Patent
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Patent
US 12,027,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Compared with the semiconductor device 100 of
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 4. The semiconductor device 200' of
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
FIG. 10 4;
FIG. 15 6; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: 15 a first semiconductor layer composed of a III-nitride semiconductor material; a second semiconductor layer arranged on the first semiconductor layer and composed of a III-nitride semicon-ductor material; 20 a power transistor structure comprising a gate structure a drain structure and a source structure arranged on the second semiconductor layer; one or more first transistor structures (M1... M₄) arranged on the second semiconductor layer; and one or more second transistor structures (M5... Mn) arranged on the second semiconductor layer in series, wherein one end of the one or more first transistor structures (M1... M₄) and one end of the one or more second transistor structures (M5... Mn) are jointly electrically connected to the drain structure of the power transistor structure, and the other end of the one or more first transistor structures (M1... M₄) and the other end of the one or more second transistor struc-tures (M5... Mn) are jointly electrically connected to the source structure of the power transistor structure; wherein the one or more first transistor structures (M1... M₄) are used as a switching circuit, the one or more second transistor structures (M5... Mn) are used as a voltage detection circuit, the switching circuit and the voltage detection circuit together are used as a clamping circuit being connected in parallel with the power transistor structure and being connected between the drain structure and the source structure of the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more second transistor structures (M5... Mn) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a resistor structure, arranged on the second semiconductor layer and close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a passivation layer, arranged on the second semiconductor layer.
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more first transistor structures (M1... M₄), and the source structure of the power transistor structure is electrically connected to a source of the one or more first transistor structures (M1... M₄).
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more second transistor structures (M5... Mn), and the source structure of the power transistor structure is electrically connected to a source of the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, wherein the switching circuit is turned on when a voltage across the drain structure and the source structure of the power transistor structure is greater than a threshold, and the voltage detection circuit is used to drive the switching circuit to be turned on when the voltage detection circuit detects that the voltage across the drain structure and the source structure of the power transistor structure is greater than the threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor device with integrated clamping circuit
Materials described outside the worked examples.
III-nitride semiconductor material (first semiconductor layer)
III-nitride semiconductor material (second semiconductor layer)
Measurements and analyses referenced in the patent, with their drawing references.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,027,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Compared with the semiconductor device 100 of
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 4. The semiconductor device 200' of
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
FIG. 10 4;
FIG. 15 6; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: 15 a first semiconductor layer composed of a III-nitride semiconductor material; a second semiconductor layer arranged on the first semiconductor layer and composed of a III-nitride semicon-ductor material; 20 a power transistor structure comprising a gate structure a drain structure and a source structure arranged on the second semiconductor layer; one or more first transistor structures (M1... M₄) arranged on the second semiconductor layer; and one or more second transistor structures (M5... Mn) arranged on the second semiconductor layer in series, wherein one end of the one or more first transistor structures (M1... M₄) and one end of the one or more second transistor structures (M5... Mn) are jointly electrically connected to the drain structure of the power transistor structure, and the other end of the one or more first transistor structures (M1... M₄) and the other end of the one or more second transistor struc-tures (M5... Mn) are jointly electrically connected to the source structure of the power transistor structure; wherein the one or more first transistor structures (M1... M₄) are used as a switching circuit, the one or more second transistor structures (M5... Mn) are used as a voltage detection circuit, the switching circuit and the voltage detection circuit together are used as a clamping circuit being connected in parallel with the power transistor structure and being connected between the drain structure and the source structure of the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more second transistor structures (M5... Mn) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a resistor structure, arranged on the second semiconductor layer and close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a passivation layer, arranged on the second semiconductor layer.
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more first transistor structures (M1... M₄), and the source structure of the power transistor structure is electrically connected to a source of the one or more first transistor structures (M1... M₄).
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more second transistor structures (M5... Mn), and the source structure of the power transistor structure is electrically connected to a source of the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, wherein the switching circuit is turned on when a voltage across the drain structure and the source structure of the power transistor structure is greater than a threshold, and the voltage detection circuit is used to drive the switching circuit to be turned on when the voltage detection circuit detects that the voltage across the drain structure and the source structure of the power transistor structure is greater than the threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor device with integrated clamping circuit
Materials described outside the worked examples.
III-nitride semiconductor material (first semiconductor layer)
III-nitride semiconductor material (second semiconductor layer)
Measurements and analyses referenced in the patent, with their drawing references.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,027,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Compared with the semiconductor device 100 of
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 4. The semiconductor device 200' of
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
FIG. 10 4;
FIG. 15 6; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: 15 a first semiconductor layer composed of a III-nitride semiconductor material; a second semiconductor layer arranged on the first semiconductor layer and composed of a III-nitride semicon-ductor material; 20 a power transistor structure comprising a gate structure a drain structure and a source structure arranged on the second semiconductor layer; one or more first transistor structures (M1... M₄) arranged on the second semiconductor layer; and one or more second transistor structures (M5... Mn) arranged on the second semiconductor layer in series, wherein one end of the one or more first transistor structures (M1... M₄) and one end of the one or more second transistor structures (M5... Mn) are jointly electrically connected to the drain structure of the power transistor structure, and the other end of the one or more first transistor structures (M1... M₄) and the other end of the one or more second transistor struc-tures (M5... Mn) are jointly electrically connected to the source structure of the power transistor structure; wherein the one or more first transistor structures (M1... M₄) are used as a switching circuit, the one or more second transistor structures (M5... Mn) are used as a voltage detection circuit, the switching circuit and the voltage detection circuit together are used as a clamping circuit being connected in parallel with the power transistor structure and being connected between the drain structure and the source structure of the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more second transistor structures (M5... Mn) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a resistor structure, arranged on the second semiconductor layer and close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a passivation layer, arranged on the second semiconductor layer.
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more first transistor structures (M1... M₄), and the source structure of the power transistor structure is electrically connected to a source of the one or more first transistor structures (M1... M₄).
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more second transistor structures (M5... Mn), and the source structure of the power transistor structure is electrically connected to a source of the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, wherein the switching circuit is turned on when a voltage across the drain structure and the source structure of the power transistor structure is greater than a threshold, and the voltage detection circuit is used to drive the switching circuit to be turned on when the voltage detection circuit detects that the voltage across the drain structure and the source structure of the power transistor structure is greater than the threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor device with integrated clamping circuit
Materials described outside the worked examples.
III-nitride semiconductor material (first semiconductor layer)
III-nitride semiconductor material (second semiconductor layer)
Measurements and analyses referenced in the patent, with their drawing references.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,027,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Compared with the semiconductor device 100 of
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 4. The semiconductor device 200' of
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
FIG. 10 4;
FIG. 15 6; and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: 15 a first semiconductor layer composed of a III-nitride semiconductor material; a second semiconductor layer arranged on the first semiconductor layer and composed of a III-nitride semicon-ductor material; 20 a power transistor structure comprising a gate structure a drain structure and a source structure arranged on the second semiconductor layer; one or more first transistor structures (M1... M₄) arranged on the second semiconductor layer; and one or more second transistor structures (M5... Mn) arranged on the second semiconductor layer in series, wherein one end of the one or more first transistor structures (M1... M₄) and one end of the one or more second transistor structures (M5... Mn) are jointly electrically connected to the drain structure of the power transistor structure, and the other end of the one or more first transistor structures (M1... M₄) and the other end of the one or more second transistor struc-tures (M5... Mn) are jointly electrically connected to the source structure of the power transistor structure; wherein the one or more first transistor structures (M1... M₄) are used as a switching circuit, the one or more second transistor structures (M5... Mn) are used as a voltage detection circuit, the switching circuit and the voltage detection circuit together are used as a clamping circuit being connected in parallel with the power transistor structure and being connected between the drain structure and the source structure of the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more second transistor structures (M5... Mn) is or are arranged close to the power transistor structure.
The semiconductor device according to claim 1, wherein the one or more first transistor structures (M1... M₄) is or are arranged close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a resistor structure, arranged on the second semiconductor layer and close to the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, further comprising: a passivation layer, arranged on the second semiconductor layer.
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more first transistor structures (M1... M₄), and the source structure of the power transistor structure is electrically connected to a source of the one or more first transistor structures (M1... M₄).
The semiconductor device according to claim 1, wherein the drain structure of the power transistor structure is electrically connected to a drain of the one or more second transistor structures (M5... Mn), and the source structure of the power transistor structure is electrically connected to a source of the one or more second transistor structures (M5... Mn).
The semiconductor device according to claim 1, wherein the switching circuit is turned on when a voltage across the drain structure and the source structure of the power transistor structure is greater than a threshold, and the voltage detection circuit is used to drive the switching circuit to be turned on when the voltage detection circuit detects that the voltage across the drain structure and the source structure of the power transistor structure is greater than the threshold. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor device with integrated clamping circuit
Materials described outside the worked examples.
III-nitride semiconductor material (first semiconductor layer)
III-nitride semiconductor material (second semiconductor layer)
Measurements and analyses referenced in the patent, with their drawing references.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
gallium nitride (GaN)
GaN
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
gallium nitride (GaN)
GaN
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
gallium nitride (GaN)
GaN
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
gallium nitride (GaN)
GaN
FIG. 2. As shown in
FIG. 3, and a main difference is that the switching circuit 620 is simplified into a single transistor M4, and a source of the transistor Mn is connected to a …
FIG. 5 further includes the switching circuit and the voltage detection circuit. The switching circuit includes transistors M₁ and 5 M4, and the diodes D₁ and …
FIG. 6. How- ever, those of ordinary skill in the technical art may replace the switching circuit and the voltage detection circuit of the present invention …
FIG. 7 further includes the switching circuit and the voltage detection circuit. The switching circuit includes the transistor M4, and the voltage detection …
FIG. 8 is a circuit block diagram of some embodiments of a clamping circuit according to the present invention. PREFERRED EMBODIMENT OF THE PRESENT 20 …
