Patent
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US 12,154,990 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross section of a chip of a rectifier prepared in an embodiment 1 of the present invention.
FIG. 2, with a full width half maximum of 0.09°. The forward J-V curve diagram of the epitaxial wafer is as shown in
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the GaN buffer layer is 650-900 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 2, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 35 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 60 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 65 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and B₂ performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, wherein a doping concentration of the carbon-doped semi-insulating GaN layer is 5.0×1018-6.0×1018 cm⁻³, and a thickness of the carbon-doped semi-insulating GaN layer is 80 to 180 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 4, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 30 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 55 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 60 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor B₂ deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiN passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the two-dimensional AlN layer is 2 to 4 atomic layers.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 6, wherein the thickness of the two-dimensional AlN layer is 2 atomic layers.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 6, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped GaN layer is 350 to 550 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped InGaN layer is 50 to 200 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein x in the SiNx passivation layer is equal to 1.29 to 1.51.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 14, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; 30 a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; 65 a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to B₂ remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on a silicon substrate according to claim 1, wherein a depth of the mesa isolation groove is 1.2 to 1.5 µm, and a thickness of the Schottky contact electrode is 220 to 250 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 16, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, comprising the following steps: a step (1); growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3); transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4); etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6); immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8); preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9); preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14); after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/two-dimensional AlN heterojunction rectifier on silicon substrate
Materials described outside the worked examples.
GaN buffer layer
GaN
two-dimensional AlN layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2DEG electron gas concentration in embodiment 1 | 100000000000000 cm⁻² | AlNGaN |
Electron mobility in embodiment 1 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Cited non-patent literature · 2
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Atlas literature
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US 12,154,990 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross section of a chip of a rectifier prepared in an embodiment 1 of the present invention.
FIG. 2, with a full width half maximum of 0.09°. The forward J-V curve diagram of the epitaxial wafer is as shown in
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the GaN buffer layer is 650-900 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 2, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 35 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 60 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 65 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and B₂ performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, wherein a doping concentration of the carbon-doped semi-insulating GaN layer is 5.0×1018-6.0×1018 cm⁻³, and a thickness of the carbon-doped semi-insulating GaN layer is 80 to 180 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 4, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 30 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 55 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 60 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor B₂ deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiN passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the two-dimensional AlN layer is 2 to 4 atomic layers.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 6, wherein the thickness of the two-dimensional AlN layer is 2 atomic layers.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 6, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped GaN layer is 350 to 550 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped InGaN layer is 50 to 200 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein x in the SiNx passivation layer is equal to 1.29 to 1.51.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 14, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; 30 a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; 65 a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to B₂ remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on a silicon substrate according to claim 1, wherein a depth of the mesa isolation groove is 1.2 to 1.5 µm, and a thickness of the Schottky contact electrode is 220 to 250 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 16, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, comprising the following steps: a step (1); growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3); transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4); etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6); immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8); preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9); preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14); after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/two-dimensional AlN heterojunction rectifier on silicon substrate
Materials described outside the worked examples.
GaN buffer layer
GaN
two-dimensional AlN layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2DEG electron gas concentration in embodiment 1 | 100000000000000 cm⁻² | AlNGaN |
Electron mobility in embodiment 1 |
Patents and literature cited by this patent (applicant and examiner references).
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US 12,154,990 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross section of a chip of a rectifier prepared in an embodiment 1 of the present invention.
FIG. 2, with a full width half maximum of 0.09°. The forward J-V curve diagram of the epitaxial wafer is as shown in
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the GaN buffer layer is 650-900 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 2, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 35 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 60 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 65 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and B₂ performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, wherein a doping concentration of the carbon-doped semi-insulating GaN layer is 5.0×1018-6.0×1018 cm⁻³, and a thickness of the carbon-doped semi-insulating GaN layer is 80 to 180 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 4, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 30 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 55 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 60 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor B₂ deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiN passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the two-dimensional AlN layer is 2 to 4 atomic layers.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 6, wherein the thickness of the two-dimensional AlN layer is 2 atomic layers.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 6, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped GaN layer is 350 to 550 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped InGaN layer is 50 to 200 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein x in the SiNx passivation layer is equal to 1.29 to 1.51.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 14, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; 30 a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; 65 a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to B₂ remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on a silicon substrate according to claim 1, wherein a depth of the mesa isolation groove is 1.2 to 1.5 µm, and a thickness of the Schottky contact electrode is 220 to 250 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 16, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, comprising the following steps: a step (1); growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3); transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4); etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6); immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8); preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9); preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14); after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/two-dimensional AlN heterojunction rectifier on silicon substrate
Materials described outside the worked examples.
GaN buffer layer
GaN
two-dimensional AlN layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2DEG electron gas concentration in embodiment 1 | 100000000000000 cm⁻² | AlNGaN |
Electron mobility in embodiment 1 |
Patents and literature cited by this patent (applicant and examiner references).
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US 12,154,990 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross section of a chip of a rectifier prepared in an embodiment 1 of the present invention.
FIG. 2, with a full width half maximum of 0.09°. The forward J-V curve diagram of the epitaxial wafer is as shown in
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the GaN buffer layer is 650-900 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 2, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 35 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 60 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 65 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and B₂ performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, wherein a doping concentration of the carbon-doped semi-insulating GaN layer is 5.0×1018-6.0×1018 cm⁻³, and a thickness of the carbon-doped semi-insulating GaN layer is 80 to 180 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 4, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; 30 a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; 55 a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; 60 a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor B₂ deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiN passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 1, wherein a thickness of the two-dimensional AlN layer is 2 to 4 atomic layers.
The GaN/two-dimensional AlN heterojunction rectifier on the silicon substrate according to claim 6, wherein the thickness of the two-dimensional AlN layer is 2 atomic layers.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 6, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped GaN layer is 350 to 550 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein a thickness of the non-doped InGaN layer is 50 to 200 nm.
The GaN/two-dimensional AlN heterojunction recti-fier on the silicon substrate according to claim 1, wherein x in the SiNx passivation layer is equal to 1.29 to 1.51.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 14, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; 30 a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; 65 a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to B₂ remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
The GaN/two-dimensional AlN heterojunction recti-fier on a silicon substrate according to claim 1, wherein a depth of the mesa isolation groove is 1.2 to 1.5 µm, and a thickness of the Schottky contact electrode is 220 to 250 nm.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 16, comprising the following steps: a step (1): growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3): transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4): etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6): immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8): preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9): preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14): after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate.
A method for preparing a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate according to claim 1, comprising the following steps: a step (1); growing a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer and a non-doped InGaN layer on a silicon substrate in sequence to obtain an epitaxial wafer of the rectifier; a step (2): putting the epitaxial wafer of the rectifier obtained in the step (1) in acetone and anhydrous ethanol in sequence for ultrasonic treatment, taking the epitaxial wafer of the rectifier out, cleaning the epi-taxial wafer of the rectifier with deionized water, and then blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (3); transferring a Schottky contact electrode pat-tern to the epitaxial wafer of the rectifier: evenly spin-coating a photoresist to the epitaxial wafer of the rectifier obtained in the step (2), then putting the epitaxial wafer of the rectifier in a lithography machine to be exposed, and finally cleaning the epitaxial wafer with a developing solution to reveal the pattern; a step (4); etching a groove along the Schottky contact electrode pattern in the epitaxial wafer of the rectifier by utilizing a reactive ion etching method to obtain an ohmic contact electrode; a step (5): preparing a Schottky contact electrode: putting the epitaxial wafer of the rectifier etched with the groove with the ohmic contact electrode pattern obtained in the step (4) in an electron beam evaporation apparatus, then vacuumizing a cavity, bombarding a metal target with an electronic gun so as to deposit a metal to a surface of the epitaxial wafer, and after evaporation, annealing the epitaxial wafer; a step (6); immersing the epitaxial wafer of the rectifier into a stripping liquid for photoresist and cleaning the epitaxial wafer of the rectifier with deionized water, then putting the epitaxial wafer of the rectifier in acetone for ultrasonic treatment, and blow-drying the epitaxial wafer of the rectifier with nitrogen; a step (7): aligning the epitaxial wafer of the rectifier with an alignment mark in a mask, repeating the step (3), performing lithography development in a correspond-ing position to prepare the ohmic contact electrode pattern and cleaning the pattern; a step (8); preparing an ohmic contact electrode: repeating the steps (5) and (6), depositing an electrode metal, and performing annealing and cleaning to complete prepa-ration of the ohmic contact electrode; a step (9); preparing a silicon nitride passivation layer: putting the epitaxial wafer of the rectifier obtained in the step (8) in a plasma enhanced chemical vapor deposition apparatus, then raising the temperature, per-forming vacuumizing and introducing a carrier gas and a reaction gas in sequence, and finally depositing the SiNx passivation layer on the surface of the epitaxial wafer; a step (10): repeating the step (3) to perform exposure and development at the ohmic contact electrode and the Schottky contact electrode so as to expose SiNx on the two electrodes; a step (11): etching the exposed SiNx by using a wet etching method, and finally repeating the step (6) to remove residual photoresist and SiNx passivation layer on the surface of the epitaxial wafer of the rectifier; a step (12): aligning by the alignment mark of the mask, and repeating the steps (3) and (4) so as to transfer a mesa isolation pattern to the surface of the epitaxial wafer and etch the groove in the surface; a step (13): putting the epitaxial wafer of the rectifier obtained in the step (12) in a plasma-assisted chemical vapor deposition apparatus, repeating the step (8), and depositing the SiNx passivation layer in the groove etched in the step (12); and a step (14); after repeating the step (11) to remove the residual photoresist on the surface of the epitaxial wafer, removing the residual photoresist and SiNx on the surface of the epitaxial wafer of the rectifier by means of immersion in the stripping liquid for photoresist and ultrasonic cleaning so as to complete prepa-ration of the GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/two-dimensional AlN heterojunction rectifier on silicon substrate
Materials described outside the worked examples.
GaN buffer layer
GaN
two-dimensional AlN layer
AlN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2DEG electron gas concentration in embodiment 1 | 100000000000000 cm⁻² | AlNGaN |
Electron mobility in embodiment 1 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
carbon-doped semi-insulating GaN layer
GaN:C
non-doped InGaN layer
InGaN
SiNx passivation layer
SiNx
silicon substrate
Si
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
| 3000 cm2/Vs |
AlNGaN |
Full width half maximum of GaN (0002) x-ray rocking curve in embodiment 1 | 0.09 deg | GaN |
Threshold voltage in embodiment 1 | 0.75 V | — |
Specific on-resistance RON in embodiment 1 | 8.8 mΩ/sq | — |
Reverse leak current in embodiment 1 at -20V bias | -0.0003 A | — |
Thickness | 80–180 nm | — |
Thickness | 350–550 nm | — |
Thickness | 50–200 nm | — |
Thickness | 1.2–1.5 µm | — |
Thickness | 220–250 nm | — |
Thickness | 650–900 nm | — |
carbon-doped semi-insulating GaN layer
GaN:C
non-doped InGaN layer
InGaN
SiNx passivation layer
SiNx
silicon substrate
Si
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
| 3000 cm2/Vs |
AlNGaN |
Full width half maximum of GaN (0002) x-ray rocking curve in embodiment 1 | 0.09 deg | GaN |
Threshold voltage in embodiment 1 | 0.75 V | — |
Specific on-resistance RON in embodiment 1 | 8.8 mΩ/sq | — |
Reverse leak current in embodiment 1 at -20V bias | -0.0003 A | — |
Thickness | 80–180 nm | — |
Thickness | 350–550 nm | — |
Thickness | 50–200 nm | — |
Thickness | 1.2–1.5 µm | — |
Thickness | 220–250 nm | — |
Thickness | 650–900 nm | — |
carbon-doped semi-insulating GaN layer
GaN:C
non-doped InGaN layer
InGaN
SiNx passivation layer
SiNx
silicon substrate
Si
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
| 3000 cm2/Vs |
AlNGaN |
Full width half maximum of GaN (0002) x-ray rocking curve in embodiment 1 | 0.09 deg | GaN |
Threshold voltage in embodiment 1 | 0.75 V | — |
Specific on-resistance RON in embodiment 1 | 8.8 mΩ/sq | — |
Reverse leak current in embodiment 1 at -20V bias | -0.0003 A | — |
Thickness | 80–180 nm | — |
Thickness | 350–550 nm | — |
Thickness | 50–200 nm | — |
Thickness | 1.2–1.5 µm | — |
Thickness | 220–250 nm | — |
Thickness | 650–900 nm | — |
carbon-doped semi-insulating GaN layer
GaN:C
non-doped InGaN layer
InGaN
SiNx passivation layer
SiNx
silicon substrate
Si
FIG. 3, the threshold voltage is 0.75V, and the calculated specific on-resistance RON is 8.8 mΩ/sq. Therefore, under a condition that it works at high power, …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
FIG. 4 is a reverse I-V curve diagram of a rectifier of an embodiment 1 of the present invention. INVENTION EMBODIMENTS Embodiments of the Present Invention …
| 3000 cm2/Vs |
AlNGaN |
Full width half maximum of GaN (0002) x-ray rocking curve in embodiment 1 | 0.09 deg | GaN |
Threshold voltage in embodiment 1 | 0.75 V | — |
Specific on-resistance RON in embodiment 1 | 8.8 mΩ/sq | — |
Reverse leak current in embodiment 1 at -20V bias | -0.0003 A | — |
Thickness | 80–180 nm | — |
Thickness | 350–550 nm | — |
Thickness | 50–200 nm | — |
Thickness | 1.2–1.5 µm | — |
Thickness | 220–250 nm | — |
Thickness | 650–900 nm | — |
