Patent
US 7,994,540GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH THE SAME
Walter H. Nagy
US
Copyright © 2026 Matter42. All rights reserved.
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US 7,994,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 5). One suitable way of measuring ACPR is using WCDMA Test Model 1 of 3G spec TS 25.141, which calls for a single carrier with 64 users and 100% clipping …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplify the input signal to form the output signal, wherein the device has a gain of greater than 5 dB and wherein the output signal, when transmitted, has an adjacent channel power ratio (ACPR) that varies by less than 10% over a range of 3 dB of output power.
The device of claim 1, wherein the device has a gain of greater than 12 dB.
The device of claim 1, wherein the at least one transistor structure includes a source electrode, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 1, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 1, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 1, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 1, wherein the input signal is a radio frequency (R F) signal and the at least one transistor operates as a class AB amplifier.
The device of claim 1, wherein the device has an input impedance between 1 and 50 Ohms.
The device of clai m 1, wherein the device has an efficiency of greater than 20%.
Attomey Docket No.: 0400638CCC Claim 11: A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplif y the input signal to for m the output signal, wherein the device has an efficiency of greater than 20% when operated at a power density of greater than or equal to 0.1 W/m n.
The device of claim 11, wherein the device has a gain of greater than 5 dB when operated at a power density of greater than or equal to 0.1 W/mm.
The device of claim 11, wherein the at least one transistor structure includes a source electrod e, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 11, wherein the gate electrode receives the input signal and the amplified signal is provided at the drain electrode.
A ttorney Docket No.: 0400638 CCC Claim 15: The device of claim 11, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 11, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 11, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 11, wherein the device has an output impedance between 1 and 50 Ohms.
The device of claim 11, wherein the device has an input impedance between I and 50 Ohms.
The device of claim. 1 1, wherein the input signal is a radio frequency (RF) signal and the at least one transistor operates as a class AB amplifier.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride material transistor amplifier
Materials described outside the worked examples.
gallium nitride material
GaN
silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,994,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 5). One suitable way of measuring ACPR is using WCDMA Test Model 1 of 3G spec TS 25.141, which calls for a single carrier with 64 users and 100% clipping …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplify the input signal to form the output signal, wherein the device has a gain of greater than 5 dB and wherein the output signal, when transmitted, has an adjacent channel power ratio (ACPR) that varies by less than 10% over a range of 3 dB of output power.
The device of claim 1, wherein the device has a gain of greater than 12 dB.
The device of claim 1, wherein the at least one transistor structure includes a source electrode, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 1, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 1, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 1, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 1, wherein the input signal is a radio frequency (R F) signal and the at least one transistor operates as a class AB amplifier.
The device of claim 1, wherein the device has an input impedance between 1 and 50 Ohms.
The device of clai m 1, wherein the device has an efficiency of greater than 20%.
Attomey Docket No.: 0400638CCC Claim 11: A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplif y the input signal to for m the output signal, wherein the device has an efficiency of greater than 20% when operated at a power density of greater than or equal to 0.1 W/m n.
The device of claim 11, wherein the device has a gain of greater than 5 dB when operated at a power density of greater than or equal to 0.1 W/mm.
The device of claim 11, wherein the at least one transistor structure includes a source electrod e, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 11, wherein the gate electrode receives the input signal and the amplified signal is provided at the drain electrode.
A ttorney Docket No.: 0400638 CCC Claim 15: The device of claim 11, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 11, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 11, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 11, wherein the device has an output impedance between 1 and 50 Ohms.
The device of claim 11, wherein the device has an input impedance between I and 50 Ohms.
The device of claim. 1 1, wherein the input signal is a radio frequency (RF) signal and the at least one transistor operates as a class AB amplifier.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride material transistor amplifier
Materials described outside the worked examples.
gallium nitride material
GaN
silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,994,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 5). One suitable way of measuring ACPR is using WCDMA Test Model 1 of 3G spec TS 25.141, which calls for a single carrier with 64 users and 100% clipping …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplify the input signal to form the output signal, wherein the device has a gain of greater than 5 dB and wherein the output signal, when transmitted, has an adjacent channel power ratio (ACPR) that varies by less than 10% over a range of 3 dB of output power.
The device of claim 1, wherein the device has a gain of greater than 12 dB.
The device of claim 1, wherein the at least one transistor structure includes a source electrode, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 1, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 1, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 1, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 1, wherein the input signal is a radio frequency (R F) signal and the at least one transistor operates as a class AB amplifier.
The device of claim 1, wherein the device has an input impedance between 1 and 50 Ohms.
The device of clai m 1, wherein the device has an efficiency of greater than 20%.
Attomey Docket No.: 0400638CCC Claim 11: A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplif y the input signal to for m the output signal, wherein the device has an efficiency of greater than 20% when operated at a power density of greater than or equal to 0.1 W/m n.
The device of claim 11, wherein the device has a gain of greater than 5 dB when operated at a power density of greater than or equal to 0.1 W/mm.
The device of claim 11, wherein the at least one transistor structure includes a source electrod e, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 11, wherein the gate electrode receives the input signal and the amplified signal is provided at the drain electrode.
A ttorney Docket No.: 0400638 CCC Claim 15: The device of claim 11, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 11, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 11, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 11, wherein the device has an output impedance between 1 and 50 Ohms.
The device of claim 11, wherein the device has an input impedance between I and 50 Ohms.
The device of claim. 1 1, wherein the input signal is a radio frequency (RF) signal and the at least one transistor operates as a class AB amplifier.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride material transistor amplifier
Materials described outside the worked examples.
gallium nitride material
GaN
silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,994,540Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 5). One suitable way of measuring ACPR is using WCDMA Test Model 1 of 3G spec TS 25.141, which calls for a single carrier with 64 users and 100% clipping …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplify the input signal to form the output signal, wherein the device has a gain of greater than 5 dB and wherein the output signal, when transmitted, has an adjacent channel power ratio (ACPR) that varies by less than 10% over a range of 3 dB of output power.
The device of claim 1, wherein the device has a gain of greater than 12 dB.
The device of claim 1, wherein the at least one transistor structure includes a source electrode, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 1, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 1, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 1, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 1, wherein the input signal is a radio frequency (R F) signal and the at least one transistor operates as a class AB amplifier.
The device of claim 1, wherein the device has an input impedance between 1 and 50 Ohms.
The device of clai m 1, wherein the device has an efficiency of greater than 20%.
Attomey Docket No.: 0400638CCC Claim 11: A device adapted to receive an input signal and to transmit an output signal, the device comprising: at least one transistor structure to receive the input signal, the at least one transistor including at least one active region formed in a gallium nitride material region, the at least one transistor structure being adapted to amplif y the input signal to for m the output signal, wherein the device has an efficiency of greater than 20% when operated at a power density of greater than or equal to 0.1 W/m n.
The device of claim 11, wherein the device has a gain of greater than 5 dB when operated at a power density of greater than or equal to 0.1 W/mm.
The device of claim 11, wherein the at least one transistor structure includes a source electrod e, a gate electrode and a drain electrode associated with the at least one active region.
The device of claim 11, wherein the gate electrode receives the input signal and the amplified signal is provided at the drain electrode.
A ttorney Docket No.: 0400638 CCC Claim 15: The device of claim 11, wherein the input signal is a W- CDMA modulated signal and the output signal is transmitted in accordance with the W-CDMA standard.
The device of claim 11, wherein the at least one transistor structure comprises a plurality of transistor structures.
The device of claim 11, wherein the at least one transistor structure comprises a silicon substrate, wherein the gallium nitride material region is formed on the silicon substrate.
The device of claim 11, wherein the device has an output impedance between 1 and 50 Ohms.
The device of claim 11, wherein the device has an input impedance between I and 50 Ohms.
The device of claim. 1 1, wherein the input signal is a radio frequency (RF) signal and the at least one transistor operates as a class AB amplifier.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride material transistor amplifier
Materials described outside the worked examples.
gallium nitride material
GaN
silicon substrate
Si
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
Related documents with shared materials, methods, properties, or citations.
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …
FIG. 1A. The transistor was mounted to a package similar to the packaged transistor shown in
FIG. 2 is a plan view of a transistor unit cell 30 according to one embodiment of the invention. In this embodiment, the transistor unit cell includes ten …
FIG. 3 is a plan view of a power transistor 40 according to one embodiment of the invention. The power transistor includes multiple transistor unit cells 30 …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 4A. As described further below, other -6- components (e.g., matching network components) may also be attached to the package. Bond wires 54 may be used to …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 6C shows ACPR as a function of output power for the transistor operated under different bias conditions The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 7C shows ACPR as a function of output power for the transistor operated with different matching networks. 15 The results establish that transistors of the …
FIG. 8B shows efficiency and ACPR as a function of output power for a 10 transistor of the invention as described in Example 3. Detailed Description The …