Patent
US 8,980,648Semiconductor Gallium Arsenide Compatible Epitaxial Ferroelectric Devices for Microwave Tunable Application
Jianhua Hao, Wen Huang, Zhibin Yang
US
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US 8,980,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a BST/STO/GaAs heterostructure according to one embodiment of the presently claimed in vention. The BST/STO/GaAs heterostructure of the present …
FIG. 2 shows a process flow diagram ill ustrat in g a method for fabricating the BST/STO/GaAs heterostructure according to one embodiment of the presently …
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 4, the pattern of the IDE possesses a total of 21 fingers with a finger length of 925 p m, a finger width of 5 p m, and a finger gap of 2 Pim. During the …
FIG. 5 is a graph show in g the dielectric constant and norma li zed dissipation factor of the layer of BST as a function of frequency for the BST/STO/GaAs …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 8. As shown in
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for fabricating a barium strontium titanate/strontium titanate/gallium arse ni de (BST/STO/GaAs) heterostructure, comprising provid in g a GaAs substrate, grow in g epitaxially at least one monocrystalline layer of STO on a surface of the GaAs substrate by a first laser molecular beam epitaxial (MBE) system, and grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by a second laser MBE system.
The method of claim 1, where in the first laser MBE system includes an oxygen flow in g pulsed laser molecular beam epitaxial system with an operation wavelength of 248 nm.
The method of claim 1, further comprising annea li ng the BST/STO/GaAs heterostructure at amb i ent temperature and at an oxygen partial pressure from 100-300 Pa after said grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by the second laser MBE system.
A barium strontium titanate/strontium titanate/gal li um arse ni de (BST/STO/GaAs) heterostructure fabricated by the method of claim 1 compris ing a GaAs substrate, Docket No P₇₁₇₂US 00 16 at least one monocrystalline layer of STO grown on a surface of the GaAs substrate, and at least one monocrystalline layer of BST grown on top of the monocrystalline layer of STO.
[1 00] BSTI I [100]STO II[11 0]GaAs, or an out-of-plane layer-substrate orientation of
Layer stacks claimed or described, ordered top of device to substrate.
BST/STO/GaAs heterostructure
Materials described outside the worked examples.
gallium arsenide
GaAs
strontium titanate
SrTiO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–25 nm | — |
Thickness | 3–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,980,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a BST/STO/GaAs heterostructure according to one embodiment of the presently claimed in vention. The BST/STO/GaAs heterostructure of the present …
FIG. 2 shows a process flow diagram ill ustrat in g a method for fabricating the BST/STO/GaAs heterostructure according to one embodiment of the presently …
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 4, the pattern of the IDE possesses a total of 21 fingers with a finger length of 925 p m, a finger width of 5 p m, and a finger gap of 2 Pim. During the …
FIG. 5 is a graph show in g the dielectric constant and norma li zed dissipation factor of the layer of BST as a function of frequency for the BST/STO/GaAs …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 8. As shown in
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for fabricating a barium strontium titanate/strontium titanate/gallium arse ni de (BST/STO/GaAs) heterostructure, comprising provid in g a GaAs substrate, grow in g epitaxially at least one monocrystalline layer of STO on a surface of the GaAs substrate by a first laser molecular beam epitaxial (MBE) system, and grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by a second laser MBE system.
The method of claim 1, where in the first laser MBE system includes an oxygen flow in g pulsed laser molecular beam epitaxial system with an operation wavelength of 248 nm.
The method of claim 1, further comprising annea li ng the BST/STO/GaAs heterostructure at amb i ent temperature and at an oxygen partial pressure from 100-300 Pa after said grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by the second laser MBE system.
A barium strontium titanate/strontium titanate/gal li um arse ni de (BST/STO/GaAs) heterostructure fabricated by the method of claim 1 compris ing a GaAs substrate, Docket No P₇₁₇₂US 00 16 at least one monocrystalline layer of STO grown on a surface of the GaAs substrate, and at least one monocrystalline layer of BST grown on top of the monocrystalline layer of STO.
[1 00] BSTI I [100]STO II[11 0]GaAs, or an out-of-plane layer-substrate orientation of
Layer stacks claimed or described, ordered top of device to substrate.
BST/STO/GaAs heterostructure
Materials described outside the worked examples.
gallium arsenide
GaAs
strontium titanate
SrTiO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–25 nm | — |
Thickness | 3–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,980,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a BST/STO/GaAs heterostructure according to one embodiment of the presently claimed in vention. The BST/STO/GaAs heterostructure of the present …
FIG. 2 shows a process flow diagram ill ustrat in g a method for fabricating the BST/STO/GaAs heterostructure according to one embodiment of the presently …
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 4, the pattern of the IDE possesses a total of 21 fingers with a finger length of 925 p m, a finger width of 5 p m, and a finger gap of 2 Pim. During the …
FIG. 5 is a graph show in g the dielectric constant and norma li zed dissipation factor of the layer of BST as a function of frequency for the BST/STO/GaAs …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 8. As shown in
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for fabricating a barium strontium titanate/strontium titanate/gallium arse ni de (BST/STO/GaAs) heterostructure, comprising provid in g a GaAs substrate, grow in g epitaxially at least one monocrystalline layer of STO on a surface of the GaAs substrate by a first laser molecular beam epitaxial (MBE) system, and grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by a second laser MBE system.
The method of claim 1, where in the first laser MBE system includes an oxygen flow in g pulsed laser molecular beam epitaxial system with an operation wavelength of 248 nm.
The method of claim 1, further comprising annea li ng the BST/STO/GaAs heterostructure at amb i ent temperature and at an oxygen partial pressure from 100-300 Pa after said grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by the second laser MBE system.
A barium strontium titanate/strontium titanate/gal li um arse ni de (BST/STO/GaAs) heterostructure fabricated by the method of claim 1 compris ing a GaAs substrate, Docket No P₇₁₇₂US 00 16 at least one monocrystalline layer of STO grown on a surface of the GaAs substrate, and at least one monocrystalline layer of BST grown on top of the monocrystalline layer of STO.
[1 00] BSTI I [100]STO II[11 0]GaAs, or an out-of-plane layer-substrate orientation of
Layer stacks claimed or described, ordered top of device to substrate.
BST/STO/GaAs heterostructure
Materials described outside the worked examples.
gallium arsenide
GaAs
strontium titanate
SrTiO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–25 nm | — |
Thickness | 3–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,980,648Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a BST/STO/GaAs heterostructure according to one embodiment of the presently claimed in vention. The BST/STO/GaAs heterostructure of the present …
FIG. 2 shows a process flow diagram ill ustrat in g a method for fabricating the BST/STO/GaAs heterostructure according to one embodiment of the presently …
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 4, the pattern of the IDE possesses a total of 21 fingers with a finger length of 925 p m, a finger width of 5 p m, and a finger gap of 2 Pim. During the …
FIG. 5 is a graph show in g the dielectric constant and norma li zed dissipation factor of the layer of BST as a function of frequency for the BST/STO/GaAs …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 8. As shown in
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for fabricating a barium strontium titanate/strontium titanate/gallium arse ni de (BST/STO/GaAs) heterostructure, comprising provid in g a GaAs substrate, grow in g epitaxially at least one monocrystalline layer of STO on a surface of the GaAs substrate by a first laser molecular beam epitaxial (MBE) system, and grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by a second laser MBE system.
The method of claim 1, where in the first laser MBE system includes an oxygen flow in g pulsed laser molecular beam epitaxial system with an operation wavelength of 248 nm.
The method of claim 1, further comprising annea li ng the BST/STO/GaAs heterostructure at amb i ent temperature and at an oxygen partial pressure from 100-300 Pa after said grow in g epitaxially at least one monocrystall in e layer of BST on top of the monocrystall in e layer of STO by the second laser MBE system.
A barium strontium titanate/strontium titanate/gal li um arse ni de (BST/STO/GaAs) heterostructure fabricated by the method of claim 1 compris ing a GaAs substrate, Docket No P₇₁₇₂US 00 16 at least one monocrystalline layer of STO grown on a surface of the GaAs substrate, and at least one monocrystalline layer of BST grown on top of the monocrystalline layer of STO.
[1 00] BSTI I [100]STO II[11 0]GaAs, or an out-of-plane layer-substrate orientation of
Layer stacks claimed or described, ordered top of device to substrate.
BST/STO/GaAs heterostructure
Materials described outside the worked examples.
gallium arsenide
GaAs
strontium titanate
SrTiO₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–25 nm | — |
Thickness | 3–5 nm |
Related documents with shared materials, methods, properties, or citations.
barium strontium titanate
Ba(1-x)SrxTiO₃
barium strontium titanate (x=0.3)
Ba0.7Sr0.3TiO₃
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
| — |
Pressure | 1–20 Pa | — |
Thickness | 5–10 nm | — |
Pressure | 100–300 Pa | — |
Pressure | 1 Pa | — |
barium strontium titanate
Ba(1-x)SrxTiO₃
barium strontium titanate (x=0.3)
Ba0.7Sr0.3TiO₃
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
| — |
Pressure | 1–20 Pa | — |
Thickness | 5–10 nm | — |
Pressure | 100–300 Pa | — |
Pressure | 1 Pa | — |
barium strontium titanate
Ba(1-x)SrxTiO₃
barium strontium titanate (x=0.3)
Ba0.7Sr0.3TiO₃
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
| — |
Pressure | 1–20 Pa | — |
Thickness | 5–10 nm | — |
Pressure | 100–300 Pa | — |
Pressure | 1 Pa | — |
barium strontium titanate
Ba(1-x)SrxTiO₃
barium strontium titanate (x=0.3)
Ba0.7Sr0.3TiO₃
FIG. 3A. This value is larger than that of the previously reported BST films on single-crystal substrates. For example, the FWHM values of BST layer grown on …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 6B. The value of tan 6 is found to be dependent on the temperature and frequency, rang in g from 0.021 to 0.045. [0040] To exam in e the feasibi li ty of …
FIG. 7. The results obta in ed from the heterostructure of the present in vention are superior than the performance measured from BST layer grown on high …
FIG. 9. The interdigital electrode (IDE) configuration is 21 pairs of f in gers in total with a finger length of 925 pt m, finger width of 5 pt m, and finger gap …
| — |
Pressure | 1–20 Pa | — |
Thickness | 5–10 nm | — |
Pressure | 100–300 Pa | — |
Pressure | 1 Pa | — |