Patent
Atlas literature
Patent
US 9,747,789Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 4 i llustrates portions of a parallel MR apparatus configured with an on-coil switched-mode amplifier 1 0015 1
Figure 5 illustrates a current-mode class-D amp lifi er topology for use in parallel MRI transmission involving on-coil switched-mode amp li fication [0016 1
Figure 6 illustrates a topology in which voltage and/or current-sources are additionally and/or alternatively digitally controllable. 5 10 017]
Figure 7 ill ustrates a topology in which current-sources are additionally and/or alternatively digitally controllable
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 9 ill ustrates a method associated with switched-mode current- source amplification. 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
Figure 11 illustrates a switched-mode current-source amplifier topology having a parallel resonance circuit portion 1
Figure 12 ill ustrates a method associated with switched-mode current- source amplification
Figure 13 illustrates an amp li fier topology for use in parallel MR transmission including VMCD pre-amplif i ers 1
Figure 14 ill ustrates an amplifier topology for use in parallel MR transmission including VMCD pre-amplifiers 1 0025 1
Figure 15 illustrates an amplifier topology for use in parallel MR transmission including feedback control. [0026 1
Figure 16 illustrates an amplifier topology for use in parallel MR transmission including VMCD amplifiers and feedback control. [0027 1
Figure 17 illustrates an amplifier topology for use in high field parallel MR transmission [0028 1
Figure 18 ill ustrates a first portion of an amplifier topology for use in high field parallel MR transmission [0029 1
Figure 19 i llustrates a second portion of an amplifier topology for use in high field parallel MR transmission 6
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 1, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 1, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 1, where one a member of the at least two FETs is one of less than 2mm 2 or less than.5mm2.
The on-coil switched-mode current-source amplifier of claim 1, where the amplifier is configured to be placed within one of 1 centimeter or 2 meters of a[[the]] bore of an MR apparatus. QB\155798.00090\41951955.1 2
The on-coil switched-mode current-source amplifier of claim 1, the coil being a multi-turn coil.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
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An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 3 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 32, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 32, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 32, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 32, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 32, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 4 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector.
The on-coil switched-mode current-source amplifier of claim 38, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 38, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 38, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 38, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 38, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 5 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 44, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 44, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 44, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 44, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 44, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 6 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 50, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 50, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 50, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 50, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 50, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 7 a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector, and where the efficiency of the class S amplifier is at least 90%.
The on-coil switched-mode current-source amplifier of claim 56, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 56, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 56, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 56, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 56, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier. QB\155798.00090\41951955.1 g
Layer stacks claimed or described, ordered top of device to substrate.
on-coil switched-mode current-source amplifier (class S supply, no current detector)
on-coil switched-mode current-source amplifier with current detector (class S supply)
Materials described outside the worked examples.
gallium nitride FET
GaN
silicon LDMOS FET
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain efficiency of GaN FETs driving 50 ohm load | ≥ 85 | GaN |
power added efficiency of GaN FETs driving 50 ohm load | ≥ 85 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 9,747,789Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 4 i llustrates portions of a parallel MR apparatus configured with an on-coil switched-mode amplifier 1 0015 1
Figure 5 illustrates a current-mode class-D amp lifi er topology for use in parallel MRI transmission involving on-coil switched-mode amp li fication [0016 1
Figure 6 illustrates a topology in which voltage and/or current-sources are additionally and/or alternatively digitally controllable. 5 10 017]
Figure 7 ill ustrates a topology in which current-sources are additionally and/or alternatively digitally controllable
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 9 ill ustrates a method associated with switched-mode current- source amplification. 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
Figure 11 illustrates a switched-mode current-source amplifier topology having a parallel resonance circuit portion 1
Figure 12 ill ustrates a method associated with switched-mode current- source amplification
Figure 13 illustrates an amp li fier topology for use in parallel MR transmission including VMCD pre-amplif i ers 1
Figure 14 ill ustrates an amplifier topology for use in parallel MR transmission including VMCD pre-amplifiers 1 0025 1
Figure 15 illustrates an amplifier topology for use in parallel MR transmission including feedback control. [0026 1
Figure 16 illustrates an amplifier topology for use in parallel MR transmission including VMCD amplifiers and feedback control. [0027 1
Figure 17 illustrates an amplifier topology for use in high field parallel MR transmission [0028 1
Figure 18 ill ustrates a first portion of an amplifier topology for use in high field parallel MR transmission [0029 1
Figure 19 i llustrates a second portion of an amplifier topology for use in high field parallel MR transmission 6
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 1, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 1, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 1, where one a member of the at least two FETs is one of less than 2mm 2 or less than.5mm2.
The on-coil switched-mode current-source amplifier of claim 1, where the amplifier is configured to be placed within one of 1 centimeter or 2 meters of a[[the]] bore of an MR apparatus. QB\155798.00090\41951955.1 2
The on-coil switched-mode current-source amplifier of claim 1, the coil being a multi-turn coil.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
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An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 3 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 32, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 32, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 32, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 32, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 32, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 4 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector.
The on-coil switched-mode current-source amplifier of claim 38, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 38, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 38, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 38, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 38, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 5 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 44, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 44, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 44, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 44, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 44, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 6 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 50, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 50, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 50, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 50, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 50, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 7 a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector, and where the efficiency of the class S amplifier is at least 90%.
The on-coil switched-mode current-source amplifier of claim 56, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 56, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 56, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 56, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 56, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier. QB\155798.00090\41951955.1 g
Layer stacks claimed or described, ordered top of device to substrate.
on-coil switched-mode current-source amplifier (class S supply, no current detector)
on-coil switched-mode current-source amplifier with current detector (class S supply)
Materials described outside the worked examples.
gallium nitride FET
GaN
silicon LDMOS FET
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain efficiency of GaN FETs driving 50 ohm load | ≥ 85 | GaN |
power added efficiency of GaN FETs driving 50 ohm load | ≥ 85 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,747,789Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 4 i llustrates portions of a parallel MR apparatus configured with an on-coil switched-mode amplifier 1 0015 1
Figure 5 illustrates a current-mode class-D amp lifi er topology for use in parallel MRI transmission involving on-coil switched-mode amp li fication [0016 1
Figure 6 illustrates a topology in which voltage and/or current-sources are additionally and/or alternatively digitally controllable. 5 10 017]
Figure 7 ill ustrates a topology in which current-sources are additionally and/or alternatively digitally controllable
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 9 ill ustrates a method associated with switched-mode current- source amplification. 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
Figure 11 illustrates a switched-mode current-source amplifier topology having a parallel resonance circuit portion 1
Figure 12 ill ustrates a method associated with switched-mode current- source amplification
Figure 13 illustrates an amp li fier topology for use in parallel MR transmission including VMCD pre-amplif i ers 1
Figure 14 ill ustrates an amplifier topology for use in parallel MR transmission including VMCD pre-amplifiers 1 0025 1
Figure 15 illustrates an amplifier topology for use in parallel MR transmission including feedback control. [0026 1
Figure 16 illustrates an amplifier topology for use in parallel MR transmission including VMCD amplifiers and feedback control. [0027 1
Figure 17 illustrates an amplifier topology for use in high field parallel MR transmission [0028 1
Figure 18 ill ustrates a first portion of an amplifier topology for use in high field parallel MR transmission [0029 1
Figure 19 i llustrates a second portion of an amplifier topology for use in high field parallel MR transmission 6
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 1, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 1, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 1, where one a member of the at least two FETs is one of less than 2mm 2 or less than.5mm2.
The on-coil switched-mode current-source amplifier of claim 1, where the amplifier is configured to be placed within one of 1 centimeter or 2 meters of a[[the]] bore of an MR apparatus. QB\155798.00090\41951955.1 2
The on-coil switched-mode current-source amplifier of claim 1, the coil being a multi-turn coil.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
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An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 3 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 32, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 32, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 32, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 32, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 32, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 4 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector.
The on-coil switched-mode current-source amplifier of claim 38, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 38, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 38, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 38, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 38, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 5 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 44, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 44, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 44, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 44, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 44, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 6 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 50, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 50, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 50, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 50, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 50, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 7 a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector, and where the efficiency of the class S amplifier is at least 90%.
The on-coil switched-mode current-source amplifier of claim 56, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 56, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 56, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 56, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 56, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier. QB\155798.00090\41951955.1 g
Layer stacks claimed or described, ordered top of device to substrate.
on-coil switched-mode current-source amplifier (class S supply, no current detector)
on-coil switched-mode current-source amplifier with current detector (class S supply)
Materials described outside the worked examples.
gallium nitride FET
GaN
silicon LDMOS FET
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain efficiency of GaN FETs driving 50 ohm load | ≥ 85 | GaN |
power added efficiency of GaN FETs driving 50 ohm load | ≥ 85 |
Related documents with shared materials, methods, properties, or citations.
Patent
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US 9,747,789Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 4 i llustrates portions of a parallel MR apparatus configured with an on-coil switched-mode amplifier 1 0015 1
Figure 5 illustrates a current-mode class-D amp lifi er topology for use in parallel MRI transmission involving on-coil switched-mode amp li fication [0016 1
Figure 6 illustrates a topology in which voltage and/or current-sources are additionally and/or alternatively digitally controllable. 5 10 017]
Figure 7 ill ustrates a topology in which current-sources are additionally and/or alternatively digitally controllable
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 9 ill ustrates a method associated with switched-mode current- source amplification. 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
Figure 11 illustrates a switched-mode current-source amplifier topology having a parallel resonance circuit portion 1
Figure 12 ill ustrates a method associated with switched-mode current- source amplification
Figure 13 illustrates an amp li fier topology for use in parallel MR transmission including VMCD pre-amplif i ers 1
Figure 14 ill ustrates an amplifier topology for use in parallel MR transmission including VMCD pre-amplifiers 1 0025 1
Figure 15 illustrates an amplifier topology for use in parallel MR transmission including feedback control. [0026 1
Figure 16 illustrates an amplifier topology for use in parallel MR transmission including VMCD amplifiers and feedback control. [0027 1
Figure 17 illustrates an amplifier topology for use in high field parallel MR transmission [0028 1
Figure 18 ill ustrates a first portion of an amplifier topology for use in high field parallel MR transmission [0029 1
Figure 19 i llustrates a second portion of an amplifier topology for use in high field parallel MR transmission 6
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 1, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 1, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 1, where one a member of the at least two FETs is one of less than 2mm 2 or less than.5mm2.
The on-coil switched-mode current-source amplifier of claim 1, where the amplifier is configured to be placed within one of 1 centimeter or 2 meters of a[[the]] bore of an MR apparatus. QB\155798.00090\41951955.1 2
The on-coil switched-mode current-source amplifier of claim 1, the coil being a multi-turn coil.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, where a[[the]] power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 1, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
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An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an LC (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 3 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, and where the output analog RF signal depends, at least in part, on a current output by the at least two FETs.
The on-coil switched-mode current-source amplifier of claim 32, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 32, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 32, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 32, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 32, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, QB\155798.00090\41951955.1 4 a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector.
The on-coil switched-mode current-source amplifier of claim 38, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 38, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 38, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 38, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 38, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 5 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a drain efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 44, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 44, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 44, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 44, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 44, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 6 where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, and where a power added efficiency of the at least two FETs is at least 85% when driving a 50 ohm load.
The on-coil switched-mode current-source amplifier of claim 50, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 50, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 50, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 50, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 50, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier.
An on-coil switched-mode current-source amplifier for parallel transmission in magnetic resonance (MR), comprising: at least two field effect transistors (FETs) connected by a coil including an L C (inductance-capacitance) leg, the at least two FETs being gallium nitride (GaN) FETs, QB\155798.00090\41951955.1 7 a class S amplifier configured to provide a source voltage to the at least two FETs, where the coil is configured to produce an output analog radio frequency (RF) signal associated with parallel magnetic resonance imaging (MRI) transmission, a current detector that detects the current output by the coil as controlled, at least in part, by the at least two FETs, where the output analog RF signal depends, at least in part, on a current output by the at least two FETs, where the class S amplifier controls the source voltage provided to the at least two FETs as a function of the current detected by the current detector, and where the efficiency of the class S amplifier is at least 90%.
The on-coil switched-mode current-source amplifier of claim 56, the at least two FETs being enhanced mode gallium nitride (eGaN) FETs.
The on-coil switched-mode current-source amplifier of claim 56, where the at least two FETs drive a current in the coil of one of at least 3A rms or at least 5A rms.
The on-coil switched-mode current-source amplifier of claim 56, where one of the at least two FETs is one of less than 2mm 2 or less than.5mm 2.
The on-coil switched-mode current-source amplifier of claim 56, where the amplifier is configured to be within one of 1 centimeter or 2 meters of a bore of an MR apparatus.
The on-coil switched-mode current-source amplifier of claim 56, comprising: an envelope elimination and restoration circuit configured to replicate shaped RF pulses produced by an MR scanner, the envelope elimination and restoration circuit connected to the on-coil switched-mode current-source amplifier. QB\155798.00090\41951955.1 g
Layer stacks claimed or described, ordered top of device to substrate.
on-coil switched-mode current-source amplifier (class S supply, no current detector)
on-coil switched-mode current-source amplifier with current detector (class S supply)
Materials described outside the worked examples.
gallium nitride FET
GaN
silicon LDMOS FET
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 illustrates a portion of an MR apparatus that includes an MR transmit co i l controlled, at least in part, by a switched-mode current-source amplifier having enhanced mode gallium nit ri de (eGaN) FETs. [0012 1
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
drain efficiency of GaN FETs driving 50 ohm load | ≥ 85 | GaN |
power added efficiency of GaN FETs driving 50 ohm load | ≥ 85 |
Related documents with shared materials, methods, properties, or citations.
on-coil switched-mode current-source amplifier with current-feedback class S supply
on-coil switched-mode current-source amplifier (drain efficiency >= 85%)
on-coil switched-mode current-source amplifier (power added efficiency >= 85%)
on-coil switched-mode current-source amplifier with current-feedback class S supply (class S efficiency >= 90%)
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
class S amplifier efficiency | ≥ 90 | — |
eGaN FET die area (description embodiment) | 2 | GaN |
Voltage | 1–50 V | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
on-coil switched-mode current-source amplifier with current-feedback class S supply
on-coil switched-mode current-source amplifier (drain efficiency >= 85%)
on-coil switched-mode current-source amplifier (power added efficiency >= 85%)
on-coil switched-mode current-source amplifier with current-feedback class S supply (class S efficiency >= 90%)
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
class S amplifier efficiency | ≥ 90 | — |
eGaN FET die area (description embodiment) | 2 | GaN |
Voltage | 1–50 V | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
on-coil switched-mode current-source amplifier with current-feedback class S supply
on-coil switched-mode current-source amplifier (drain efficiency >= 85%)
on-coil switched-mode current-source amplifier (power added efficiency >= 85%)
on-coil switched-mode current-source amplifier with current-feedback class S supply (class S efficiency >= 90%)
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
class S amplifier efficiency | ≥ 90 | — |
eGaN FET die area (description embodiment) | 2 | GaN |
Voltage | 1–50 V | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
on-coil switched-mode current-source amplifier with current-feedback class S supply
on-coil switched-mode current-source amplifier (drain efficiency >= 85%)
on-coil switched-mode current-source amplifier (power added efficiency >= 85%)
on-coil switched-mode current-source amplifier with current-feedback class S supply (class S efficiency >= 90%)
Figure 2 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplif i er having gallium nit ri de FETs [0013 1
Figure 3 illustrates a portion of an MR apparatus that includes an MR transmit coil controlled, at least in part, by a switched-mode current-source amplifier having gal li um nitride FETs. [0014 1
Figure 8 illustrates a topology in which an additional eGaN FET has been added. [0019 1
Figure 10 illustrates an MRI apparatus configured with an on-coil switched-mode current-source amp lifi er having eGaN FETs. 10 021]
class S amplifier efficiency | ≥ 90 | — |
eGaN FET die area (description embodiment) | 2 | GaN |
Voltage | 1–50 V | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 5 mm | — |
