. 24

FIG. 25

FIG. 26

FIG. 27

FIG. 28

FIG. 29

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 14 dependent

1
IndependentGaNAlGaNtwo dimensional electron gasIII-nitride semiconductor based heterojunction power device (HEMT)
A I II -nitride semiconductor based heterojunction power device, comprising: a substrate; a I II -nitride semiconductor region formed over the substrate; a source operatively connected to the I II -nitride semiconductor region; a drain laterally spaced from the source and operatively connected to the I II -nitride semiconductor region; a gate formed over the I II -nitride semiconductor region, the gate being formed between the source and drain; wherein the I II -nitride semiconductor region comprises: a ﬁrst portion formed between the source and gate, wherein the source is in contact with the ﬁrst portion, wherein the ﬁrst portion comprises a heterojunction; a second portion formed between the gate and drain, wherein the drain is in contact with the second portion, wherein the second portion comprises [[a]] said heterojunction; wherein the hetero i unction of the ﬁrst portion and the second portion of the I II -nitride semiconductor re g ion further comprises: a ﬁrst I II -nitride semiconductor l aver havin q a ﬁrst band q ap formed over the substrate; a second I II -nitride semiconductor layer havin g a second band gap diﬀerent from the ﬁrst band g ap disposed on the ﬁrst I II -nitride semiconductor l aver; and a two dimensional carrier g as formed between the ﬁrst and second I II- nitride semiconductor layers to provide a channel; SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.1.svg 0.16 6.11 Black and white region further comprises: at least one trench having sidewalls and being formed only within the III- nitride semiconductor region; mesa regions each extending away from each sidewall of the at least one trench; wherein said two dimensional carrier gas is located alongside the mesa regions and alongside the at least one trench; wherein at least one of the source and drain which is respectively in contact with the at least one of the ﬁrst and second portions is in contact with said two dimensional carrier gas located alongside said at least one trench and alongside the mesa regions of the at least one of the ﬁrst and second portions of the III- nitride semiconductor region; and wherein the ﬁrst I II -nitride semiconductor layer of the second portion comprises said at least one trench and mesa re g ions, and wherein the ﬁrst I II -nitride semiconductor layer of the ﬁrst portion does not comprise said at least one trench and mesa re g ions. Currently amended
1. 2
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, wherein either: (i) said sidewalls are at an angle from the horizontal plane of less than 9 0°; or (ii) the angle from the horizontal plane is about 9 0 such that the sidewalls are substantially vertical. Original
2. 15
  Dependent← claim 1GaNAlGaNAlNSiIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a buﬀer layer between the I II -nitride semiconductor region and the substrate, wherein the substrate is a silicon substrate, and optionally wherein either: (i) the buﬀer layer comprises a single layer of aluminium gallium nitride (AIGaN) or aluminium nitride (AIN); or (ii) the buﬀer layer comprises a multilayer stack comprising a composition of aluminium gallium nitride (AIGaN) with varying aluminium concentration and gallium nitride (GaN). Original
3. 16
  Dependent← claim 1III-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 1, further comprising a passivation layer formed on the I II -nitride semiconductor region along the at least one trench and on the mesa regions. Original
4
IndependentAlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
A heterojunction power device according to claim [[3]] 1, wherein either: (i) wherein the second I II -nitride semiconductor layer is disposed along the vertical sidewalls of the at least one trench and the mesa region; or SVG 16421774.11-16-2020.KHKOMCQOLDFLYX9.CLM.2.svg 0.16 5.95 Black and white, wherein the second I II -nitride semiconductor layer is disposed by ﬁlling the at least one trench and along the mesa region. Currently amended
1. 6
  Dependent← claim 4AlGaNIII-nitride semiconductor based heterojunction power device (HEMT)
  A heterojunction power device according to claim 4, wherein the at least one trench comprises a bottom surface between the vertical sidewalls, and the second I II -nitride semiconductor layer is disposed on the bottom surface of the at least one trench; optionally wherein the channel is formed along the vertical sidewalls and the bottom surface of the at least one trench and along the mesa regions; optionally wherein the channel comprises vertical portions along the vertical sidewalls and lateral portions along the bottom surface and along the mesa regions within the heterojunction; optionally wherein the vertical sidewalls of the at least one trench are closed to one another so that the channel formed along the vertical sidewalls are joined together; and optionally wherein the joined channel comprises a vertical portion along the vertical sidewalls and lateral portions along the mesa regions. Original
5
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

III-nitride semiconductor based heterojunction power device (HEMT)

two dimensional electron gaschannel 2DEG

AlGaNsecond III nitride layer barrier

GaNfirst III nitride layer channel

Sisubstrate

Materials

Materials described outside the worked examples.

gallium nitride

GaN

First III Nitride Semiconductor Layer Channel Material

aluminium gallium nitride

AlGaN

Second III Nitride Semiconductor Layer Barrier Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.