Patent
Atlas literature
Patent
US 12,020,925 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow chart of a method for preparing an AlN based template having a Si substrate according to an embodiment of the disclosure;
FIGS. 2a to 2c are schematic process diagrams of a method for preparing an AlN based template having a Si substrate according to an embodiment of the …
FIGS. 3a to 3d are schematic process diagrams of a method for preparing a GaN based epitaxial structure having a Si substrate according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein growing an AlN nucleation layer on the Si substrate com-prises: growing theAlN nucleation layer on the Si substrate using one of a molecular beam epitaxy (MBE) method, a metal-organic chemical vapor deposition (MOCVD) method, a hydride vapor phase epitaxy (HVPE) method or a physical vapor deposition (PVD) method.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein introducing an ion passing through the AlN nucleation layer and into the Si substrate, and introducing another ion into the AlN nucleation layer, respectively comprise: introducing the ion passing through the AlN nucleation layer and into the Si substrate using an ion implantation method, and introducing the another ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein growing an AlN nucleation layer on the Si substrate comprises: growing theAlN nucleation layer on the Si substrate using one of an MBE method, an MOCVD method, an HVPE method, or a PVD method.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein introducing a first ion passing through the AlN nucleation layer and into the Si substrate, and introducing a second ion into the AlN nucleation layer, respectively com-prises: introducing the first ion passing through the AlN nucle-ation layer and into the Si substrate using an ion implantation method, and introducing the second ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.
The method for preparing the AlN based template having the Si substrate according to claim 11, wherein the first ion introduced into the Si substrate comprises one or more ions selected from the group consisting of Ar, N, H, F, As and P; and the second ion introduced into the AlN nucleation layer comprises one or more ions selected from the group consisting of Fe, C and Mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlN based template having Si substrate
GaN based epitaxial structure having Si substrate
Materials described outside the worked examples.
AlN nucleation layer
AlN
Si substrate
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1500 µm | — |
Thickness | 10–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,020,925 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow chart of a method for preparing an AlN based template having a Si substrate according to an embodiment of the disclosure;
FIGS. 2a to 2c are schematic process diagrams of a method for preparing an AlN based template having a Si substrate according to an embodiment of the …
FIGS. 3a to 3d are schematic process diagrams of a method for preparing a GaN based epitaxial structure having a Si substrate according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein growing an AlN nucleation layer on the Si substrate com-prises: growing theAlN nucleation layer on the Si substrate using one of a molecular beam epitaxy (MBE) method, a metal-organic chemical vapor deposition (MOCVD) method, a hydride vapor phase epitaxy (HVPE) method or a physical vapor deposition (PVD) method.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein introducing an ion passing through the AlN nucleation layer and into the Si substrate, and introducing another ion into the AlN nucleation layer, respectively comprise: introducing the ion passing through the AlN nucleation layer and into the Si substrate using an ion implantation method, and introducing the another ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein growing an AlN nucleation layer on the Si substrate comprises: growing theAlN nucleation layer on the Si substrate using one of an MBE method, an MOCVD method, an HVPE method, or a PVD method.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein introducing a first ion passing through the AlN nucleation layer and into the Si substrate, and introducing a second ion into the AlN nucleation layer, respectively com-prises: introducing the first ion passing through the AlN nucle-ation layer and into the Si substrate using an ion implantation method, and introducing the second ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.
The method for preparing the AlN based template having the Si substrate according to claim 11, wherein the first ion introduced into the Si substrate comprises one or more ions selected from the group consisting of Ar, N, H, F, As and P; and the second ion introduced into the AlN nucleation layer comprises one or more ions selected from the group consisting of Fe, C and Mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlN based template having Si substrate
GaN based epitaxial structure having Si substrate
Materials described outside the worked examples.
AlN nucleation layer
AlN
Si substrate
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1500 µm | — |
Thickness | 10–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,020,925 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow chart of a method for preparing an AlN based template having a Si substrate according to an embodiment of the disclosure;
FIGS. 2a to 2c are schematic process diagrams of a method for preparing an AlN based template having a Si substrate according to an embodiment of the …
FIGS. 3a to 3d are schematic process diagrams of a method for preparing a GaN based epitaxial structure having a Si substrate according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein growing an AlN nucleation layer on the Si substrate com-prises: growing theAlN nucleation layer on the Si substrate using one of a molecular beam epitaxy (MBE) method, a metal-organic chemical vapor deposition (MOCVD) method, a hydride vapor phase epitaxy (HVPE) method or a physical vapor deposition (PVD) method.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein introducing an ion passing through the AlN nucleation layer and into the Si substrate, and introducing another ion into the AlN nucleation layer, respectively comprise: introducing the ion passing through the AlN nucleation layer and into the Si substrate using an ion implantation method, and introducing the another ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein growing an AlN nucleation layer on the Si substrate comprises: growing theAlN nucleation layer on the Si substrate using one of an MBE method, an MOCVD method, an HVPE method, or a PVD method.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein introducing a first ion passing through the AlN nucleation layer and into the Si substrate, and introducing a second ion into the AlN nucleation layer, respectively com-prises: introducing the first ion passing through the AlN nucle-ation layer and into the Si substrate using an ion implantation method, and introducing the second ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.
The method for preparing the AlN based template having the Si substrate according to claim 11, wherein the first ion introduced into the Si substrate comprises one or more ions selected from the group consisting of Ar, N, H, F, As and P; and the second ion introduced into the AlN nucleation layer comprises one or more ions selected from the group consisting of Fe, C and Mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlN based template having Si substrate
GaN based epitaxial structure having Si substrate
Materials described outside the worked examples.
AlN nucleation layer
AlN
Si substrate
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1500 µm | — |
Thickness | 10–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,020,925 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic flow chart of a method for preparing an AlN based template having a Si substrate according to an embodiment of the disclosure;
FIGS. 2a to 2c are schematic process diagrams of a method for preparing an AlN based template having a Si substrate according to an embodiment of the …
FIGS. 3a to 3d are schematic process diagrams of a method for preparing a GaN based epitaxial structure having a Si substrate according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein growing an AlN nucleation layer on the Si substrate com-prises: growing theAlN nucleation layer on the Si substrate using one of a molecular beam epitaxy (MBE) method, a metal-organic chemical vapor deposition (MOCVD) method, a hydride vapor phase epitaxy (HVPE) method or a physical vapor deposition (PVD) method.
The method for preparing the AlN based template having the Si substrate according to claim 1, wherein introducing an ion passing through the AlN nucleation layer and into the Si substrate, and introducing another ion into the AlN nucleation layer, respectively comprise: introducing the ion passing through the AlN nucleation layer and into the Si substrate using an ion implantation method, and introducing the another ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein growing an AlN nucleation layer on the Si substrate comprises: growing theAlN nucleation layer on the Si substrate using one of an MBE method, an MOCVD method, an HVPE method, or a PVD method.
The method for preparing the GaN based epitaxial structure having the Si substrate according to claim 6, wherein introducing a first ion passing through the AlN nucleation layer and into the Si substrate, and introducing a second ion into the AlN nucleation layer, respectively com-prises: introducing the first ion passing through the AlN nucle-ation layer and into the Si substrate using an ion implantation method, and introducing the second ion into the AlN nucleation layer using an ion implantation method.
A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.
The method for preparing the AlN based template having the Si substrate according to claim 11, wherein the first ion introduced into the Si substrate comprises one or more ions selected from the group consisting of Ar, N, H, F, As and P; and the second ion introduced into the AlN nucleation layer comprises one or more ions selected from the group consisting of Fe, C and Mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
AlN based template having Si substrate
GaN based epitaxial structure having Si substrate
Materials described outside the worked examples.
AlN nucleation layer
AlN
Si substrate
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–1500 µm | — |
Thickness | 10–500 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 4
Related documents with shared materials, methods, properties, or citations.
GaN buffer layer
GaN
group III nitride transition layer
group III nitride heterostructure
| — |
GaN buffer layer
GaN
group III nitride transition layer
group III nitride heterostructure
| — |
GaN buffer layer
GaN
group III nitride transition layer
group III nitride heterostructure
| — |
GaN buffer layer
GaN
group III nitride transition layer
group III nitride heterostructure
| — |
