Patent
US 12,476,632 B2TEMPERATURE-ADAPTIVE GATE DRIVER FOR GAN SWITCH
Syed Asif Eqbal, Arnesh Sen
Nov. 18, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,476,632 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
FIG. 5 is a simplified schematic of a first embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 6 is a simplified schematic of a second embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 7 is a simplified schematic of a third embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 8 is a simplified schematic of a fourth embodiment of temperature-adaptive gate driver in accordance with the invention.
FIG. 9 is a simplified schematic of a fifth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 10 is a simplified schematic of a sixth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 11 is a simplified schematic of a seventh embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 12 is a simplified schematic of an eighth embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 13 is a simplified schematic of a ninth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 14 is a simplified schematic of a tenth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIGS. 15, 16 and 17 illustrate of how V₁ can be fed from V₂ in the embodiments of a temperature-adaptive gate driver shown in
FIG. 16, resistor R₃₁ 1631 and resistor R₃₂ 1632 form a resistor divider. The common point of this resistor divider is connected to the gate of an e-mode GaN …
FIG. 17, an e-mode GaN device 1730 is connected in a diode-like fashion, i.e., gate connected to drain, with a positive side on voltage rail V₂ and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A temperature-adaptive gate driver for a GaN switch, comprising: a GaN switch disposed on a GaN substrate; a driver disposed on another substrate for outputting an on-state gate-to-source voltage to a gate terminal of the GaN switch; a gate-to-source voltage adjustment unit, disposed on the other substrate, for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes a temperature sense element for sensing tem-perature of the GaN switch; and wherein the on-state gate-to-source voltage is adjustable based, in part, on the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the temperature sense element is located near the GaN switch so that a temperature of the temperature sense element reflects the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit includes a resistor network coupled to the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the output signal outputted by the gate-to-source voltage adjustment unit to the driver is responsive to a temperature of the temperature sense ele-ment.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the on-state gate-to-source voltage of the GaN switch rises with a rise in temperature of the GaN switch in a pre-determined fashion.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit changes the on-state gate-to-source voltage according to a pre-determined scheme in response to the output signal of the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a silicon-based driver having a first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a GaN-based driver having first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, an output terminal for outputting a lower voltage to the gate-to-source voltage adjustment unit, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the other substrate is a silicon substrate.
A circuit, comprising: a GaN substrate; a GaN switch disposed on the GaN substrate, the GaN switch including a gate terminal; a driver disposed on another substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal; and a GaN gate-to-source voltage adjustment unit disposed on the other substrate, the GaN gate-to-source voltage adjustment unit for outputting an output signal to the GaN driver, wherein GaN gate-to-source voltage adjustment unit includes a temperature sense element for sensing temperature of the GaN switch, wherein the on-state gate-to-source voltage is based, in part, on the temperature of the GaN switch.
The circuit of claim 15, wherein the temperature sense element comprises an E-mode GaN device coupled to a resistor network.
The circuit of claim 15, wherein the other substrate is another GaN substrate.
A microelectronic package, comprising: a first GaN substrate in the microelectronic package; a GaN switch disposed on the first GaN substrate, the GaN switch including a gate terminal; a second substrate in the microelectronic package; a driver disposed on the second substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal, wherein the on-state gate-to-source voltage is based, in part, on temperature of the GaN switch; and a gate-to-source voltage adjustment unit disposed on the second substrate, the gate-to-source voltage adjustment unit for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes: a temperature sense element for sensing temperature of the GaN switch, a resistor network coupled to the temperature sense ele-ment, and 15 16 a regulator for receiving a feedback signal from the resistor network, the feedback signal based in part, on resistance of the temperature sense element, and for causing a value of the output signal to be responsive to a value of the feedback signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
temperature-adaptive gate driver for GaN switch
circuit with GaN switch and GaN gate-to-source voltage adjustment unit
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN HEMT threshold voltage range due to process variations | 0.5–2.2 | GaN |
typical VGS(on) for e-mode GaN device | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,476,632 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
FIG. 5 is a simplified schematic of a first embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 6 is a simplified schematic of a second embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 7 is a simplified schematic of a third embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 8 is a simplified schematic of a fourth embodiment of temperature-adaptive gate driver in accordance with the invention.
FIG. 9 is a simplified schematic of a fifth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 10 is a simplified schematic of a sixth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 11 is a simplified schematic of a seventh embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 12 is a simplified schematic of an eighth embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 13 is a simplified schematic of a ninth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 14 is a simplified schematic of a tenth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIGS. 15, 16 and 17 illustrate of how V₁ can be fed from V₂ in the embodiments of a temperature-adaptive gate driver shown in
FIG. 16, resistor R₃₁ 1631 and resistor R₃₂ 1632 form a resistor divider. The common point of this resistor divider is connected to the gate of an e-mode GaN …
FIG. 17, an e-mode GaN device 1730 is connected in a diode-like fashion, i.e., gate connected to drain, with a positive side on voltage rail V₂ and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A temperature-adaptive gate driver for a GaN switch, comprising: a GaN switch disposed on a GaN substrate; a driver disposed on another substrate for outputting an on-state gate-to-source voltage to a gate terminal of the GaN switch; a gate-to-source voltage adjustment unit, disposed on the other substrate, for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes a temperature sense element for sensing tem-perature of the GaN switch; and wherein the on-state gate-to-source voltage is adjustable based, in part, on the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the temperature sense element is located near the GaN switch so that a temperature of the temperature sense element reflects the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit includes a resistor network coupled to the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the output signal outputted by the gate-to-source voltage adjustment unit to the driver is responsive to a temperature of the temperature sense ele-ment.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the on-state gate-to-source voltage of the GaN switch rises with a rise in temperature of the GaN switch in a pre-determined fashion.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit changes the on-state gate-to-source voltage according to a pre-determined scheme in response to the output signal of the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a silicon-based driver having a first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a GaN-based driver having first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, an output terminal for outputting a lower voltage to the gate-to-source voltage adjustment unit, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the other substrate is a silicon substrate.
A circuit, comprising: a GaN substrate; a GaN switch disposed on the GaN substrate, the GaN switch including a gate terminal; a driver disposed on another substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal; and a GaN gate-to-source voltage adjustment unit disposed on the other substrate, the GaN gate-to-source voltage adjustment unit for outputting an output signal to the GaN driver, wherein GaN gate-to-source voltage adjustment unit includes a temperature sense element for sensing temperature of the GaN switch, wherein the on-state gate-to-source voltage is based, in part, on the temperature of the GaN switch.
The circuit of claim 15, wherein the temperature sense element comprises an E-mode GaN device coupled to a resistor network.
The circuit of claim 15, wherein the other substrate is another GaN substrate.
A microelectronic package, comprising: a first GaN substrate in the microelectronic package; a GaN switch disposed on the first GaN substrate, the GaN switch including a gate terminal; a second substrate in the microelectronic package; a driver disposed on the second substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal, wherein the on-state gate-to-source voltage is based, in part, on temperature of the GaN switch; and a gate-to-source voltage adjustment unit disposed on the second substrate, the gate-to-source voltage adjustment unit for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes: a temperature sense element for sensing temperature of the GaN switch, a resistor network coupled to the temperature sense ele-ment, and 15 16 a regulator for receiving a feedback signal from the resistor network, the feedback signal based in part, on resistance of the temperature sense element, and for causing a value of the output signal to be responsive to a value of the feedback signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
temperature-adaptive gate driver for GaN switch
circuit with GaN switch and GaN gate-to-source voltage adjustment unit
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN HEMT threshold voltage range due to process variations | 0.5–2.2 | GaN |
typical VGS(on) for e-mode GaN device | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,476,632 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
FIG. 5 is a simplified schematic of a first embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 6 is a simplified schematic of a second embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 7 is a simplified schematic of a third embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 8 is a simplified schematic of a fourth embodiment of temperature-adaptive gate driver in accordance with the invention.
FIG. 9 is a simplified schematic of a fifth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 10 is a simplified schematic of a sixth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 11 is a simplified schematic of a seventh embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 12 is a simplified schematic of an eighth embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 13 is a simplified schematic of a ninth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 14 is a simplified schematic of a tenth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIGS. 15, 16 and 17 illustrate of how V₁ can be fed from V₂ in the embodiments of a temperature-adaptive gate driver shown in
FIG. 16, resistor R₃₁ 1631 and resistor R₃₂ 1632 form a resistor divider. The common point of this resistor divider is connected to the gate of an e-mode GaN …
FIG. 17, an e-mode GaN device 1730 is connected in a diode-like fashion, i.e., gate connected to drain, with a positive side on voltage rail V₂ and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A temperature-adaptive gate driver for a GaN switch, comprising: a GaN switch disposed on a GaN substrate; a driver disposed on another substrate for outputting an on-state gate-to-source voltage to a gate terminal of the GaN switch; a gate-to-source voltage adjustment unit, disposed on the other substrate, for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes a temperature sense element for sensing tem-perature of the GaN switch; and wherein the on-state gate-to-source voltage is adjustable based, in part, on the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the temperature sense element is located near the GaN switch so that a temperature of the temperature sense element reflects the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit includes a resistor network coupled to the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the output signal outputted by the gate-to-source voltage adjustment unit to the driver is responsive to a temperature of the temperature sense ele-ment.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the on-state gate-to-source voltage of the GaN switch rises with a rise in temperature of the GaN switch in a pre-determined fashion.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit changes the on-state gate-to-source voltage according to a pre-determined scheme in response to the output signal of the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a silicon-based driver having a first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a GaN-based driver having first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, an output terminal for outputting a lower voltage to the gate-to-source voltage adjustment unit, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the other substrate is a silicon substrate.
A circuit, comprising: a GaN substrate; a GaN switch disposed on the GaN substrate, the GaN switch including a gate terminal; a driver disposed on another substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal; and a GaN gate-to-source voltage adjustment unit disposed on the other substrate, the GaN gate-to-source voltage adjustment unit for outputting an output signal to the GaN driver, wherein GaN gate-to-source voltage adjustment unit includes a temperature sense element for sensing temperature of the GaN switch, wherein the on-state gate-to-source voltage is based, in part, on the temperature of the GaN switch.
The circuit of claim 15, wherein the temperature sense element comprises an E-mode GaN device coupled to a resistor network.
The circuit of claim 15, wherein the other substrate is another GaN substrate.
A microelectronic package, comprising: a first GaN substrate in the microelectronic package; a GaN switch disposed on the first GaN substrate, the GaN switch including a gate terminal; a second substrate in the microelectronic package; a driver disposed on the second substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal, wherein the on-state gate-to-source voltage is based, in part, on temperature of the GaN switch; and a gate-to-source voltage adjustment unit disposed on the second substrate, the gate-to-source voltage adjustment unit for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes: a temperature sense element for sensing temperature of the GaN switch, a resistor network coupled to the temperature sense ele-ment, and 15 16 a regulator for receiving a feedback signal from the resistor network, the feedback signal based in part, on resistance of the temperature sense element, and for causing a value of the output signal to be responsive to a value of the feedback signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
temperature-adaptive gate driver for GaN switch
circuit with GaN switch and GaN gate-to-source voltage adjustment unit
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN HEMT threshold voltage range due to process variations | 0.5–2.2 | GaN |
typical VGS(on) for e-mode GaN device | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,476,632 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
FIG. 5 is a simplified schematic of a first embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 6 is a simplified schematic of a second embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 7 is a simplified schematic of a third embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 8 is a simplified schematic of a fourth embodiment of temperature-adaptive gate driver in accordance with the invention.
FIG. 9 is a simplified schematic of a fifth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 10 is a simplified schematic of a sixth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 11 is a simplified schematic of a seventh embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 12 is a simplified schematic of an eighth embodi- ment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 13 is a simplified schematic of a ninth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIG. 14 is a simplified schematic of a tenth embodiment of a temperature-adaptive gate driver in accordance with the invention.
FIGS. 15, 16 and 17 illustrate of how V₁ can be fed from V₂ in the embodiments of a temperature-adaptive gate driver shown in
FIG. 16, resistor R₃₁ 1631 and resistor R₃₂ 1632 form a resistor divider. The common point of this resistor divider is connected to the gate of an e-mode GaN …
FIG. 17, an e-mode GaN device 1730 is connected in a diode-like fashion, i.e., gate connected to drain, with a positive side on voltage rail V₂ and the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A temperature-adaptive gate driver for a GaN switch, comprising: a GaN switch disposed on a GaN substrate; a driver disposed on another substrate for outputting an on-state gate-to-source voltage to a gate terminal of the GaN switch; a gate-to-source voltage adjustment unit, disposed on the other substrate, for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes a temperature sense element for sensing tem-perature of the GaN switch; and wherein the on-state gate-to-source voltage is adjustable based, in part, on the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the temperature sense element is located near the GaN switch so that a temperature of the temperature sense element reflects the temperature of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit includes a resistor network coupled to the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the output signal outputted by the gate-to-source voltage adjustment unit to the driver is responsive to a temperature of the temperature sense ele-ment.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the on-state gate-to-source voltage of the GaN switch rises with a rise in temperature of the GaN switch in a pre-determined fashion.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the gate-to-source voltage adjustment unit changes the on-state gate-to-source voltage according to a pre-determined scheme in response to the output signal of the temperature sense element.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a silicon-based driver having a first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the driver is a GaN-based driver having first terminal for receiving a pulse width modulated signal, a second terminal for receiving the output signal from the gate-to-source voltage adjustment unit, a third terminal coupled to ground, an output terminal for outputting a lower voltage to the gate-to-source voltage adjustment unit, and an output terminal coupled to the gate terminal of the GaN switch.
The temperature-adaptive gate driver for a GaN switch of claim 1, wherein the other substrate is a silicon substrate.
A circuit, comprising: a GaN substrate; a GaN switch disposed on the GaN substrate, the GaN switch including a gate terminal; a driver disposed on another substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal; and a GaN gate-to-source voltage adjustment unit disposed on the other substrate, the GaN gate-to-source voltage adjustment unit for outputting an output signal to the GaN driver, wherein GaN gate-to-source voltage adjustment unit includes a temperature sense element for sensing temperature of the GaN switch, wherein the on-state gate-to-source voltage is based, in part, on the temperature of the GaN switch.
The circuit of claim 15, wherein the temperature sense element comprises an E-mode GaN device coupled to a resistor network.
The circuit of claim 15, wherein the other substrate is another GaN substrate.
A microelectronic package, comprising: a first GaN substrate in the microelectronic package; a GaN switch disposed on the first GaN substrate, the GaN switch including a gate terminal; a second substrate in the microelectronic package; a driver disposed on the second substrate, the driver for outputting an on-state gate-to-source voltage to the gate terminal, wherein the on-state gate-to-source voltage is based, in part, on temperature of the GaN switch; and a gate-to-source voltage adjustment unit disposed on the second substrate, the gate-to-source voltage adjustment unit for outputting an output signal to the driver, wherein the gate-to-source voltage adjustment unit includes: a temperature sense element for sensing temperature of the GaN switch, a resistor network coupled to the temperature sense ele-ment, and 15 16 a regulator for receiving a feedback signal from the resistor network, the feedback signal based in part, on resistance of the temperature sense element, and for causing a value of the output signal to be responsive to a value of the feedback signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
temperature-adaptive gate driver for GaN switch
circuit with GaN switch and GaN gate-to-source voltage adjustment unit
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN HEMT threshold voltage range due to process variations | 0.5–2.2 | GaN |
typical VGS(on) for e-mode GaN device | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
microelectronic package with GaN switch and gate-to-source voltage adjustment unit
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
typical VGS(off) for e-mode GaN device | — | GaN |
Voltage | 6–6.8 V | — |
Temperature | 25–125 °C | — |
Temperature | 100–130 °C | — |
Cited non-patent literature · 1
microelectronic package with GaN switch and gate-to-source voltage adjustment unit
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
typical VGS(off) for e-mode GaN device | — | GaN |
Voltage | 6–6.8 V | — |
Temperature | 25–125 °C | — |
Temperature | 100–130 °C | — |
Cited non-patent literature · 1
microelectronic package with GaN switch and gate-to-source voltage adjustment unit
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
typical VGS(off) for e-mode GaN device | — | GaN |
Voltage | 6–6.8 V | — |
Temperature | 25–125 °C | — |
Temperature | 100–130 °C | — |
Cited non-patent literature · 1
microelectronic package with GaN switch and gate-to-source voltage adjustment unit
FIG. 1 is a graph of RDS(on) variation with the drain current for various values of VGS(on).
FIG. 2 is a graph of HTGB lifetime as a function of VGS(on) at 25° C.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 3 is a graph of RDS(on) variation with the drain current for various values of VGS(on) at two different tem- peratures.
FIG. 4 is a graph of HTGB lifetime as a function of VGS(on) at three different values of temperature.
typical VGS(off) for e-mode GaN device | — | GaN |
Voltage | 6–6.8 V | — |
Temperature | 25–125 °C | — |
Temperature | 100–130 °C | — |
Cited non-patent literature · 1